Researcher Profile and Settings

Affiliation

• Faculty of Engineering　Applied Chemistry　Inorganic Materials Chemistry

Job Title

• Professor

URL

http://kaken.nii.ac.jp/d/r/10262148.ja.html

J-Global ID

• 201201076448891313

Research Interests

• エピタキシ-   有機半導体   炭素材料   結晶成長   エピタキシャル成長   酸化物   層状物質   光電子分光   

Research Areas

• Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electronic devices and equipment
• Nanotechnology/Materials / Crystal engineering
• Nanotechnology/Materials / Applied materials
• Nanotechnology/Materials / Nano/micro-systems
• Nanotechnology/Materials / Nanobioscience
• Nanotechnology/Materials / Nanomaterials
• Nanotechnology/Materials / Nanostructure physics
• Nanotechnology/Materials / Nanostructure chemistry

Educational Organization

•  Bachelor's degree program　School of Engineering
•  Master's degree program　Graduate School of Chemical Sciences and Engineering
•  Doctoral (PhD) degree program　Graduate School of Chemical Sciences and Engineering

Academic & Professional Experience

• 2010/04 - Today 北海道大学 工学(系)研究科(研究院) 教授
• 2000/04 - 2010/03 The University of Tokyo
• 1998/10 - 2000/03 The University of Tokyo
• 1993/11 - 1998/10 The University of Tokyo

Research Activities

Published Papers

• Pitched π-Stacking Crystal Structure and Two-Dimensional Electronic Structure of Acenaphtho[1,2-k]fluoranthene Analogues with Various Substituents

  Takuma Yuki, Seiya Yokokura, Mingoo Jin, Hiroki Waizumi, Taro Nagahama, Toshihiro Shimada

  Crystal Growth & Design 2024/02/21
• High-pressure phase and pressure-induced phase transition of Ag3YCl6

  Kotaro Maki, Koki Muraoka, Saori Kawaguchi, Taku Tanimoto, Akira Nakayama, Seiya Yokokura, Toshihiro Shimada, Kiyoharu Tadanaga, Akira Miura

  CrystEngComm 2024
• Unidirectional growth of epitaxial tantalum disulfide triangle crystals grown on sapphire by chemical vapour deposition with a separate-flow system

  Takashi Yanase, Miu Ebashi, Kotaro Takamure, Wataru Ise, Hiroki Waizumi, Akira Chikamatsu, Yasushi Hirose, Toshihiro Shimada

  CrystEngComm 2024 [Refereed]
  
• Single Crystal Growth of Cyclopenta-Fused Polycyclic Aromatic Hydrocarbon by the Naphthalene Flux Method: 2D Ambipolar Charge Transport Properties and NIR Absorption

  Hirohiko Tanoguchi, Takuma Yuki, Seiya Yokokura, Takashi Yanase, Mingoo Jin, Hajime Ito, Taro Nagahama, Toshihiro Shimada

  ACS Applied Electronic Materials 2023/11/28
• Intrinsic Magnetic Proximity Effect at the Atomically Sharp Interface of Co _x Fe_3-x O₄/Pt Grown by Molecular Beam Epitaxy

  Shoto Nodo, Ichiro Yamane, Motohiro Suzuki, Jun Okabayashi, Seiya Yokokura, Toshihiro Shimada, Taro Nagahama

  ACS OMEGA 8 (28) 24875 - 24882 2470-1343 2023/07 

  Co (x) Fe3-x O4(CFO)/Pt bilayers prepared by molecularbeam epitaxywere investigated for the anomalous Hall effect and X-ray magneticcircular dichroism (XMCD). We found that the anomalous Hall effectoriginates from a magnetic proximity effect at the CFO/Pt interface.The XMCD signal in the Pt L-edge was obtained onlyfor the sample deposited at 600 & DEG;C, indicating that the magneticproximity effect is sensitive to the interface structure. Transmissionelectron microscopy images of the CFO/Pt interface and XMCD measurementsof Co and Fe L-edges do not provide direct evidencefor interfacial atomic diffusion or alloying. In summary, these resultssuggest that the magnetic proximity effect is robust for transportproperties, such as the anomalous Hall effect, while the induced magneticmoment depends on slight differences in the interfacial structure,such as the presence or absence of interfacial oxygen ions.
• Band Structure Evolution during Reversible Interconversion between Dirac and Standard Fermions in Organic Charge-Transfer Salts

  Ryuhei Oka, Keishi Ohara, Kensuke Konishi, Ichiro Yamane, Toshihiro Shimada, Toshio Naito

  Magnetochemistry 9 (6) 153 - 153 2023/06/09 

  Materials containing Dirac fermions (DFs) have been actively researched because they often alter electrical and magnetic properties in an unprecedented manner. Although many studies have suggested the transformation between standard fermions (SFs) and DFs, the non-availability of appropriate samples has prevented the observation of the transformation process. We observed the interconversion process of DFs and SFs using organic charge-transfer (CT) salts. The samples are unique in that the constituents (the donor D and acceptor A species) are particularly close to each other in energy, leading to the temperature- and D-A-combination-sensitive CT interactions in the solid states. The three-dimensional weak D–A CT interactions in low-symmetry crystals induced the continuous reshaping of flat-bottomed bands into Dirac cones with decreasing temperature; this is a characteristic shape of bands that converts the behavior of SFs into that of DFs. Based on the first-principles band structures supported by the observed electronic properties, round-apex-Dirac-cone-like features appear and disappear with temperature variation. These band-structure snapshots are expected to add further detailed understanding to the related research fields.
• Integrated Computing Accelerates Design and Performance Control of New Maraging Steels

  Shixing Chen, Jingchuan Zhu, Tingyao Liu, Yong Liu, Yudong Fu, Toshihiro Shimada, Guanqi Liu

  Materials 2023/06/08
• Detection of Water Vapor by Chemiluminescence

  島田 敏宏, Honami Nishimoto, Hikaru Hayakawa, Hisashi Ichikawa, Yoshifumi Nakacho

  Chemosensors 2023/05/09
• Inverse Tunnel Magnetoresistance of Magnetic Tunnel Junctions with a NiCo2O4 Electrode

  Yoshinori Hara, Katsunori Yoshino, Asaka Tsujie, Toshihiro Shimada, Taro Nagahama

  AIP Advances 13 (2) in press - 025162 2023/02 [Refereed]
   

  Inverse spinel oxide NiCo₂O₄ (NCO) is known to exhibit ferrimagnetic characteristics and electrical conductivity. First-principles calculations predict NCO to be a half-metal with a negative polarization of −100%. In this study, we fabricated epitaxial NCO/MgO/Fe magnetic tunnel junctions by reactive molecular beam epitaxy and observed an inverse tunnel magnetoresistance (TMR) effect of −19.1% at 14 K, indicating that NCO has negative spin polarization. The TMR ratio monotonically decreased with increasing temperature, which was attributed to the temperature dependence of the NCO surface magnetization due to the thermal excitation of spin waves. In addition, the TMR ratio displayed strong bias voltage dependence, decreasing to less than half of the maximum value at +20 and −30 mV. These findings support the use of NCO in spintronic devices and should lead to further developments in oxide spintronics.
• Enhanced NH₃ Sensing Performance of Mo Cluster-MoS₂ Nanocomposite Thin Films via the Sulfurization of Mo₆ Cluster Iodides Precursor

  Meiqi Zhang, Fabien GRASSET, Yuji Masubuchi, 島田 敏宏, NGUYEN TK NGAN, Noée Dumait, Adèle Renaud, stéphane Cordier, David Berthebaud, Jean-François Halet, Tetsuo UCHIKOSHI

  Nanomaterials 13 (3) 478  2023/01/24 [Refereed]
  
• Nearly three-dimensional Dirac fermions in an organic crystalline material unveiled by electron spin resonance

  Ryuhei Oka, Keishi Ohara, Naoya Tajima, Toshihiro Shimada, Toshio Naito

  Materials Advances 2023 [Refereed]
   

  Original analysis methods of the electron spin resonance revealed that nearly three-dimensional Dirac fermions coexistent with standard fermions in an organic charge-transfer complex with each temperature-dependence and rotation symmetry.
• Molecular dynamics simulation of poly (ether ether ketone) (PEEK) polymer to analyze intermolecular ordering by low wavenumber Raman spectroscopy and x-ray diffraction

  Xiaoran Yang, Seiya Yokokura, Taro Nagahama, Makoto Yamaguchi, Toshihiro Shimada

  Polymers 14 (24) in press - 5406 2022/12 [Refereed][Not invited]
   

  Poly(ether ether ketone) (PEEK) is an important engineering plastic and evaluation of its local crystallinity in composites is critical for producing strong and reliable mechanical parts. Low wavenumber Raman spectroscopy and X-ray diffraction are promising techniques for the analysis of crystal ordering but a detailed understanding of the spectra has not been established. Here, we use molecular dynamics combined with a newly developed approximation to simulate local vibrational features to understand the effect of intermolecular ordering in the Raman spectra. We found that intermolecular ordering does affect the low wavenumber Raman spectra and the X-ray diffraction as observed in the experiment. Raman spectroscopy of intermolecular vibration modes is a promising technique to evaluate the local crystallinity of PEEK and other engineering plastics, and the present technique offers an estimation without requiring heavy computational resources.
• Ultrahigh pressure-induced modification of morphology and performance of MOFs-derived Cu@C electrocatalysts

  Ichiro Yamane, Kota Sato, Teruki Ando, Taijiro Tadokoro, Seiya Yokokura, Taro Nagahama, Yoshiki Kato, Tatsuya Takeguchi, Toshihiro Shimada

  Nanoscale Advances 2022/12 [Refereed][Not invited]
   

  We report the pyrolysis of copper-containing metal-organic frameworks under high pressure and the effect of the applied pressure on the morphology and electrocatalytic performance toward the oxygen-related reactions of the...
• Synthesis of Epitaxial MoS2 / MoO2 Core-Shell Nanowires by Two-Step Chemical Vapor Deposition with Turbulent Flow and Their Physical Properties

  M. Goto, I.Yamane, S. Arasawa, T. Yanase, S. Yokokura, T. Nagahama, Yi-lun Chueh, Yongjun Shin, Yongmin Kim, T. Shimada

  ACS Omega 7 (43) in press - 39369 2470-1343 2022/10 [Refereed]
  
• Interaction between Diamond and Alkali Metals and its Application to Machining of Diamond

  Toshihiro Shimada, Hiroki Takehana, Ichiro Yamane

  IEEJ Transactions on Electronics, Information and Systems 142 (10) 1064 - 1067 0385-4221 2022/10/01 [Refereed]
  
• Growth of Pentacene Crystals by Naphthalene Flux Method

  Xiaoran Yang, Mingzhe Li, Akira Maeno, Takashi Yanase, Seiya Yokokura, Taro Nagahama, Toshihiro Shimada

  ACS Omega 7 (32) 28618 - 28623 2470-1343 2022/08/16 

  We report the crystal growth of pentacene from a solution of naphthalene. The solubility of pentacene in naphthalene was evaluated by optical absorption at elevated temperature. The crystal growth was performed in an H-shaped sealed glass tube or metal vessels sealed with ultrahigh-vacuum compatible flanges placed in heated two-zone aluminum blocks. The obtained crystals had a single-crystal-like appearance and flat surface. They were made of aligned microtwins of the "bulk type" (interlayer spacing 14.5 angstrom) polymorph.
• Free-Standing Nanometer-Thick Covalent Organic Framework Films for Separating CO2 and N-2

  Masaki Kato, Ryo Ota, Takashi Endo, Takashi Yanase, Taro Nagahama, Toshihiro Shimada

  ACS APPLIED NANO MATERIALS 5 (2) 2367 - 2374 2022/02 

  Covalent organic frameworks (COF) have been gathering much attention because the shapes, sizes, and chemical functions of their nanostructured pores can be arbitrarily controlled by designing the organic precursors. We fabricated cm-sized free-standing COF films with the thickness of 50-100 nm by an alternating vacuum deposition polymerization method. Precise adjustment of the stoichiometry by digitally controlled deposition was essential for producing the robust free-standing COF films. High-resolution electron microscopy revealed 3 nm pore structures, which correspond to the atomic structure of the COF. Small angle X-ray diffraction shows the existence of a similar periodicity. The CO2/N-2 gas phase separation properties were evaluated from 10(3)-10(5) Pa, and the parameters for each molecular permeation were determined. Based on the detailed analysis, it was found that the selectivity comes from the greater sorption affinity of CO2 to the COF compared to N-2, which is consistent with the quantum chemical calculation. Since the vapor phase method can be used to coat various shaped templates, our method provides a new option for fabrication of neat COF membranes with various structures and their applications for the separation membrane.
• Interaction between alkali metals and diamond: Etching and charge states of NV centers

  Hiroki Takehana, Ichiro Yamane, Takashi Yanase, Taro Nagahama, Toshihiro Shimada

  Carbon 182 585 - 592 0008-6223 2021/09 

  Single crystal diamond particles were heated with liquid phase alkali metals (Li, Na, K) in an argon atmosphere. It was found that Li reacts with the diamond above 600 °C, Na makes the surface rougher on a nm scale at 800 °C, and K did not change the surface morphology. The etching speed by the reaction with Li is the fastest on the (001) surface. Photoluminescence of the NV- (negatively charged nitrogen-vacancy) center decreased only after the annealing with K. DFT calculations explained the strong chemical interaction between Li and the diamond (001) surfaces, and upward band bending at the interfaces with Na and K. The behavior of the NV- center photoluminescence is consistent with the extent of band bending.
• Single Crystal Growth of π-Conjugated Large Molecules without Solubilizing Alkyl Chains via the Naphthalene Flux Method

  Takashi Yanase, Hirohiko Tanoguchi, Nobuhiko Sakai, Mingoo Jin, Ichiro Yamane, Masaki Kato, Hajime Ito, Taro Nagahama, Toshihiro Shimada

  Crystal Growth & Design 21 (8) 4683 - 4689 1528-7483 2021/07/20 [Refereed]
  
• Intersection of Organic Molecules and Carbon Materials for Sustainable Society

  Toshihiro Shimada, Wei Liu, Ichiro Yamane, Takashi Yanase

  IEEJ Transactions on Electronics, Information and Systems 141 (7) 761 - 766 0385-4221 2021/07/01
• DFT calculation of square MoS2 nanotubes

  Meiqi Zhang, Mengting Weng, Takahiro Tamura, Manami Goto, Ichiro Yamane, Takashi Yanase, Taro Nagahama, Toshihiro Shimada

  PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES 130 1386-9477 2021/06 

  This paper present computational study on molybdenum disulfide (MoS2) nanotubes with square cross sections in order to elucidate the growth mechanism and properties of experimentally synthesized nanotubes. The results show that these square nanotubes have strain energies lower than the traditional cylinder ones in the small-diameter region. They also show a much smaller band gap and higher surface energies compared with the cylindrical ones. Zigzag and armchair chirality shows qualitatively different electronic structures about the localization of the edge states.
• Ultrahigh-Pressure Preparation and Catalytic Activity of MOF-Derived Cu Nanoparticles

  Ichiro Yamane, Kota Sato, Ryoichi Otomo, Takashi Yanase, Akira Miura, Taro Nagahama, Yuichi Kamiya, 島田 敏宏

  Nanomaterials 11 (4) 1040 - 1040 2021/04 

  A metal-organic framework (MOF) consisting of Cu-benzenetricarboxylic acid was processed under ultrahigh pressure (5 GPa) and at temperature of up to 500 degrees C. The products were characterized with TEM, FTIR, and XAFS. The decomposition of the MOF started at 200 degrees C at 5 GPa. This temperature was much lower than that in the vacuum. Single-nanometer Cu nanoparticles were obtained in carbon matrix, which was significantly smaller than the Cu particles prepared at ambient pressure. The catalytic activity for Huisgen cycloaddition was examined, and the sample processed at 5 GPa showed a much improved performance compared with that of the MOF-derived Cu nanoparticles prepared without high pressure.
• Synthesis of Boron Nitride Nanotubes Using Plasma-Assisted CVD Catalyzed by Cu Nanoparticles and Oxygen

  Tatsuya Shiratori, Ichiro Yamane, Shoto Nodo, Ryo Ota, Takashi Yanase, Taro Nagahama, Yasunori Yamamoto, Toshihiro Shimada

  Nanomaterials 11 (3) 651 - 651 2021/03/08 

  We found that oxidized Cu nanoparticles can catalyze the growth of boron nitride nanotubes from borazine via plasma-assisted chemical vapor deposition. The Raman spectra suggest that the formation of thin-walled nanotubes show a radial breathing mode vibration. The presence of oxygen in the plasma environment was necessary for the growth of the nanotubes, and a part of the nanotubes had a core shell structure with a cupper species inside it. In atomic resolution transmission electron microscope (TEM) images, Cu2O was found at the interface between the Cu-core and turbostratic BN-shell. The growth mechanism seemed different from that of carbon nanotube core-shell structures. Therefore, we pointed out the important role of the dynamic morphological change in the Cu2O-Cu system.
• Large Inverse Tunnel Magnetoresistance in Magnetic Tunnel Junctions with an Fe3O4 Electrode

  Shoma Yasui, Syuta Honda, Jun Okabayashi, Takashi Yanase, Toshihiro Shimada, Taro Nagahama

  PHYSICAL REVIEW APPLIED 15 (3) 2331-7019 2021/03 

  Spinel-type magnetite Fe3O4 is predicted to be a half-metal material with negative spin polarization. However, magnetic tunnel junctions (MTJs) using an Fe3O4 electrode exhibit a small tunnel magnetoresistance (TMR) effect, the sign of which has not been established experimentally. The development of Fe3O4 as an excellent TMR material requires a better understanding of the characteristics of the interface and the phase transition of Fe3O4 called the Verwey transition. We fabricate MTJs using epitaxial Fe3O4-based stacks on MgO(001) substrates and find a large inverse TMR ratio of -55.8% at 80 K, which corresponds to 126% by the optimistic definition of the TMR ratio. The temperature dependence of the TMR ratio is significantly affected by the Verwey transition. Moreover, we investigate the dependence of TMR on oxygen partial pressure during Fe3O4 deposition. It is found that the magneto-transport properties of the MTJs show different behaviors depending on the oxygen partial pressure because the Verwey transition is sensitive to the oxygen concentration. Furthermore, the electronic and magnetic properties at the interfacial regions are investigated by x-ray magnetic spectroscopy and first-principles calculation. These findings greatly support the use of Fe3O4 in spintronic devices and should lead to further developments in oxide spintronics.
• Mechanical properties of high-crystalline diamond films grown via laser MPCVD

  Meijun Yang, Sunan Bai, Qingfang Xu, Jun Li, Toshihiro Shimada, Qizhong Li, Takashi Goto, Rong Tu, Song Zhang

  DIAMOND AND RELATED MATERIALS 109 0925-9635 2020/11 

  High-crystalline diamond films were prepared by laser (wavelength: 532 nm) microwave plasma chemical vapor deposition (Laser MPCVD). The effects of laser power density (E) on the microstructure and properties of diamond films were investigated. The laser enhanced the precursor reaction process which reduces the non-diamond components such as graphite and amorphous carbon. At E = 40 W/cm(2), more methyl radicals and atomic hydrogen were generated with coupling of laser and plasma, which promoted crystal growth until the grain size reaches the maximum value of 0.72 mu m. The phase purity of film reached the highest as the full width at half maximum (FWHM) of Raman peak reached the minimum of FWHMmin = 4.2 cm(-1). And hardness (H) and Young's modulus (M) values reached the maximum of H-max = 91 GPa and M-ma(x) = 721 GPa, respectively. The discovery of the advantages of laser in diamond growth is of great significance for improving the synthesis of many technically crucial materials.
• Healing Sulfur Vacancies in Monolayer MoS2 by High-Pressure Sulfur and Selenium Annealing: Implication for High-Performance Transistors

  Takashi Yanase, Fumiya Uehara, Itsuki Naito, Taro Nagahama, Toshihiro Shimada

  ACS APPLIED NANO MATERIALS 3 (10) 10462 - 10469 2574-0970 2020/10 

  Developing a technology to terminate chalcogen vacancies for transition-metal dichalcogenides is a crucial task for applications, such as transistors, diodes, and sensors, because chalcogen vacancies degrade the electronic and optical properties. This article reports a healing method of S vacancies in MoS2 by high-pressure annealing under a S vapor pressure of 5 atm. The crystal quality after mechanical transfer, S annealing, and vacuum annealing was systematically studied by observing the photoluminescence (PL). The remarkable recovery of the A-exciton emission peak in the PL spectrum indicated repair of the crystal quality in MoS2 by the S annealing. We also demonstrated that the S vacancies could be terminated by Se atoms using a high-pressure annealing method. The crystal quality of MoS2(1-x)Se2x alloys was confirmed by transmission electron microscopy and electron diffraction.
• NiCo2O4 films fabricated by reactive molecular beam epitaxy and annealing in various oxygen atmospheres

  Asaka Tsujie, Yoshinori Hara, Takashi Yanase, Toshihiro Shimada, Taro Nagahama

  Applied Physics Letters 116 (23) 232404 - 232404 0003-6951 2020/06/08
• Controlling the magnetic proximity effect and anomalous Hall effect in CoFe2O4/Pt by ionic gating

  Shoto Nodo, Shimpei Ono, Takashi Yanase, Toshihiro Shimada, Taro Nagahama

  Applied Physics Express 13 (6) 063004 - 063004 1882-0778 2020/06/01
• Post-annealed graphite carbon nitride nanoplates obtained by sugar-assisted exfoliation with improved visible-light photocatalytic performance

  Wei Liu, Takashi Yanase, Nobuhiro Iwasa, Shin Mukai, Shinichiro Iwamura, Taro Nagahama, Toshihiro Shimada

  Journal of Colloid and Interface Science 567 369 - 378 2020/05 [Refereed][Not invited]
  
• Sugar-assisted mechanochemical exfoliation of graphitic carbon nitride for enhanced visible-light photocatalytic performance

  Wei Liu, Takashi Yanase, Nobuhiro Iwasa, Hitoshi Koizumi, Shin Mukai, Shinichiro Iwamura, Taro Nagahama, Toshihiro Shimada

  International Journal of Hydrogen Energy 45 (15) 8444 - 8455 0360-3199 2020/03 [Refereed][Not invited]
  
• Characterization of magnetic properties of ultrathin CoFe2O4 films by utilizing magnetic proximity effect

  S. Nodo, T. Yamamoto, T. Yanase, T. Shimada, T. Nagahama

  Solid State Communications 306 113762 - 113762 0038-1098 2020/02 [Refereed][Not invited]
  
• Growth Kinetics and Magnetic Property of Single-Crystal Fe Nanowires Grown via Vapor-Solid Mechanism Using Chemically Synthesized FeO Nanoparticle Catalysts

  Takashi Yanase, Uika Ogihara, Yoshihiro Awashima, Takeshi Yanagida, Kazuki Nagashima, Taro Nagahama, Toshihiro Shimada

  CRYSTAL GROWTH & DESIGN 19 (12) 7257 - 7263 1528-7483 2019/12 [Refereed][Not invited]
   

  Single-crystal Fe nanowires (NWs) were synthesized on SiO2/Si substrates by chemical vapor deposition (CVD) using a two-flow system in the presence of FeO nanoparticles as catalysts. Transmission electron microscopy observations and an electron diffraction analysis revealed that the NW was defect-free alpha-Fe (bcc structure) oriented in the < 100 > direction. A plausible mechanism of the Fe NW growth is suggested based on the observations of the morphology and characteristic diameter of the Fe NW. We found that the NWs became polycrystalline when their diameter was approximately 100 nm. The excellent crystal quality of the single-crystal NW was confirmed by electron diffraction and the residual resistance ratio. Magnetic uniformity and a strong shape-anisotropic behavior of magnetization were observed by measuring the hysteresis loop and the angle dependence of the magneto-optical Kerr effect, respectively.
• CVD Growth and Characterization of MoS₂ Nanotubes Grown with FeO Nanoparticle Catalysts

  柳瀬隆, MENGTING Weng, MEIQI Zhang, 後藤真菜美, 長浜太郎, 島田敏宏

  表面と真空 62 (10) 2433-5835 2019/10 [Refereed][Not invited]
  
• Porous graphitic carbon nitride nanoplates obtained by a combined exfoliation strategy for enhanced visible light photocatalytic activity

  Wei Liu, Nobuhiro Iwasa, Shinichiro Fujita, Hitoshi Koizumi, Makoto Yamaguchi, Toshihiro Shimada

  Applied Surface Science 2019/09 [Refereed][Not invited]
  
• Synthesis of Carbon Nanotubes by Plasma-Enhanced Chemical Vapor Deposition Using Fe1−xMnxO Nanoparticles as Catalysts: How Does the Catalytic Activity of Graphitization Affect the Yields and Morphology?

  Takashi Yanase, Takuya Miura, Tatsuya Shiratori, Mengting Weng, Taro Nagahama, Toshihiro Shimada

  C 5 (3) 46 - 46 2019/08/08 [Refereed][Not invited]
   

  The choice of a catalyst for carbon nanotube (CNT) growth is critical to controlling the morphology and chirality of the final product. Plasma-enhanced chemical vapor deposition (PECVD) can alleviate the requirements of the catalyst, i.e., they must be active for both the decomposition of the source gas and graphitization in the conventional thermal CVD. However, it is still not well understood how the catalytic activity of the graphitization affects the yield and quality of CNTs. In this paper, we systematically investigated the influence of the catalytic activity of graphitization by tuning the composition of Fe1-xMnxO (x = 0-1) nanoparticles as catalysts. As the Mn component increased, the number of CNTs decreased because Mn has no catalytic function of the graphitization. The quality of CNTs also affected by the inclusion of the Mn component. Our study may provide useful information to develop a new catalyst for CNT growth in PECVD.
• Tunnel magnetoresistance effect in a magnetic tunnel junction with a B2-Fe3Sn electrode

  Y. Goto, T. Yanase, T. Shimada, M. Shirai, T. Nagahama

  AIP Advances 9 085322  2019/08 [Refereed][Not invited]
  
• Study on the requirements of catalytic function for the growth of carbon nanotubes by plasma-enhanced chemical vapor deposition

  Takashi Yanase, Takuya Miura, Tatsuya Shiratori, Mengting Weng, Taro Nagahama, Toshihiro Shimada

  C: Journal of Carbon Research 5 (3) 46 - 46 2019/08 [Refereed][Not invited]
  
• Synthesis of carbon-doped boron nitride nanosheets and enhancement of their room-temperature ferromagnetic properties

  Wei Liu, Takashi Yanase, Taro Nagahama, Toshihiro Shimada

  Journal of Alloys and Compounds 792 1206 - 1212 2019/07 [Refereed][Not invited]
  
• さまざまな面指数を持つcBN表面のナノインデンテーション

  田村貴大, Roman Nowak, 高倉洋礼, 島田敏宏

  New Diamond 35 (3) 20 - 21 2019/06 [Refereed][Not invited]
  
• Search for new nitrogen-doped carbon materials by compressing molecular crystals

  Ichiro Yamane, Takashi Yanase, Taro Nagahama, Toshihiro Shimada

  JAPANESE JOURNAL OF APPLIED PHYSICS 58 0021-4922 2019/04 [Refereed][Not invited]
   

  Synthesis under high pressure is a powerful technique to obtain novel materials. We here report ultrahigh pressure experiments to search for new nitrogen-doped carbon materials. Crystalline powders of organic molecules with nitrogen atoms are used as precursors. After high pressure treatment at room temperature, precursor molecules underwent oligomerization accompanied by transformation from sp(2)-hybridization carbon atoms to sp(3) ones. (C) 2019 The Japan Society of Applied Physics
• Single crystal growth, structural analysis and electronic band structure of a nitrogen-containing polyacene BBQPP

  Nobuhiko Sakai, Takahiro Tamura, Takashi Yanase, Taro Nagahama, Toshihiro Shimada

  Japanese Journal of Applied Physics 58 in press  2019/04 [Refereed][Not invited]
  
• Single crystal growth, structural analysis and electronic band structure of a nitrogen-containing polyacene Benzo[i]benzo[6′,7′]quinoxalino[2′,3′:9,10]phenanthro[4,5-abc]phenazine

  Nobuhiko Sakai, Takahiro Tamura, Takashi Yanase, Taro Nagahama, Toshihiro Shimada

  Japanese Journal of Applied Physics 58 ({SB}) 0021-4922 2019/02 [Refereed][Not invited]
  
• Synthesis of metastable B2-type Fe–Sn alloy epitaxial films and study of their magnetic properties

  Yuki Goto, Masato Araki, Nozomi Takahashi, Takashi Yanase, Toshihiro Shimada, Masahito Tsujikawa, Masafumi Shirai, Akira Kamimaki, Satoshi Iihama, Shigemi Mizukami, Taro Nagahama

  Japanese Journal of Applied Physics 57 (12) 120302 - 120302 0021-4922 2018/10 [Refereed][Not invited]
  
• Catalytic chemical vapor deposition and structural analysis of MoS2 nanowires

  Mengting Weng, Meiqi Zhang, Takashi Yanase, Fumiya Uehara, Taro Nagahama, Toshihiro Shimada

  Japanese Journal of Applied Physics 2018/04 [Refereed][Not invited]
  
• Rich interfacial chemistry and properties of carbon-doped hexagonal boron nitride nanosheets revealed by electronic structure calculations

  Wei Xie, Takahiro Tamura, Takashi Yanase, Taro Nagahama, Toshihiro Shimada

  Japanese Journal of Applied Physics 57 (4) 1347-4065 2018/04/01 [Refereed][Not invited]
   

  The effect of C doping to hexagonal boron nitride (h-BN) to its electronic structure is examined by first principles calculations using the association from π-electron systems of organic molecules embedded in a two-dimensional insulator. In a monolayered carbon-doped structure, odd-number doping with carbon atoms confers metallic properties with different work functions. Various electronic interactions occur between two layers with odd-number carbon substitution. A direct sp3 covalent chemical bond is formed when C replaces adjacent B and N in different layers. A charge transfer complex between layers is found when C replaces B and N in the next-neighboring region, which results in narrower band gaps (e.g., 0.37 eV). Direct bonding between C and B atoms is found when two C atoms in different layers are at a certain distance.
• Semitransparent conductive carbon films synthesized by sintering spin-coated sp(3)-based network polymer

  Takashi Yanase, Hiroaki Uwabe, Koki Hasegawa, Taro Nagahama, Makoto Yamaguchi, Toshihiro Shimada

  JAPANESE JOURNAL OF APPLIED PHYSICS 57 (3) 0021-4922 2018/03 [Refereed][Not invited]
   

  We synthesized semitransparent conducting thin films of amorphous carbon from sp(3)-rich network polymer. The films showed a reasonable optical transparency (58-73% transmission in the wavelength range of 380-2200 nm), a low electric resistivity (6.7 x 10(-3) Omega cm), and durability against corrosive chemical reagents. The sintering of the amorphous films results in the formation of a carbon honeycomb lattice in the films. (C) 2018 The Japan Society of Applied Physics
• Synthesis of Mo1-xNbxS2 thin films by separate-flow chemical vapor deposition with chloride sources

  Takashi Yanase, Sho Watanabe, Fumiya Uehara, Mengting Weng, Taro Nagahama, Toshihiro Shimada

  THIN SOLID FILMS 649 171 - 176 0040-6090 2018/03 [Refereed][Not invited]
   

  The doping of element (Nb, Ta, etc.) into MoS2, one of the layered transition metal dichalcogenides, is a key technology for electronic devices because the lack of the p-type MoS2 has limited the range of applications. We report that the Mo1-xNbxS2 thin films were synthesized on SiO2/Si substrates by chemical vapor deposition (CVD). It was critical to use chloride sources ( MoCl5 and NbCl5) for the synthesis of Mo1-xNbxS2. The Nb concentration can be increased to 10% by controlling the supplied amount of Nb using a separate-flow CVD apparatus. The Raman spectra changed as the Nb concentration increased, appearing E-2(Nb-S) vibrational mode. The photoluminescence (PL) at 655 nm, attributed to emission from excitons, disappeared, when Nb was incorporated into the MoS2. PL due to trions at 680 nm was observed for the Mo1-xNbxS2 thin films.
• Morphology and mechanical behavior of diamond films fabricated by IH-MPCVD

  Rong Tu, Tiantian Xu, Dengfeng Li, Song Zhang, Meijun Yang, Qizhong Li, Lianmeng Zhang, Toshihiro Shimada, Takashi Goto, Ji Shi

  RSC Advances 2018
• Fabrication of Epitaxial Fe3O4 Film on a Si(111) Substrate

  Nozomi Takahashi, Teodor Huminiuc, Yuta Yamamoto, Takashi Yanase, Toshihiro Shimada, Atsufumi Hirohata, Taro Nagahama

  Scientific Reports Nature Publishing Group 7 (1) 7009 - 7009 2045-2322 2017/12 [Refereed][Not invited]
   

  The application of magnetic oxides in spintronics has recently attracted much attention. The epitaxial growth of magnetic oxide on Si could be the first step of new functional spintronics devices with semiconductors. However, epitaxial spinel ferrite films are generally grown on oxide substrates, not on semiconductors. To combine oxide spintronics and semiconductor technology, we fabricated Fe3O4 films through epitaxial growth on a Si(111) substrate by inserting a gamma-Al2O3 buffer layer. Both of gamma-Al2O3 and Fe3O4 layer grew epitaxially on Si and the films exhibited the magnetic and electronic properties as same as bulk. Furthermore, we also found the buffer layer dependence of crystal structure of Fe3O4 by X-ray diffraction and high-resolution transmission electron microscope. The Fe3O4 films on an amorphous-Al2O3 buffer layer grown at room temperature grew uniaxially in the (111) orientation and had a textured structure in the plane. When Fe3O4 was deposited on Si(111) directly, the poly-crystal Fe3O4 films were obtained due to SiOx on Si substrate. The epitaxial Fe3O4 layer on Si substrates enable us the integration of highly functional spintoronic devices with Si technology.
• Inverse Tunnel Magnetocapacitance in Fe/Al-oxide/Fe3O4

  Hideo Kaiju, Taro Nagahama, Shun Sasaki, Toshihiro Shimada, Osamu Kitakami, Takahiro Misawa, Masaya Fujioka, Junji Nishii, Gang Xiao

  Scientific Reports 7 (1) 2682  2045-2322 2017/12 [Refereed][Not invited]
   

  Magnetocapacitance (MC) effect, observed in a wide range of materials and devices, such as multiferroic materials and spintronic devices, has received considerable attention due to its interesting physical properties and practical applications. A normal MC effect exhibits a higher capacitance when spins in the electrodes are parallel to each other and a lower capacitance when spins are antiparallel. Here we report an inverse tunnel magnetocapacitance (TMC) effect for the first time in Fe/AlOx/Fe3O4 magnetic tunnel junctions (MTJs). The inverse TMC reaches up to 11.4% at room temperature and the robustness of spin polarization is revealed in the bias dependence of the inverse TMC. Excellent agreement between theory and experiment is achieved for the entire applied frequency range and the wide bipolar bias regions using Debye-Frohlich model (combined with the Zhang formula and parabolic barrier approximation) and spin-dependent drift-diffusion model. Furthermore, our theoretical calculations predict that the inverse TMC effect could potentially reach 150% in MTJs with a positive and negative spin polarization of 65% and -42%, respectively. These theoretical and experimental findings provide a new insight into both static and dynamic spin-dependent transports. They will open up broader opportunities for device applications, such as magnetic logic circuits and multi-valued memory devices.
• Pinpoint-fluorinated polycyclic aromatic hydrocarbons (F-PAHs): Syntheses of difluorinated subfamily and their properties

  Kohei Fuchibe, Kento Shigeno, Nan Zhao, Hiromichi Aihara, Rikuo Akisaka, Toshiyuki Morikawa, Takeshi Fujita, Kie Yamakawa, Toshihiro Shimada, Junji Ichikawa

  JOURNAL OF FLUORINE CHEMISTRY 203 173 - 184 0022-1139 2017/11 [Refereed][Not invited]
   

  Difluorinated polycyclic aromatic hydrocarbons (PAHs) containing three to five benzene rings were systematically synthesized by the Pd(II)-catalyzed Friedel-Crafts-type cyclization of 1,1,2-trifluoro- and 1,1-difluoro-1-alkenes and the In(III)-catalyzed tandem cyclization of bis(1,1-difluoroallene)s. Using an array of the di-fluorinated PAHs that were obtained and previously reported monofluorinated PAHs, the physical properties of the pinpoint-fluorinated PAHs were investigated. (i) The F-19 NMR signals of the bay-region fluorine atoms were shifted downfield by ca. 8-14 ppm for vic-difluorinated PAHs and ca. 11-19 ppm for non-vic-difludrinated and monofluorinated PAHs. (ii) The introduction of fluorine into PAH molecules increased their solubilities in organic solvents, which was best exemplified by the high solubilities of 6,7-difluoropicene (5.4 wt%) and 6-fluoropicene (5.3 wt%) in THF. (iii) The HOMO-LUMO energy gaps of the pinpoint-fluorinated PAHs were smaller than that of the corresponding fluorine-free PAH (i.e., picene) by 0.02-0.26 eV, and the HOMO and LUMO energy levels were lowered by 0.10-0.22 eV and 0.12-0.41 eV, respectively.
• Prediction of Ternary Liquidus Temperatures by Statistical Modeling of Binary and Ternary Ag-Al-Sn-Zn Systems.

