This paper details a novel method consisting of employing a pulsed-laser Raman scattering technique to estimate junction temperatures of several LED chips arranged in a straight line on a phosphor-less blue-LED package and a phosphor-resin coated blue-LED package. By using a sheet-shaped irradiation pattern, each of the GaN-E2H Raman spectra from several chips mounted straight on a phosphor-less blue LED package was observed at the same time and the junction temperature of each chip was estimated successfully by means of each Raman shift during operation despite the existence of strong LED emission. In addition, the GaN-E2H Raman signal from the phosphor-resin coated blue-LED was observed for the first time by using 633 nm laser to reduce the negative influence from the phosphor and light diffusing substances in the resin. It is concluded that this technique would be a useful method for a remote and standard system for 2D mapping of the junction temperatures of blue-LED packages.
我々は、高出力レーザーを用いた宇宙プラズマ現象の模擬実験を行う事で、宇宙空間での計測の難しい微視的な物理を明らかにすることを目的として研究を行っている。宇宙空間において超新星残骸(SNR)などで観測される無衝突衝撃波は宇宙線加速や磁場増幅に重要な役割を果たすことが、天体観測から明らかになっている。SNRでの磁場増幅機構の1つとして、非一様な媒質中に無衝突衝撃波が伝搬し、励起されたリヒトマイヤー・メシュコフ不安定性(RMI)による磁場増幅が、理論研究やシミュレーションから示されている。今回は、RMIのモデル実験を行い、プラズマの温度・密度の時間発展の解析を進めた。