  Akira Miura, Tsukasa Hokimoto, Masanori Nagao, Takashi Yanase, Toshihiro Shimada, Kiyoharu Tadanaga

  ACS omega 2 (8) 5271 - 5282 2017/08/31 [Refereed][Not invited]
   

  The relationship of liquidus temperatures among six binary and four ternary phases in a Ag-Al-Sn-Zn system was analyzed by means of statistical modeling. Four statistical models to predict changes in the liquidus temperatures in Ag-Al-Sn-Zn were proposed on the basis of different hypotheses derived from macroscopic and microscopic standpoints. The results of interpolation tests to evaluate the prediction accuracies of the ternary liquidus temperatures suggested that the multivariate regression model based on binary liquidus temperatures, interactive binary liquidus temperatures, and products of atomic ratios was found to be the most effective among the four models. It was numerically shown that the prediction accuracies of the liquidus temperatures in local ternary systems of Ag-Al-Sn-Zn can be improved further by using the models identified in their neighboring systems. Finally, the possibility to extract the general trend and the abnormal combination of elements for the prediction of liquidus temperatures was discussed on the basis of the statistical framework we considered.
• Switching of the products by changing the size and shape of catalytic nanoparticles during CVD growth of MoS2 nanotubes

  Weng Mengting, Takashi Yanase, Fumiya Uehara, Sho Watanabe, Takuya Miura, Taro Nagahama, Toshihiro Shimada

  CRYSTENGCOMM 19 (28) 3915 - 3920 1466-8033 2017/07 [Refereed][Not invited]
   

  Nanowires of layered materials are important because they exhibit the highest sensitivity as electricallydetecting chemical sensors. MoS2 nanowires have been synthesized by a catalytic chemical vapor deposition method on silicon substrates drop-coated with FeO nanoparticles of different shapes. Switching of the products (MoS2 nanowires to SiO2 nanowires) has been observed when the shapes and sizes of the FeO nanoparticles changed. MoS2 nanowires were grown in the presence of six-horned octahedral nanoparticles, whereas SiO2 nanowires were formed in the presence of spherical nanoparticles. Their morphology, crystal structure and elemental composition have been fully investigated to elucidate the growth mechanism of the nanowires. The kinetics of the grown SiO2 and MoS2 nanowires are competing, giving rise to the observed switching.
• N-2 plasma etching processes of microscopic single crystals of cubic boron nitride

  Takahiro Tamura, Takuya Takami, Takashi Yanase, Taro Nagahama, Toshihiro Shimada

  JAPANESE JOURNAL OF APPLIED PHYSICS 56 (6) 0021-4922 2017/06 [Refereed][Not invited]
   

  We studied the N-2 plasma etching of cubic boron nitride (cBN). We have developed experimental techniques for handling 200-mu m-size single crystals for the preparation of surfaces with arbitrary crystal indexes, plasma processes, and surface analyses. We successfully prepared smooth surfaces of cBN with roughness smaller than 10 nm and found that the etching behavior was strongly influenced by the surface indexes. The morphology of the etched surfaces can be explained by the chemical stability of (111)B surfaces. (C) 2017 The Japan Society of Applied Physics
• The magnetic properties of Fe3O4/nonmagnetic metal/Fe hybrid systems

  K. Omori, T. Kawai, N. Takahashi, T. Yanase, T. Shimada, T. Nagahama

  Applied Physics Letters 110 (21) 212402 - 212402 0003-6951 2017/05/22 [Refereed][Not invited]
   

  Fe3O4 possesses unique properties such as high Curie temperature and half-metallic nature and therefore can function as a high-spin-polarized electrode in spintronic devices. In order to use this compound in such devices, the magnetic characteristics of multilayers used in these devices, which include Fe3O4, should be highly controllable. In this study, we fabricated Fe3O4/Pt or Cr (0-10 nm)/Fe systems through epitaxial growth on MgO(110) substrates in order to investigate the magnetic coupling in Fe3O4 and metallic hybrid systems. We found that these two systems show a marked difference in the dependence of the coercive field (H-c) of the Fe layer on the nonmagneticmetal- layer thickness. Hc for the system with Pt showed variation characteristics of interlayer exchange coupling in metal systems, while H-c increased monotonically with the thickness of the Cr layer. Published by AIP Publishing.
• A thermocouple-based remote temperature controller of an electrically-floated sample for plasma CVD of nanocarbons with bias voltage

  Toshihiro Shimada, Takuya Miura, Wei Xie, Takashi Yanase, Taro Nagahama

  MEASUREMENT 102 244 - 248 0263-2241 2017/05 [Refereed][Not invited]
   

  We report an accurate and easy-to operate instrument for the temperature control of an electrically floated sample using a thermocouple in direct contact with it. The signal was transmitted via 2.45 GHz WiFi. We measured and analyzed the discrepancy between the thermocouple and a radiation thermometer for the plasma CVD of carbon nanomaterials under sample bias. A successful protection method from abnormal discharge in the plasma is also provided. (C) 2017 Elsevier Ltd. All rights reserved.
• Inverse Tunnel Magnetocapacitance in Fe/Al-oxide/Fe3O4

  Hideo Kaiju, Taro Nagahama, Shun Sasaki, Toshihiro Shimada, Osamu Kitakami, Takahiro Misawa, Masaya Fujioka, Junji Nishii, Gang Xiao

  Scientific Reports 7 2682 - 2682 2017/03 [Refereed][Not invited]
  
• N2 plasma etching processes of microscopic single crystals of cubic boron nitride

  Takahiro Tamura, Takuya Takami, Takashi Yanase, Taro Nagahama, Toshihiro Shimada

  Jpn. J. Appl. Phys. 56 06HF01  2017/03 [Refereed][Not invited]
  
• Adhesives for Vacuum Sealing and Sample Fixation in Surface Science Experiments

  Toshihiro Shimada

  表面科学 38 2017/02 [Refereed][Invited]
  
• Switching of the products by changing the size and shape of catalytic nanoparticles during CVD growth of MoS2 nanotubes

  Weng Mengting, Takashi Yanase, Fumiya Uehara, Sho Watanabe, Takuya Miura, Taro Nagahama, Toshihiro Shimada

  CrystEngComm 19 (28) 3915 - 3920 1466-8033 2017 [Refereed][Not invited]
   

  Nanowires of layered materials are important because they exhibit the highest sensitivity as electricallydetecting chemical sensors. MoS2 nanowires have been synthesized by a catalytic chemical vapor deposition method on silicon substrates drop-coated with FeO nanoparticles of different shapes. Switching of the products (MoS2 nanowires to SiO2 nanowires) has been observed when the shapes and sizes of the FeO nanoparticles changed. MoS2 nanowires were grown in the presence of six-horned octahedral nanoparticles, whereas SiO2 nanowires were formed in the presence of spherical nanoparticles. Their morphology, crystal structure and elemental composition have been fully investigated to elucidate the growth mechanism of the nanowires. The kinetics of the grown SiO2 and MoS2 nanowires are competing, giving rise to the observed switching.
• Accurate and stable equal-pressure measurements of water vapor transmission rate reaching the 10(-6) g m(-2) day(-1) range

  Yoichiro Nakano, Takashi Yanase, Taro Nagahama, Hajime Yoshida, Toshihiro Shimada

  SCIENTIFIC REPORTS 6 35408  2045-2322 2016/10 [Refereed][Not invited]
   

  The water vapor transmission rate (WVTR) of a gas barrier coating is a critically important parameter for flexible organic device packaging, but its accurate measurement without mechanical stress to ultrathin films has been a significant challenge in instrumental analysis. At the current stage, no reliable results have been reported in the range of 10(-6) g m(-2) day(-1) that is required for organic light emitting diodes (OLEDs). In this article, we describe a solution for this difficult, but important measurement, involving enhanced sensitivity by a cold trap, stabilized temperature system, pumped sealing and calibration by a standard conductance element.
• Formation of bismuth-core-carbon-shell nanoparticles by bismuth immersion during plasma CVD synthesis of thin diamond films

  Takahiro Tamura, Takuya Takami, Sachio Kobayashi, Taro Nagahama, Takashi Yanase, Toshihiro Shimada

  Diamond and Related Materials 69 127 - 132 0925-9635 2016/10 [Refereed][Not invited]
   

  This paper describes an attempt to synthesize bismuth-doped diamond by plasma CVD. Solid bismuth was inserted into the reaction plasma of CH4 and H-2. Examination by TEM showed that most of the bismuth was included as Bi nanoparticles in the carbon nanospheres, which segregated at the grain boundary of the diamond polycrystals. Diffraction peaks corresponding to the carbon allotrope Chaoite were observed at the grain boundaries. The Raman spectra showed very complex features between 100-1600 cm(-1), suggesting the existance of molecule-like species. (C) 2016 Elsevier B.V. All rights reserved.
• Chemical Vapor Deposition of NbS2 from a Chloride Source with H-2 Flow: Orientation Control of Ultrathin Crystals Directly Grown on SiO2/Si Substrate and Charge Density Wave Transition

  Takashi Yanase, Sho Watanabe, Mengting Weng, Makoto Wakeshima, Yukio Hinatsu, Taro Nagahama, Toshihiro Shimada

  CRYSTAL GROWTH & DESIGN 16 (8) 4467 - 4472 1528-7483 2016/08 [Refereed][Not invited]
   

  This article reports the growth and characterization of z-axis-oriented NbS2 thin films on SiO2/Si substrate by ambient pressure chemical vapor deposition (CVD) using a generic metal chloride source. We found that NbS2 nanosheets can be grown directly on the SiO2/Si substrate with the aid of hydrogen gas mixed in the carrier gas. Detailed examination Of the growth parameters was made possible using a separate-flow CVD apparatus. It appears that the major cause of the misorientation is the off-stoichiometry with surplus Nb. The quality of the films was evaluated by X-ray diffraction and Raman spectroscopy as well as resistivity measurements at low temperatures. They showed a resistivity minimum at the same temperature of the charge density wave (CDW) transition for a bulk single crystal of 3R-NbS2.
• Chemical Vapor Deposition of MoS2: Insight Into the Growth Mechanism by Separated Gas Flow Experiments

  Takashi Yanase, Sho Watanabe, Mengting Weng, Taro Nagahama, Toshihiro Shimada

  JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 16 (4) 3223 - 3227 1533-4880 2016/04 [Refereed][Not invited]
   

  We report detailed experiments on chemical vapor deposition of an atomic layer semiconductor MoS2. We developed a new type of CVD system in which MoO3 and S sources are separately supplied to the substrates. It has become possible to precisely control the supply of the materials separately in the order of seconds. Raman and XPS analysis of the films grown under various conditions revealed that the initially obtained films are S-deficient and complete stoichiometry is reached after several minutes under S vapor flow.
• Carbon-Doped Hexagonal Boron Nitride: Analysis as π-Conjugate Molecules Embedded in Two Dimensional Insulator

  Wei Xie, Takashi Yanase, Taro Nagahama, Toshihiro Shimada

  C MDPI 2 (1) 2 - 2 2311-5629 2016/01/29 [Refereed][Not invited]
   

  We analyzed the electronic structures of carbon-doped hexagonal boron nitride, focusing on the comparison with the corresponding π-conjugate hydrocarbon molecules and odd-number substitution by first principle calculation. The band gaps are about the half that of the HOMO-LUMO gaps of corresponding hydrocarbons, except for the cis-butadiene structure in which aromatic hexagonal ring formation is important. Odd number doping makes metallic materials with very different work functions, depending upon the difference in B and N numbers, and has an expected application as electrodes for flexible devices.
• Investigation of epitaxial growth and tunnel magnetoresistance effects in magnetic tunnel junctions including spinel ferrite layers

  Nozomi Takahashi, Tomohiro Kawai, Takashi Yanase, Toshihiro Shimada, Taro Nagahama

  JAPANESE JOURNAL OF APPLIED PHYSICS 54 (11) 118003  0021-4922 2015/11 [Refereed][Not invited]
   

  The combination of magnetic tunnel junctions (MTJs) and magnetic insulating (MI) layers has attracted much attention because of its potential as novel spintronic devices. To realize such devices, the epitaxial growth and magnetoresistance of MTJs with spinel ferrite were investigated. Nonmagnetic (NM) layers were inserted between the MTJs and MI layers as magnetic decoupling layers, the epitaxial growth of which was important to obtain high-quality epitaxial multilayers. Multilayers of MTJ/NM/MI and MI/NM/MTJ were fabricated and tunnel magnetoresistance (TMR) values of 70 and 50% at room temperature, respectively, were observed. The shape of the magnetoresistance curve depended on the sample structure. (C) 2015 The Japan Society of Applied Physics
• Colorful Carbon Nanopopcorns Formed by Codepositing C-60 with Diamond-like Carbon Followed by Reaction with Water Vapor

  Wei Xie, Aiko Kawahito, Takuya Miura, Takashi Endo, Yongming Wang, Takashi Yanase, Taro Nagahama, Yukitoshi Otani, Toshihiro Shimada

  CHEMISTRY LETTERS 44 (9) 1205 - 1207 0366-7022 2015/09 [Refereed][Not invited]
   

  We report the synthesis of a new carbon material diamondlike carbon film codeposited with 1% C-60 molecules by plasma-assisted chemical vapor deposition. The synthesized films exhibited strong iridescent colors after being exposed to an atmosphere containing water vapor. An electron microscopy examination revealed that the film expanded by a factor of more than two, while forming 10-100-nm-sized grain-like structures after its exposure to water vapor. This work demonstrates a new concept of incorporating reaction centers in carbon solids to make carbon-based nanostructures.
• Fabrication of Fe nanowires on yittrium stabilized zirconia single crystal substrates by thermal CVD methods

  A. Kawahito, T. Endo, T. Yanase, T. Nagahama, T. Shimada

  J. Appl. Phys. in press (17) 17D506 - 17D506 0021-8979 2015/05/07 [Not refereed][Not invited]
  
• Electrostatic model of a solid state capacitor with ionizable charge traps for flexible device applications

  Toshihiro Shimada, Takashi Yanase, Taro Nagahama

  IEEJ Transactions on Electronics, Information and Systems 135 (2) 164 - 167 1348-8155 2015/02/01 [Not refereed][Not invited]
   

  Charge storage devices in the film-base flexible electronics are very important for the application of those devices in daily life. In order to examine the recently reported solid state capacitor with ionizable charge traps, we present an analysis of an electrostatic model. It shows a charge-voltage characteristic resembling a chemical battery. While the energy density per charge is great in these devices, the energy density of the capacitor with ionizable traps will be lower than that of an ordinary capacitor with metal electrodes, assuming the same withstanding voltage and the same geometry.
• Multilayered MoS2 nanoflakes bound to carbon nanotubes as electron acceptors in bulk heterojunction inverted organic solar cells

  Jeon, Il, Kutsuzawa, Dai, Hashimoto, Yu, Yanase, Takashi, Nagahama, Taro, Shimada, Toshihiro, Matsuo, Yutaka

  Organic Electronics 17 275 - 280 1566-1199 2015 [Refereed][Not invited]
   

  We demonstrate the deposition of multilayered MoS2 on a low-cost metallic-semiconducting carbon nanotube via chemical vapor deposition, and the use of this material as electron acceptor species forming a bulk heterojunction with P3HT in inverted-type organic photovoltaics (OPVs). This is an uplifting discovery, in which MoS2 has been used as an electron acceptor in spite of its innate immiscibility with organic compounds. This is possible because we utilize carbon nanotube's nature to intercalate with P3HT through pi-pi interaction. The successful binding of MoS2 onto carbon nanotube bundles and its optoelectronic effect as a photovoltaic device has been lucidly analyzed through various techniques in this paper. The effect has been ultimately evidenced by a power conversion efficiency of 0.46%, which proves MoS2 with many advantages can also be used as a photoactive layer. (C) 2014 Elsevier B.V. All rights reserved.
• Electrostatic Model of a Solid State Capacitor with Ionizable Charge Traps for Flexible Device Applications

  Shimada, Toshihiro, Yanase, Takashi, Nagahama, Taro

  IEEJ Transactions on Electronics, Information and Systems 135 (2) 164 - 167 1348-8155 2015 [Refereed][Not invited]
   

  Charge storage devices in the film-base flexible electronics are very important for the application of those devices in daily life. In order to examine the recently reported solid state capacitor with ionizable charge traps, we present an analysis of an electrostatic model. It shows a charge-voltage characteristic resembling a chemical battery. While the energy density per charge is great in these devices, the energy density of the capacitor with ionizable traps will be lower than that of an ordinary capacitor with metal electrodes, assuming the same withstanding voltage and the same geometry.
• Spontaneous Mixing of Molecules at the Organic Semiconductor pn Junction Fabricated by Sequential Deposition

  Shimada, Toshihiro, Yanase, Takashi, Nagahama, Taro, Tsuchida, Yuya, Muraya, Naoki

  IEEJ Transactions on Electronics, Information and Systems 135 (2) 160 - 163 1348-8155 2015 [Refereed][Not invited]
   

  Frontier Chemistry Center, Hokkaido University Kita 13, Nishi 8, Kita-ku, Sapporo 060-8628, Japan Graduate School of Chemical Sciences and Engineering, Hokkaido University Kita 13, Nishi 8, Kita-ku, Sapporo 060-8628, Japan Flexible solar cells made of organic semiconductors are promising for the application to the photovoltaic energy sources for flexible devices and those can be attached to any curved surfaces. Mixing and phase separation of different molecules are important for the formation of bulk-hetero junctions. We found that DNTT (dinaphtotienothiophene) and C60 spontaneously mixes when they are sequentially deposited. The driving force does not seem to be the charge transfer between p-type and n-type molecules but the maximization of van der Waals attraction coming from the molecular shapes.
• Fabrication of Fe nanowires on yittrium-stabilized zirconia single crystal substrates by thermal CVD methods

  Kawahito, A, Yanase, T, Endo, T, Nagahama, T, Shimada, T

  Journal of Applied Physics 117 (17) 17D506/1 - 17D506/4 0021-8979 2015 [Refereed][Not invited]
   

  Magnetic nanowires (NWs) are promising as material for use in spintronics and as the precursor of permanent magnets because they have unique properties due to their high aspect ratio. The growth of magnetic Fe whiskers was reported in the 1960s, but the diameter was not on a nanoscale level and the growth mechanism was not fully elucidated. In the present paper, we report the almost vertical growth of Fe NWs on a single crystal yttrium-stabilized zirconia (Y0.15Zr0.85O2) by a thermal CVD method. The NWs show a characteristic taper part on the bottom growing from a trigonal pyramidal nucleus. The taper angle and length can be controlled by changing the growth condition in two steps, which will lead to obtaining uniformly distributed thin Fe NWs for applications. (C) 2015 AIP Publishing LLC.
• Spontaneous Mixing of Molecules at the Organic Semiconductor pn Junction Fabricated by Sequential Deposition

  Shimada, Toshihiro, Yanase, Takashi, Nagahama, Taro, Tsuchida, Yuya, Muraya, Naoki

  IEEJ Transactions on Electronics, Information and Systems 135 (2) 160 - 163 1348-8155 2015 [Not refereed][Not invited]
   

  Frontier Chemistry Center, Hokkaido University Kita 13, Nishi 8, Kita-ku, Sapporo 060-8628, Japan Graduate School of Chemical Sciences and Engineering, Hokkaido University Kita 13, Nishi 8, Kita-ku, Sapporo 060-8628, Japan Flexible solar cells made of organic semiconductors are promising for the application to the photovoltaic energy sources for flexible devices and those can be attached to any curved surfaces. Mixing and phase separation of different molecules are important for the formation of bulk-hetero junctions. We found that DNTT (dinaphtotienothiophene) and C60 spontaneously mixes when they are sequentially deposited. The driving force does not seem to be the charge transfer between p-type and n-type molecules but the maximization of van der Waals attraction coming from the molecular shapes.
• Versatile Simple Doping Technique for Diamond by Solid Dopant Source Immersion during Microwave Plasma CVD

  Takahiro Tamura, Takashi Yanase, Taro Nagahama, Makoto Wakeshima, Yukio Hinatsu, Toshihiro Shimada

  CHEMISTRY LETTERS 43 (10) 1569 - 1571 0366-7022 2014/10 [Not refereed][Not invited]
   

  We demonstrate a new doping technique for chemical vapor deposition (CVD) growth of diamond. The method involves immersing a solid-state dopant source into the plasma during microwave plasma-assisted CVD. We applied this simple and versatile technique to the growth of boron-doped diamond. The grown films were characterized by X-ray diffraction (XRD), Raman microscopy, glow discharge optical emission spectroscopy (GDOES), and electrical conductivity measurements. The average concentration of boron was 0.5 atom % and the conductivity was 1.5 x 10(-2) Omega cm, which showed irregular behavior at low temperature.
• Magnetic properties of epitaxial Fe3O4 films with various crystal orientations and tunnel magnetoresistance effect at room temperature

  Taro Nagahama, Yuya Matsuda, Kazuya Tate, Tomohiro Kawai, Nozomi Takahashi, Shungo Hiratani, Yusuke Watanabe, Takashi Yanase, Toshihiro Shimada

  APPLIED PHYSICS LETTERS 105 (10) 102410  0003-6951 2014/09 [Not refereed][Not invited]
   

  Fe3O4 is a ferrimagnetic spinel ferrite that exhibits electric conductivity at room temperature (RT). Although the material has been predicted to be a half metal according to ab-initio calculations, magnetic tunnel junctions (MTJs) with Fe3O4 electrodes have demonstrated a small tunnel magnetoresistance (TMR) effect. Not even the sign of the tunnel magnetoresistance ratio has been experimentally established. Here, we report on the magnetic properties of epitaxial Fe3O4 films with various crystal orientations. The films exhibited apparent crystal orientation dependence on hysteresis curves. In particular, Fe3O4(110) films exhibited in-plane uniaxial magnetic anisotropy. With respect to the squareness of hysteresis, Fe3O4 (111) demonstrated the largest squareness. Furthermore, we fabricated MTJs with Fe3O4(110) electrodes and obtained a TMR effect of -12% at RT. The negative TMR ratio corresponded to the negative spin polarization of Fe3O4 predicted from band calculations. (C) 2014 AIP Publishing LLC.
• Electrostatic model of solid-state capacitor with ionizable charge traps

  Toshihiro Shimada, Taro Nagahama, Takashi Yanase

  JAPANESE JOURNAL OF APPLIED PHYSICS 53 (8) 88004  0021-4922 2014/08 [Not refereed][Not invited]
   

  We present the analysis of a simple electrostatic model of a solid-state capacitor with ionizable charge traps. It shows a charge voltage characteristic resembling a chemical battery. With a given withstanding voltage and the same geometry, the energy density of the capacitor with ionizable traps will be lower than that of an ordinary capacitor with metal electrodes. (C) 2014 The Japan Society of Applied Physics
• Formation of graphite zigzag edges by cathodic electrochemical etching in acidic solution

  Toshihiro Shimada, Shosei Kubota, Takashi Yanase, Taro Nagahama

  CARBON 67 300 - 303 0008-6223 2014/02 [Not refereed][Not invited]
   

  We examined the edge structure of graphite formed by a cathodic electrochemical reaction in acid solutions associated with water electrolysis. Pole figures of the X-ray diffraction show that the edge orientation is parallel to the zigzag edge direction on a macroscopic scale. The polarization dependence of the G-band and D-band of the Raman spectra is consistent with the zigzag edge formation on a microscopic scale. It was found that the etched carbon atoms are converted to CH4 in the evolving gas and molecular species in the solution. (C) 2013 Elsevier Ltd. All rights reserved.
• Diamond-like Carbon doped with highly pi-conjugated molecules by plasma-assisted CVD

  Wei Xie, Naoki Muraya, Takashi Yanase, Taro Nagahama, Toshihiro Shimada

  JAPANESE JOURNAL OF APPLIED PHYSICS 53 (1) 10203  0021-4922 2014/01 [Refereed][Not invited]
   

  We demonstrate the synthesis of diamond-like carbon (DLC) doped with highly pi-conjugated molecules by codepositing organic semiconductor molecules during the plasma-assisted chemical vapor deposition of DLC. From the results of optical absorption spectroscopy, it was revealed that organic semiconductor molecules reacted with plasma but were not completely decomposed. The results of Raman spectroscopy strongly suggested that a certain chemical moiety remained in the film. (C) 2014 The Japan Society of Applied Physics
• Fe whisker growth revisited: effect of Au catalysis for [02(1) over bar] oriented nanowires with 100 nm diameter

  T. Yanase, A. Kawahito, Y. Hashimoto, T. Endo, Y. Wang, T. Nagahama, T. Shimada

  RSC ADVANCES 4 (52) 27620 - 27624 2046-2069 2014 [Not refereed][Not invited]
   

  We re-examined the growth of single crystalline Fe whiskers by chemical vapour deposition with regard to modern nanowire (NW) growth techniques. Single Fe NWs (100-300 nm diameter) with a high aspect ratio and unique [021] orientation were grown by optimizing the flow of raw materials (FeCl2 and H-2) and using a Au nanoparticle catalyst and single crystalline substrate. The growth mechanism was investigated by transmission electron microscopy and electron diffraction analysis of the NW-catalyst interface.
• Fabrication and characterization of photo-responsive organic p-type/n-type/piezoelectric tricolor superlattices

  Takashi Yanase, Taro Nagahama, Toshihiro Shimada

  APPLIED PHYSICS LETTERS 103 (13) 133305  0003-6951 2013/09 [Not refereed][Not invited]
   

  In order to combine the photovoltaic and piezoelectric activities in a single film, we fabricated tricolor superlattices consisting of an organic p-n junction and a piezoelectric polymer with sub-nm thickness control. The photovoltaic response of each repeating unit was saturated at 10 nm each as a function of the layer thicknesses. The capacitance across the 50 periods of superlattice changed by 0.009 pF upon photo-irradiation, which corresponds to a 2 nm thickness change of a 1-mu m thick film. The characteristic time dependent behaviors of the capacitance of the superlattice consist of photocarrier generation, electrostriction, and poling of the piezoelectric polymer. (C) 2013 AIP Publishing LLC.
• In-Plane Orientation Control of 2,7-Diphenyl[1]benzothieno[3,2-b][1]benzothiophene Monolayer on Bismuth-Terminated Si(111) Vicinal Surfaces with Wettability Optimization

  Manabu Ohtomo, Yuya Tsuchida, Naoki Muraya, Takashi Yanase, Seiji Sakai, Tetsu Yonezawa, Taro Nagahama, Tetsuya Hasegawa, Toshihiro Shimada

  JOURNAL OF PHYSICAL CHEMISTRY C 117 (22) 11555 - 11561 1932-7447 2013/06 [Refereed][Not invited]
   

  We report the in-plane orientation control of a high-mobility organic semiconductor: 2,7-diphenyl[1]benzothieno[3,2-b][1]benzothiophene (DPh-BTBT). As previously reported for the monolayer pentacene, it was revealed that bunched steps on the vicinal Si(111) with a bismuth termination break the surface 3-fold symmetry and reduce the multiple orientation of the DPh-BTBT grains into a quasi-single orientation. Interestingly, the critical step height necessary for the orientation control was higher than that of pentacene. We examined several mechanisms of orientation control and concluded that the facet nanostructure fabricated by step bunching works as an anisotropic template for the nucleation. We also show the wettability optimization of the bismuth-terminated silicon surface and show that the growth mode of DPh-BTBT is dependent on the surface nanostructure of Bi-Si.
• In-Plane Orientation Control of 2,7-Diphenyl[1]benzothieno[3,2-b][1]benzothiophene Monolayer on Bismuth-Terminated Si(111) Vicinal Surfaces with Wettability Optimization

  Manabu Ohtomo, Yuya Tsuchida, Naoki Muraya, Takashi Yanase, Seiji Sakai, Tetsu Yonezawa, Taro Nagahama, Tetsuya Hasegawa, Toshihiro Shimada

  JOURNAL OF PHYSICAL CHEMISTRY C 117 (22) 11555 - 11561 1932-7447 2013/06 [Refereed][Not invited]
   

  We report the in-plane orientation control of a high-mobility organic semiconductor: 2,7-diphenyl[1]benzothieno[3,2-b][1]benzothiophene (DPh-BTBT). As previously reported for the monolayer pentacene, it was revealed that bunched steps on the vicinal Si(111) with a bismuth termination break the surface 3-fold symmetry and reduce the multiple orientation of the DPh-BTBT grains into a quasi-single orientation. Interestingly, the critical step height necessary for the orientation control was higher than that of pentacene. We examined several mechanisms of orientation control and concluded that the facet nanostructure fabricated by step bunching works as an anisotropic template for the nucleation. We also show the wettability optimization of the bismuth-terminated silicon surface and show that the growth mode of DPh-BTBT is dependent on the surface nanostructure of Bi-Si.
• Estimation of Gas Permeation Characteristics of Ultrahigh Barrier Edge Sealing Materials from Asymptotic Solution of Diffusion Equation

  Toshihiro Shimada, Takashi Yanase, Taro Nagahama, Toshiyuki Kanno

  JAPANESE JOURNAL OF APPLIED PHYSICS 52 (5) 0021-4922 2013/05 [Refereed][Not invited]
   

  Materials and structures for water vapor barrier sealing are now actively studied, as the commercialization of organic electronic devices has become a reality. In this paper, we focus on the edge sealing barriers, in which diffusion plays an essential role. In the past, the diffusion-limited gas barrier properties were analyzed in the steady-state approximation, which is never reached within the device lifetime in the application for organic electronics. We analyze them using a simple analytical model. The diffusion before reaching the steady state is a strongly non-linear process, as is well known, and the length scale of approximately 1-10mm is very important when a practical polymer resin is used for the edge seal. (C) 2013 The Japan Society of Applied Physics
• X-ray absorption and magnetic circular dichroism characterization of Fe-doped TiO2-delta thin films

  Sakai, E, Amemiya, K, Chikamatsu, A, Hirose, Y, Shimada, T, Hasegawa, T

  Journal of Magnetism and Magnetic Materials 333 130 - 133 0304-8853 2013/05 [Refereed][Not invited]
  
• Estimation of Gas Permeation Characteristics of Ultrahigh Barrier Edge Sealing Materials from Asymptotic Solution of Diffusion Equation

  Toshihiro Shimada, Takashi Yanase, Taro Nagahama, Toshiyuki Kanno

  JAPANESE JOURNAL OF APPLIED PHYSICS 52 (5) 05DA12  0021-4922 2013/05 [Not refereed][Not invited]
   

  Materials and structures for water vapor barrier sealing are now actively studied, as the commercialization of organic electronic devices has become a reality. In this paper, we focus on the edge sealing barriers, in which diffusion plays an essential role. In the past, the diffusion-limited gas barrier properties were analyzed in the steady-state approximation, which is never reached within the device lifetime in the application for organic electronics. We analyze them using a simple analytical model. The diffusion before reaching the steady state is a strongly non-linear process, as is well known, and the length scale of approximately 1-10mm is very important when a practical polymer resin is used for the edge seal. (C) 2013 The Japan Society of Applied Physics
• Cobalt epitaxial nanoparticles on CaF2/Si(111): Growth process, morphology, crystal structure, and magnetic properties

  N. S. Sokolov, S. M. Suturin, B. B. Krichevtsov, V. G. Dubrovskii, S. V. Gastev, N. V. Sibirev, D. A. Baranov, V. V. Fedorov, A. A. Sitnikova, A. V. Nashchekin, V. I. Sakharov, I. T. Serenkov, T. Shimada, T. Yanase, M. Tabuchi

  Physical Review B - Condensed Matter and Materials Physics 87 (12) 1098-0121 2013/03/07 [Refereed][Not invited]
   

  We study molecular beam epitaxy growth, morphology, crystal structure, and magnetic properties of Co nanoislands on CaF2/Si(111) surface. In order to have a full appreciation of complex growth kinetics at different stages, a comprehensive study of Co growth on CaF2 is carried out by atomic force, scanning electron, and transmission electron microscopies in the direct space, as well as by x-ray and electron diffraction in the reciprocal space. These experimental data are complemented by theoretical modeling. Magnetic properties are characterized by magneto-optical Kerr effect and superconducting quantum interference device magnetometries. Key effects influencing the Co growth on fluorite are addressed, including the sticking probability, the preferential nucleation sites, the size and shape time evolution, the dependence of Co morphology on temperature and Co exposure, and the coalescence mechanism. The two-stage deposition technique is developed, whereby the low-temperature seeding stage is used to facilitate Co nucleation, and the follow-up high-temperature deposition yields Co particles with high crystalline quality. Our results enable precise control over the resulting morphology, spatial ordering, and crystal structure affecting the magnetic properties. In particular, it is demonstrated that the transformation from dense to isolated Co nanoparticles leads to the change of the in-plane and out-of-plane magnetic anisotropy and also the sign of polar and longitudinal magneto-optical Kerr effects. © 2013 American Physical Society.
• Cobalt epitaxial nanoparticles on CaF2/Si(111): Growth process, morphology, crystal structure, and magnetic properties

  N. S. Sokolov, S. M. Suturin, B. B. Krichevtsov, V. G. Dubrovskii, S. V. Gastev, N. V. Sibirev, D. A. Baranov, V. V. Fedorov, A. A. Sitnikova, V. Nashchekin, V. I. Sakharov, I. T. Serenkov, T. Shimada, T. Yanase, M. Tabuchi

  PHYSICAL REVIEW B 87 (12) 125407  2469-9950 2013/03 [Not refereed][Not invited]
   

  We study molecular beam epitaxy growth, morphology, crystal structure, and magnetic properties of Co nanoislands on CaF2/Si(111) surface. In order to have a full appreciation of complex growth kinetics at different stages, a comprehensive study of Co growth on CaF2 is carried out by atomic force, scanning electron, and transmission electron microscopies in the direct space, as well as by x-ray and electron diffraction in the reciprocal space. These experimental data are complemented by theoretical modeling. Magnetic properties are characterized by magneto-optical Kerr effect and superconducting quantum interference device magnetometries. Key effects influencing the Co growth on fluorite are addressed, including the sticking probability, the preferential nucleation sites, the size and shape time evolution, the dependence of Co morphology on temperature and Co exposure, and the coalescence mechanism. The two-stage deposition technique is developed, whereby the low-temperature seeding stage is used to facilitate Co nucleation, and the follow-up high-temperature deposition yields Co particles with high crystalline quality. Our results enable precise control over the resulting morphology, spatial ordering, and crystal structure affecting the magnetic properties. In particular, it is demonstrated that the transformation from dense to isolated Co nanoparticles leads to the change of the in-plane and out-of-plane magnetic anisotropy and also the sign of polar and longitudinal magneto-optical Kerr effects. DOI: 10.1103/PhysRevB.87.125407
• Influence of molecular structure on plasma carbonization of organic semiconductor molecules

  Toshihiro Shimada, Naoki Muraya, Jun Tomita, Takashi Yanase, Taro Nagahama

  Journal of Physics: Conference Series 441 (1) 12041  1742-6596 2013 [Not refereed][Not invited]
   

  The plasma treatment of organic semiconductor molecules includes issues related with nanoscale plasma interfaces. The process was examined by optical emission spectroscopy. It was found that molecules are sublimed by the heat and decomposed by the interaction with the plasma. The product carbon solids were examined by Raman spectroscopy. The raman spectra are strongly dependent on the molecular structures. The carbon solids which does not show graphitic Raman spectra have nanostructures originating from initial molecules.
• Fabrication of ZnO Nanorods by Atmospheric-Pressure Solid-Source CVD Using Ethanol-Assisted Low-Temperature Vaporization

  Sawako Miyamoto, Tetsuya Hasegawa, Hiroyuki Takahashi, Tetsu Yonezawa, Hajime Kiyono, Takashi Yanase, Taro Nagahama, Toshihiro Shimada

  BULLETIN OF THE CHEMICAL SOCIETY OF JAPAN 85 (12) 1287 - 1292 0009-2673 2012/12 [Refereed][Not invited]
   

  We report a method to produce vapor species from ZnO powder for the fabrication of ZnO nanorods. Mixing ethanol vapor with the inert carrier gas substantially lowered the gasification temperature of ZnO. c Axis-aligned ZnO nanorods were obtained by dispersing gold nanoparticles on Si substrates. The growth was identified as a vapor-solid (VS) mechanism. Choice of the substrate materials and their surface morphology were both critically important to control the shapes and orientation of grown ZnO.
• Solvent Effects on the Transient Characteristics of Liquid-Gate Field Effect Transistors with Silicon Substrate

  Takashi Yanase, Tetsuya Hasegawa, Taro Nagahama, Toshihiro Shimada

  JAPANESE JOURNAL OF APPLIED PHYSICS 51 (11) 111803  0021-4922 2012/11 [Refereed][Not invited]
   

  The transient characteristics of electric double layer (EDL) gated field-effect transistors with Si as an active semiconductor were studied using various electrolyte solutions of LiBF4 by applying a step-function voltage to determine the optimum electrolyte for semiconductor circuits using EDLs. The t(R), determined by EDL dynamics in the present experiment, was minimum as a function of the kind of solvent used owing to the competing effects of the EDL thickness and viscosity. The responses of the electrolyte solutions with various solvents at the same concentration were classified into three categories on the basis of t(R): slow response of a complex-forming solvent, intermediate response of protic solvents, and fast response of nonprotic solvents. The best response time was 55 mu s when a 1.0M acetonitrile solution was used as the liquid-gate insulator. (C) 2012 The Japan Society of Applied Physics
• Oxygen-17 nuclear magnetic resonance measurements on apatite-type lanthanum silicate (La-9.33(SiO4)(6)O-2)

  Hajime Kiyono, Yuuya Matsuda, Toshihiro Shimada, Mariko Ando, Itaru Oikawa, Hideki Maekawa, Susumu Nakayama, Shinobu Ohki, Masataka Tansho, Tadashi Shimizu, Pierre Florian, Dominuqie Massiot

  SOLID STATE IONICS 228 64 - 69 0167-2738 2012/11 [Refereed][Not invited]
   

  We used magic angle spinning (MAS), multiquantum (MQ)-MAS, and high-temperature (HT) nuclear magnetic resonance (NMR) measurements to investigate the oxide-ion conduction path of oxygen-17 (O-17) in apatite-type lanthanum silicate La-9.33(SiO4)(6)O-2. A highly crystalline apatite-type lanthanum silicate was specifically synthesized for the measurements. MAS and MQ-MAS NMR confirmed that four kinds of oxide-ion sites are present in the structure and showed a small extra peak (<1%) possibly due to an interstitial site. The high-temperature measurements showed that the line shape changed and sharpened with increasing temperature from 200 degrees C, and the peak position shifted at 700 degrees C. The comparison of the results between MAS NMR (room-temperature) and HT static NMR showed the exchange of oxide ions bonded to Si (O1, O2, and O3) but the apparent exchange between the oxide ions (O1, O2, and O3) and the oxide ion at the isolated site (O4) is not observed. The exchange of the oxide ions that are bonded to Si (O1, O2, and O3) suggests that they are the main diffusion species in oxide-ion conductivity. (C) 2012 Elsevier B.V. All rights reserved.
• Transparent conductivity of fluorine-doped anatase TiO2 epitaxial thin films

  Satoru Mohri, Yasushi Hirose, Shoichiro Nakao, Naoomi Yamada, Toshihiro Shimada, Tetsuya Hasegawa

  JOURNAL OF APPLIED PHYSICS 111 (9) 093528  0021-8979 2012/05 [Refereed][Not invited]
   

  Transparent conductive anatase TiO2-xFx(F:TiO2) epitaxial thin films were fabricated by reactive pulsed laser deposition with a solid fluorine source. F-doping as high as 1.6 x 10(21) cm(-3) (TiO1.95F0.05) was achieved under optimal growth conditions, and the obtained anatase TiO1.95F0.05 film had a low resistivity of 1.6 x 10(-3) Omega cm and a high internal transmittance of >95%. Furthermore, the refractive index of a TiO1.95F0.05 film was >0.2 less than that of undoped TiO2. By comparing the refractive indices of F:TiO2 and Nb:TiO2, we concluded that the decreased refractive index in F:TiO2 can be attributed to a reduced electronic polarizability due to increased bond ionicity as well as doped electrons. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4712061]
• Fabrication of Piezoelectric Polyurea Films by Alternating Deposition

  Takashi Yanase, Tetsuya Hasegawa, Taro Nagahama, Toshihiro Shimada

  JAPANESE JOURNAL OF APPLIED PHYSICS 51 (4) 041604  0021-4922 2012/04 [Refereed][Not invited]
   

  We demonstrate that polyurea films can be prepared by alternating deposition with automated deposition control involving quartz crystal microbalance monitoring and optical source heating. The thickness of the films was linearly controlled by changing the repetition time of deposition, and the stoichiometry obtained was much higher than +/- 5%. The surface roughness of a 600-nm-thick film was 0.5 nm, which ensures the nm thickness control of the deposited polymers. The piezoelectricity of the films was confirmed by directly measuring the current transient induced by mechanical stress and by measuring the capacitance change induced by electric field. (C) 2012 The Japan Society of Applied Physics
• Change in the Morphology of the Terrace Edges on Graphite Surfaces by Electrochemical Reduction

  Shosei Kubota, Tetsu Yonezawa, Taro Nagahama, Toshihiro Shimada

  CHEMISTRY LETTERS 41 (2) 187 - 188 0366-7022 2012/02 [Refereed][Not invited]
   

  We found that graphite surfaces can be etched by electrochemical reduction in sulfuric acid. Terraces with straight edges crossing with 60 degrees-multiple angles were found on surfaces by AFM observation. It suggests that crystallographic edges can be formed at room temperature in a controlled manner. Layer-by-layer etching of graphene sheets was possible by tuning the etching condition.
• Computational Analysis of Thermal Energetic Disorder in a Pentacene Crystal: Temperature Dependence of Trap Levels and Possible Novel Thermoelectric Contribution

  Toshihiro Shimada, Yu Ikuta, Yuya Tsuchida, Manabu Ohtomo, Tetsuya Hasegawa

  APPLIED PHYSICS EXPRESS 4 (6) 061601  1882-0778 2011/06 [Refereed][Not invited]
   

  In organic semiconductors, the sudden appearance of deep traps (30-100 meV) below 100-200 K is frequently observed experimentally even in highly crystalline films and single crystals. We analyzed this phenomenon by molecular dynamics combined with semi-empirical quantum chemical calculation, and found that defect levels are concealed by thermal disorder at high temperatures but appear as hole traps at low temperatures. We propose that the thermal energetic disorder may lead to a considerably large thermoelectric effect in organic semiconductors. (C) 2011 The Japan Society of Applied Physics
• Enhanced Carrier Transport in Uniaxially (001)-Oriented Anatase Ti0.94Nb0.06O2 Films Grown on Nanosheet Seed Layers

  Naoomi Yamada, Tatsuo Shibata, Kenji Taira, Yasushi Hirose, Shoichiro Nakao, Ngoc Lam Huong Hoang, Taro Hitosugi, Toshihiro Shimada, Takayoshi Sasaki, Tetsuya Hasegawa

  APPLIED PHYSICS EXPRESS 4 (4) 045801  1882-0778 2011/04 [Refereed][Not invited]
   

  Uniaxially (001)-oriented anatase Ti0.94Nb0.06O2 films were sputtered on a seed layer of glass covered with Ca2Nb3O10 nanosheets (CNO-NS). The films had an effective electron mass of 0.7m(0) (m(0) denotes the free electron mass), which was smaller than that of randomly oriented films, i.e., 0.9m(0). The as-grown films exhibited a low resistivity of 7.6 x 10(-4) Omega cm. Postdeposition annealing under H-2 atmosphere further reduced the resistivity to 4.0 x 10(-4) Omega cm. This value is comparable with that of conventional transparent conducting oxides. Results indicate that sputtering using CNO-NS is promising for the fabrication of highly conductive Ti1-xNbxO2 electrodes on glass. (C) 2011 The Japan Society of Applied Physics
• Enhanced Carrier Transport in Uniaxially (001)-Oriented Anatase Ti0.94Nb0.06O2 Films Grown on Nanosheet Seed Layers

  Naoomi Yamada, Tatsuo Shibata, Kenji Taira, Yasushi Hirose, Shoichiro Nakao, Ngoc Lam Huong Hoang, Taro Hitosugi, Toshihiro Shimada, Takayoshi Sasaki, Tetsuya Hasegawa

  APPLIED PHYSICS EXPRESS 4 (4) 045801  1882-0778 2011/04 [Refereed][Not invited]
   

  Uniaxially (001)-oriented anatase Ti0.94Nb0.06O2 films were sputtered on a seed layer of glass covered with Ca2Nb3O10 nanosheets (CNO-NS). The films had an effective electron mass of 0.7m(0) (m(0) denotes the free electron mass), which was smaller than that of randomly oriented films, i.e., 0.9m(0). The as-grown films exhibited a low resistivity of 7.6 x 10(-4) Omega cm. Postdeposition annealing under H-2 atmosphere further reduced the resistivity to 4.0 x 10(-4) Omega cm. This value is comparable with that of conventional transparent conducting oxides. Results indicate that sputtering using CNO-NS is promising for the fabrication of highly conductive Ti1-xNbxO2 electrodes on glass. (C) 2011 The Japan Society of Applied Physics
• Epitaxial Growth of Organic Molecules on Vicinal Surfaces of Single Crystals

  Toshihiro Shimada, Takafumi Sakurada, Atsushi Koma

  MRS Proceedings 451 0272-9172 2011/02/10
• Strong Pressure Effect in the Sublimation from Tetracene Single Crystals and Development of Surface Cleaning Technique for Organic Semiconductors

  Manabu Ohtomo, Kenji Itaka, Tetsuya Hasegawa, Toshihiro Shimada

  APPLIED PHYSICS EXPRESS 4 (2) 021601  1882-0778 2011/02 [Refereed][Not invited]
   

  We studied the sublimation of tetracene single crystals under vacuum and 1 atm inert gas to develop the surface cleaning technique for organic semiconductors. It was found that the microscopic sublimation behavior is strongly dependent on the gas pressure. Nanometer-scale roughening was observed after heating in vacuum, and layer-by-layer sublimation was observed under 1 atm Ar gas. Reflection high energy electron diffraction analysis of the topmost surface showed streak patterns, indicating that surface contaminants were successfully removed. (C) 2011 The Japan Society of Applied Physics
• Strong Pressure Effect in the Sublimation from Tetracene Single Crystals and Development of Surface Cleaning Technique for Organic Semiconductors

  Manabu Ohtomo, Kenji Itaka, Tetsuya Hasegawa, Toshihiro Shimada

  APPLIED PHYSICS EXPRESS 4 (2) 021601  1882-0778 2011/02 [Refereed][Not invited]
   

  We studied the sublimation of tetracene single crystals under vacuum and 1 atm inert gas to develop the surface cleaning technique for organic semiconductors. It was found that the microscopic sublimation behavior is strongly dependent on the gas pressure. Nanometer-scale roughening was observed after heating in vacuum, and layer-by-layer sublimation was observed under 1 atm Ar gas. Reflection high energy electron diffraction analysis of the topmost surface showed streak patterns, indicating that surface contaminants were successfully removed. (C) 2011 The Japan Society of Applied Physics
• The Electronic Structures of Fullerene/Transition-Metal Hybrid Material

  Yoshihiro Matsumoto, Seiji Sakai, Hiroshi Naramoto, Norie Hirao, Yuji Baba, Isamu Sugai, Koki Takanashi, Toshihiro Shimada, Yoshihito Maeda

  Materials Research Society Symposium Proceedings 1081 2011/02 [Refereed][Not invited]
  
• Epitaxial Growth and Charge Density Wave of TaSe₂

  Toshihiro Shimada, Fumio S. Ohuchi, Bruce A. Parkinson

  MRS Proceedings 230 0272-9172 2011/02
• Rheed Oscillation During the Epitaxial Growth of Layered Materials

  Toshihiro Shimada, Fumio S. Ohuchi, Atsushi Koma

  MRS Proceedings 208 0272-9172 2011/02
• Fabrication of transparent conductive W-doped SnO2 thin films on glass substrates using anatase TiO2 seed layers

  Shoichiro Nakao, Naoomi Yamada, Taro Hitosugi, Yasushi Hirose, Toshihiro Shimada, Tetsuya Hasegawa

  PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 2 8 (2) 543  1862-6351 2011 [Refereed][Not invited]
   

  Pulsed laser deposition was used to grow W-doped SnO2 (WTO) thin films on glass substrates. By using 10-nm-thick polycrystalline anatase TiO2 seed layers formed on the glass substrates, the lowest resistivity of 3.5 x 10(-4) Omega cm, with a mobility of 84 cm(2)V(-1)s(-1) and a carrier concentration of 2.1 x 10(20) cm(-3), was obtained at a W concentration of 1.5 at.%. An optimized WTO film with a sheet resistance of 9.1 Omega/square exhibited an optical transmittance of over 70% at wavelengths ranging from 400 to 1950 nm. These transport and optical properties are comparable to those of Ta-doped SnO2. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
• Ultrasensitive and Rapid Measurement of Water Vapor Transmission Rate in Barrier Materials

  Toshihiro Shimada, Yoichiro Nakano, Yoshikazu Takahashi, Toshiyuki Kanno

  IDW'11: PROCEEDINGS OF THE 18TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3 1717 - 1720 1883-2490 2011 [Refereed][Not invited]
   

  We have developed an instrument for ultrasensitive (<10(-6) g/m(2)/day) and rapid (<1 day) measurement of water vapor transmission rate in gas barrier materials. Water vapor that has permeated through the barrier in atmospheric carrier gas is condensed by a cold trap and transferred to mass spectrometer in ultrahigh vacuum.
• High magnetic field effect in organic light emitting diodes

  Yuichiro Goto, Takuya Noguchi, Utahito Takeuchi, Kunitada Hatabayashi, Yasushi Hirose, Takayuki Uchida, Takehiko Sasaki, Tetsuya Hasegawa, Toshihiro Shimada

  ORGANIC ELECTRONICS 11 (7) 1212 - 1216 1566-1199 2010/07 [Refereed][Not invited]
   

  Fluorescent and phosphorescent organic light emitting diodes (OLEDs) were measured in high magnetic field up to 9 T. The current efficiency steeply increased below 100 mT as reported but gradually decreased when the field was larger. In the range of 0.1-6.5 T, the decrease was proportional to the square of the magnetic field, whereas in the range between 6.5 and 9 T, it was proportional to the square root of the magnetic field. In contrast, phosphorescent OLED did not show magnetic field dependence. Unipolar devices of n-type Alq(3) (tris-(8-hydroxyquinolino) aluminum) and p-type alpha-NPD (N',N'-di(naphthalene-1-yl)-N,N'-dipheyl-benzidine) showed positive linear magnetoresistance only for minority carriers. The mechanism of the quadratic dependence of the electroluminescent intensity is discussed based on the experimental results. (c) 2010 Elsevier B.V. All rights reserved.
• High magnetic field effect in organic light emitting diodes

  Yuichiro Goto, Takuya Noguchi, Utahito Takeuchi, Kunitada Hatabayashi, Yasushi Hirose, Takayuki Uchida, Takehiko Sasaki, Tetsuya Hasegawa, Toshihiro Shimada

  ORGANIC ELECTRONICS 11 (7) 1212 - 1216 1566-1199 2010/07 [Refereed][Not invited]
   

  Fluorescent and phosphorescent organic light emitting diodes (OLEDs) were measured in high magnetic field up to 9 T. The current efficiency steeply increased below 100 mT as reported but gradually decreased when the field was larger. In the range of 0.1-6.5 T, the decrease was proportional to the square of the magnetic field, whereas in the range between 6.5 and 9 T, it was proportional to the square root of the magnetic field. In contrast, phosphorescent OLED did not show magnetic field dependence. Unipolar devices of n-type Alq(3) (tris-(8-hydroxyquinolino) aluminum) and p-type alpha-NPD (N',N'-di(naphthalene-1-yl)-N,N'-dipheyl-benzidine) showed positive linear magnetoresistance only for minority carriers. The mechanism of the quadratic dependence of the electroluminescent intensity is discussed based on the experimental results. (c) 2010 Elsevier B.V. All rights reserved.
• Fabrication of highly conductive Ta-doped SnO2 polycrystalline films on glass using seed-layer technique by pulse laser deposition

  Shoichiro Nakao, Naoomi Yamada, Taro Hitosugi, Yasushi Hirose, Toshihiro Shimada, Tetsuya Hasegawa

  THIN SOLID FILMS 518 (11) 3093 - 3096 0040-6090 2010/03 [Refereed][Not invited]
   

  We discuss the fabrication of highly conductive Ta-doped SnO2 (Sn1-xTaxO2: ITO) thin films on glass by pulse laser deposition. On the basis of the comparison of X-ray diffraction patterns and resistivity (rho) values between epitaxial films and polycrystalline films deposited on bare glass, we proposed the use of seed-layers for improving the conductivity of the TTO polycrystalline films. We investigated the use of rutile TiO2 and NbO2 as seed-layers; these are isostructural materials of SnO2, which are expected to promote epitaxial-like growth of the TTO films. The films prepared on the 10-nm-thick seed-layers exhibited preferential growth of the TTO (110) plane. The TTO film with x=0.05 on rutile TiO2 exhibited p = 3.5 x 10(-4)Omega cm, which is similar to those of the epitaxial films grown on Al2O3 (0001). (C) 2009 Elsevier B.V. All rights reserved.
• Transparent conducting Nb-doped anatase TiO2 (TNO) thin films sputtered from various oxide targets

  Naoomi Yamada, Taro Hitosugi, Junpei Kasai, Ngoc Lam Huong Hoang, Shoichiro Nakao, Yasushi Hirose, Toshihiro Shimada, Tetsuya Hasegawa

  THIN SOLID FILMS 518 (11) 3101 - 3104 0040-6090 2010/03 [Refereed][Not invited]
   

  Transparent conducting Nb-doped anatase TiO2 (TNO) epitaxial films were sputtered from TiO2-, Ti2O3-, and Ti-based targets at various oxygen partial pressures (Po-2). Using the TiO2- and Ti2O3-based targets, highly conductive films showing a resistivity (rho) of similar to 3 x 10(-4) Omega cm could be formed without postdeposition treatment. In the case of the TNO films formed from the Ti-based target, reductive annealing had to be carried out at a temperature of 600 degrees C to achieve similar resistivity values. Thus, the use of oxide targets is preferable to obtain as-grown transparent conducting TNO films. In particular, the Ti2O3-based target is practically advantageous, because it offers a wide range of optimal Po-2 values at which p values of the order of 10(-4) Omega cm are achievable. (C) 2009 Elsevier B.V. All rights reserved.
• Very high temperature annealing effect on amorphous carbon films grown on refractory oxide substrates by pulsed laser deposition

  Takuya Noguchi, Toshihiro Shimada, Takashi Chiba, Masao Terada, Tetsuya Hasegawa

  DIAMOND AND RELATED MATERIALS 19 (2-3) 107 - 109 0925-9635 2010/02 [Refereed][Not invited]
   

  We have carried out very high temperature heat treatment at 1400-2700 degrees C of about 10 nm-thick amorphous carbon thin films deposited on refractory substrates MgO, Al2O3, and yttria-stabilized zirconia (YSZ) using pulsed laser deposition techniques. After the annealing, a few nanometer scale sp(2) crystallization of the films and a large corrugation with a height of more than 1 mu m were observed by Raman spectroscopy analysis and optical/atomic force microscopes, respectively. The corrugation is probably caused by tire formation of gases at the film/substrate interface during the heat treatment. (C) 2009 Elsevier B.V. All rights reserved.
• Transport properties and electronic states of anatase Ti1-xWxO2 epitaxial thin films

  Utahito Takeuchi, Akira Chikamatsu, Taro Hitosugi, Hiroshi Kumigashira, Masaharu Oshima, Yasushi Hirose, Toshihiro Shimada, Tetsuya Hasegawa

  JOURNAL OF APPLIED PHYSICS 107 (2) 023705  0021-8979 2010/01 [Refereed][Not invited]
   

  We have investigated the transport properties and electronic states of W-doped anatase TiO2 (Ti1-xWxO2) fabricated by pulsed-laser deposition. Based on transport and photoemission spectroscopy (PES) measurements, we discuss the conduction mechanism of Ti1-xWxO2, focusing on the valence state of W. The Ti0.95W0.05O2 film deposited under optimized conditions showed a resistivity of 2x10(-3) cm at room temperature, which is approximately ten times higher than that of Ti0.94Nb0.06O2. This is mainly due to the lower carrier density in Ti1-xWxO2 films. From PES measurements of Ti0.91W0.09O2 films, we observed the finite density of states originating from O 2p hybridized with W near the top of the valence band. However, we could not find any states at the same position in the Ti0.94Nb0.06O2 films. In addition, the density of states near the Fermi level [N(E-F)] was found to be quite low in the Ti0.91W0.09O2 films. Indeed, this is in sharp contrast to Ti0.94Nb0.06O2, which indicates a remarkably high N(E-F) value assigned to the bottom of the Ti 3d conduction band. The difference in transport properties between Ti1-xWxO2 and Ti1-xNbxO2 can be attributed to the existence of impurity states that trap carriers associated with doped W atoms.
• Highly Sensitive and Rapid Measurement of Gas Barrier Properties of Flexible Films and Sealing Resins Based on a Low Temperature Trap and Mass Spectroscopy

  Toshihiro Shimada, Yoshikazu Takahashi, Toshiyuki Kanno

  APPLIED PHYSICS EXPRESS 3 (2) 021701  1882-0778 2010 [Refereed][Not invited]
   

  We developed a novel apparatus for the measurement of the gas barrier properties of soft materials. The measurement principle is based on the use of a low temperature trap to transfer the permeated vapor from the sample space under atmospheric pressure to the mass spectrometer situated in an ultrahigh vacuum. We have demonstrated that the sensitivity, dynamic range and lead time for the measurement can be significantly improved from those previously reported. It was revealed that the diffusion time in a polymer film must be considered in the measurement of high barrier films. (C) 2010 The Japan Society of Applied Physics DOI: 10.1143/APEX.3.021701
• High Mobility Exceeding 80 cm(2) V-1 s(-1) in Polycrystalline Ta-Doped SnO2 Thin Films on Glass Using Anatase TiO2 Seed Layers

  Shoichiro Nakao, Naoomi Yamada, Taro Hitosugi, Yasushi Hirose, Toshihiro Shimada, Tetsuya Hasegawa

  APPLIED PHYSICS EXPRESS 3 (3) 031102  1882-0778 2010 [Refereed][Not invited]
   

  High-mobility Ta-doped SnO2 (TTO) thin films were grown on glass substrates by pulsed laser deposition using a seed-layer technique. The use of 10-nm-thick polycrystalline anatase TiO2 seed layers was found to lead to the preferred growth of (200)-oriented TTO films, resulting in a 30% increase in the carrier density and a more than two times increase in mobility, compared to films grown directly on the glass substrates. The highest mobility obtained was 83 cm(2) V-1 s(-1) with a resistivity of 2.8 x 10(-4) Omega cm, whereas the film with the lowest resistivity of 1.8 x 10(-4) Omega cm had a mobility of 60 cm(2) V-1 s(-1). (C) 2010 The Japan Society of Applied Physics
• Magnetic and Transport Properties of Anatase TiO2 Codoped with Fe and Nb

  Enju Sakai, Akira Chikamatsu, Yasushi Hirose, Toshihiro Shimada, Tetsuya Hasegawa

  APPLIED PHYSICS EXPRESS 3 (4) 043001  1882-0778 2010 [Refereed][Not invited]
   

  We have measured the magnetic and transport properties of FexNbyTi1-x-yO2-delta (x = 0.06, y = 0, 0.1, 0.03) films deposited by pulsed laser deposition at various partial oxygen pressures (PO2). The Fe and Nb codoped films have a carrier concentration of > 3 x 10(20) cm(-3), which is independent of PO2 and far exceeds the critical carrier concentration for ferromagnetic ordering in Fe0.06Ti0.94O2-delta (1 x 10(19) cm(-3)). Room-temperature ferromagnetism was observed only when deposition was conducted in reducing atmospheres (i.e., PO2 <= 1 x 10(-6) Torr) for all the FexNbyTi1-x-yO2-delta films, indicating that there is a critical oxygen vacancy density for the ferromagnetic transition. (C) 2010 The Japan Society of Applied Physics
• Carrier Compensation by Excess Oxygen Atoms in Anatase Ti0.94Nb0.06O2+delta Epitaxial Thin Films

  Hiroyuki Nogawa, Taro Hitosugi, Akira Chikamatsu, Shoichiro Nakao, Yasushi Hirose, Toshihiro Shimada, Hiroshi Kumigashira, Masaharu Oshima, Tetsuya Hasegawa

  JAPANESE JOURNAL OF APPLIED PHYSICS 49 (4) 041102  0021-4922 2010 [Refereed][Not invited]
   

  We report the effect of post-deposition annealing on the electrical transport properties of anatase Ti0.94Nb0.06O2 (TNO) epitaxial thin films. Annealing TNO films in pure oxygen drastically suppressed the carrier density (n(e)). A high n(e) of the order of 10(21) cm(-3) was recovered by successive annealing in pure hydrogen. Core-level X-ray photoemission spectroscopy revealed that Ti and Nb respectively exist as tetravalent and pentavalent ions in fully oxidized samples. The concentration of Nb5+ relative to that of Nb4+ tends to increase with O-2 annealing, suggesting that carriers released by Nb donors are compensated by electron-killing impurity states created by O-2 annealing. Based on these findings, we propose that excess oxygen atoms incorporated by O-2 annealing occupy interstitial sites and behave as deep acceptor states, which compensate electron carriers generated by Nb doping. Resonant valence-band photoemission spectroscopy directly confirmed the formation of deep acceptor states associated with oxygen annealing. (C) 2010 The Japan Society of Applied Physics
• Electric Double Layer Gate Field-Effect Transistors Based on Si

  Takashi Yanase, Toshihiro Shimada, Tetsuya Hasegawa

  JAPANESE JOURNAL OF APPLIED PHYSICS 49 (4) 04DK06  0021-4922 2010 [Refereed][Not invited]
   

  Electric double layer field-effect transistors (EDL-FETs) were fabricated using single crystal Si wafer as the active semiconductor and various characteristics were studied including dynamic response against step-function gate bias. The static FET mobility was more than 100 cm(2) V-1 s(-1). The response time of the drain current was 20 mu s for ionic liquid and 3 ms for poly(ethylene glycol) (PEG) solution of LiBF4. Unexpected fast response was observed at a certain "speed up bias'' condition. This effect will be useful to switching circuits using EDL-FETs. (C) 2010 The Japan Society of Applied Physics
• Very high temperature chemical vapor deposition of new carbon thin films using organic semiconductor molecular beam sources

  Takuya Noguchi, Toshihiro Shimada, Akinori Hanzawa, Tetsuya Hasegawa

  THIN SOLID FILMS 518 (2) 778 - 780 0040-6090 2009/11 [Refereed][Not invited]
   

  We carried out the preparation and characterization of new carbon films deposited using an organic molecular beam deposition apparatus with very high substrate temperature (from room temperature to 2670 K), which we newly developed. When we irradiated molecular beam of organic semiconductor perylene tetracarboxylic acid dianhydride (PTCDA) on Y(0.07)Zr(0.93)O(2) (111) at 2170 K, a new carbon material was formed via decomposition and fusing of the molecules. The films were characterized with an atomic force microscope (AFM), Raman spectroscopy, X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). Zirconium carbide (ZrC) films were identified beneath the topmost carbon layer by XRD and XPS analyses, which results from chemical reactions of the substrate and the molecules. Partially graphitized aromatic rings of PTCDA were observed from Raman spectroscopy. The present technique - very high temperature chemical vapor deposition using organic semiconductor sources - will be useful to study a vast unexplored field of covalent carbon solids. (C) 2009 Elsevier B.V. All rights reserved.
• In-Situ TEM Observations of the Crystallization Process of Solution-Prepared MoS2 Amorphous Particles

  Akinori Hanzawa, Toshihiro Shimada, Tetsuya Hasegawa, Takahiro Sato, Takeo Kamino, Tetsu Yonezawa

  JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 9 (11) 6736 - 6740 1533-4880 2009/11 [Refereed][Not invited]
   

  The crystallization of polymer-mixed amorphous molybdenum sulfide was observed in-situ by a TEM equipped with a heated specimen holder. High electron beam irradiation induced the formation of a crystal structure with a lattice spacing of 0.62 nm, which corresponds to the layer spacing of MoS2. With a lower electron dose, a possible new crystal structure of molybdenum sulfide with several fringe spacings was identified at room temperature. An ordered layered structure Of MoS2 appeared after annealing at 600 degrees C. The completely different crystal phase found here might be responsible for the high temperature required for the formation of the MoS2 layered structure.
• Direct Observation of Gas Phase Nucleation during Physical Vapor Transport Growth of Organic Single Crystals Using a Transparent Furnace

  Miyamoto S, Shimada T, Ohtomo M, Chikamatsu A, Hasegawa T

  Japanese Journal of Applied Physics The Japan Society of Applied Physics 48 (11) 118003-1 - 118003-2 0021-4922 2009/11 [Refereed][Not invited]
   

  We observed the physical vapor transport growth of tetracene (C18H12) using a transparent furnace. We found that free-standing small crystals are formed in the gas flow and sometimes stick on the solid surface and become the seeds for larger crystals. A theoretically predicted convection was observed by tracking the trajectory of flowing crystal particles.
• Fabrication of EuTiO3 Epitaxial Thin Films by Pulsed Laser Deposition

  Kunitada Hatabayashi, Taro Hitosugi, Yasushi Hirose, Xianqiang Cheng, Toshihiro Shimada, Tetsuya Hasegawa

  JAPANESE JOURNAL OF APPLIED PHYSICS 48 (10) 0021-4922 2009/10 [Refereed][Not invited]
   

  We have fabricated high-quality epitaxial EuTiO3(100) films on SrTiO3 substrates by pulsed laser deposition. In situ reflection high-energy electron diffraction (RHEED) monitoring revealed clear intensity oscillation, indicating layer-by-layer growth of EuTiO3. Furthermore, the obtained films had atomically flat surfaces with a step-terrace structure. From magnetization vs temperature measurements, we confirmed that the EuTiO3 films have antiferromagnetic ordering with a Neel temperature of 3.7 K, and that they could be transformed to a ferromagnetic state by applying a magnetic field. We also found that the magnetic properties of the EuTiO3 films are sensitive to cell volume, as predicted by recent first-principles band calculations. (C) 2009 The Japan Society of Applied Physics
• Band dispersion of quasi-single crystal thin film phase pentacene monolayer studied by angle-resolved photoelectron spectroscopy

  Manabu Ohtomo, Tadamasa Suzuki, Toshihiro Shimada, Tetsuya Hasegawa

  APPLIED PHYSICS LETTERS 95 (12) 123308  0003-6951 2009/09 [Refereed][Not invited]
   

  Intermolecular band dispersion of thin film phase pentacene grown epitaxially on step-bunched root 3 x root 3 Bi-Si(111) was investigated using angle resolved photoemission spectroscopy at 130 K. We evaluated the transfer integrals using two-dimensional tight-binding fit to the experimental dispersion and found that adjacent molecules in Gamma-M direction have the strongest coupling as predicted. The estimated effective mass at the top of the valence band was isotropic and ranged between 0.8 and 1.0 of the electron mass. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3232205]
• Direct growth of transparent conducting Nb-doped anatase TiO2 polycrystalline films on glass

  Naoomi Yamada, Taro Hitosugi, Junpei Kasai, Ngoc Lam Huong Hoang, Shoichiro Nakao, Yasushi Hirose, Toshihiro Shimada, Tetsuya Hasegawa

  JOURNAL OF APPLIED PHYSICS 105 (12) 123702  0021-8979 2009/06 [Refereed][Not invited]
   

  This paper proposes a novel sputter-based method for the direct growth of transparent conducting Ti1-xNbxO2 (TNO) polycrystalline films on glass, without the need for any postdeposition treatments, by the use of an initial seed-layer. Anatase TNO epitaxial films grown on LaAlO3 (100) substrates under a reducing atmosphere exhibited a low resistivity (rho) of (3-6) x 10(-4) Omega cm. On glass, however, highly resistive rutile phase polycrystalline films (rho similar to 100 Omega cm) formed preferentially under the same conditions. These results suggest that epitaxial stabilization of the oxygen-deficient anatase phase occurs on lattice-matched substrates. To produce a similar effect on a glass surface, we deposited a seed-layer of anatase TNO with excellent crystallinity under an increased oxygen atmosphere. As a result, anatase phase TNO polycrystalline films could be grown even under heavily reducing atmospheres. An optimized film exhibited rho = 1.1 x 10(-3) Omega cm and optical absorption lower than 10% in the visible region. This rho value is more than one order of magnitude lower than values reported for directly deposited TNO polycrystalline films. This indicates that the seed-layer method has considerable potential for producing transparent conducting TNO polycrystalline films on glass. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3148267]
• Large electron mass anisotropy in a d-electron-based transparent conducting oxide: Nb-doped anatase TiO2 epitaxial films

  Yasushi Hirose, Naoomi Yamada, Shoichiro Nakao, Taro Hitosugi, Toshihiro Shimada, Tetsuya Hasegawa

  PHYSICAL REVIEW B 79 (16) 165108  1098-0121 2009/04 [Refereed][Not invited]
   

  Electron mass anisotropy in the Nb-doped anatase TiO2 (TNO) was determined by polarized infrared spectroscopy measurements for (012)-oriented TNO epitaxial films. The electron mass along the c axis, m(< 001 >)(*), derived by Drude analyses, was found to be 0.5-3.3 m(0), which was 3-6 times larger than that along the a axis, m(< 100 >)(*), 0.2-0.6 m(0). This large anisotropy was attributed to not only the anisotropic crystal structure but also the d-orbital-dominated conduction band. These results indicate that control of crystallographic orientation is of crucial importance for realizing high conductivity in polycrystalline TNO films.
• Random Telegraphic Conductance Fluctuation at Au-Pentacene-Au Nanojunctions

  Yuk Kihira, Toshihiro Shimada, Yutaka Matsuo, Eiichi Nakamura, Tetsuya Hasegawa

  NANO LETTERS 9 (4) 1442 - 1446 1530-6984 2009/04 [Refereed][Not invited]
   

  Random telegraphic noises with a preferential jump height around 0.018G(0) were observed in the conductance traces of the Au-pentacene-Au junctions. The distribution of the plateau lifetime obeyed an exponential distribution, but the decay constants were independent of the height of the adjacent conductance jumps or the measurement temperature. This result, along with the buckyferrocene (Fe(C-60(CH3)(5))C5H5) result, suggests that the conductance fluctuation originates from the current-induced geometrical fluctuation around a single molecule.
• Random Telegraphic Conductance Fluctuation at Au-Pentacene-Au Nanojunctions

  Yuk Kihira, Toshihiro Shimada, Yutaka Matsuo, Eiichi Nakamura, Tetsuya Hasegawa

  NANO LETTERS 9 (4) 1442 - 1446 1530-6984 2009/04 [Refereed][Not invited]
   

  Random telegraphic noises with a preferential jump height around 0.018G(0) were observed in the conductance traces of the Au-pentacene-Au junctions. The distribution of the plateau lifetime obeyed an exponential distribution, but the decay constants were independent of the height of the adjacent conductance jumps or the measurement temperature. This result, along with the buckyferrocene (Fe(C-60(CH3)(5))C5H5) result, suggests that the conductance fluctuation originates from the current-induced geometrical fluctuation around a single molecule.
• X-ray absorption spectroscopy and magnetic circular dichroism in codeposited C-60-Co films with giant tunnel magnetoresistance

  Matsumoto Yoshihiro, Sakai Seiji, Takagi Yasumasa, Nakagawa Takeshi, Yokoyama Toshihiko, Shimada Toshihiro, Mitani Seiji, Naramoto Hiroshi, Maeda Yoshihito

  CHEMICAL PHYSICS LETTERS 470 (4-6) 244 - 248 0009-2614 2009/03/05 [Refereed][Not invited]
  
• Fabrication of TiO2-based transparent conducting oxide on glass and polyimide substrates

  T. Hitosugi, N. Yamada, N. L. H. Hoang, J. Kasai, S. Nakao, T. Shimada, T. Hasegawa

  THIN SOLID FILMS 517 (10) 3106 - 3109 0040-6090 2009/03 [Refereed][Not invited]
   

  We report on preparation and properties of anatase Nb-doped TiO2 transparent conducting oxide films on glass and polyimide substrates. Amorphous Ti0.96Nb0.04O2 films were deposited at room temperature by using sputtering, and were then crystallized through annealing under reducing atmosphere. Use of a seed layer substantially improved the crystallinity and resistivity (rho) of the films. We attained rho=9.2 X 10(-4) Omega cm and transmittance of similar to 70% in the visible region on glass by annealing at 300 degrees C in vacuum. The minimum rho of 7.0 x 10(-4) Omega cm was obtained by 400 degrees C annealing in pure H-2. (C) 2008 Elsevier B.V. All rights reserved.
• Detailed Investigation on the Possibility of Nanoparticles of Various Metal Elements for Surface-Assisted Laser Desorption/Ionization Mass Spectrometry

  Tetsu Yonezawa, Hideya Kawasaki, Akira Tarui, Takehiro Watanabe, Ryuichi Arakawa, Toshihiro Shimada, Fumitaka Mafune

  ANALYTICAL SCIENCES 25 (3) 339 - 346 0910-6340 2009/03 [Refereed][Not invited]
   

  In this paper, we describe systematic detailed considerations of the feasibility of using various metal nanoparticles for organic-matrix-free surface-assisted laser desorption/ionization mass spectrometry (SALDI-MS). In order to avoid the influence of organic molecules on the nanoparticles, stabilizer-free bare nanoparticles of Ag, Au, Cu and Pt were prepared by laser ablation. Although all metal nanoparticles absorbed N-2 laser light (337 nm) energy, the performance of desorption/ionization of a representative peptide, angiotensin 1, strongly depended on the metal element. Citrate buffer was used as a proton source; it reduced the amount of alkali cation adducts present. Then, protonated molecules of analytes predominated in the mass spectra when Au and Pt nanoparticles were used. Pt nanoparticles showed the highest performance in SALDI-MS, owing to their smaller heat conductivity and higher melting temperature. The selective desorption of a cationic surfactant with longer alkyl chains and a peptide with methionine was also observed.
• Epitaxial Growth and Photoelectron Spectroscopy of Pentacene

  SHIMADA Toshihiro, SUZUKI Tadamasa, OHTOMO Manabu, HASEGAWA Tetsuya

  J. Surf. Sci. Soc. Jpn. The Surface Science Society of Japan 30 (1) 7 - 10 0388-5321 2009/01/10 

  We developed a technique to prepare highly ordered thin films of organic molecular semiconductors. A quasi single crystalline monolayer of thin film phase pentacene was epitaxially grown on a substrate with a nm scale template prepared by step bunching of Si(111) surface. Band dispersion of the films was measured by angle resolved photoelectron spectroscopy at different temperatures and transfer integrals were derived from tight binding fit to the dispersion observed at 130 K. When the temperature was elevated to 300 K the second derivative plot of the photoelectron spectra became broader and the band dispersion was lost in two directions, whereas the dispersion was still observed in one direction. This finding suggests the anisotropy in phonon scattering, which determines the carrier mobility in the organic semiconductors at room temperature.
• Hatabayashi, K Hitosugi, T Hirose, Y Cheng, XQ Shimada, T Hasegawa, T

  Fabrication of EuTi, Epitaxial Thin Films by Pulsed Laser Deposition

  Jpn. J. Appl. Phys. 48 100208  2009 [Refereed][Not invited]
  
• Multiple-scattering approach to Ti L-2,L-3-edge XMCD analyses for Co doped TiO2

  Takashi Maruyama, Takumi Ohtsuki, Enju Sakai, Hitoshi Abe, Toshihiro Shimada, Tetsuya Hasegawa, Shin-ichi Nagamatsu, Takashi Fujikawa

  14TH INTERNATIONAL CONFERENCE ON X-RAY ABSORPTION FINE STRUCTURE (XAFS14), PROCEEDINGS 190 1742-6588 2009 [Not refereed][Not invited]
   

  We have measured Ti L-2,L-3-edge X-ray magnetic circular dichroism (XMCD) spectra of Co doped anatase TiO2 (Co0.05Ti0.95O2), where nonzero XMCD spectra have been observed even at Ti L-2,L-3-edge. In order to understand the reason why the XMCD signals are observed at Ti L-2,L-3-edge, we have applied the relativistic multiple-scattering approach to the analyses of the observed XMCD spectra. The results show that the Ti L-2,L-3-edge XMCD spectra are dominated by the spin-dependent exchange scatterings on the spin-polarized Co sites. We find a good agreement with the observed L-3 XMCD spectra. The calculated XMCD spectra are rather sensitive to the spin moment on the X-ray absorbing Ti. We conclude that the spin moment on Ti site is very small and antiparallel to that on Co. The calculated results also show that the observed Ti L-2,L-3-edge XMCD signals arise from the Ti atoms within about 4 A from spin-polarized Co atoms.
• Artificial Grain Alignment of Organic Crystalline Thin Films

  Toshihiro Shimada

  ARTIFICIALLY INDUCED GRAIN ALIGNMENT IN THIN FILMS 1150 139 - 150 0272-9172 2009 [Refereed][Not invited]
   

  It is important to obtain single crystalline organic thin films for electronics and optics applications. Due to the mismatching in the crystal symmetry, it is difficult to align the crystalline grains of organic molecular films even on single crystalline surfaces. We have developed several techniques for the artificial grain alignment in organic epitaxial growth. (1) Use of nanoscale-textured surfaces prepared by step bunching of vicinally-cut single crystalline surfaces, in which the height of the steps is critically important. (2) Application of external electric field. (3) Optical excitation of the molecules which can be applied to the polar semiconducting molecules. These techniques might be applicable to other materials including ionic materials and ferroelectrics.
• Low-temperature fabrication of transparent conducting polycrystalline Nb-doped TiO2 films by sputtering

  Hoang N.L.H, Yamada N, Hitosugi T, Kasai J, Nakao S, Shimada T, Hasegawa T

  Materials Research Society Symposium Proceedings 1109 25 - 30 2009 [Refereed][Not invited]
  
• Large electron mass anisotropy in anatase Ti1-xNb xO2 transparent conductor

  Hirose Y, Yamada N, Nakao S, Hitosugi T, Shimada T, Konuma S, Hasegawa T

  Materials Research Society Symposium Proceedings 1109 86 - 91 2009 [Refereed][Not invited]
  
• Growth of transparent conducting Nb-doped anatase TiO2 thin films on glass using seed layers

  Yamada N, Hitosugi T, Nakao S, Kasai J, Hirose Y, Hoang N.L.H, Shimada T, Hasegawa T

  Materials Research Society Symposium Proceedings 1109 15 - 24 2009 [Refereed][Not invited]
  
• Step-bunched Bi-terminated Si(111) surfaces as a nanoscale orientation template for quasisingle crystalline epitaxial growth of thin film phase pentacene

  Toshihiro Shimada, Manabu Ohtomo, Tadamasa Suzuki, Tetsuya Hasegawa, Keiji Ueno, Susumu Ikeda, Koichiro Saiki, Miho Sasaki, Katsuhiko Inaba

  APPLIED PHYSICS LETTERS 93 (22) 223303  0003-6951 2008/12 [Refereed][Not invited]
   

  We developed a nanoscale orientation template for quasisingle crystalline epitaxial growth of thin film phase pentacene. By using alpha-3x3 Bi termination of surface dangling bonds on step-bunched vicinal surface of Si(111), thin film phase epitaxial pentacene was grown with the crystal axes aligned to the surface steps. Alignment occurred when the step height was higher than the molecular height. The mechanism of the alignment was examined by calculating the energy of the crystal edge.
• Nucleation on the substrate surfaces during liquid flux-mediated vacuum deposition of rubrene

  Toshihiro Shimada, Yui Ishii, Keiji Ueno, Tetsuya Hasegawa

  JOURNAL OF CRYSTAL GROWTH 311 (1) 163 - 166 0022-0248 2008/12 [Refereed][Not invited]
   

  We studied the effect of the substrate materials on the solution-mediated vacuum deposition of organic semiconductor rubrene using liquid flux with a low vapor pressure. We found that bis-2-ethylhexyl phthalate was suitable as the liquid flux. It was revealed that the microscopic crystal shape completely changed when different substrates were used. This result clearly indicates the nucleation of the crystals occurs on the substrate surface submerged in the solution. Epitaxially oriented needle crystals as long as 5 mm were obtained by using Au(111) substrate. (C) 2008 Elsevier B.V. All rights reserved.
• Low-temperature Fabrication of Transparent Conducting Anatase Nb-doped TiO2 Films by Sputtering

  Ngoc Lam Huong Hoang, Naoomi Yamada, Taro Hitosugi, Junpei Kasai, Shoichiro Nakao, Toshihiro Shimada, Tetsuya Hasegawa

  APPLIED PHYSICS EXPRESS 1 (11) 115001  1882-0778 2008/11 [Refereed][Not invited]
   

  We present a low-temperature (similar to 300 degrees C) process for preparing transparent conducting anatase Nb-doped TiO2 (TNO) polycrystalline films by sputtering. We first deposited amorphous films composed of an oxygen-rich bottom layer and oxygen-deficient top layer at room temperature. These films were then crystallized in a reducing atmosphere. The oxygen-rich bottom layer behaved as a seed layer during crystallization of the top layer, resulting in significant improvement of crystallinity and reduction of crystallization temperature. We obtained TNO polycrystalline films showing a resistivity of 6.4 x 10(-4) Omega cm and absorption below 10% in the visible region by post-deposition annealing at 400 degrees C. The developed low-temperature process was applied to fabricating TNO films on plastics and glass with low glass-transition temperature. (C) 2008 The Japan Society of Applied Physics
• Electronic Band Structure of Transparent Conductor: Nb-Doped Anatase TiO2

  Taro Hitosugi, Hideyuki Kamisaka, Koichi Yamashita, Hiroyuki Nogawa, Yutaka Furubayashi, Shoichiro Nakao, Naoomi Yamada, Akira Chikamatsu, Hiroshi Kumigashira, Masaharu Oshima, Yasushi Hirose, Toshihiro Shimada, Tetsuya Hasegawa

  APPLIED PHYSICS EXPRESS 1 (11) 111203  1882-0778 2008/11 [Refereed][Not invited]
   

  We have investigated electronic band structure of a transparent conducting oxide, Nb-doped anatase TiO2 (TNO), by means of first-principles band calculations and photoemission measurements. The band calculations revealed that Nb 4d orbitals are strongly hybridized with Ti 3d ones to form a d-nature conduction band, without impurity states in the in-gap region, resulting in high carrier density exceeding 10(21) cm(-3) and excellent optical transparency in the visible region. Furthermore, we confirmed that the results of valence band and core-level photoemission measurements are consistent with prediction by the present band calculations. (C) 2008 The Japan Society of Applied Physics
• Preparation and application of highly ordered crystalline organic molecular semiconductor thin films

  SHIMADA Toshihiro

  應用物理 応用物理学会 77 (11) 1332 - 1336 0369-8009 2008/11 [Not refereed][Invited]
  
• Structural, electrical and optical propel-ties of sputter-deposited Nb-doped TiO2 (TNO) polycrystalline films

  Naoomi Yamada, Taro Hitosugi, Ngoc Lam Huong Hoang, Yutaka Furubayashi, Yasushi Hirose, Seiji Konuma, Toshihiro Shimada, Tetsuya Hasegawa

  THIN SOLID FILMS 516 (17) 5754 - 5757 0040-6090 2008/07 [Refereed][Not invited]
   

  Transparent conductive oxide (TCO) films of polycrystalline Nb-doped TiO2 (TNO) were fabricated by post-annealing reactively sputtered amorphous films under H-2 atmosphere. Carrier transport properties of the H-2-annealed films were found to be strongly dependent on substrate temperature T-s and oxygen content in sputtering atmosphere. A minimum resistivity (rho) of 9.5 x 10(-4) Omega cm and an average visible transmittance of similar to 75% were obtained at T-s = RT and oxygen content of 10%. This rho value is of the same order as those of epitaxial TNO films, indicating that polycrystalline TNO has sufficient potential as a practical TCO suitable for large-area applications. (C) 2007 Elsevier B.V. All rights reserved.
• Transparent conducting properties of anatase Ti0.94Nb0.06O2 polycrystalline films on glass substrate

  T. Haosugi, A. Ueda, S. Nakao, N. Yamada, Y. Furubayashi, Y. Hirose, S. Konuma, T. Shimada, T. Hasegawa

  THIN SOLID FILMS 516 (17) 5750 - 5753 0040-6090 2008/07 [Refereed][Not invited]
   

  We report on transparent conducting properties of anatase Ti0.94Nb0.06O2 (TNO) polycrystalline films on glass substrate, and discuss the role of grain crystallinity and grain boundary on resistivity. Thin films of TNO were deposited using pulsed laser deposition at substrate temperature ranging from room temperature to 350 degrees C, with subsequent H-2-annealing at 500 degrees C. Polycrystalline TNO films showed resistivity of 4.5 x 10(-4) Omega cm and 1.5 x 10(-3) Omega cm for films prepared at substrate temperature of room temperature and 250 degrees C, respectively. X-ray diffraction measurements and transmission electron microscopy reveal that grain crystallinity and grain boundary play key roles in conductive films. (C) 2007 Elsevier B.V. All rights reserved.
• Structural study of TiO2-based transparent conducting films

  T. Hitosugi, N. Yamada, S. Nakao, K. Hatabayashi, T. Shimada, T. Hasegawa

  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A 26 (4) 1027 - 1029 0734-2101 2008/07 [Refereed][Not invited]
   

  We have investigated microscopic structures of sputter and pulsed laser deposited (PLD) anatase Nb-doped TiO2 transparent conducting films, and discuss what causes the degradation of resistivity in sputter-deposited films. Cross-sectional transmission electron microscope and polarized optical microscope images show inhomogeneous intragrain structures and small grains of similar to 10 mu m in sputter-deposited films. From comparison with PLD films, these results suggest that homogeneous film growth is the important factor to obtain highly conducting sputter-deposited film. (C) 2008 American Vacuum Society.
• Graphoepitaxy of sexithiophene and orientation control by surface treatment

  Susumu Ikeda, Koichiro Saiki, Yasuo Wada, Katsuhiko Inaba, Yoshiyasu Ito, Hirokazu Kikuchi, Kazuo Terashima, Toshihiro Shimada

  JOURNAL OF APPLIED PHYSICS 103 (8) 084313  0021-8979 2008/04 [Refereed][Not invited]
   

  The factors influencing the graphoepitaxy of organic semiconductor alpha-sexithiophene (6T) on thermally oxidized silicon substrates were studied and it was discovered that a wider pitch in the microgrooves decreased the degree of graphoepitaxy. A more significant finding was that in-plane orientation could be changed by simple surface treatment. On UV/ozone-treated substrates (hydrophilic condition), the b-axis of 6T was parallel to the grooves. Further surface treatment with hexamethyl-disiloxane (under hydrophobic conditions) changed this in-plane orientation by 90 degrees. This change is due to the interaction between the topmost chemical species (functional groups) of the groove walls and organic molecules, a behavior peculiar to organic graphoepitaxy and exploitable for optimal orientation control in device processing. The nucleation and growth processes that cause the graphoepitaxy are discussed, based on the experimental results. (C) 2008 American Institute of Physics.
• Epitaxial strain effects in ultrathin films of squaric acid studied by temperature-dependent electron reflectivity

  Toshihiro Shimada, Iwao Sugiura, Koichiro Saiki

  JAPANESE JOURNAL OF APPLIED PHYSICS 47 (2) 1422 - 1425 0021-4922 2008/02 [Refereed][Not invited]
   

  Dielectric phase transition of epitaxial films of antiferroelectric squaric acid (SQ) with nanometer-order thickness was detected from the sample current measurement during reflection high-energy electron diffraction (RHEED) observation. The current changed markedly when the sample temperature was increased continuously. This phenomenon can be explained by considering the energy required to accommodate a charge in a molecule embedded on the surface of a dielectric, which is related to the phase transition in thin films through dielectric relaxation. The onset temperature was dependent on the substrate materials and film thickness, which indicates that the dielectric transition temperature is affected by epitaxial strain effects.
• Magnetotransport properties of Fe/pentacene/Co : TiO2 junctions with Fe top contact electrodes prepared by thermal evaporation and pulsed laser deposition

  Toshihiro Shimada, Hiroyuki Nogawa, Takuya Noguchi, Yutaka Furubayashi, Yukio Yamamoto, Yasushi Hirose, Taro Hitosugi, Tetsuya Hasegawa

  JAPANESE JOURNAL OF APPLIED PHYSICS 47 (2) 1184 - 1187 0021-4922 2008/02 [Refereed][Not invited]
   

  We fabricated heterojunctions using organic semiconductor pentacene sandwiched between two different magnetic electrodes: Co-doped TiO2 (Co:TiO2) and Fe. The conductance of the junctions was measured as a function of magnetic field. We found that the characteristics of the junctions are strongly dependent on the method used to deposit the Fe top electrode on pentacene. The magnetotransport properties can be explained by the effect of the interface morphology and spin polarization of interface traps.
• Femtosecond depolarization dynamics of tris(8-hydroxyquinoline) aluminum films

  N. Ogawa, A. Miyata, H. Tamaru, T. Suzuki, T. Shimada, T. Hasegawa, K. Saiki, K. Miyano

  CHEMICAL PHYSICS LETTERS 450 (4-6) 335 - 339 0009-2614 2008/01 [Refereed][Not invited]
   

  For vapor-deposited tris(8-hydroxyquinoline) aluminum thin films, steady-state and subpicosecond transient optical anisotropy are investigated. It is found that the transient absorption anisotropy decays within tens of picoseconds. With a simple model calculation, the excited state population and anisotropy decay dynamics are disentangled, and the latter signal, the depolarization of the excited state, is explained by the energy transfer between the non-orthogonally-coordinated quinolate ligands. It is also shown that there are two pathways for this fast interligand energy transfer. (c) 2007 Elsevier B.V. All rights reserved.
• Heteroepitaxial growth of ferromagnetic rutile CoxTi1-xO2-delta on GaN(0001)

  Yasushi Hirose, Taro Hitosugi, Junpei Kasai, Yutaka Furubayashi, Kiyomi Nakajima, Toyohiro Chikyow, Seiji Konuma, Toshihiro Shimada, Tetsuya Hasegawa

  APPLIED PHYSICS LETTERS 92 (4) 042503  0003-6951 2008/01 [Refereed][Not invited]
   

  A rutile CoxTi1-xO2-delta (100) film was heteroepitaxially grown on GaN (0001) by pulsed laser deposition. Magneto-optical Kerr effect and cross-sectional transmission electron microscope (TEM) measurements revealed that Co0.03Ti0.97O2-delta films prepared at an oxygen partial pressure of 10(-6)-10(-5) Torr with a carrier density n(e)>= 3x10(18) cm(-3) exhibit room-temperature ferromagnetism without any precipitates or secondary phase. High-resolution TEM observations confirmed that the interface between CoxTi1-xO2-delta and GaN is atomically smooth without intermixing. These results lead us to conclude that CoxTi1-xO2-delta is promising as a spin injector in GaN-based spin-electronic devices. (c) 2008 American Institute of Physics.
• Ferromagnetic rutile CoxTi1-xO2-delta heteroepitaxy on wurtzite GaN and ZnO

  Hirose Yasushi, Hitosugi Taro, Kasai Junpei, Furubayashi Yutaka, Nakajima Kiyomi, Chikyow Toyohiro, Konuma Seiji, Shimada Toshihiro, Hasegawa Tetsuya

  PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9 5 (9) 3104 - + 1862-6351 2008 [Refereed][Not invited]
   

  Rutile CoxTi1-xO2-δ (100) films were heteroepitaxially grown on GaN (0001) and ZnO (0001) by pulsed laser deposition. Magneto-optical Kerr effect measurements indicated that the Co xTi1-xO2-δ films grown at appropriate oxygen partial pressure show room-temperature ferromagnetism both on GaN (0001) and ZnO (0001) substrate. XRD and cross-sectional TEM measurements confirmed solid solution of Co in rutile TiO2 matrix without any precipitates and secondary phases. High-resolution TEM observation of the Co xTi1-xO2-δ/GaN interface revealed atomically smooth interface without intermixing, which promises the application of CoxTi1-xO2-δ in opto-spintronics devices as a spin injector. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.
• Oriented film growth of organic semiconductor sexithiophene on artificial periodic grooves and electrical conduction properties of the films

  S. Ikeda, Y. Wada, K. Inaba, K. Terashima, T. Shimada, K. Saiki

  Materials Research Society Symposium Proceedings 1059 KK11-11  0272-9172 2008 [Refereed][Not invited]
   

  ABSTRACT Film growth of organic semiconductor α-sexithiophene (6T) was studied using substrates with artificial periodic grooves. The grooves were fabricated on thermally oxidized silicon substrates by electron beam lithography. Based on the orientation analysis by atomic force microscopy and grazing-incidence x-ray diffraction, part of the 6T grains grew having the in-plane orientational relationship with the artificial grooves. This phenomenon corresponds to “ggraphoepitaxy” which has been well known in inorganic materials research field. As well as the in-plane preferred orientation, one-dimensional structure consisting of connected 6T grains was observed. The electrical conduction properties of the films were also evaluated.
• Quantitative analysis of thin-film conductivity by scanning microwave microscope

  Sohei Okazaki, Noriaki Okazaki, Yasushi Hirose, Yutaka Furubayashi, Taro Hitosugi, Toshihiro Shimada, Tetsuya Hasegawa

  APPLIED SURFACE SCIENCE 254 (3) 757 - 759 0169-4332 2007/11 [Refereed][Not invited]
   

  We propose a novel method for high-throughput quantitative analysis of thin-film conductivity sigma by using a scanning microwave microscope (S mu M). We demonstrated that composition spread thin films of Ti(1-x)Nb(x)O(2) can be utilized as a standard reference in a wide s range. The shift in Q-value measured by SmM along the composition-spread axis showed a single peak, which moved to the lower x side with film thickness. This behavior was confirmed by electrical field simulation using the finite element method. (C) 2007 Published by Elsevier B.V.
• Anatase phase stability and doping concentration dependent refractivity in codoped transparent conducting TiO2 films

  T. L. Chen, Y. Furubayashi, Y. Hirose, T. Hitosugi, T. Shimada, T. Hasegawa

  JOURNAL OF PHYSICS D-APPLIED PHYSICS 40 (19) 5961 - 5964 0022-3727 2007/10 [Refereed][Not invited]
   

  Nb0.06Sn x Ti0.94-x O-2 ( x <= 0.3) thin films were grown by a pulsed-laser deposition method with varying Sn concentration. Through a combinatorial technique, we find that Sn concentration can reach a maximum of about x = 0.3 while maintaining the stable anatase phase and epitaxy. A doping concentration dependence of the refractivity is revealed, in which refractivity reduction at a wavelength of. = 500 nm is estimated to be 12.4% for Nb0.06Sn0.3Ti0.64O2 thin film. Sn doping induced band-gap blue shift can be contributed to the mixing of extended Sn 5s orbitals with the conduction band of TiO2. Low resistivity on the order of 10(-4) Omega cm at room temperature and high internal transmittance of more than 95% in the visible light region are exhibited for Nb0.06Sn x Ti0.94-x O2 thin films ( x <= 0.2). Optical and transport analyses demonstrate that doping Sn into Nb0.06Ti0.94O2 can reduce the refractivity while maintaining low resistivity and high transparency.
• Correlation between gap states and off-current in pentacene field-effect transistors observed by sub-band-gap photocurrent-voltage measurement

  Manabu Ohtomo, Toshihiro Shimada, Tetsuya Hasegawa

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 46 (33-35) L817 - L819 0021-4922 2007/09 [Refereed][Not invited]
   

  We report the correlation between sub-band-gap photocurrent and various device parameters of polycrystalline pentacene field-effect transistors. It was revealed that we can estimate various device characteristics including the origin of photocarriers and the density of gap states by changing the gate bias and drain voltage during the photocurrent measurement. In our experiment, carrier mobility was not related to photocurrent in the sub-band-gap region, even though a large photocurrent implies a large number of trapping states. The off-current obviously correlates with the photocurrent, suggesting that the origin of the off-currents is the gap states widely distributed near the valence band edge.
• Metal-induced Urbach tail at the gold/pentacene interface of top-contact organic field effect transistors

  Manabu Ohtomo, Toshihiro Shimada, Koichiro Saiki, Tetsuya Hasegawa

  JOURNAL OF APPLIED PHYSICS 102 (6) 064510  0021-8979 2007/09 [Refereed][Not invited]
   

  We investigated the photocurrent-voltage characteristics of pentacene field effect transistors in order to study the gap state distribution and carrier generation mechanism. In top-contact devices, the photocurrent spectrum versus photon energy exhibited the typical Urbach tail, while such a tail was not observed in bottom-contact devices. The formation of this Urbach tail can be explained by assuming that diffused gold nanoparticles at the gold/pentacene interface cause microfields and stabilize the excitons. This mechanism also provides an explanation for the reduced barrier height and Ohmic contact formation at "dirty" interfaces fabricated by metal deposition.
• Fabrication of low resistivity Nb-doped TiO2 transparent conductive polycrystalline films on glass by reactive sputtering

  Naoomi Yamada, Taro Hitosugi, Ngoc Lam Huong Hoang, Yutaka Furubayashi, Yasushi Hirose, Toshihiro Shimada, Tetsuya Hasegawa

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 46 (8A) 5275 - 5277 0021-4922 2007/08 [Refereed][Not invited]
   

  Nb-doped anatase TiO2 (TNO) polycrystalline films with excellent conductivity and transparency were successfully fabricated by reactive sputtering combined with post annealing in H-2 gas. The H-2 annealing of as-deposited amorphous films caused an abrupt decrease in resistivity (p), which was accompanied by crystallization into the anatase structure. A film deposited on an unheated glass substrate with subsequent H2 annealing at 600 degrees C exhibited a resistivity of 9.5 x 10(-4) Omega cm and an average optical transmittance of similar to 75% in the visible region. This p value is of the same order as that of epitaxial TNO films, which indicates that sputtering is a promising technique for obtaining large-area TNO films.
• Analysis of charge transport in a polycrystalline pentacene thin film transistor by temperature and gate bias dependent mobility and conductance

  Dong Guo, Tetsuhiko Miyadera, Susumu Ikeda, Toshihiro Shimada, Koichiro Saiki

  JOURNAL OF APPLIED PHYSICS 102 (2) 023706  0021-8979 2007/07 [Refereed][Not invited]
   

  The gate bias and temperature dependent field-effect mobility and conductance of a polycrystalline pentacene thin film transistor (TFT) were analyzed to study the charge transport in the material. Since both heating and cooling can obviously change the film morphology, a relatively narrow temperature range was adopted to rule out the possible influence of structure variation on the device characterization. Both mobility and conductance values increased with the gate bias and showed a thermally activated Arrhenius-like behavior, while the threshold voltage deceased with temperature. Several models were compared, and it was found that the observations could only be well interpreted by a multiple trapping model, which suggests that the temperature and gate bias dependences should be attributed to the increased free charge carrier density. The density of trap states in the band gap was evaluated by the field-effect mobility as well as the field-effect conductance data. The results disclose a possible field-effect mobility much higher than the present record in a polycrystalline pentacene TFT. (C) 2007 American Institute of Physics.
• Wetting-dewetting oscillations of liquid films during solution-mediated vacuum deposition of rubrene

  Yui Ishii, Toshihiro Shimada, Noriaki Okazaki, Tetsuya Hasegawa

  LANGMUIR 23 (12) 6864 - 6868 0743-7463 2007/06 [Refereed][Not invited]
   

  We found a novel oscillating phenomenon associated with surface wetting during the vacuum deposition of an organic semiconductor (rubrene) on a liquid film (bis(2-ethylhexyl)sebacate, B2EHS). In-situ observations by an optical microscope revealed that the oscillation was associated with the growth of the rubrene crystals. The oscillation frequency was proportional to the evaporation rate of rubrene. On the basis of the contact angle measurements, it was concluded that the oscillation is probably due to the change in the contact angle of the liquid caused by the formation of ultrathin rubrene films on the liquid surface.
• Wetting-dewetting oscillations of liquid films during solution-mediated vacuum deposition of rubrene

  Yui Ishii, Toshihiro Shimada, Noriaki Okazaki, Tetsuya Hasegawa

  LANGMUIR 23 (12) 6864 - 6868 0743-7463 2007/06 [Refereed][Not invited]
   

  We found a novel oscillating phenomenon associated with surface wetting during the vacuum deposition of an organic semiconductor (rubrene) on a liquid film (bis(2-ethylhexyl)sebacate, B2EHS). In-situ observations by an optical microscope revealed that the oscillation was associated with the growth of the rubrene crystals. The oscillation frequency was proportional to the evaporation rate of rubrene. On the basis of the contact angle measurements, it was concluded that the oscillation is probably due to the change in the contact angle of the liquid caused by the formation of ultrathin rubrene films on the liquid surface.
• Visualization of induced charge in an organic thin-film transistor by cross-sectional potential mapping

  S Ikeda, T Shimada, T Kiguchi, M, Saiki, K

  J. Appl. Phys. American Institute of Physics 101 (9) 094509 - 94509 0021-8979 2007/05 [Refereed][Not invited]
   

  Kelvin probe force microscopy was applied to the cross-sectional potential imaging of a working organic thin-film transistor (OTFT). The bottom-contact-type OTFT with an active layer of copper-phthalocyanine (CuPc) was cleaved and internal potential distribution of its channel region was visualized. The potential distribution on the cross section changed depending on the applied drain and gate voltage. Horizontal potential distribution in the semiconductor film from source to drain direction was roughly consistent with the results of surface potential imaging previously reported. Vertical potential distribution from bottom (gate) to top (CuPc film) showed that a potential peak appeared along the semiconductor/insulator interface when a negative voltage was applied to the gate. The charge injection process is discussed based on the visualized potential peak at the interface. ©2007 American Institute of Physics
• Transport properties of d-electron-based transparent conducting oxide: Anatase Ti1-xNbxO2

  Yutaka Furubayashi, Naoomi Yamada, Yasushi Hirose, Yukio Yamamoto, Makoto Otani, Taro Hitosugi, Toshihiro Shimada, Tetsuya Hasegawa

  JOURNAL OF APPLIED PHYSICS 101 (9) 093705  0021-8979 2007/05 [Refereed][Not invited]
   

  The transport properties of a d-electron-based transparent conducting oxide, Nb-doped anatase Ti1-xNbxO2, were investigated as a function of the Nb content x. From optical resistivity spectra, the static effective mass was evaluated to be similar to 0.4m(0) in the low-carrier-concentration (n(e)) regime, which is approximately the same as those of conventional transparent conducting oxides (TCOs), and two orders of magnitude smaller than that reported for rutile TiO2. The Hall mobility at room temperature, which is maximized at around x=0.01 (n(e)similar to 10(21) cm(-3)), was found to be mainly dominated by optical phonon scattering unlike that of other TCOs. (c) 2007 American Institute of Physics.
• Fabrication of highly conductive Ti1-xNbxO2 polycrystalline films on glass substrates via crystallization of amorphous phase grown by pulsed laser deposition

  T. Hitosugi, A. Ueda, S. Nakao, N. Yamada, Y. Furubayashi, Y. Hirose, T. Shimada, T. Hasegawa

  APPLIED PHYSICS LETTERS 90 (21) 212106  0003-6951 2007/05 [Refereed][Not invited]
   

  Nb-doped anatase TiO2 [Ti0.94Nb0.06O2 (TNO)] films with high electrical conductivity and transparency were fabricated on nonalkali glass using pulsed laser deposition and subsequent annealing in a H-2 atmosphere. The amorphous films as deposited on unheated substrates were found to crystallize, forming polycrystalline films at around 350 degrees C. The films annealed at 500 degrees C showed resistivity down to 4.6x10(-4) Omega cm at room temperature and optical transmittance of 60%-80% in the visible region, which are comparable to those of epitaxial films. These results indicate that TNO films have the potential to be practical transparent conducting oxides that could replace indium tin oxide. (c) 2007 American Institute of Physics.
• Electron energy loss spectroscopy of ultrathin pentacene field effect transistors

  Toshihiro Shimada, Koichiro Saiki

  JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA 154 (3) 119 - 122 0368-2048 2007/02 [Refereed][Not invited]
   

  Electron energy loss spectra of ultrathin pentacene field effect transistors were measured by applying gate bias voltages. Tailing and shouldering of the primary peak on the energy loss side was observed for 1.5 nm thick films when a negative gate bias was applied. The energy loss spectra obtained from the deconvolution of the primary electron profile showed peaks, and the peak energies increased as a function of the gate bias voltage. This is consistent with the behavior of two-dimensional plasmons of field-induced carriers. The thickness dependence is explained by the thickness of the accumulation layer and the probing depth of the spectroscopy. (c) 2007 Elsevier B.V. All rights reserved.
• Fabrication of TiO2-based transparent conducting oxide films on glass by pulsed laser deposition

  Taro Hitosugi, Atsuki Ueda, Yutaka Furubayashi, Yasushi Hirose, Seiji Konuma, Toshihiro Shimada, Tetsuya Hasegawa

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 46 (1-3) L86 - L88 0021-4922 2007/01 [Refereed][Not invited]
   

  Nb-doped anatase TiO2 (Ti0.94Nb0.06O2) films with excellent conductivity and transparency were deposited on non-alkali glass by pulsed laser deposition. X-ray diffraction analysis and transmission electron microscopy confirmed that the obtained films were polycrystalline with anatase structure. The films deposited at a substrate temperature of 250 degrees C with subsequent H-2 annealing at 500 degrees C showed a resistivity of 1.5 x 10(-3) Omega(.)cm at room temperature and an optical transmittance of 60-80% in the visible region. These results indicate that anatase Ti0.94Nb0.06O2 has great potential as a transparent conducting oxide that could replace Sn-doped In2O3 (ITO).
• Orientation control of standing epitaxial pentacene monolayers using surface steps and in-plane band dispersion analysis by angle resolved photoelectron spectroscopy

  T. Suzuki, T. Shimada, K. Ueno, S. Ikeda, K. Saiki, T. Hasegawa

  Materials Research Society Symposium Proceedings 965 0965-S06-19  0272-9172 2007 [Refereed][Not invited]
   

  ABSTRACT We prepared quasi single crystalline pentacene monolayer films on Bi-terminated Si(111) by using bunched steps on vicinally-cut surfaces as an orientation template. Band dispersion in the conduction plane of pentacene was clearly observed by angle-resolved photoelectron spectroscopy.
• Post-processing of spin-coated organic thin films in solvent vapors: Vapor pressure monitoring by infrared absorption and the effect of electric fields

  Toshihiro Shimada

  THIN SOLID FILMS 515 (4) 1568 - 1572 0040-6090 2006/12 [Refereed][Not invited]
   

  We have examined the effect of the post-processing of spin-coated tetracene and DAST (4'-dimethylamino-N-methyl-4-stilbazolium tosylate) films in their solvent vapor to examine the possibility of precisely controlling the vapor pressure and studying the effect of applying electric fields to their structural properties. It was demonstrated that the solvent concentration in the vapor phase can be monitored by infrared spectroscopy. The thickness uniformity of the tetracene films was improved by the formation of a mixture of the tetracene crystals with the saturated solution ("solution ultrathin film") on the surface. Crystals with an ordered orientation were obtained by additionally applying an electric field during the vapor exposure of the DAST. The present technique for monitoring the solvent vapor pressure is also applicable for controlling the drying speed during the inkjet printing of functional organic materials. (c) 2006 Elsevier B.V. All rights reserved.
• Pulsed molecular beam scattering of a planar-shaped organic molecule on regularly stepped surfaces of hydrogen-terminated Si(111)

  Toshihiro Shimada, Hisashi Ichikawa, Koichiro Saiki

  APPLIED PHYSICS LETTERS 89 (14) 141902  0003-6951 2006/10 [Refereed][Not invited]
   

  Strong dependence of surface residence time of a planar organic molecule (hydrogen phthalocyanine) on vicinal surfaces of hydrogen-terminated Si(111) was observed in pulsed molecular beam scattering experiments. These results can be explained by the difference in the microscopic contact area of the molecules on the surface, which determines the binding force between the migrating molecules and the surface. The relationship between the observed behavior and the organic thin film growth is discussed. (c) 2006 American Institute of Physics.
• Interaction between surface migrating pentacene molecules and chemically modified surfaces of silicon oxides studied by pulsed molecular beam scattering

  H. Ichikawa, A. Koma, K. Saiki, T. Shimada

  SURFACE SCIENCE 600 (17) L236 - L239 0039-6028 2006/09 [Refereed][Not invited]
   

  The interaction between pentacene molecules and organic self-assembling monolayers formed on silicon oxides (SiO2) was studied by measuring the surface scattering time profile of the pulsed molecular beam of pentacene. It was found that the surface residence time (SRT) of pentacene was significantly reduced on a surface treated with hexamethyl silazarane (HMDS) compared with that on a bare SiO2 surface. The activation energies derived from the temperature dependence of the SRT were 24 kJ/mol and 100 kJ/mol for HMDS-SiO2 and the bare SiO2, respectively. A surface treated with octadecyltrichlorosilane (OTS) showed SRT values almost the same as those on the bare SiO2 surface, which was due to exposed SiO2 regions on the thermally-degraded OTS-SiO2. The growth mechanism with improved quality is due to the shallower adsorption potential and enhanced migration of pentacene by the surface alkylation. (c) 2006 Elsevier B.V. All rights reserved.
• Graphoepitaxy of sexithiophene on thermally oxidized silicon surface with artificial periodic grooves

  Susumu Ikeda, Koichiro Saiki, Ken Tsutsui, Tomohiko Edura, Yasuo Wada, Hiroyuki Miyazoe, Kazuo Terashima, Katsuhiko Inaba, Toru Mitsunaga, Toshihiro Shimada

  APPLIED PHYSICS LETTERS 88 (25) 251905  0003-6951 2006/06 [Refereed][Not invited]
   

  Graphoepitaxial growth of a sexithiophene (6T) thin film was achieved on a thermally oxidized silicon surface with artificial periodic grooves. The surface structure was fabricated by electron beam lithography and the thin film was grown by molecular beam deposition. A well-pronounced, in-plane oriented component ([010](6T)parallel to grooves) was identified by grazing incidence x-ray diffraction, though there also existed some randomly oriented 6T grains. Presence of the graphoepitaxial component was also confirmed by results of the orientational analysis of atomic force microscopy images. It was shown that the in-plane orientation control of organic semiconductors is possible using graphoepitaxy. (c) 2006 American Institute of Physics.
• Intrinsic Faraday spectra of ferromagnetic rutile Ti1-xCoxO2-delta

  Yasushi Hirose, Taro Hitosugi, Yutaka Furubayashi, Go Kinoda, Kazuhisa Inaba, Toshihiro Shimada, Tetsuya Hasegawa

  APPLIED PHYSICS LETTERS 88 (25) 252508  0003-6951 2006/06 [Refereed][Not invited]
   

  We have investigated the Faraday spectra of ferromagnetic rutile Ti1-xCoxO2-delta films grown on Al2O3 (0001). The Faraday spectra strongly depended on the film thickness, revealing the significant effect of the multiple reflections of light. The intrinsic Faraday spectra of rutile Ti1-xCoxO2-delta were corrected for this multiple reflection effect on the basis of an optical model and compared with the absorption spectra in detail. The quantitatively good correspondence between intrinsic Faraday ellipticity and optical band edge strongly suggests that rutile Ti1-xCoxO2-delta is an intrinsic ferromagnetic semiconductor. The exchange parameters, N-0 alpha and N-0 beta, were estimated as the order of similar to 0.1 eV. (c) 2006 American Institute of Physics.
• Enhancement of magneto-optical properties of anatase Co : TiO2 Co-doped with Nb

  G Kinoda, T Hitosugi, Y Yamamoto, Y Furubayashi, K Inaba, Y Hirose, T Shimada, T Hasegawa

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 45 (12-16) L387 - L389 0021-4922 2006/04 [Refereed][Not invited]
   

  We have fabricated Ti0.95-xNbxCo0.05O2 thin films by the pulsed laser deposition technique. Carrier density was found to be almost identical to the Nb concentration up to x = 0.06, indicating that doped Nb atoms generate carriers with > 80% efficiency. In this doping range, magneto-optical properties were significantly enhanced by Nb-doping. The remanent Faraday rotation at a wavelength of 405 nm was as high as 5.6 x 10(3) deg/cm, which is approximately one order of magnitude higher than that of a film free of Nb-doping. The present results support the hypothesis that conduction electrons play an essential role in the ferromagnetism of Co-doped TiO2.
• Carrier induced ferromagnetism in Nb doped Co : TiO2 and Fe : TiO2 epitaxial thin film

  T Hitosugi, G Kinoda, Y Yamamoto, Y Furubayashi, K Inaba, Y Hirose, K Nakajima, T Chikyow, T Shimada, T Hasegawa

  JOURNAL OF APPLIED PHYSICS 99 (8) 08M121  0021-8979 2006/04 [Refereed][Not invited]
   

  We have investigated the carrier induced magnetic properties of anatase Ti1-x-yNbxMyO2 (M=Co,Fe) epitaxial films grown by the pulsed laser deposition technique. For Ti0.95-xNbxCo0.05O2, the n-type carrier density could be controlled in a wide range (4.9x10(17) cm(-3) to 2.7x10(21) cm(-3)) by Nb doping (x=0-0.2). The temperature dependence of the resistivity showed metallic behavior, suggesting that Ti0.95-xNbxCo0.05O2 undergoes a semiconductor to metal transition along with a slight carrier doping less than x < 0.03. In both Co-doped and Fe-doped films, we have confirmed hysteresis in M-H curves, and the anomalous Hall effect at room temperature. This strongly suggests that the charge carriers are spin polarized and mediate ferromagnetic interaction between local spins on transition metal ions. In the case of Ti0.94-xNbxFe0.06O2, ferromagnetism is sensitive to carrier concentration. That is, the x=0.002 film is nonmagnetic even at 3 K, while room-temperature ferromagnetism appears at x=0.01. (C) 2006 American Institute of Physics.
• Novel transparent conducting oxide: Anatase Ti1-xNbxO2

  Y Furubayashi, T Hitosugi, Y Yamamoto, Y Hirose, G Kinoda, K Inaba, T Shimada, T Hasegawa

  THIN SOLID FILMS 496 (1) 157 - 159 0040-6090 2006/02 [Refereed][Not invited]
   

  Single-crystalline Ti1-xNbxO2 (x = 0.2) films of 40 nm thickness were deposited on SrTiO3 (100) substrates by the pulsed laser deposition (PLD) technique. X-ray diffraction measurement confirmed epitaxial growth of anatase (001) film. The resistivity of Ti1-xNbxO2 films with x >= 0.03 is 2-3 x 10(-4) Omega cm at room temperature. The carrier density of Ti1-xNbxO2, which is almost proportional to the Nb concentration, can be controlled in a range of 1 x 10(19) to 2 x 10(21) cm(-3). Optical measurements revealed that internal transmittance in the visible and near-infrared region for films with x <= 0.03 was more than 97%. These results demonstrate that the presently developed anatase Ti1-xNxO2 is one of the promising candidates for the practical TCOs. (c) 2005 Elsevier B.V. All rights reserved.
• Magnetic properties of rutile Ti1-xFexO2 epitaxial thin films

  K Inaba, T Hitosugi, Y Hirose, Y Furubayashi, G Kinoda, Y Yamamoto, TW Kim, H Fujioka, T Shimada, T Hasegawa

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 45 (4-7) L114 - L116 0021-4922 2006/02 [Refereed][Not invited]
   

  Growth conditions for pulsed laser deposition of ferromagnetic Ti1-xFexO2 films with the rutile structure have been optimized on the basis of magnetooptical Kerr effect (MOKE) measurements. Thus, it was found that Ti0.94Fe0.06O2 films prepared under very limited growth conditions, at a substrate temperature of 650-675 degrees C and an oxygen pressure of similar to 1 x 10(-6) Torr, show ferromagnetism at room temperature. The optimized films revealed a saturation magnetization of 1.3 mu(B) and a coercive field of 0.14 kOe. From XPS measurements, the valence state of Fe was determined to be 3+, ruling out the possibility that ferromagnetism may arise from Fe3O4 nanoparticles.
• Development of high-throughput combinatorial terahertz time-domain spectrometer and its application to ternary composition-spread film

  M. Ohtani, T. Hitosugi, Y. Hirose, J. Nishimura, A. Ohtomo, M. Kawasaki, R. Inoue, M. Tonouchi, T. Shimada, T. Hasegawa

  Applied Surface Science 252 (7) 2622 - 2627 0169-4332 2006/01/21 [Refereed][Not invited]
   

  We have developed a high-throughput combinatorial terahertz (THz) time-domain spectrometer (CTTDS) and applied to a ternary composition-spread film. This technique has possibilities to reveal a variety of physical properties such as complex refractive index, complex dielectric constant, and complex electrical conductivity. Further, this method is a non-contact and non-destructive way to map those physical properties. The demonstration of THz transmittance mapping of ternary composition-spread film, with a spatial resolution of 1 mm, reveals metallic behavior in specific range of film compositions. This prospective technique may serve as a convenient tool for the high-throughput, non-contact, non-destructive, and spatially resolved characterization suited for combinatorial composition-spread films. © 2005 Elsevier B.V. All rights reserved.
• Thickness dependent characteristics of a copper phthalocyanine thin-film transistor investigated by in situ FET measurement system

  Ikeda, S Yamakawa, H Kiguchi, M Nakayama, M Saiki, T Shimada, T Miyadera, T Tsutsui, K, Wada, Y

  MOLECULAR CRYSTALS AND LIQUID CRYSTALS 455 347 - 351 1058-725X 2006 [Refereed][Not invited]
  
• Electron spectroscopy of dye-sensitized anatase(001) surfaces under illumination

  T Shimada, T Kaji, T, Saiki, K

  MOLECULAR CRYSTALS AND LIQUID CRYSTALS 455 317 - 325 1058-725X 2006 [Refereed][Not invited]
  
• Development of UHV-LT MFM operating in magnetic field

  Hidetaka Sugaya, Taro Hitosugi, Toshihiro Shimada, Toshihiko Nagamura, Yuji Matsumoto, Tetsuya Hasegawa

  AIP Conference Proceedings 850 1667 - 1668 0094-243X 2006 [Refereed][Not invited]
   

  We have developed an ultrahigh-vacuum low-temperature magnetic force microscope (UHV-LT MFM) which can operate in magnetic fields. The microscope is based on a non-contact atomic force microscope using a piezoelectric cantilever. Measurements of hard disc media confirmed spatial resolution of ∼50 nm even at low temperatures down to 10 K. The maximum scanning area is as wide as 2.5 μm × 2.5 μm at 10 K and 7.5 μm × 7.5 μm at room temperature. We have also equipped the microscope with an electromagnet in order to apply external magnetic fields up to 0.25 T in the horizontal direction. The MFM head is mounted on a piezo-driven rotation stage, so that the direction of magnetic field relative to the sample surface can be set arbitrarily. © 2006 American Institute of Physics.
• 30aUE-7 Cryogenic STM/STS observations of Bi2212 single crystals under magnetic field III

  Fukuo N., Mashima H., Hitosugi T., Shimada T., Uchida T., Shimoyama J., Kishio K., Matsumoto Y., Hasegawa T.

  Meeting Abstracts of the Physical Society of Japan 一般社団法人 日本物理学会 61 (0) 648 - 648 1342-8349 2006 [Refereed][Not invited]
  
• 24aPS-84 Cryogenic STM/STS observations of Bi2212 single crystals under magnetic field IV

  Fukuo N., Hitosugi T., Shimada T., Uchida S., Shimoyama J., Kishio K., Matsumoto Y., Hasegawa T.

  Meeting Abstracts of the Physical Society of Japan 一般社団法人 日本物理学会 61 (0) 459 - 459 1342-8349 2006 [Refereed][Not invited]
  
• Electron spectroscopy of dye-sensitized anatase(001) surfaces under illumination

  Toshihiro Shimada, Toshihiko Kaji, Koichiro Saiki

  MOLECULAR CRYSTALS AND LIQUID CRYSTALS 455 317 - 325 1542-1406 2006 [Refereed][Not invited]
   

  Dye-sensitized anatase TiO2 (001) surface was prepared in the solution directly connected with an ultrahigh vacuum analysis chamber. We measured the ultraviolet photoelectron spectroscopy (UPS) and low energy electron transmission (LEET) of the dye-sensitized surfaces with and without illumination. The highest occupied molecular orbital (HOMO) and other levels showed different peak shifts in UPS when illuminated. The observations were discussed in relation to the device characteristics of a half photocell.
• Thickness dependent characteristics of a copper phthalocyanine thin-film transistor investigated by in situ FET measurement system

  Susumu Ikeda, Hidemitsu Yamakawa, Manabu Kiguchi, Manabu Nakayama, Koichiro Saiki, Toshihiro Shimada, Tetsuhiko Miyadera, Ken Tsutsui, Yasuo Wada

  MOLECULAR CRYSTALS AND LIQUID CRYSTALS 455 347 - 351 1542-1406 2006 [Refereed][Not invited]
   

  The influence of active layer thickness on transport characteristics of a copper phthalocyanine thin-film transistor was investigated by using the in situ FET measurement system with the film deposition continued up to several hundred nm in thickness. The drain current and mobility showed maximum values in the early stage of film growth and then decreased with the increasing film thickness. This result suggests that the over-grown layer affects the transport characteristics of the conductive accumulation layer, for example, owing to change of the electric field in the device.
• Correlation between vortex distribution and electronic inhomogeneity in Bi2Sr2CaCu2O8+delta as probed by STM/STS

  Fukuo Noritaka, Mashima Hideki, Kinoda Go, Hitosugi Taro, Shimada Toshihiro, Shimizu Keisuke, Shimoyama Jun-ichi, Kishio Kohji, Matsumoto Yuji, Hasegawa Tetsuya

  LOW TEMPERATURE PHYSICS, PTS A AND B 850 797 - + 0094-243X 2006 [Refereed][Not invited]
  
• Scanning tunneling microscopy/spectroscopy of heavily overdoped Bi2Sr2CuOy single crystals

  Hideki Mashima, Noritaka Fukuo, Go Kinoda, Taro Hitosugi, Toshihiro Shimada, Takeshi Kondo, Yoshinori Okada, Hiroshi Ikuta, Yuji Matsumoto, Tetsuya Hasegawa

  LOW TEMPERATURE PHYSICS, PTS A AND B 850 509 - + 0094-243X 2006 [Refereed][Not invited]
   

  We have carried out scanning tunneling microscopy/spectroscopy (STM/STS) of heavily overdoped Bi2Sr2CuOy single crystals with T-c < 2 K. STS spectra showed a pseudogap structure with dull coherence peaks. Furthermore, we found that the magnitude of pseudogap is spatially non-uniform in a nm scale and varies from 10 to 30 meV. This supports a scenario that the electronic inhomogeneity is a consequence of randomly distributed Coulomb potential in the CuO2 layers induced by disorder of excess oxygen in the BiO layers.
• The Effect of Photoexcitation during the Epitaxial Thin Film Growth of Organic Molecular Materials(Organic Crystals)

  Shimada Toshihiro

  Journal of the Japanese Association of Crystal Growth 日本結晶成長学会 32 (5) 347 - 352 0385-6275 2005/12/31 [Not refereed][Not invited]
   

  Crystalline thin films of small organic molecules are actively studied for the application in transistors. Various techniques have been persued to improve the ordering and the crystallinity of microcrystals. We here report our approach to electronically excite the molecules and growing thin films by photo irradiation. One example is C_<60> grown on MoS_2 (0001) and another is the Alq3 grown on KCl (001). In the case of C_<60> which is known to photopolymerize, nucleation density is increased with threshold as a function of photo intensity, and the second layer is grown at the edge of the fi...
• Bulk-like pentacene epitaxial films on hydrogen-terminated Si(111)

  T Shimada, H Nogawa, T Hasegawa, R Okada, H Ichikawa, K Ueno, K Saiki

  APPLIED PHYSICS LETTERS 87 (6) 061917  0003-6951 2005/08 [Refereed][Not invited]
   

  The epitaxial growth of pentacene on hydrogen-terminated Si(111) is reported. Reflection high energy electron diffraction (RHEED) revealed that the crystal packing resembles that in the bulk crystal even at a monolayer thickness, which was maintained in multilayers. A ripening effect was clearly observed by atomic force microscopy (AFM). These results are important to obtain oriented crystalline films of pentacene combined with silicon microdevices with reduced defect densities. (c) 2005 American Institute of Physics.
• Electron spectroscopy of organic thin-film FETs

  Toshihiro Shimada

  Electrical Engineering in Japan (English translation of Denki Gakkai Ronbunshi) 152 (1) 31 - 36 0424-7760 2005/07/15 [Refereed][Not invited]
   

  Organic thin-film FETs have been studied by using electron spectroscopic techniques. Ultraviolet photoelectron spectroscopy has revealed that photopolymerization is enhanced by fabricating FET structure. Energy levels and the effective mass of charge carriers are discussed based on the results of photoelectron spectroscopy and electron energy loss spectroscopy. © 2005 Wiley Periodicals, Inc.
• Elementary Processes of Organic Thin Film Growth Studied by Modulated Molecular Beam Experiments

  SHIMADA Toshihiro

  Journal of the Surface Science Society of Japan 日本表面科学会 26 (7) 410 - 414 0388-5321 2005/07/10 [Not refereed][Not invited]
   

  Interaction between molecules and surfaces and nucleation processes during organic thin film growth have been studied by modulated molecular beam experiments. After a brief introduction of the background and the experimental technique, we describe the results of our study on the interaction between pentacene and chemically modified SiO₂ surfaces. Molecular migration on regularlly-stepped vicinal surfaces of silicon and crystal nucleation controlled by pulsed supply of the molecules are discussed on the basis of the experimental data on phthalocyanine and quinacridone.
• A transparent metal: Nb-doped anatase TiO2

  Y Furubayashi, T Hitosugi, Y Yamamoto, K Inaba, G Kinoda, Y Hirose, T Shimada, T Hasegawa

  APPLIED PHYSICS LETTERS 86 (25) 252101  0003-6951 2005/06 [Refereed][Not invited]
   

  This Letter focuses on the discovery of a transparent conducting oxide (TCO), anatase Ti1-xNbxO2 films with x=0.002-0.2. The resistivity of films with x >= 0.03 is 2-3x10(-4) Omega cm at room temperature. The carrier density of Ti1-xNbxO2 can be controlled in a range of 1x10(19) to 2x10(21) cm(-3). The internal transmittance for films with x <= 0.03 (40 nm thickness) is about 97% in the visible light region. The transport and optical parameters are comparable to those of typical TCOs, such as In2-xSnxO3 and ZnO. (c) 2005 American Institute of Physics.
• Electric-field-induced charge injection or exhaustion in organic thin film transistor

  M Kiguchi, M Nakayama, T Shimada, K Saiki

  PHYSICAL REVIEW B 71 (3) 035332  1098-0121 2005/01 [Refereed][Not invited]
   

  The conductivity of organic semiconductors is measured in situ and continuously with a bottom contact configuration, as a function of film thickness at various gate voltages. The depletion layer thickness can be directly determined as a shift of the threshold thickness at which electric current began to flow. The in situ and continuous measurement can also determine qualitatively the accumulation layer thickness together with the distribution function of injected carriers. The accumulation layer thickness is a few monolayers and it does not depend on gate voltages. Rather it depends on the chemical species.
• Uniaxial alignment of Alq(3) by laser-assisted molecular beam epitaxy

  H Ichikawa, K Saiki, T Suzuki, T Hasegawa, T Shimada

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 44 (46-49) L1469 - L1471 0021-4922 2005 [Refereed][Not invited]
   

  The surface morphology of tris(8-hydroxyquinoline)aluminum (III) (Alq(3)) epitaxially grown on KCl(001) was drastically changed by a simultaneous blue laser irradiation during vacuum deposition. Needle-shaped microcrystals were aligned to the polarization direction of the laser, Parallel to the KCl[010] axis. The origin of alignment was discussed in comparison with the growth of non-polar organic molecular films, in which anisotropic heating played an important role.
• Heteroepitaxial growth of rutile TiO2 on GaN(0001) by pulsed laser deposition

  T Hitosugi, Y Hirose, J Kasai, Y Furubayashi, M Ohtani, K Nakajima, T Chikyow, T Shimada, T Hasegawa

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 44 (50-52) L1503 - L1505 0021-4922 2005 [Refereed][Not invited]
   

  Rutile TiO2(100) thin films have been grown on GaN(0001) surfaces by using the pulsed laser deposition method. Reflection high-energy electron diffraction (RHEED) measurements during the deposition clearly revealed the layer-by-layer growth of TiO2 at a substrate temperature of 400 C under an oxygen pressure of 1 x 10(-5) Torr. X-ray diffraction and atomic force microscopy confirmed that the obtained films have high crystallinity with atomically flat surfaces. Pole figure measurements revealed the epitaxial relationship between TiO2 and GaN, namely that the in-plane TiO2< 010 > axis aligns parallel to the GaN < 10 (1) over bar0 >.
• Ta-doped anatase TiO2 epitaxial film as transparent conducting oxide

  T Hitosugi, Y Furubayashi, A Ueda, K Itabashi, K Inaba, Y Hirose, G Kinoda, Y Yamamoto, T Shimada, T Hasegawa

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 44 (33-36) L1063 - L1065 0021-4922 2005 [Refereed][Not invited]
   

  We present electrical transport and optical properties of Ta-doped TiO2 epitaxial thin films with varying Ta concentration grown by the pulsed laser deposition method. The Ti0.95Ta0.05O2 film exhibited a resistivity of 2.5 x 10(-4) Omega cm at room temperature, and an internal transmittance of 95% in the visible light region. These values are comparable to those of a Widely used transparent conducting oxide (TCO), indium tin oxide. Furthermore, this new material falls into a new category of TCOs that utilizes d electrons.
• 24pWA-3 Cryogenic STM/STS observations of Bi-2212 single crystals under the field

  Fukuo N, Hasegawa T, Mashima H., Kinoda G, Hitosugi T, Shimada T, Shimizu K., Shimoyama J, Kishio K., Matsumoto Y

  Meeting Abstracts of the Physical Society of Japan 一般社団法人 日本物理学会 60 (0) 498 - 498 1342-8349 2005 [Refereed][Not invited]
  
• 19aYH-6 Cryogenic STM/STS observations of Bi2212 single crystals under magnetic filedl II

  Fukuo N., Mahisma H., Hitosugi T., Shimada T., Uchida T., Shimoyama J., Kishio K., Matsumoto Y., Hasegawa T.

  Meeting Abstracts of the Physical Society of Japan 一般社団法人 日本物理学会 60 (0) 365 - 365 1342-8349 2005 [Refereed][Not invited]
  
• Photoinduced change in the Raman spectrum of buckyferrocene ((Fe(C-60(CH3)(5))C5H5)

  T Shimada, Y Yamamoto, T Kaji, K Itaka, H Koinuma, Y Kuninobu, Y Matsuo, E Nakamura, K Saiki

  SOLID STATE COMMUNICATIONS 132 (3-4) 197 - 201 0038-1098 2004/10 [Refereed][Not invited]
   

  The Raman spectrum of buckyferrocene (Fe(C-60(CH3)(5))C5H5) changes during laser irradiation at 532 nm. A peak at 1465 cm(-1) decreases and a new peak at 1452 cm(-1) emerges, which resembles the change in the 'pentagonal pinch mode' during the photopolymerization of C-60- Photoinduced polymerization is strongly suggested because fragments from the buckyferrocene dimers are observed during the mass spectroscopy of laser desorbed solid samples. The rate constants of the photoinduced change for the powder crystals were determined at various photon intensities, and linearity was observed. The photoinduced change seems to occur extremely fast in densely packed buckyferrocene films fabricated by vacuum deposition. (C) 2004 Elsevier Ltd. All rights reserved.
• Morphological change of C-60 monolayer epitaxial films under photoexcitation

  Y Yamamoto, H Ichikawa, K Ueno, A Koma, K Saiki, T Shimada

  PHYSICAL REVIEW B 70 (15) 155415  2469-9950 2004/10 [Refereed][Not invited]
   

  Thin films of C-60 were grown under laser irradiation at various intensities 0-200 mW/mm(2) and their growth shapes were investigated by ex situ atomic force microscopy (AFM) observation. The nucleation density of the first layer decreases with increasing laser intensity, probably due to the temperature rise of the migrating clusters. In addition to this gradual laser intensity dependence, an anomalous enhancement of the nucleation density was observed on irradiation at 50 mW/mm(2), which was attributed to the influence of photopolymerization. As for the second layer, there was a threshold laser intensity (200 mW/mm(2)) at which the nucleation density increased and the shape of the domains became irregular. This is due to the combined effect of hindered migration caused by the polymerized first layer and photopolymerization of the migrating molecules themselves. Energy transfer from the excited substrate to the migrating C-60 molecules is strongly suggested.
• Morphological change of C60 monolayer epitaxial films under photoexcitation

  Y. Yamamoto, H. Ichikawa, K. Ueno, A. Koma, K. Saiki, T. Shimada

  Physical Review B - Condensed Matter and Materials Physics 70 (15) 1 - 155415 0163-1829 2004/10 [Refereed][Not invited]
   

  Thin films of C60 were grown under laser irradiation at various intensities 0-200 mW/mm2 and their growth shapes were investigated by ex situ atomic force microscopy (AFM) observation. The nucleation density of the first layer decreases with increasing laser intensity, probably due to the temperature rise of the migrating clusters. In addition to this gradual laser intensity dependence, an anomalous enhancement of the nucleation density was observed on irradiation at 50 mW/mm2, which was attributed to the influence of photopolymerization. As for the second layer, there Was a threshold laser intensity (200 mW/mm2) at which the nucleation density increased and the shape of the domains became irregular. This is due to the combined effect of hindered migration caused by the polymerized first layer and photopolymerization of the migrating molecules themselves. Energy transfer from the excited substrate to the migrating C60 molecules is strongly suggested.
• Controlling molecular motion on the surface by electric field gradient during molecular beam epitaxy of liquid crystal ultrathin films

  T Shimada, M Nagahori, A Koma

  SURFACE SCIENCE 564 (1-3) L263 - L269 0039-6028 2004/08 [Refereed][Not invited]
   

  We studied the effect of a direct electric field with an intensity gradient during the thin film deposition of liquid crystal molecules under ultrahigh vacuum. Alignment of elongated islands was observed when the electric field was higher than the threshold value of 4x10(5) to 5x10(6) Vm(-1), which was dependent on the substrate temperature. Layer-by-layer molecular aggregation in the direction of the higher field was observed when the force due to the field gradient was greater than 10(-20)-10(-19) N. The acceleration of molecular hopping between adjacent sites is not enough to account for the aggregation and enhancement of the long range hopping by the unidirectional force must be involved. The present observation indicates that the motion of a single molecule or a nm-sized cluster on the surface can be controlled by electric fields if the molecule has a permanent dipole. (C) 2004 Elsevier B.V. All rights reserved.
• Molecular orientation and electronic structure of epitaxial bucky ferrocene (Fe(C-60(CH3)(5))C5H5) thin films

  T Kaji, T Shimada, H Inoue, Y Kuninobu, Y Matsuo, E Nakamura, K Saiki

  JOURNAL OF PHYSICAL CHEMISTRY B 108 (28) 9914 - 9918 1520-6106 2004/07 [Refereed][Not invited]
   

  Single crystalline epitaxial films of bucky ferrocene (Fe(C-60(CH3)(5))C5H5), a hybrid molecule of C-60 and ferrocene, were grown on MoS2(0001) substrates. By using reflection high-energy electron diffraction (RHEED) amplified by a microchannel plate (MCP), it was found that the lattice constant of the film decreased from 11.3 +/- 0.2 Angstrom at 1-2 monolayer (ML) to 10.2 +/- 0.2 Angstrom at 3 ML or thicker. Both of the lattice constants were incommensurate with that of the substrate, which indicates a new type of epitaxial growth. Valence electronic structures of the films at each thickness were measured with ultraviolet photoelectron spectroscopy (UPS) and the energy levels of molecular orbitals were identified in relation to the molecular orientation in the epitaxial film.
• [Cladribine monotherapy for patients with relapsed or refractory indolent non-Hodgkin lymphoma].

  Nakashima Y, Shimada T, Yamada Y, Choi I, Yufu Y, Uike N

  [Rinsho ketsueki] The Japanese journal of clinical hematology 7 45 (7) 568 - 570 0485-1439 2004/07 [Refereed][Not invited]
   

  Cladribine is a purine analogue that is resistant to degradation by adenosine deaminase. We describe the efficacy of cladribine monotherapy in 8 patients with relapsed or refractory indolent non-Hodgkin lymphoma. The median age of the patients was 57 years. All patients were given 1-3 courses of cladribine monotherapy at 0.09 mg/kg/day continuous infusion for 7 days. Although all patients had been treated with rituximab and CHOP-like regimens, the response rate was excellent (85.7%). Thus we consider that cladribine is the first treatment of choice in the patients with relapsed or refractory indolent lymphoma.
• Band structure and molecular orientation of ultrathin epitaxial films of squaric acid

  T Shimada, H Taira, T Miyadera, A Koma, K Saiki

  JOURNAL OF PHYSICAL CHEMISTRY B 108 (17) 5329 - 5332 1520-6106 2004/04 [Refereed][Not invited]
   

  Ultraviolet photoelectron spectroscopy of epitaxial films of squaric acid (H2C4O4), a two-dimensional antiferroelectric organic material, is reported. The band structure parallel to the two-dimensional molecular plane was derived, in which the dispersion of the HOMO-2 band was found to be as large as 0.7 eV. The molecular orientation was estimated by analyzing the angular distribution of the photoelectron intensities from various molecular orbitals using independent atomic center approximation.
• Methyl-terminated Si(111) surface as the ultra thin protection layer to fabricate position-controlled alkyl SAMs by using atomic force microscope anodic oxidation

  R Okada, T Miyadera, T Shimada, A Koma, K Ueno, K Saiki

  SURFACE SCIENCE 552 (1-3) 46 - 52 0039-6028 2004/03 [Refereed][Not invited]
   

  Methyl-terminated Si(111) (Me-Si(111)) and bilayer-GaSe terminated Si (BGS) surfaces were investigated to explore their usefulness as the protection layer in the fabrication process of nanometer-scale self-assembled monolayers (SAMs). BGS was not stable in the reagent involved in the alkyl SAM formation, whereas Me-Si(111) was suitable for the protection layer. Anodization using atomic force microscope (AFM) and following HF and hexadecene treatments were performed to form nano-scale alkyl SAM lines on the Me-Si(111) surface. It was found from AFM observation and frictional force measurement that only the patterned areas were selectively covered with hexadecyl SAMs. (C) 2004 Elsevier B.V. All rights reserved.
• Accelerated photopolymerization and increased mobility in C-60 field-effect, transistors studied by ultraviolet photoelectron spectroscopy

  T Shimada, T Suetsugu, T Miyadera, Y Yamamoto, A Koma, K Saiki, K Kudo

  APPLIED PHYSICS LETTERS 84 (13) 2439 - 2441 0003-6951 2004/03 [Refereed][Not invited]
   

  Ultraviolet photoelectron spectroscopy (UPS) of C-60 thin-film field-effect transistors was measured with biasing gate voltages. A time-dependent change in the electronic structure of the C-60 film was, observed during the UPS measurement, which has never been observed in a C-60 film grown on a conductive substrate. The change was attributed to the accelerated polymerization of C-60 by comparing the UPS with that of the photopolymerized C-60. The polymerization Was associated with the increase in the field-effect electron mobility. This result indicates that mobile carriers produce reactive radicals in organic semiconductors. (C) 2004 American Institute of Physics.
• Electron Spectroscopy of Organic Thin Film FETs

  Toshihiro Shimada

  IEEJ Transactions on Electronics, Information and Systems 社団法人 電気学会 124 (6) 1229 - 1233 1348-8155 2004 [Not refereed][Not invited]
   

  Organic thin film FETs have been studied by using electron spectroscopic techniques. Ultraviolet photoelectron spectroscopy has revealed that photo polymerization is enhanced by fabricating FET structure. Energy levels and the effective mass of charge carriers are discussed based on the results of photoelectron spectroscopy and electron energy loss spectroscopy. © 2004, The Institute of Electrical Engineers of Japan. All rights reserved.
• 27pZP-1 Spatial distribution of earrier in organic thin film transistor

  Kiguchi M., Nakayama M., Shimada T., Saiki K.

  Meeting Abstracts of the Physical Society of Japan 一般社団法人 日本物理学会 59.1.4 837  2004
• 13aPS-13 Cryogenic STM/STS observations of impurity-doped Bi-2212 single crystals

  Fukuo N., Mashima H, Kinoda G., Hitosugi T., Shimada T., Shimizu K., Shimoyama J., Kishio K., Hasegawa T.

  Meeting Abstracts of the Physical Society of Japan 一般社団法人 日本物理学会 59 (0) 463 - 463 1342-8349 2004 [Refereed][Not invited]
  
• Accumulation and depletion layer thicknesses in organic field effect transistors

  M Kiguchi, M Nakayama, K Fujiwara, K Ueno, T Shimada, K Saiki

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 42 (12A) L1408 - L1410 0021-4922 2003/12 [Refereed][Not invited]
   

  We present a simple but powerful method to determine the thicknesses of the accumulation and depletion layers and the distribution curve of injected carriers in organic field effect transistors. The conductivity of organic semiconductors in thin film transistors was measured in situ and continuously with a bottom contact configuration, as a function of film thickness at various gate voltages. Using this method, the thicknesses of the accumulation and depletion layers of pentacene were determined to be 0.9 nm (V-G = - 15 V) and 5 nm (V-G = 15 V), respectively.
• Photoassisted electrochemical deposition of copper from a bathocuproin complex

  T Shimada, Y Yamamoto, K Saiki, A Koma

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 42 (8A) L964 - L966 0021-4922 2003/08 [Refereed][Not invited]
   

  It was found that electrochemical deposition of copper from a [Cu(2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline)(2)](+) ([Cu(bcp)(2)](+)) complex can be induced by photoirradiation at a certain cathode potential. It can be used for photopatterning of copper and controlling electrodeposition of copper in microelectronics applications. The mechanism of the photoassisted electrochemical deposition is suggested to be due to the reduced stability of the photoexcited complex.
• Interferometric microscopy observation of the initial stage of electrochemical crystal growth of (DMe-DCNQI)(2)Cu

  T Shimada, T Kaji, K Saiki, A Koma

  JOURNAL OF CRYSTAL GROWTH 253 (1-4) 351 - 356 0022-0248 2003/06 [Refereed][Not invited]
   

  Interferometric microscopy was used to observe the initial stage of the crystal growth of an organic charge transfer salt (DMe-DCNQI)(2)Cu by electrochemical reaction. It was found that concentric patterns started to appear after applying the potential difference between the electrodes. Bright rings of the concentric pattern moved outward for about 15 s and slowed down the movement after the period. It shows the change in the solution concentration just after the nucleation. (C) 2003 Elsevier Science B.V. All rights reserved.
• Electron spectroscopy of chemically synthesized ZnS clusters

  Y Kaminuta, A Koma, T Shimada

  SOLID STATE COMMUNICATIONS 125 (11-12) 581 - 585 0038-1098 2003/03 [Refereed][Not invited]
   

  Thin films of ionic compounds of ZnS clusters were measured by electron energy loss spectroscopy (EELS) and ultraviolet photoelectron spectroscopy (UPS). A size effect was observed in the valence plasmon energy measured by EELS from which the coherence length of the plasmon excitation can be estimated. The difference between the lowest excitations observed in UPS and EELS can be explained by the final state charging effect of a single cluster ion in UPS, which strongly depends upon the nominal charges of the clusters. (C) 2003 Published by Elsevier Science Ltd.
• Ultraviolet photoelectron spectroscopy of a methyl-terminated Si(111) surface

  T Miyadera, A Koma, T Shimada

  SURFACE SCIENCE 526 (1-2) 177 - 183 0039-6028 2003/02 [Refereed][Not invited]
   

  Angle-resolved ultraviolet photoelectron spectroscopy (ARUPS) of a Si(I 11) surface regularly terminated by methyl groups is reported. The electrochemical methylation was performed in inert atmosphere. The cleanliness and I x 1 ordering of the surface were confirmed by Auger electron spectroscopy and reflection high-energy electron diffraction, respectively. The energy band diagram has been obtained from ARUPS and each energy level was assigned from the comparison with the results of hydrogen-terminated Si(I 11) and quantum chemical cluster calculation. (C) 2002 Elsevier Science B.V. All rights reserved.
• Prospects of electron spectroscopy of working organic electronic device structures

  T Shimada, A Koma

  IEICE TRANSACTIONS ON ELECTRONICS E85C (6) 1330 - 1331 0916-8524 2002/06 [Refereed][Not invited]
   

  The prospects of electron spectroscopy of working organic electronic device structures are discussed. The experimental consideration and the result of actual measurement are presented.
• Highly stable passivation of a Si(111) surface using bilayer-GaSe

  K Ueno, H Shirota, T Kawamura, T Shimada, K Saiki, A Koma

  APPLIED SURFACE SCIENCE 190 (1-4) 485 - 490 0169-4332 2002/05 [Refereed][Not invited]
   

  As a stable and 'epitaxial' passivation of a Si surface, we propose the bilayer-GaSe termination of a Si(1 1 1) surface. This surface is fabricated by depositing one monolayer of Ga on a clean Si(1 1 1) surface and subsequent annealing in a Se flux at around 520 degreesC, which results in unreconstructed 1 x 1 termination of the Si(1 1 1) surface by bilayer-GaSe. We found by scanning tunneling microscopy observation that slow cooling of the clean Si(1 1 1) surface from 850 to 520 degreesC with simultaneous deposition of a Ga flux results in better termination of the Si(1 1 1) surface. It was also found that this surface is stable against heating around 400 degreesC in O-2 atmosphere of 3 x 10(-3) Pa. By utilizing these properties of the bilayer-GaSe terminated surface, we have succeeded in fabricating ZnO quantum dots on this substrate. (C) 2002 Elsevier Science B.V. All rights reserved.
• Electron spectroscopy of C-60 thin film FET structures

  T Shimada, A Koma

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 41 (4B) 2724 - 2726 0021-4922 2002/04 [Refereed][Not invited]
   

  Electron spectroscopy experiments were attempted to the measure the electronic structure of organic field effect transistors (FETs) under a gate bias. Sample structure, experimental condition and results of FETs made of C-60 are described. C-60 FET structures showed irreversible change of the valence spectra during the ultraviolet photoelectron spectroscope measurement under a gate bias voltage. Electron energy loss spectroscopy after the change revealed a substantial lowering of the plasmon energy which indicates that the discrete spherical boundary condition of the molecular plasmon was broken. This suggests polymerization of C-60 by a combined effect of the gate bias and vacuum ultraviolet irradiation.
• 分子エレクトロニクスのためのドライプロセス (特集 分子エレクトロニクスの展望)

  島田 敏宏

  化学工業 化学工業社 52 (8) 605 - 609 0451-2014 2001/08 [Not refereed][Not invited]
  
• Epitaxial growth and electronic structure of a C-60 derivative prepared by using a solution spray technique

  T Shimada, H Nakatani, K Ueno, A Koma, Y Kuninobu, M Sawamura, E Nakamura

  JOURNAL OF APPLIED PHYSICS 90 (1) 209 - 212 0021-8979 2001/07 [Refereed][Not invited]
   

  We demonstrate and analyze the epitaxial film formation of a molecular material that cannot be evaporated in vacuum due to thermal decomposition. A solution of the material is sprayed onto single crystalline van der Waals surfaces using a pulse valve under controlled vapor pressure of the solvent. Monolayer epitaxial films are obtained and we propose that the growth is mediated by liquid ultrathin films formed on the surface. Molecular arrangement and electronic structure of C-60(CH3)(5)H films are studied by reflection high energy electron diffraction and ultraviolet photoelectron spectroscopy, respectively. The present technique will be useful to study the electronic structure of recently synthesized molecular materials. (C) 2001 American Institute of Physics.
• Control of initial growth processes of epitaxial films using pulsed molecular beams

  T Shimada, KA Cho, A Koma

  PHYSICAL REVIEW B 63 (15) 153404  2469-9950 2001/04 [Refereed][Not invited]
   

  Kinetics of epitaxial thin film growth was analyzed from the experiments using pulsed organic molecular beams. It was found that a minimum appears in the nucleation density as a function of on-off cycle time when the substrate temperature is near the threshold between growth and reevaporation. This feature can be explained by assuming desorption of molecules induced by mutual collision on the surface, for which orientation-sensitive intermolecular forces are responsible.
• Ordered growth and crystal structure of Alq(3) on alkali halide surfaces

  H Ichikawa, T Shimada, A Koma

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 40 (3A) L225 - L227 0021-4922 2001/03 [Refereed][Not invited]
   

  Ordered films of tris-8-hydroxyquionolate-aluminum (Alq(3)) were grown by molecular beam deposition on cleaved KCl and KBr surfaces. The local molecular arrangements in the films were characterized by two-dimensional analysis of multiazimuth reflection medium energy electron diffraction (RMEED). A new type of curved one-dimensional crystallographic ordering was observed on KBr while a continuous point-on-line-type ordering was observed on KCl. Growth of the crystals consisting of mer isomers is suggested from the observed triple period superstructure.
• Control of initial growth processes of epitaxial films using pulsed molecular beams

  T. Shimada, K. A. Cho, A. Koma

  Physical Review B - Condensed Matter and Materials Physics 63 (15) 1550-235X 2001 [Refereed][Not invited]
   

  Kinetics of epitaxial thin film growth was analyzed from the experiments using pulsed organic molecular beams. It was found that a minimum appears in the nucleation density as a function of on-off cycle time when the substrate temperature is near the threshold between growth and reevaporation. This feature can be explained by assuming desorption of molecules induced by mutual collision on the surface, for which orientation-sensitive intermolecular forces are responsible. © 2001 The American Physical Society.
• Surface migration dynamics of a planar organic molecule studied by pulsed molecular beam scattering

  T. Shimada, R. Hashimoto, J. Koide, Y. Kamimuta, A. Koma

  Surface Science 470 (1-2) L52 - L56 0039-6028 2000/12/20 [Refereed][Not invited]
   

  Pulsed molecular beam scattering technique was applied to analyze the dynamics of a large planar molecule migrating on various surfaces (Au(1 1 1), graphite(0 0 0 1), mica (0 0 1), amorphous silicon oxide). It was found that molecules can stay on the surface for seconds without condensation. Activation energies have a magnitude comparable to those of a single ionic or covalent bonding, which reflects the additivity of the van der Waals interaction. Possible contribution of the diffusion to the surface residence time is discussed.
• Elementary processes of organic epitaxial growth studied by pulsed molecular beam technique

  Shimada Toshihiro

  Technical report of IEICE. OME 一般社団法人電子情報通信学会 100 (245) 1 - 4 0913-5685 2000/07/21 [Not refereed][Not invited]
   

  We are studying elementary processes of organic epitaxial growth by using pulsed molecular beam technique. First, hydrogen phthalocyanine beam was irradiated onto various inorganic surfaces and the time profile of desorbing molecules were measured. The surface residence time was found to be as long as seconds. Arrhenius type plots were well fit by lines, from which characteristic energies of molecule-surface interaction were determined. Second, thin film growth by pulsed molecular beam of quinacridone was studied using atomic force microscopy. Observed minimum in the nucleation density as a...
• Nucleation control in organic selective epitaxy by pulsed molecular beam technique

  KA Cho, T Shimada, A Koma

  PHYSICA E 7 (3-4) 887 - 890 1386-9477 2000/05 [Refereed][Not invited]
   

  Enhancement of the selectivity in organic molecular beam epitaxy was achieved by using pulsed molecular beams. It utilizes the nucleation kinetics before reaching stationary state of the growth. The time scale needed for the stationary state is estimated by changing the cycle time of the pulses. (C) 2000 Elsevier Science B.V. All rights reserved.
• Velocity distribution of organic molecules emitted from effusion cells measured by time-of-flight technique

  T Shimada, J Koide, KA Cho, A Koma

  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS 17 (2) 615 - 618 0734-2101 1999/03 [Refereed][Not invited]
   

  Velocity distribution of the molecules emitted from effusion cells commonly used in molecular beam epitaxy was measured by using time-of-flight technique. The result for organic molecular phthalocyanine can be fitted by a shifted Maxwellian distribution. The effects of the temperature and the aspect ratios of the sources are discussed. (C) 1999 American Vacuum Society. [S0734-2101(99)03502-2].
• Monolayer films of liquid crystal 12CB grown by molecular beam deposition on cleaved surfaces of alkali halides

  T Shimada, H Nagahori, A Koma

  SURFACE SCIENCE 423 (2-3) L285 - L290 0039-6028 1999/03 [Refereed][Not invited]
   

  Ultrathin films of liquid crystal 12CB with monolayer-order thickness were grown on cleaved (001) surfaces of NaCl, KC1 and KBr substrates by molecular beam deposition. The molecular arrangement and the morphology of the films were analyzed by high sensitivity reflection high energy electron diffraction and atomic force microscopy (AFM), respectively. Epitaxial films were formed on KCI and KBr, whereas only one-dimensional ordering was observed on NaCl. AFM images of 12CB monolayers grown on NaCl just below the bulk transition temperature showed a characteristic morphology resembling an arabesque in sub-micron scales. It is attributed to orientational fluctuation of local crystal axes at growth fronts. (C) 1999 Elsevier Science B.V. All rights reserved.
• Selective epitaxial growth of organic molecules on patterned alkali halide substrates

  T Shimada, T Sakurada, A Koma

  APPLIED PHYSICS LETTERS 74 (7) 941 - 943 0003-6951 1999/02 [Refereed][Not invited]
   

  Selective epitaxial growth of organic materials is found and analyzed. It is observed during the molecular beam epitaxy of organic molecules and charge transfer complexes on ionic surfaces. The selectivity comes from lattice matching condition on critical nuclei formation in contrast to compound semiconductors for which covalent chemical bonding plays essential roles. It can be utilized to fabricate micropatterns of crystalline organic materials accompanied by lithography processes of alkali halides using NH3 plasma. Feasibility of building three-dimensional microstructures has also been shown, which is readily applicable to make photonic crystals from optically functional organic materials. (C) 1999 American Institute of Physics. [S0003-6951(99)02507-3].
• Effect of growth temperature and substrate materials on epitaxial growth of coronene

  KA Cho, T Shimada, M Sakurai, A Koma

  JOURNAL OF APPLIED PHYSICS 84 (1) 268 - 274 0021-8979 1998/07 [Refereed][Not invited]
   

  Epitaxial growth of coronene (C24H12) was studied on substrates having no dangling bonds, such as hydrogen-terminated Si(lll), MoS2, MoTe2, and muscovite by using reflection high-energy electron diffraction. It was found that the sticking coefficient and the maximum thickness of the epitaxial films are strongly dependent on the substrate materials as well as on the growth temperature. The effectiveness of molecular mechanics calculation was examined by comparing the calculated stabilization energies with the experimental results. Importance of the electronic structure of substrates has been revealed and its effect was estimated quantitatively using the Lifshitz theory. The tendency that the interfacial dispersion force is stronger for smaller band gap materials has been shown from theoretical consideration. (C) 1998 American Institute of Physics.
• Epitaxial growth of squaric acid

  T Shimada, H Taira, A Koma

  CHEMICAL PHYSICS LETTERS 291 (3-4) 419 - 424 0009-2614 1998/07 [Refereed][Not invited]
   

  Ultrathin film growth of squaric add (H2C4O4) has been attempted on (001) surfaces of various alkali halides. Epitaxial films were obtained on KCl, NaBr and KBr substrates. Ultraviolet optical absorption spectra of the films were strongly dependent on the substrates, suggesting a possibility of modifying correlated hydrogen bonding by 'epitaxial pressure'. (C) 1998 Elsevier Science B.V. All rights reserved.
• Preparation and magnetic properties of manganese(II) phthalocyanine thin films

  H Yamada, T Shimada, A Koma

  JOURNAL OF CHEMICAL PHYSICS 108 (24) 10256 - 10261 0021-9606 1998/06 [Refereed][Not invited]
   

  We report the molecular beam epitaxy (MBE) growth of the manganese(II) phthalocyanine thin films with unique crystal structure and the measurement of their magnetic properties. The epitaxial films were grown on hydrogen-terminated Si(111) substrates. Reflection high energy electron diffraction observations showed that the crystal structure of the films is different from that of the bulk crystal. A large magnetic anisotropy was observed in the measurements with the SQUID magnetometer. The films did not show canted ferromagnetism which is usually observed in the beta-type crystal of manganese phthalocyanine. The magnetic susceptibility measured with magnetic field normal to the substrate obeyed the Curie-Weiss law with a negative Curie-Weiss constant, indicating the existence of the antiferromagnetic interaction. The negative Curie-Weiss constant was also observed in disordered films of manganese phthalocyanine. The variation of magnetic properties between the bulk crystal and the films is explained in terms of the difference in superexchange interaction caused by microscopic modification of the crystal structure, i.e., the stacking arrangement of the molecules. (C) 1998 American Institute of Physics.
• Electronic structures at the interfaces between copper phthalocyanine and layered materials

  T Shimada, K Hamaguchi, A Koma, FS Ohuchi

  APPLIED PHYSICS LETTERS 72 (15) 1869 - 1871 0003-6951 1998/04 [Refereed][Not invited]
   

  Copper phtalocyanine (CuPc) films with the thickness controlled in molecular scales have been grown epitaxially on (0001) surfaces of layered materials, and electronic interaction at the interfaces have been studied by photoelectron spectroscopy. Materials with different electronic properties having different work functions (E-vac) were chosen as the substrates; semiconducting MoTe2 (E-vac=4.0 eV), semi-metallic highly oriented pyrolytic graphite (E-vac=4.5 eV) and metallic TaSe2 (E-vac=5.5 eV). Formation of interface dipole layers was found at CuPc/TaSe2 interfaces and molecular orbitals involved were identified. (C) 1998 American Institute of Physics.
• Electron energy-loss spectroscopy of (DMe-DCNQI)(2)Cu

  M Mochida, T Shimada, A Koma

  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS 15 (4) 2119 - 2121 0734-2101 1997/07 [Refereed][Not invited]
   

  Electron energy-loss spectroscopy (EELS) has been applied to in situ prepared (DMe-DCNQI)(2)Cu (DMe-DCNQI=2,5-dimethyl-N,N'-dicyanoquinonediimine). The intensity of the loss peaks changed significantly with the primary electron energies. It is probably due to the matrix element effects of the EELS. In conjunction with photoelectron spectroscopy using synchrotron radiation, the nature of the unoccupied levels has been elucidated. (C) 1997 American Vacuum Society.
• Thermal desorption measurement of ultrathin epitaxial organic films by optical spectroscopy

  T Shimada, H Taira, A Koma

  SURFACE SCIENCE 384 (1-3) 302 - 307 0039-6028 1997/07 [Refereed][Not invited]
   

  Thermal desorption of epitaxial films of vanadyl phthalocyanine (VOPc:C32N8H16VO) and squaric acid (SQ:C4O4H2) was measured by using temperature programmed optical absorption spectroscopy. The activation energies for the desorption and pre exponential factors were determined by measuring the amount of the molecules remaining in the film. Change in the molecular arrangement of VOPc during the desorption was detected from the spectra. The effects of hydrogen bonding and antiferroelectric transition of SQ are discussed. (C) 1997 Elsevier Science B.V.
• Characterizing reactions to fabricate thin films of charge transfer complexes by synchrotron photoelectron spectroscopy: A case study of DCNQI-Cu

  T Shimada, M Mochida, A Koma

  APPLIED SURFACE SCIENCE 113 322 - 325 0169-4332 1997/04 [Refereed][Not invited]
   

  Ultraviolet photoelectron spectroscopy with various photon energies using synchrotron radiation was used to characterize chemical reactions associated with thin film growth of organic charge transfer complex (DMe-DCNQI)(2)Cu. Other molecular systems H2Pc, CuPc and C-60 were also studied to clarify the origin of the systematic relation between the spectra and the incident photon energy. Characteristic photon energy dependence of the photo-ionization cross section of molecular orbitals is useful to analyze the intermolecular reactions.
• Epitaxial growth of organic molecules on vicinal surfaces of single crystals

  T Shimada, T Sakurada, A Koma

  ELECTROCHEMICAL SYNTHESIS AND MODIFICATION OF MATERIALS 451 167 - 172 0272-9172 1997 [Refereed][Not invited]
   

  Ultrathin film growth of vanadyl phthalocyanine was attempted on vicinal surfaces of hydrogen-terminated Si(111) in order to see the effect of regularly spaced steps to the growth feature. It has been observed that molecular arrangement was substantially affected when the terrace width was narrower than 2 similar to 4 times of the molecular lattice constants. This result is probably due to the weakness of molecular interaction in the material and it accounts for the reason why ordinary graphoepitaxy has not been successful for the organic thin films.
• Polytypes and crystallinity of ultrathin epitaxial films of layered materials studied with grazing incidence X-ray diffraction

  T Shimada, H Nishikawa, A Koma, Y Furukawa, E Arakawa, K Takeshita, T Matsushita

  SURFACE SCIENCE 369 (1-3) 379 - 384 0039-6028 1996/12 [Refereed][Not invited]
   

  The structure of ultrathin epitaxial films of layered NbSe2 and TaSe2 grown on Se-terminated GaAs((111) over bar) substrates was determined by grazing incidence X-ray diffraction. It was found that the crystallographic polytypes of the films were dependent on the growth temperatures. The temperature range for the growth of octahedrally coordinated TaSe2 was different from that of the bulk. Disappearance of 3R-type portion in NbSe2 at a high growth temperature will be favorable to fabricate superconducting ultrathin epitaxial films.
• Epitaxial growth of TiSe2 thin films on Se-terminated GaAs(111)B

  H Nishikawa, T Shimada, A Koma

  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS 14 (5) 2893 - 2896 0734-2101 1996/09 [Refereed][Not invited]
   

  Epitaxial growth of TiSe2 films on Se-terminated GaAs(111)B substrates were carried out at different growth temperature by molecular beam epitaxy. Grown films have been investigated by reflection high energy electron diffraction, Auger electron spectroscopy, and measurements of resistivity parallel to the surface. TiSe2 epitaxial films have been obtained at various temperatures, but the optimum growth temperature was determined to be 400 degrees C. A charge density wave transition has been observed in the resistivity of the film grown at 400 degrees C, indicating that it has a good quality comparable to a bulk single crystal. (C) 1996 American Vacuum Society.
• Epitaxial growth of metal phthalocyanines on hydrogen terminated vicinal surfaces of Si(111)

  T Shimada, A Suzuki, T Sakurada, A Koma

  APPLIED PHYSICS LETTERS 68 (18) 2502 - 2504 0003-6951 1996/04 [Refereed][Not invited]
   

  Hydrogen-terminated vicinal Si(lll) surfaces provide quasi-van der Waals substrates with regularly spaced atomic height steps for the epitaxy of organic material films. Molecular beam epitaxy of vanadyl and copper phthalocyanines (VOPc and CuPc) was attempted on just-cut and 7 degrees-miscut surfaces in order to investigate the effect of the steps on the epitaxial growth feature. The molecular arrangement of the films was characterized by a new technique using multiple-azimuth reflection high energy electron diffraction. Growth on misoriented substrates producted VOPc monolayer films consisting of one-dimensional chains nearly aligned to the steps and multilayer CuPc films with controlled domain orientations. (C) 1996 American Institute of Physics.
• Patterning of epitaxial organic films by selective epitaxial growth

  A Suzuki, T Shimada, A Koma

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 35 (2B) L254 - L257 0021-4922 1996/02 [Refereed][Not invited]
   

  A new method of patterning crystalline organic molecular films is proposed and demonstrated. It utilizes a selective growth, or the difference in the sticking coefficient of an organic material on various inorganic substrates in a certain temperature range. The object structure is first patterned on a single-crystalline substrate with an epitaxial film of a different material grown by molecular beam epitaxy (MBE) through a mask, and then a beam of the organic molecule is irradiated uniformly after removing the mask.
• WORK FUNCTION AND PHOTOTHRESHOLD OF LAYERED METAL DICHALCOGENIDES

  T SHIMADA, FS OHUCHI, BA PARKINSON

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 33 (5A) 2696 - 2698 0021-4922 1994/05 [Refereed][Not invited]
   

  Work functions and photothreshold values of various layered metal dichalcogenides (ZrSe2, HfSe2, NbSe2, 1T-TaS2, 2H-TaS2, MoS2, MoSe2, alpha-MoTe2, SnS2, SnSe2) have been measured by a photoemission technique. The measured photothreshold values, except for Sn compounds, are compared with the calculated values based on various band models. The agreement between the observed and calculated values is satisfactory for most of the materials.
• STRUCTURE DETERMINATION OF ULTRATHIN NBSE2 FILMS BY GRAZING-INCIDENCE X-RAY-DIFFRACTION

  T SHIMADA, Y FURUKAWA, E ARAKAWA, K TAKESHITA, T MATSUSHITA, H YAMAMOTO, A KOMA

  SOLID STATE COMMUNICATIONS 89 (7) 583 - 586 0038-1098 1994/02 [Refereed][Not invited]
   

  Grazing incidence x-ray diffraction (GID) technique was applied to determine the three dimensional structures of NbSe2 films grown by van der Waals epitaxy. Atomic arrangements along the surface normal in nm-order films were established from the analysis of Bragg rod profiles measured with GID. The obtained structural polytypes of the films grown on HOPG and Se terminated GaAs(111BAR) were 2Hb and a mixture of 2Hb and 3R, respectively. This result indicates that the polytypes are controlled by the substrate materials in van der Waals epitaxy.
• POLYTYPES AND CHARGE-DENSITY WAVES OF ULTRATHIN TAS2 FILMS GROWN BY VAN-DER-WAALS EPITAXY

  T SHIMADA, FS OHUCHI, A KOMA

  SURFACE SCIENCE 291 (1-2) 57 - 66 0039-6028 1993/07 [Refereed][Not invited]
   

  Ultrathin films of TaS2, a two-dimensional metal known for charge density waves (CDWs) and polytypes, have been grown epitaxially on various layered substrates by molecular beam epitaxy and characterized with surface science techniques. STM image of the films shows irregular modulation which has similarity with that of the CDW. Ta(4f) XPS spectra of monolayer films have a correlation with the work functions of the substrates, probably due to the modification of the polytypes and the CDWs. The importance of the formation energy of the electric dipole layer at the interface is discussed.
• Polytypes and charge density waves of ultrathin TaS2 films grown by van der Waals epitaxy

  Toshihiro Shimada, FumioS. Ohuchi, Atsushi Koma

  Surface Science Letters 291 (1-2) 0167-2584 1993/07
• MOLECULAR-BEAM EPITAXY OF SNSE2 - CHEMISTRY AND ELECTRONIC-PROPERTIES OF INTERFACES

  T SHIMADA, FS OHUCHI, A KOMA

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 32 (3A) 1182 - 1185 0021-4922 1993/03 [Refereed][Not invited]
   

  A layered material SnSe2 was grown epitaxially on various layered materials (MoS2, NbSe2, graphite), while reacting with Al2O3(0001) substrates. The films were characterized by means of X-ray photoemission spectroscopy, reflection high energy electron diffraction, and scanning tunneling microscopy. The observed band bending was consistent to the work function difference between the film and the substrate, indicating the Schottky limit property of the junctions. Applications of this system are discussed.
• THERMAL-DECOMPOSITION OF SNS2 AND SNSE2 - NOVEL MOLECULAR-BEAM EPITAXY SOURCES FOR SULFUR AND SELENIUM

  T SHIMADA, FS OHUCHI, BA PARKINSON

  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS 10 (3) 539 - 542 0734-2101 1992/05 [Refereed][Not invited]
   

  New sources of selenium and sulfur for UHV preparation of thin films are described. These sources, utilizing the high temperature thermal decomposition of SnSe2 and SnS2, are bakeable to at least 300-degrees-C providing much more convenience than element Se and S sources. The thermal decomposition is studied with thermal gravitometry, mass spectrometry, and x-ray photoemission spectroscopy. The utility of the sources is demonstrated by the epitaxial growth of TiSe2 on MoS2.
• Heteroepitaxial growth of alkali halide thin films on GaAs substrates

  Koichiro Saiki, Yuji Nakamura, Atsushi Koma

  Surface Science 269-270 790 - 796 0039-6028 1992/05
• 25p-ZG-11 Angular Dependent Magnetoresistance of Transition Metal Dichalcogenides

  Shimada T, Yoshii K, Saiki K, Koma A

  Meeting Abstracts of the Physical Society of Japan 一般社団法人 日本物理学会 1992.2 119  1992
• EPITAXIAL-GROWTH AND CHARGE-DENSITY WAVE OF TASE2

  T SHIMADA, FS OHUCHI, BA PARKINSON

  PHASE TRANSFORMATION KINETICS IN THIN FILMS 230 231 - 236 1992 [Refereed][Not invited]
  
• GROWTH OF MOSE2 THIN-FILMS WITH VANDERWAALS EPITAXY

  FS OHUCHI, T SHIMADA, BA PARKINSON, K UENO, A KOMA

  JOURNAL OF CRYSTAL GROWTH 111 (1-4) 1033 - 1037 0022-0248 1991/05 [Refereed][Not invited]
   

  The concept of Van der Waals epitaxy that has been recently introduced removes severe lattice matching requirement by using materials which only have strong bonding in two dimensions. We demonstrate that an epilayer of MoSe2 deposited on various substrates can produce films of high crystalline quality despite of large mismatch. RHEED oscillation, observed in-situ for growing MoSe2 epilayers, shows a layer-by-layer growth with evidence for for bilayer type growth, from which the 2H(b) polytype is determined. STM provides real space images of the morphology of the epilayer, and shows novel structures resulting from the large lattice mismatch where the epilayer atoms are commensurated.
• RHEED OSCILLATION DURING THE EPITAXIAL-GROWTH OF LAYERED MATERIALS

  T SHIMADA, FS OHUCHI, A KOMA

  ADVANCES IN SURFACE AND THIN FILM DIFFRACTION 208 47 - 52 1991 [Refereed][Not invited]
  
• EPITAXIAL-GROWTH OF TRANSITION-METAL DICHALCOGENIDES ON CLEAVED FACES OF MICA

  K UENO, K SAIKI, T SHIMADA, A KOMA

  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS 8 (1) 68 - 72 0734-2101 1990/01 [Refereed][Not invited]
  
• HETEROEPITAXIAL GROWTH OF LAYERED TRANSITION-METAL DICHALCOGENIDES ON SULFUR-TERMINATED GAAS (111) SURFACES

  K UENO, T SHIMADA, K SAIKI, A KOMA

  APPLIED PHYSICS LETTERS 56 (4) 327 - 329 0003-6951 1990/01 [Refereed][Not invited]
  
• RHEED intensity Oscillation during Epitaxial Growth of Layered Materials

  Toshihiro Shimada, Hideki Yamamoto, Koichiro Saiki, Atsushi Koma

  Japanese Journal of Applied Physics 29 (11) L2096 - L2098 1347-4065 1990 [Refereed][Not invited]
   

  Diffracted beam intensities in reflection high energy electron diffraction (RHEED) have been observed to oscillate during the epitaxial growth of NbSe2and MoSe2on GaAs(111) infstrates. This is the first observation of RHEED oscillation in layered materials, to the author's knowledge. Monolayer- and bilayer-mode oscillations have been observed at different diffraction points. The existence of the bilayer-mode oscillation leads to the determination of the polytype of the grown films. it has also been shown that the antiphase portion of the grown film is considerably small. © 1990 IOP Publishing Ltd.
• APPLICATION OF VANDERWAALS EPITAXY TO HIGHLY HETEROGENEOUS SYSTEMS

  K SAIKI, K UENO, T SHIMADA, A KOMA

  JOURNAL OF CRYSTAL GROWTH 95 (1-4) 603 - 606 0022-0248 1989/02 [Refereed][Not invited]
  
• The Transisopropylation of Naphthalene

  Keizo Shimada, Shizuo Nagahama

  Bulletin of the Chemical Society of Japan 48 (3) 1059 - 1060 0009-2673 1975/03
• \textlessWO2010117012A1 - Permeability evaluation device and evaluation method .pdf\textgreater

  敏宏 島田
• \textlessWO2010117012A1 - Permeability evaluation device and evaluation method .pdf\textgreater

  敏宏 島田
• \textlessWO2010117012A1 - Permeability evaluation device and evaluation method .pdf\textgreater

  敏宏 島田
• \textless表面科学30_7.pdf\textgreater

  敏宏 島田
• \textless表面科学30_7.pdf\textgreater

  敏宏 島田
• \textlessWO2010117012A1 - Permeability evaluation device and evaluation method .pdf\textgreater

  敏宏 島田

Conference Activities & Talks

• MoS2のＣＶＤ成長－触媒ナノ粒子を用いたナノチューブ成長と薄膜の不純物・欠陥の解析  [Invited]

  島田敏宏

  2018年日本表面真空学会学術講演会  2018/11
• フラックス蒸発法による有機半導体単結晶成長と応用  [Invited]

  島田敏宏

  応用物理学会第79回秋季学術講演会  2018/09
• 有機半導体はどこまでフレキシブルか？ ― 計算と実験から考える(特別講演)  [Invited]

  島田敏宏

  第２５回有機EL討論会  2017/11
• Synthesis of nanomaterials by chemical vapor deposition  [Invited]

  Toshihiro Shimada

  The 53rd Summer Annual Conference of the Korean Vacuum Society International Symposium, Gangwon-do, Korea  2017/08

MISC

• MOFへの高温高圧処理による炭素・金属複合材料の合成と機能

  佐藤昴汰, 山根伊知郎, 神谷裕一, 大友亮一, 柳瀬隆, 長浜太郎, 島田敏宏  日本表面真空学会東北・北海道支部学術講演会講演予稿集  2020 (CD-ROM)-  2021
• CaMoO₄の表面からの硫化によるMoS₂薄膜の作製

  内藤樹, 柳瀬隆, 長浜太郎, 島田敏宏  日本表面真空学会東北・北海道支部学術講演会講演予稿集  2020 (CD-ROM)-  2021
• 交互蒸着法を用いた共有結合性有機構造体(COF)膜の作製

  加藤将貴, 柳瀬隆, 長浜太郎, 島田敏宏  日本表面真空学会東北・北海道支部学術講演会講演予稿集  2020 (CD-ROM)-  2021
• Fabrication of Covalent Organic Framework Films by Alternating Deposition

  加藤将貴, 柳瀬隆, 長浜太郎, 島田敏宏  応用物理学会春季学術講演会講演予稿集(CD-ROM)  68th-  2021
• Large Inverse TMR in Fe₃O₄(001)/MgO(001)/Fe(001) magnetic tunnel junctions

  安井彰馬, 本多周太, 岡林潤, 柳瀬隆, 島田敏宏, 長浜太郎  応用物理学会春季学術講演会講演予稿集(CD-ROM)  68th-  2021
• Fabrication of B2 and DO₁₉ Fe₃Sn epitaxial films and magnetic transport properties

  前野央, 後藤有貴, 柳瀬隆, 島田敏宏, 長浜太郎  応用物理学会北海道支部/日本光学会北海道支部合同学術講演会講演予稿集  56th-17th (CD-ROM)-  2021
• Fe₃O₄/MgO/Fe磁気トンネル接合におけるトンネル磁気抵抗効果

  安井彰馬, 柳瀬隆, 島田敏宏, 長浜太郎  応用物理学会北海道支部/日本光学会北海道支部合同学術講演会講演予稿集  56th-17th (CD-ROM)-  2021
• 酸化物単結晶の硫化処理による原子層物質の合成

  島田敏宏, 内藤樹, 後藤真菜美, 長浜太郎, 柳瀬隆  セラミックス基礎科学討論会講演要旨集  58th-  2020
• CVD growth and magnetic and electric measuement of Fe naowires grown by FeO nanoparticle catalyst

  柳瀬隆, 淡嶋義弘, 荻原初夏, 長浜太郎, 島田敏宏  日本セラミックス協会年会講演予稿集(CD-ROM)  2020-  2020
• Change of diamond surface by annealing with alkali metal

  竹鼻大貴, 山根伊知郎, 柳瀬隆, 長浜太郎, 島田敏宏  応用物理学会春季学術講演会講演予稿集(CD-ROM)  67th-  2020
• Magnetic and transport properties of NiCo₂O₄ fabricated by reactive MBE

  辻榮朝香, 柳瀬隆, 島田敏宏, 長浜太郎  応用物理学会春季学術講演会講演予稿集(CD-ROM)  67th-  2020
• NiCo₂O₄ films fabricated by reactive MBE and annealing in various oxygen pressures

  辻榮朝香, 原吉典, 柳瀬隆, 島田敏宏, 長浜太郎  応用物理学会秋季学術講演会講演予稿集(CD-ROM)  81st-  2020
• Single Crystal Growth of π-Conjugated Molecules by Naphthalene Flux Method

  柳瀬隆, 酒井宣彦, 長浜太郎, 島田敏宏  応用物理学会秋季学術講演会講演予稿集(CD-ROM)  81st-  2020
• Synthesis of MoS₂ thin films on single crystal CaMoO₄ by sulfurization

  内藤樹, 柳瀬隆, 長浜太郎, 島田敏宏  応用物理学会秋季学術講演会講演予稿集(CD-ROM)  81st-  2020
• 乱流を用いたCVD法によるMoS₂ナノチューブの合成

  後藤真菜美, 柳瀬隆, 長浜太郎, 島田敏宏  応用物理学会春季学術講演会講演予稿集(CD-ROM)  66th-  2019
• D0₁₉型X₃Sn(X=Fe,Mn)薄膜の作製とその磁気伝導特性

  前野央, 柳瀬隆, 島田敏宏, 辻川雅人, 辻川雅人, 白井正文, 白井正文, 長浜太郎  応用物理学会春季学術講演会講演予稿集(CD-ROM)  66th-  2019
• Li₂C₂を原料とする新規ナノカーボンの合成

  小谷直人, 田村貴大, 柳瀬隆, 長浜太郎, 島田敏宏  応用物理学会春季学術講演会講演予稿集(CD-ROM)  66th-  2019
• アセン類への高温高圧処理による炭素固体の合成

  山根伊知郎, 柳瀬隆, 長浜太郎, 島田敏宏  高圧討論会講演要旨集  60th-  2019
• 磁性体ナノワイヤのCVD合成と単一ナノワイヤに対する物性評価

  淡嶋義弘, 柳瀬隆, 長浜太郎, 島田敏宏  応用物理学会秋季学術講演会講演予稿集(CD-ROM)  80th-  2019
• 乱流を用いたCVD法によるMoO₂ナノワイヤの成長メカニズムおよびその硫化によるMoS₂の合成

  後藤真菜美, 柳瀬隆, 長浜太郎, 島田敏宏  応用物理学会秋季学術講演会講演予稿集(CD-ROM)  80th-  2019
• アルカリ金属加熱処理によるダイヤモンドNV中心の蛍光の変化

  竹鼻大貴, 田村貴大, 柳瀬隆, 長浜太郎, 島田敏宏  応用物理学会秋季学術講演会講演予稿集(CD-ROM)  80th-  2019
• ポリアセン類を前駆体とした高圧処理による新規炭素固体の合成

  山根伊知郎, 柳瀬隆, 長浜太郎, 島田敏宏  応用物理学会秋季学術講演会講演予稿集(CD-ROM)  80th-  2019
• Fe₃O₄(001)/MgO(001)/Fe(001)強磁性トンネル接合における負のトンネル磁気抵抗効果

  安井彰馬, 岡林潤, 柳瀬隆, 島田敏宏, 長浜太郎  日本磁気学会学術講演概要集  43rd-  2019
• CoFe₂O₄/Pt界面における磁気近接効果の電圧制御

  野土翔登, 山本匠, 柳瀬隆, 島田敏宏, 長浜太郎  日本磁気学会学術講演概要集  43rd-  2019
• スピネル型フェライト薄膜を含むスピントロニクスデバイスの開発

  長浜太郎, 高橋望, 安井彰馬, 島田敏宏  日本表面真空学会東北・北海道支部学術講演会講演予稿集  2018-  2019
• 窒化ホウ素ナノチューブCVD合成のナノ粒子触媒の探索

  島田敏宏, 白鳥達也, 山本靖典, 柳瀬隆, 長浜太郎  セラミックス基礎科学討論会講演要旨集  57th-  2019
• CVD法によるMoS₂ナノチューブの合成

  島田敏宏, 後藤真菜美, 張美斉, 柳瀬隆, 長浜太郎  日本表面真空学会東北・北海道支部学術講演会講演予稿集  2018-  2019
• Fe₃O₄(110)/非磁性金属/Feの磁化過程および非磁性層依存性

  大森圭太, 川井智博, 柳瀬隆, 島田敏宏, 長浜太郎  応用物理学会北海道支部/日本光学会北海道支部合同学術講演会講演予稿集  53rd-14th-  2018
• CoFe₂O₄/Pt/CoFe₂O₄三層膜におけるスピンホール磁気抵抗効果

  山本匠, 柳瀬隆, 島田敏宏, 長浜太郎  応用物理学会北海道支部/日本光学会北海道支部合同学術講演会講演予稿集  53rd-14th-  2018
• 新規Fe_1-xSn_x合金薄膜の結晶構造と磁気特性

  後藤有貴, 柳瀬隆, 島田敏宏, 長浜太郎  応用物理学会北海道支部/日本光学会北海道支部合同学術講演会講演予稿集  53rd-14th-  2018
• Fe₃O₄(100)電極とMgAlO_x(100)バリアを用いた磁気トンネル接合の作製と評価

  山本雄太, 柳瀬隆, 島田敏宏, 長浜太郎  応用物理学会北海道支部/日本光学会北海道支部合同学術講演会講演予稿集  53rd-14th-  2018
• 化学気相成長法によるFeナノワイヤの作製と磁気抵抗効果

  柳瀬隆, 荻原初夏, 長浜太郎, 長島一樹, 柳田剛, 島田敏宏  応用物理学会春季学術講演会講演予稿集(CD-ROM)  65th-  2018
• Fe/AlO_x/Fe₃O₄磁気トンネル接合における逆磁気キャパシタンス効果

  海住英生, 長浜太郎, 佐々木駿, 島田敏宏, 北上修, 三澤貴浩, 藤岡正弥, 西井準治, XIAO Gang  日本物理学会講演概要集(CD-ROM)  73-  (1)  2018
• Pt/CoFe₂O₄二層膜における磁気近接効果とその膜厚・温度依存性

  野土翔登, 山本匠, 柳瀬隆, 島田敏宏, 長浜太郎  応用物理学会春季学術講演会講演予稿集(CD-ROM)  65th-  2018
• MoS₂単層膜の成長条件・処理方法による蛍光スペクトルの変化

  島田敏宏, 上原史也, 柳瀬隆, 長浜太郎  日本表面科学会東北・北海道支部講演会講演予稿集  2017-  2018
• 金属酸化物ナノ粒子を触媒としたMoS₂ナノチューブCVD成長

  WENG Mengting, ZHANG Meiqi, 柳瀬隆, 上原史也, 長浜太郎, 島田敏宏  日本セラミックス協会年会講演予稿集(CD-ROM)  2018-  2018
• 窒素含有アセンの合成とフラックス蒸発法による単結晶成長

  酒井宣彦, 柳瀬隆, 長浜太郎, 島田敏宏  応用物理学会秋季学術講演会講演予稿集(CD-ROM)  79th-  2018
• CoFe₂O₄/Pt/CoFe₂O₄三層膜のスピンホール磁気抵抗効果

  山本匠, 野土翔登, 柳瀬隆, 島田敏宏, 長浜太郎  日本磁気学会学術講演概要集  42nd-  2018
• 磁気近接効果を用いたPt/CoFe₂O₄超薄膜の磁気特性評価

  野土翔登, 山本匠, 柳瀬隆, 島田敏宏, 長浜太郎  日本磁気学会学術講演概要集  42nd-  2018
• フラックス蒸発法による有機半導体単結晶成長と応用

  島田敏宏, 酒井宣彦, LI Mingzhe, YANG Xiaoran, 長浜太郎, 柳瀬隆  応用物理学会秋季学術講演会講演予稿集(CD-ROM)  79th-  2018
• プラズマCVDによる窒化ホウ素合成における原料と触媒の影響

  白鳥達也, 高見拓哉, 三浦拓也, 柳瀬隆, 長浜太郎, 山本靖典, 島田敏宏  応用物理学会秋季学術講演会講演予稿集(CD-ROM)  79th-  2018
• 分子結晶への超高圧印加による新規窒素含有炭素材料の探索

  山根伊知郎, 柳瀬隆, 長浜太郎, 島田敏宏  応用物理学会秋季学術講演会講演予稿集(CD-ROM)  79th-  2018
• 窒素含有アセン結晶への高圧印加による新規窒素含有炭素材料の探索

  山根伊知郎, 柳瀬隆, 長浜太郎, 島田敏宏  高圧討論会講演要旨集  59th-  2018
• Mn-Fe酸化物ナノ粒子のカーボンナノチューブ成長触媒活性

  柳瀬隆, 白鳥達也, 三浦拓也, WENG Mengting, 長浜太郎, 島田敏宏  セラミックス基礎科学討論会講演要旨集  56th-  2018
• 有機分子結晶の高圧処理による新規窒素含有炭素材料の合成

  山根伊知郎, 柳瀬隆, 長浜太郎, 島田敏宏  日本セラミックス協会秋季シンポジウム講演予稿集(CD-ROM)  31st-  2018
• MoS₂のCVD成長-触媒ナノ粒子を用いたナノチューブ成長と薄膜の不純物・欠陥の解析

  島田敏宏, 上原史也, 後藤真菜美, 田村貴大, 柳瀬隆, 長浜太郎  日本表面真空学会学術講演会講演要旨集  2018-  2018
• グラッシーカーボン薄膜の作製と光・電気特性の評価

  上部宏晃, 長谷川幸樹, 柳瀬隆, 長浜太郎, 島田敏宏  セラミックス基礎科学討論会講演要旨集  55th-  2017
• 立方晶窒化ホウ素の表面科学と薄膜成長

  高見拓哉, 田村貴大, 柳瀬隆, 長浜太郎, 島田敏宏  セラミックス基礎科学討論会講演要旨集  55th-  2017
• 化学気相成長法によるFeナノワイヤの作製と特性評価

  荻原初夏, 柳瀬隆, 長浜太郎, 島田敏宏  セラミックス基礎科学討論会講演要旨集  55th-  2017
• MoS₂ナノチューブ成長における触媒粒子サイズ効果

  MENGTING Weng, 柳瀬隆, 長浜太郎, 島田敏宏  応用物理学会春季学術講演会講演予稿集(CD-ROM)  64th-  2017
• MgO(100)基板上のエピタキシャルSn_xFe_3-xO₄薄膜

  荒木真人, 梶田博樹, 柳瀬隆, 島田敏宏, 長浜太郎  応用物理学会春季学術講演会講演予稿集(CD-ROM)  64th-  2017
• 立方晶窒化ホウ素高指数面の作製とダイヤモンドヘテロ成長

  田村貴大, 高見拓哉, 柳瀬隆, 長浜太郎, 島田敏宏  応用物理学会春季学術講演会講演予稿集(CD-ROM)  64th-  2017
• 化学気相成長法によるFeナノワイヤの作製と評価

  荻原初夏, 柳瀬隆, 長浜太郎, 島田敏宏  日本セラミックス協会年会講演予稿集(CD-ROM)  2017-  2017
• 立方晶窒化ホウ素高指数面の作製とダイヤモンドヘテロ成長

  高見拓哉, 田村貴大, 柳瀬隆, 長浜太郎, 島田敏宏  日本セラミックス協会年会講演予稿集(CD-ROM)  2017-  2017
• 化学気相蒸着法によるMo_xNb_1-xS₂薄膜の作製

  渡邉翔, 上原史也, 柳瀬隆, 長浜太郎, 島田敏宏  日本セラミックス協会年会講演予稿集(CD-ROM)  2017-  2017
• 遷移金属ダイカルコゲナイドのCVD精密制御

  島田敏宏, 渡邉翔, 上原史也, WENG Mengting, 柳瀬隆, 長浜太郎  日本表面科学会東北・北海道支部講演会講演予稿集  2016-  2017
• 立方晶窒化ホウ素の高指数表面の作製と性質

  島田敏宏, 田村貴大, 高見拓哉, 柳瀬隆, 長浜太郎  日本表面科学会東北・北海道支部講演会講演予稿集  2016-  2017
• Fe/AlO_x/Fe₃O₄における逆トンネル磁気キャパシタンス効果

  海住英生, 長浜太郎, 佐々木駿, 島田敏宏, 北上修, 三澤貴浩, 藤岡正弥, 西井準治, XIAO Gang  日本磁気学会学術講演概要集  41st-  2017
• 立方晶窒化ホウ素の任意指数面単結晶基板の作製と表面反応の観察

  田村貴大, 高見拓哉, 柳瀬隆, 長浜太郎, 島田敏宏  応用物理学会秋季学術講演会講演予稿集(CD-ROM)  78th-  2017
• CoFe₂O₄/Pt/CoFe₂O₄サンドイッチ膜におけるスピンホール磁気抵抗効果

  山本匠, 柳瀬隆, 島田敏宏, 長浜太郎  応用物理学会秋季学術講演会講演予稿集(CD-ROM)  78th-  2017
• CVD法によるMoS₂単層膜の作製と硫黄アニールによる効果

  上原史也, 柳瀬隆, 長浜太郎, 島田敏宏  応用物理学会秋季学術講演会講演予稿集(CD-ROM)  78th-  2017
• MgO(100)基板上のエピタキシャルSn_xFe_3-xO₄薄膜の作製

  荒木真人, 梶田博樹, 柳瀬隆, 島田敏宏, 長浜太郎  応用物理学会北海道支部/日本光学会北海道支部合同学術講演会講演予稿集  52nd-13th-  2017
• γ-Al₂O₃バッファー層を用いたSi基板上のFe₃O₄作製

  高橋望, HUMINIUC Teoder, 山本雄太, 柳瀬隆, 島田敏宏, 廣畑貴文, 長浜太郎  応用物理学会北海道支部/日本光学会北海道支部合同学術講演会講演予稿集  52nd-13th-  2017
• 有機デバイスにおける水蒸気バリア性の高精度・高速測定と標準化技術 (特集 有機ELの長寿命化,欠陥対策に欠かせない ハイバリアフィルムおよび封止材料のバリア性向上)

  島田 敏宏, 柳瀬 隆, 吉田 肇, 楯 和也, 今村 貴浩, 細岡 也寸志  Material stage  16-  (8)  56  -60  2016/11
• ナノ粒子を触媒とした鉄ナノワイヤの作製

  柳瀬隆, 荻原初夏, 三浦拓也, WENG Mengting, 長浜太郎, 島田敏宏  応用物理学会春季学術講演会講演予稿集(CD-ROM)  63rd-  2016
• 固体挿入プラズマCVD法によるBiを含む新規炭素系物質の合成

  田村貴大, 柳瀬隆, 長浜太郎, 島田敏宏  応用物理学会春季学術講演会講演予稿集(CD-ROM)  63rd-  2016
• 有機半導体に対する変形効果の計算機シミュレーション

  島田敏宏, 山川貴恵, 柳瀬隆, 長浜太郎  応用物理学会春季学術講演会講演予稿集(CD-ROM)  63rd-  2016
• Fe₃O₄(110)を用いた強磁性トンネル接合の磁気伝導特性

  佐々木駿, 長浜太郎, 島田敏宏  応用物理学会春季学術講演会講演予稿集(CD-ROM)  63rd-  2016
• 大気圧CVDによるFeナノワイヤの合成

  島田敏宏, 荻原初夏, 翁夢てい, 長浜太郎, 柳瀬隆  日本表面科学会東北・北海道支部講演会講演予稿集  2015-  2016
• Fe₃O₄電極とMgOバリアを用いたトンネル磁気抵抗素子の作製

  山本雄太, 佐々木駿, 柳瀬隆, 島田敏宏, 長浜太郎  日本磁気学会学術講演概要集  40th-  2016
• Fe₃O₄(110)/非磁性金属/Fe系多層膜における飽和磁場の非磁性金属層膜厚に対する依存性

  大森圭太, 川井智博, 柳瀬隆, 島田敏宏, 長浜太郎  日本磁気学会学術講演概要集  40th-  2016
• 固体挿入法により合成されたEu-B多結晶ダイヤモンドの電気特性の評価

  高見拓哉, 田村貴大, 柳瀬隆, 長浜太郎, 島田敏宏  応用物理学会秋季学術講演会講演予稿集(CD-ROM)  77th-  2016
• 化学気相蒸着法によるMo_xNb_1-xS₂薄膜の作製

  渡邉翔, 上原史也, 柳瀬隆, 長浜太郎, 島田敏宏  応用物理学会秋季学術講演会講演予稿集(CD-ROM)  77th-  2016
• 化学気相成長法によるFeナノワイヤの作製と特性評価

  荻原初夏, 柳瀬隆, 長浜太郎, 長島一樹, 柳田剛, 島田敏宏  応用物理学会秋季学術講演会講演予稿集(CD-ROM)  77th-  2016
• 新規グラッシーカーボン薄膜の作製と光学特性および電気特性の評価

  上部宏晃, 長谷川幸樹, 柳瀬隆, 長浜太郎, 島田敏宏  応用物理学会秋季学術講演会講演予稿集(CD-ROM)  77th-  2016
• 三次元ネットワーク高分子を用いた立方晶窒化ホウ素結晶上への新規炭素薄膜の合成

  島田敏宏, 長谷川幸樹, 柳瀬隆, 長浜太郎, 山口誠  日本セラミックス協会秋季シンポジウム講演予稿集(CD-ROM)  29th-  2016
• 中・遠赤外メタマテリアルを目指す耐火物薄膜の微細加工技術の開発

  島田敏宏, 高見拓哉, 田村貴大, 柳瀬隆, 長浜太郎  日本セラミックス協会秋季シンポジウム講演予稿集(CD-ROM)  29th-  2016
• Fe₃O₄(110)を用いた磁気トンネル接合の伝導特性評価

  佐々木駿, 長浜太郎, 島田敏宏  応用物理学会北海道支部/日本光学会北海道支部合同学術講演会講演予稿集  51st-12th-  2016
• 層状金属カルコゲナイドCVD成長におけるナノ形態制御

  島田敏宏, 柳瀬隆, 渡邉翔, WENG Mengting  表面科学学術講演会講演要旨集  35th-  (0)  1  -2  2015/12/01  [Not refereed][Not invited]
   

  層状金属カルコゲナイドは表面にダングリングボンドを持たず、さまざまな物性と仕事関数を持つ物質であるため、ナノ構造化によりデバイス応用が期待される。本発表では、我々が行っている流路分離型CVD成長による成長制御と、CNT等との複合材料化について報告する。
• Computational Studies on Physical Properties of Flexible Semiconductor Materials

  島田敏宏, XIE Wei, 山川貴恵, 柳瀬隆, 長浜太郎  日本写真学会誌  78-  (4)  248  -250  2015/11/25  [Not refereed][Not invited]
   

  <p>We report two computational studies about mechanically deformable semiconductors for flexible electronics. First we report the effect of compression and stretching of organic semiconductors estimated by molecular dynamics. Second, we present first principle electronic structure studies of hexagonal boron nitride doped with carbon.</p>
• γ‐Al₂O₃エピタキシャル薄膜を用いたSiへのスピン注入素子の作製

  高橋望, 柳瀬隆, 長浜太郎, 島田敏宏  結晶成長国内会議予稿集(CD-ROM)  45th-  ROMBUNNO.20PS20  2015/10/19  [Not refereed][Not invited]
  
• 炭素ドープh‐BNの電子状態計算

  XIE Wei, 柳瀬隆, 長浜太郎, 島田敏宏  応用物理学会秋季学術講演会講演予稿集(CD-ROM)  76th-  ROMBUNNO.15P-2T-18  2015/08/31  [Not refereed][Not invited]
  
• 化学気相蒸着法によるNbS₂結晶薄膜の作製

  渡邉翔, WENG Mengting, 柳瀬隆, 長浜太郎, 島田敏宏  応用物理学会秋季学術講演会講演予稿集(CD-ROM)  76th-  ROMBUNNO.13P-1A-12  2015/08/31  [Not refereed][Not invited]
  
• ポリマー焼成法によるナノダイヤモンドの合成

  柳瀬隆, 長谷川幸樹, 上部宏晃, 長浜太郎, 島田敏宏  応用物理学会秋季学術講演会講演予稿集(CD-ROM)  76th-  ROMBUNNO.14A-2Q-6  2015/08/31  [Not refereed][Not invited]
  
• 反応性MBE法によるエピタキシャルSn_xFe_3‐xO₄薄膜の作製

  荒木真人, 柳瀬隆, 島田敏宏, 長浜太郎  日本磁気学会学術講演概要集  39th-  131  2015/08/25  [Not refereed][Not invited]
  
• CoFe₂O₄を用いた垂直磁化型スピンフィルター素子の作製

  梶田博樹, 柳瀬隆, 島田敏宏, 長浜太郎  日本磁気学会学術講演概要集  39th-  169  2015/08/25  [Not refereed][Not invited]
  
• (CH)_nポリマーとAl₂O₃(0001)との反応によるAl₄C₃のエピタキシャル成長

  大見浩輔, 柳瀬隆, 長谷川幸樹, 長浜太郎, 島田敏宏  応用物理学会春季学術講演会講演予稿集(CD-ROM)  62nd-  ROMBUNNO.11A-D8-1  2015/02/26  [Not refereed][Not invited]
  
• 化学気相蒸着法による六角形NbS₂フレークの合成

  柳瀬隆, 渡邉翔, WENG Mengting, 長浜太郎, 島田敏宏  応用物理学会春季学術講演会講演予稿集(CD-ROM)  62nd-  ROMBUNNO.12P-D8-14  2015/02/26  [Not refereed][Not invited]
  
• ナノワイヤのCVD成長における酸化物基板上の核形成の影響

  島田敏宏, 川人愛子, 田村貴大, XIE W, 石岡準也, 柴山環樹, 渡辺精一, 柳瀬隆, 長浜太郎  セラミックス基礎科学討論会講演要旨集  53rd-  204  2015/01/08  [Not refereed][Not invited]
  
• スピネルフェライト/Cr/Fe三層膜におけるFe層の保磁力の増大とCr膜厚依存性

  長浜太郎, 川井智博, 島田敏宏  応用物理学会秋季学術講演会講演予稿集(CD-ROM)  76th-  2015
• エピタキシャルFe₃O₄/AlO_x/Feトンネル接合の伝導特性評価

  佐々木駿, 長浜太郎, 島田敏宏  日本磁気学会学術講演概要集  39th-  2015
• 熱CVD法による酸化物基板上へのFeナノワイヤの作製

  川人愛子, 柳瀬隆, 石岡準也, 柴山環樹, 渡辺精一, 長浜太郎, 島田敏宏  応用物理学会秋季学術講演会講演予稿集(CD-ROM)  75th-  ROMBUNNO.19P-PA4-3  2014/09/01  [Not refereed][Not invited]
  
• 層状金属カルコゲナイドのCVD:成長機構と自発的ナノ構造形成

  柳瀬隆, 渡辺翔, 橋本遊, 沓澤大, 長浜太郎, 島田敏宏  応用物理学会秋季学術講演会講演予稿集(CD-ROM)  75th-  ROMBUNNO.18P-B3-6  2014/09/01  [Not refereed][Not invited]
  
• ダイヤモンドのプラズマCVD成長における固体挿入ドーピング

  田村貴大, 柳瀬隆, 長浜太郎, 島田敏宏  応用物理学会秋季学術講演会講演予稿集(CD-ROM)  75th-  ROMBUNNO.17A-A8-6  2014/09/01  [Not refereed][Not invited]
  
• 有機薄膜形成過程の分子動力学シミュレーション

  島田敏宏, 田村貴大, 柳瀬隆, 長浜太郎  応用物理学会秋季学術講演会講演予稿集(CD-ROM)  75th-  ROMBUNNO.17A-A5-1  2014/09/01  [Not refereed][Not invited]
  
• 熱CVD法による酸化物基板上へのFeナノワイヤの作製

  川人愛子, 柳瀬隆, 遠堂敬, 石岡準也, 柴山環樹, 渡辺精一, 長浜太郎, 島田敏宏  日本セラミックス協会秋季シンポジウム講演予稿集(CD-ROM)  27th-  ROMBUNNO.2P036  2014/08/25  [Not refereed][Not invited]
  
• Fe₃O₄/Cr/Fe多層膜におけるFe層の磁化過程

  長浜太郎, 川井智博, 高橋望, 柳瀬隆, 島田敏宏  日本磁気学会学術講演概要集  38th-  294  2014/08/19  [Not refereed][Not invited]
  
• CS-1-5 Synthesis of Layered Material Semiconductor Particles for Organic-Inorganic Hybrid Electronics

  Shimada Toshihiro  Proceedings of the IEICE General Conference  2014-  (2)  "S  -8"-"S-9"  2014/03/04
• 酸化物高指数表面の鉄ナノワイヤCVDに対する触媒機能

  島田敏宏, 川人愛子, 柳瀬隆, 長浜太郎  セラミックス基礎科学討論会講演要旨集  52nd-  181  2014/01/09  [Not refereed][Not invited]
  
• ダイヤモンド前駆体ポリマーのグリニャール反応による合成

  大見浩輔, 柳瀬隆, 村谷直紀, 長浜太郎, 島田敏宏  応用物理学会北海道支部・日本光学会北海道地区合同学術講演会講演予稿集  49th-10th-  66  2013/12/09  [Not refereed][Not invited]
  
• 触媒を用いた熱CVD法によるMoS_xナノワイヤの作製

  橋本遊, 沓澤大, 柳瀬隆, 長浜太郎, 島田敏宏  応用物理学会北海道支部・日本光学会北海道地区合同学術講演会講演予稿集  49th-10th-  12  2013/12/09  [Not refereed][Not invited]
  
• Fabrication and Physical Properties of Organic Tricolor Superlattice

  Takashi Yanase, Toshihiro Shimada  ELECTRONICS AND COMMUNICATIONS IN JAPAN  96-  (12)  32  -36  2013/12  [Not refereed][Not invited]
   

  By combining the two concepts of superlattices and organic amorphous materials, we attempted to fabricate a new material that exhibits photo-switching piezoelectric properties. In order to utilize the merits of amorphous materials that can be deposited quickly, we started by building equipment specialized for the fabrication of organic amorphous superlattices. Using this equipment, we fabricated a p-type semiconductor/piezoelectric polymer/n-type semiconductor superlattice that responded to photoirradiation both electrically and mechanically. (c) 2013 Wiley Periodicals, Inc. Electron Comm Jpn, 96(12): 32-36, 2013; Published online in Wiley Online Library (wileyonlinelibrary.com). DOI 10.1002/ecj.11556
• ダイヤモンド前駆体ポリマーのグリニャール反応による合成

  大見浩輔, 柳瀬隆, 村谷直紀, 長浜太郎, 島田敏宏  ダイヤモンドシンポジウム講演要旨集  27th-  178  -179  2013/11/19  [Not refereed][Not invited]
  
• ダイヤモンド前駆体ポリマーの精密合成とその評価

  柳瀬隆, 村谷直紀, 大見浩輔, 島田敏宏  ダイヤモンドシンポジウム講演要旨集  27th-  70  -71  2013/11/19  [Not refereed][Not invited]
  
• 熱CVD法によるFeナノワイヤの作製

  川人愛子, 柳瀬隆, 長浜太郎, 島田敏宏  応用物理学会秋季学術講演会講演予稿集(CD-ROM)  74th-  ROMBUNNO.18P-C11-13  2013/08/31  [Not refereed][Not invited]
  
• 熱CVD法によるMoS_xナノワイヤの作製

  橋本遊, 沓澤大, 柳瀬隆, 長浜太郎, 島田敏宏  応用物理学会秋季学術講演会講演予稿集(CD-ROM)  74th-  ROMBUNNO.19P-P2-8  2013/08/31  [Not refereed][Not invited]
  
• ポリマー焼成法を用いたダイヤモンドの新規ドーピング手法の開発

  村谷直紀, 柳瀬隆, 大見浩輔, 長浜太郎, 島田敏宏  日本セラミックス協会秋季シンポジウム講演予稿集(CD-ROM)  26th-  ROMBUNNO.2P060  2013/08/28  [Not refereed][Not invited]
  
• 熱化学気相蒸着法による鉄ナノワイヤーの作製

  柳瀬隆, 長浜太郎, 島田敏宏, 川人愛子  日本セラミックス協会秋季シンポジウム講演予稿集(CD-ROM)  26th-  ROMBUNNO.2P059  2013/08/28  [Not refereed][Not invited]
  
• 有機三色超格子による光応答するピエゾ薄膜の作製

  柳瀬 隆, 島田 敏宏  Molecular electronics and bioelectronics  24-  (2)  97(35)  -100(38)  2013/05/30  [Not refereed][Not invited]
  
• 蒸着で形成したC₆₀‐p型有機半導体接合の光電子分光による評価(2)

  土田裕也, 柳瀬隆, 長浜太郎, 島田敏宏  応用物理学会春季学術講演会講演予稿集(CD-ROM)  60th-  ROMBUNNO.28P-G13-1  2013/03/11  [Not refereed][Not invited]
  
• 電気化学エッチングで作成したグラファイトエッジの評価

  久保田翔生, 柳瀬隆, 長浜太郎, 島田敏宏  応用物理学会春季学術講演会講演予稿集(CD-ROM)  60th-  ROMBUNNO.27A-G12-4  2013/03/11  [Not refereed][Not invited]
  
• 溶液合成した前駆体のMoS₂への変化過程

  島田敏宏, 橋本遊, 柳瀬隆, 長浜太郎, 米澤徹  応用物理学会春季学術講演会講演予稿集(CD-ROM)  60th-  ROMBUNNO.27P-G12-5  2013/03/11  [Not refereed][Not invited]
  
• CoFe₂O₄/Cr/Fe系の磁化過程のCr膜厚依存性

  川井智博, 平谷俊悟, 長浜太郎, 島田敏宏  日本磁気学会学術講演概要集  37th-  2013
• MgO-MTJ/Pt/CoFe₂O₄の作製と磁気伝導特性

  高橋望, 平谷俊悟, 長浜太郎, 島田敏宏  日本磁気学会学術講演概要集  37th-  2013
• Si上でのγ-Al₂O₃薄膜エピタキシャル成長とそのスピン特性

  渡辺雄介, 高橋望, 長浜太郎, 島田敏宏  日本磁気学会学術講演概要集  37th-  2013
• CoCr₂O₄スピネルを用いたトンネル磁気抵抗素子の作製

  楯和也, 松田悠弥, 長浜太郎, 島田敏宏  日本磁気学会学術講演概要集  37th-  2013
• CoFe₂O₄薄膜を用いた電圧誘起磁気異方性測定の試み

  平谷俊悟, 長浜太郎, 島田敏宏  日本磁気学会学術講演概要集  37th-  2013
• Orientation control and angle-resolved photoemission studies of organic epitaxial thin films on bismuth-terminated silicon surfaces

  Manabu Ohtomo, Yuya Tsuchida, Tetsuya Hasegawa, Toshihiro Shimada  Journal of the Vacuum Society of Japan  56-  (1)  1  -10  2013  [Not refereed][Not invited]
   

  The angle-resolved photoemission studies (ARPES) of organic semiconductors is the key to understand fundamental parameters in the carrier transport, such as transfer integrals, effective mass, and carrier-phonon coupling constant. The ARPES of organic semiconductors, however, requires well-defined, single-crystalline and highly conductive samples. Since organic semiconductors have extremely low conductivity with low symmetry unit cells, the number of ARPES research was limited, which was an obstruction to developing synthesis policy for high mobility materials. In this review, we will summarize one of the successful strategy for preparing quasi-singly-oriented and highly-conductive sample for ARPES. We will demonstrate that bismuth terminated silicon surface is an ideal surface to grow epitaxial organic films with practically important "standing" orientation. It was also confirmed that quasi-single crystalline film was grown by using vicinal surfaces and reducing surface symmetry. We will also present the band dispersion results with key parameters and discuss future prospects.
• 高品質Fe₃O₄エピタキシャル膜の構造及び磁気特性

  松田悠弥, 楯和也, 平谷俊悟, 渡辺雄介, 長浜太郎, 長浜太郎, 島田敏宏  応用物理学関係連合講演会講演予稿集(CD-ROM)  59th-  ROMBUNNO.17A-DP1-9  2012/02/29  [Not refereed][Not invited]
  
• 5-104 Prospects of Demonstration Experiment in Fundamental Chemical Classes : Examples of Cheimcal Themodynamics and Inorganic Chemistry for Freshmen and Sophomore

  Shimada Toshihiro  工学教育研究講演会講演論文集  23-  (59)  88  -89  2011/08/22
• 三色超格子を用いた光スイッチング可能な圧電性薄膜の作製

  柳瀬隆, 長谷川哲也, 島田敏宏  応用物理学会学術講演会講演予稿集(CD-ROM)  72nd-  ROMBUNNO.1P-D-5  2011/08/16  [Not refereed][Not invited]
  
• Si表面修飾の最適化によるDBTTF薄膜の成長制御

  土田裕也, 大伴真名歩, 長浜太郎, 米沢徹, 島田敏宏  応用物理学会学術講演会講演予稿集(CD-ROM)  72nd-  ROMBUNNO.30A-V-9  2011/08/16  [Not refereed][Not invited]
  
• 有機半導体分子へのマイクロ波照射による新しい炭素固体の合成

  富田潤, 長浜太郎, 島田敏宏, 島田敏宏  応用物理学会学術講演会講演予稿集(CD-ROM)  72nd-  ROMBUNNO.31A-ZF-4  2011/08/16  [Not refereed][Not invited]
  
• 電気化学的還元によるグラファイト上でのグラフェンエッジの作製

  久保田翔生, 長浜太郎, 米澤徹, 島田敏宏  応用物理学会学術講演会講演予稿集(CD-ROM)  72nd-  ROMBUNNO.30P-ZT-1  2011/08/16  [Not refereed][Not invited]
  
• フラックス法による銅フタロシアニン結晶の作製

  生田裕, 土田裕也, 村谷直紀, 長浜太郎, 島田敏宏, 島田敏宏  応用物理学会学術講演会講演予稿集(CD-ROM)  72nd-  ROMBUNNO.30A-V-8  2011/08/16  [Not refereed][Not invited]
  
• Preface for Special Issue on Growth and Novel Functions of Nanocrystals(Preface)

  Shimada Toshihiro, Yonezawa Tetsu  Journal of the Japanese Association of Crystal Growth  37-  (4)  265  -265  2011/01  [Not refereed][Not invited]
  
• 有機半導体における欠陥周囲の電子状態の計算化学的評価

  島田敏宏, 大伴真名歩, 柳瀬隆, 長谷川哲也  応用物理学会学術講演会講演予稿集(CD-ROM)  71st-  ROMBUNNO.15P-H-2  2010/08/30  [Not refereed][Not invited]
  
• Closing remarks and future prospect

  SHIMADA Toshihiro  電気学会研究会資料. EFM, 電子材料研究会  2010-  (1)  57  -58  2010/05/21
• Highly Sensitive and Rapid Measurement of Gas Barrier Properties of Flexible Films and Sealing Resins Based on a Low Temperature Trap and Mass Spectroscopy

  TAKAHASHI Yoshikazu, SHIMADA Toshihiro, KANNO Toshiyuki  IEICE technical report  110-  (59)  11  -14  2010/05/20  

  We developed a novel apparatus for the measurement of the gas barrier properties of high barrier films. The measurement principle is based on the use of a low temperature trap to transfer the permeated vapor from the sample space under atmospheric pressure to the mass spectrometer situated in an ultrahigh vacuum. We have demonstrated that the sensitivity, dynamic range and lead time for the measurement can be significantly improved from those previously reported. It was revealed that the diffusion time in a polymer film must be considered in the measurement of high barrier films.
• Siを用いた電気二重層FET

  柳瀬隆, 島田敏宏, 長谷川哲也  応用物理学関係連合講演会講演予稿集(CD-ROM)  57th-  ROMBUNNO.19P-ZM-7  2010/03/03  [Not refereed][Not invited]
  
• 磁気円二色性によるC₆₀-Co化合物/Ni積層薄膜の界面磁気状態分光

  松本吉弘, 圓谷志郎, 島田敏宏, 楢本洋, 三谷誠司, 高梨弘毅, 高梨弘毅, 横山利彦, 境誠司  応用物理学会学術講演会講演予稿集(CD-ROM)  71st-  2010
• C₆₀-Co化合物/Ni積層薄膜における磁気交換結合

  松本吉弘, 圓谷志郎, 島田敏宏, 楢本洋, 三谷誠司, 高梨弘毅, 横山利彦, 境誠司  日本磁気学会学術講演概要集  34th-  2010
• 25pZK-3 Epitaxial growth of organic semiconductors and angle resolved photoemission spectroscopy at various temperatures

  Shimada Toshihiro  Meeting abstracts of the Physical Society of Japan  64-  (2)  805  -805  2009/08/18
• X-ray absorption spectroscopy and magnetic circular dichroism in codeposited C-60-Co films with giant tunnel magnetoresistance (vol 470, pg 244, 2009)

  Yoshihiro Matsumoto, Seiji Sakai, Yasumasa Takagi, Takeshi Nakagawa, Toshihiko Yokoyama, Toshihiro Shimada, Seiji Mitani, Koki Takanashi, Hiroshi Naramoto, Yoshihito Maeda  CHEMICAL PHYSICS LETTERS  474-  (1-3)  238  -238  2009/05  [Not refereed][Not invited]
  
• 30pTL-1 Transport properties and electronic states of anatase Ti_<1-x>W_xO_2 epitaxial thin films

  Takeuchi U., Hitosugi T., Tsuruhama T., Chikamatsu A., Kumigashira H., Oshima M., Hirose Y., Shimada T., Hasegawa T.  Meeting abstracts of the Physical Society of Japan  64-  (1)  666  -666  2009/03/03
• 軟X線磁気円二色性分光によるC₆₀-Co共蒸着薄膜のスピン状態解析

  松本吉弘, 境誠司, 圓谷志郎, 中川剛志, 高木康多, 横山利彦, 永松伸一, 島田敏宏, 楢本洋, 三谷誠司, 高梨弘毅, 高梨弘毅, 前田佳均, 前田佳均  日本磁気学会学術講演概要集  33rd-  2009
• 巨大トンネル磁気抵抗効果を示すC₆₀-Co共蒸着薄膜のスピン状態解析

  松本吉弘, 境誠司, 楢本洋, 中川剛志, 高木康多, 横山利彦, 島田敏宏, 三谷誠司, 三谷誠司, 高梨弘毅, 高梨弘毅, 前田佳均, 前田佳均  応用物理学関係連合講演会講演予稿集  56th-  (2)  2009
• 巨大トンネル磁気抵抗効果に影響を及ぼすC₆₀-Co化合物の電子/スピン状態

  松本吉弘, 境誠司, 圓谷志郎, 中川剛志, 高木康多, 横山利彦, 永松伸一, 島田敏宏, 楢本洋, 三谷誠司, 高梨弘毅, 高梨弘毅, 前田佳均, 前田佳均  応用物理学会学術講演会講演予稿集  70th-  (2)  2009
• 軟X線磁気円二色性分光によるC₆₀-Co共蒸着薄膜のスピン状態解析

  松本吉弘, 境誠司, 中川剛志, 高木康多, 横山利彦, 永松伸一, 島田敏宏, 楢本洋, 三谷誠司, 高梨弘毅, 高梨弘毅, 前田佳均, 前田佳均  分子科学討論会講演プログラム&要旨(Web)  3rd-  2009
• Carrier compensation mechanism of highly conductive anatase Ti 0.94Nb0.06O2 epitaxial thin films

  Hiroyuki Nogawa, Taro Hitosugi, Hideyuki Kamisaka, Kouichi Yamashita, Akira Chikamatsu, Kouhei Yoshimatsu, Hiroshi Kumigashira, Masaharu Oshima, Syoichiro Nadao, Yutaka Furubayashi, Yasushi Hirose, Toshihiro Shimada, Tetsuya Hasegawa  Materials Research Society Symposium Proceedings  1074-  41  -45  2008/12/01  [Not refereed][Not invited]
   

  We investigated electrical conduction of anatase Ti0.94Nb 0.06O2 (TNO) epitaxial thin films in relation to oxygen defects generated by post-annealing. Annealing of TNO in oxygen was found to cause dramatic decreases in ne. Resonant photoemission spectroscopy measurements revealed that a deep acceptor state just above the top of valence band evolves, synchronized with the decrease of ne. We proposed that the acceptor state originates from interstitial oxygen atoms combined with Nb dopants and compensates electron carriers. © 2008 Materials Research Society.
• 20aTA-5 Epitaxial Growth of Graphite on Insulating Substrate (I)

  Shimada T., Hanzawa A., Noguchi T., Hasegawa T.  Meeting abstracts of the Physical Society of Japan  63-  (2)  726  -726  2008/08/25
• 26pTD-12 FI(Field Ion)-STM using superconducting Nb tip

  Shimizu R., Hitosugi T., Fukuo N., Muranaka S., Shimada T., Hashizume T., Hasegawa T.  Meeting abstracts of the Physical Society of Japan  63-  (1)  909  -909  2008/02/29
• C₆₀-Co薄膜の巨大トンネル磁気抵抗効果とスピン状態

  境誠司, 松本吉弘, 菅井勇, 三谷誠司, 高梨弘毅, 高梨弘毅, 高木康多, 中川剛志, 横山利彦, 島田敏宏, 前田佳均, 前田佳均  日本金属学会講演概要  143rd-  2008
• C₆₀-Co混合薄膜の電子・磁気状態の軟X線磁気円二色性分光

  松本吉弘, 境誠司, 楢本洋, 中川剛志, 高木康多, 横山利彦, 島田敏宏, 三谷誠司, 高梨弘毅, 高梨弘毅, 前田佳均, 前田佳均  応用物理学会学術講演会講演予稿集  69th-  (2)  2008
• C₆₀-Coハイブリッド薄膜の電子・スピン状態と巨大トンネル磁気抵抗効果

  境誠司, 松本吉弘, 菅井勇, 三谷誠司, 高梨弘毅, 高梨弘毅, 高木康多, 中川剛志, 横山利彦, 島田敏宏, 楢本洋, 岡安悟, 前田佳均, 前田佳均  日本磁気学会学術講演概要集  32nd-  2008
• 巨大トンネル磁気抵抗効果トンネル磁気抵抗効果を示すC₆₀-Co共蒸着薄膜の電子・磁気状態

  松本吉弘, 境誠司, 楢本洋, 中川剛志, 高木康多, 横山利彦, 島田敏宏, 三谷誠司, 高梨弘毅, 高梨弘毅, 前田佳均, 前田佳均  分子科学討論会講演プログラム&要旨(Web)  2nd-  2008
• Graphoepitaxy of Organic Semiconductor

  S. Ikeda, Y. Wada, K. Inaba, K. Terashima, T. Shimada, K. Saiki  Journal of the Japanese Association for Crystal Growth  35-  (4)  243  -248  2008  [Not refereed][Not invited]
  
• In-plane Orientation Control of Organic Thin Films on Amorphous Substrates

  S. Ikeda, Y. Wada, T. Shimada, K. Saiki  Journal of the Vacuum Society of Japan  50-  (12)  729  -734  2007/12  [Not refereed][Not invited]
   

  Organic field effect transistors (OFETs) have attracted much attention as key devices to realize plastic electronics. Low mobility of OFETs is one of the major problems for practical use. To improve the mobility, fabrication technique of high quality organic semiconductor thin films is important. Surfaces of gate insulators are amorphous in many cases, so that a novel technique to control in-plane orientation on such amorphous substrates is urgently required. In this report, application of "graphoepitaxy" to control the in-plane orientation is proposed. The authors discovered that organic semiconductor α-sexithiophene grows with in-plane preferred orientation on artificial periodic grooves fabricated on thermally-oxidized silicon substrates. Using this technique, the test devices of OFETs with oriented 6T thin films were prepared. The mobility has not yet been improved owing to morphological problems of the thin films. A guide to the next step of research is presented based on current imaging by conductive atomic force microscopy.
  
• 22aXJ-4 Structre and electronic structure of pentacene monolayer films epitaxially grown on step bunching substrate

  Shimada T., Ohtomo M., Hasegawa T.  Meeting abstracts of the Physical Society of Japan  62-  (2)  920  -920  2007/08/21
• 21aRB-4 HOMO band dispersion of thin-film phase pentacene

  Ohtomo Manabu, Suzuki Tadamasa, Shimada Toshihiro, Hasegawa Tetsuya  Meeting abstracts of the Physical Society of Japan  62-  (2)  846  -846  2007/08/21
• 22pWF-2 Nonmetal-metal transition in anatase Nb-doped TiO_2

  Hitosugi T, Kmisaka H, Yamashita K, Chikamatsu A, Kumigashira H, Oshima M, Nogawa H, Tsuruhama T, Hoang N. L. H, Nakao S, Furubayashi Y, Kasai J, Hirose Y, Yamada N, Shimada T, Hasegawa T  Meeting abstracts of the Physical Society of Japan  62-  (2)  600  -600  2007/08/21  [Not refereed][Not invited]
  
• 21aRJ-12 Orientation control of organic semiconductor thin-films by graphoepitaxy and application to FET devices

  Ikeda S., Wada Y., Inaba K., Ito Y., Terashima K., Shimada T., Saiki K.  Meeting abstracts of the Physical Society of Japan  62-  (1)  862  -862  2007/02/28
• 18aTG-8 Scanning tunneling microscopy using Nb tip

  Shimizu R., Hitosugi T., Fukuo N., Shimada T., Hasegawa T.  Meeting abstracts of the Physical Society of Japan  62-  (1)  872  -872  2007/02/28
• 19aZA-5 Pump-probe measurement of intramolecular energy transfer in Alq_3

  Miyata A., Ogawa N., Tamaru H., Suzuki T., Shimada T., Hasegawa T., Saiki K., Miyano K.  Meeting abstracts of the Physical Society of Japan  62-  (1)  707  -707  2007/02/28
• Spin injection from magnetic electrodes to organic semiconductors studied by transport and spectroscopic measurements

  SHIMADA Toshihiro  Extended abstracts of the ... Conference on Solid State Devices and Materials  2006-  306  -307  2006/09/13
• 26pYF-2 XMCD and transport measurements of the interface between pentacne and magnetic metals

  Shimada T., Abe H., Nogawa H., Ohtomo M., Shimizu R., Amemiya K., Hasegawa T.  Meeting abstracts of the Physical Society of Japan  61-  (2)  714  -714  2006/08/18
• 25aYC-11 Mechanism of organic graphoepitaxy based on its substrate dependence

  Ikeda S., Tsutsui K., Edura T., Inaba K., Ito Y., Terashima K., Shimada T., Wada Y., Saiki K.  Meeting abstracts of the Physical Society of Japan  61-  (2)  743  -743  2006/08/18
• 26aYH-8 XMCD measurements under magnetic field of transition metal doped TiO_2 epitaxial films

  Abe H., Shimada T., Nogawa H., Amemiya K., Ohta T., Inaba K., Hirose Y., Furubayashi Y., Yamamoto Y., Hitosugi T., Matsumoto Y., Hasegawa T.  Meeting abstracts of the Physical Society of Japan  61-  (2)  770  -770  2006/08/18
• 26aYF-7 Sub-bandgap optical response of organic semiconductors

  Ohtomo M., Shimada T., Hasegawa T.  Meeting abstracts of the Physical Society of Japan  61-  (2)  706  -706  2006/08/18
• 27pTD-6 Temperature dependence of local pseudogap structures observed by cryogenic STM/STS

  Mashima Hideki, Muranaka Shinji, Ueda Atsuki, Fukuo Noritaka, Hitosugi Taro, Shimada Toshihiro, Okada Yoshinori, Kondo Takeshi, Ikuta Hiroshi, Matsumoto Yuji, Hasegawa Tetsuya  Meeting abstracts of the Physical Society of Japan  61-  (1)  557  -557  2006/03/04
• 28pRC-5 In situ FET characteristics of AlPcCl thin films

  Kaji T., Shimada T., Ikeda S., Saiki K.  Meeting abstracts of the Physical Society of Japan  61-  (1)  832  -832  2006/03/04
• 28pRC-14 Spin-Polarized Carrier Traps of Organic Semiconductor Interfaces

  Nogawa H., Shimada T., Saiki K., Ueda A., Hirose Y., Yamamoto Y., Inaba K., Kasai J., Furubayashi Y., Hitosugi T., Hasegawa T.  Meeting abstracts of the Physical Society of Japan  61-  (1)  834  -834  2006/03/04
• 28aSC-4 XAS and XMCD measurements of transition metal doped TiO_2 epitaxial films

  Abe H., Shimada T., Nogawa H., Amemiya K., Ohta T., Inaba K., Hirose Y., Furubayashi Y., Yamamoto Y., Hitosugi T., Matsumoto Y., Hasegawa T.  Meeting abstracts of the Physical Society of Japan  61-  (1)  873  -873  2006/03/04
• Ferromagnetism in anatase TiO2codoped with Co and Nb

  T. Hitosugi, T. Hitosugi, T. Shimada, T. Shimada, T. Hasegawa, T. Hasegawa, G. Kinoda, K. Inaba, Y. Yamamoto, Y. Furubayashi, Y. Hirose  Proceedings of the 8th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology, ISQM-Tokyo 2005  191  -193  2006/01/01  [Not refereed][Not invited]
   

  Magneto-optical Faraday rotation angle of ferromagnetic anatase Co-doped TiO2films is enhanced and can be controlled by Nb doping. A carrier density of films can be varied by Nb doping in this room-temperature ferromagnetic degenerate semiconductor. A Ti0.89Nb0.06CO0.05O2film showed a Faraday rotation angle of 1.5 × 104deg/cm at 400 nm. An anomalous Hall effect, showing that the charge carriers are spin polarized, is observed in this film.
• New transparent conductors anatase Ti1-xMxO 2 (M=Nb,Ta): Transport and optical properties

  Yutaka Furubayashi, Taro Hitosugi, Taro Hitosugi, Yukio Yamamoto, Yasushi Hirose, Makoto Otani, Kiyomi Nakajima, Toyohiro Chikyow, Toshihiro Shimada, Toshihiro Shimada, Tetsuya Hasegawa, Tetsuya Hasegawa  Materials Research Society Symposium Proceedings  905-  13  -18  2005/12/01  [Not refereed][Not invited]
   

  We have discovered new transparent conducting oxides (TCOs), anatase Ti1-xMxO2 (M=Nb,Ta), in thin film form, Both films with 0.03 ≤ x ≤ 0.06 showed resistivity of 2-3 × 10 -4 Ωcm and internal transmittance of ∼95% in the visible light region (40 nm in thickness), at room temperature. These values are comparable to those of typical TCOs, such as In2-xSn xO3 (ITO). © 2006 Materials Research Society.
• 21aPS-13 Local physical properties and manipulation of C_<60> thin film by using STM

  Muranaka S., Hitosugi T., Mashima H., Fukuo N., Shimada T., Hasegawa T.  Meeting abstracts of the Physical Society of Japan  60-  (2)  757  -757  2005/08/19
• 21aXA-2 In situ evaluation of FET characteristics of polar organic molecules

  Kaji T., Shimada T., Yoshikawa G., Saiki K.  Meeting abstracts of the Physical Society of Japan  60-  (2)  702  -702  2005/08/19
• 21aXA-7 Time of Flight Measurement of Organic Thin Film FETs(2)

  Shimada Toshihiro, Saiki Koichiro  Meeting abstracts of the Physical Society of Japan  60-  (2)  703  -703  2005/08/19
• 26pYK-6 Time of Flight Measurement of Organic Thin Film FETs

  Yamamoto Y., Shimada T., Ueno K., Saiki K.  Meeting abstracts of the Physical Society of Japan  60-  (1)  803  -803  2005/03/04
• 22pYE-11 Low temperature STM observation of buckyferrocene epitaxial thin films

  Shimada T, Hasegawa T, Kaji T, Saiki K, Matsuo Y, Nakamura E, Muranaka N, Fukuo N, Mashima H, Hitosugi Y  Meeting Abstracts of the Physical Society of Japan  60-  (0)  793  -793  2005  [Not refereed][Not invited]
  
• 13pWH-2 Photo-response Mechanism of Organic FET(FET)

  Yamamoto Y., Shimada T., Saiki K.  Meeting abstracts of the Physical Society of Japan  59-  (2)  759  -759  2004/08/25
• 13pWH-1 Observation of Plasmon by Surface Spectroscopy of Organic FETs(FET)

  Shimada Toshihiro, Saiki Koichiro  Meeting abstracts of the Physical Society of Japan  59-  (2)  759  -759  2004/08/25
• 13pWH-1 Observation of Plasmon by Surface Spectroscopy of Organic FETs(FET)

  Shimada Toshihiro, Saiki Koichiro  Meeting abstracts of the Physical Society of Japan  59-  (2)  505  -505  2004/08/25
• 13pWH-2 Photo-response Mechanism of Organic FET(FET)

  Yamamoto Y, Shimada T, Saiki K  Meeting abstracts of the Physical Society of Japan  59-  (2)  505  -505  2004/08/25
• 15aPS-63 Development of UHV-LT-MFM operating under magnetic field

  Sugaya Hidetaka, Hitosugi Taro, Shimada Toshihiro, Nagamura Toshihiko, Matsumoto Yuji, Hasegawa Tetsuya  Meeting abstracts of the Physical Society of Japan  59-  (2)  838  -838  2004/08/25
• 27pZP-1 Spatial distribution of carrier in organic thin film transistor

  Kiguchi M, Nakayama M, Shimada T, Saiki K  Meeting abstracts of the Physical Society of Japan  59-  (1)  537  -537  2004/03/03
• 27pZP-4 Change of C_<60> FET Characteristics by Laser Irradiation

  Yamamoto Y, Shimada T, Saiki K  Meeting abstracts of the Physical Society of Japan  59-  (1)  538  -538  2004/03/03
• 27pZP-4 Change of C_<60> FET Characteristics by Laser Irradiation

  Yamamoto Y., Shimada T., Saiki K.  Meeting abstracts of the Physical Society of Japan  59-  (1)  837  -837  2004/03/03
• 12aXF-6 Thickness dependent structural change of bucky ferrocene epitaxial films

  Kaji T, Shimada T, Inoue H, Matsuo Y, Kuninobu Y, Nakamura E, Saiki K  Meeting Abstracts of the Physical Society of Japan  59-  (0)  783  -783  2004  [Not refereed][Not invited]
  
• Thermal transformation and electron spectroscopy of methyl-terminated Si(111) surfaces

  Miyadera Tetsuhiko, Shimada Toshihiro, Saiki Koichiro  Meeting abstracts of the Physical Society of Japan  58-  (2)  830  -830  2003/08/15
• Film Thickness Dependence of Field Effect Mobility in Pentacene Thin Film

  Kiguchi M., Nakayama M., Fujiwara S., Ueno K., Shimada T., Saiki K.  Meeting abstracts of the Physical Society of Japan  58-  (2)  752  -752  2003/08/15
• Ultraviolet photoelectron spectroscopy of C_<60> thin film FETs

  Shimada T., Suetsugu T., Yamamoto Y., Miyadera T., Saiki K.  Meeting abstracts of the Physical Society of Japan  58-  (2)  754  -754  2003/08/15
• 25pPSB-17 Structure and electronic structure of C_60/Cu(100) system.

  Iizumi K., Kiguchi M., Shimada T., Saiki K., Koma A.  Meeting abstracts of the Physical Society of Japan  57-  (1)  839  -839  2002/03/01
• Electron spectroscopy of Methyl terminated Si(111) surface

  Miyadera T., Iizumi K., Shimada T., Saiki K., Koma A.  Meeting abstracts of the Physical Society of Japan  56-  (2)  745  -745  2001/09/03
• Electronic structure of (C_<60>, In)/Si(111) system.

  Iizumi K., Shimada T., Saiki K., Koma A.  Meeting abstracts of the Physical Society of Japan  56-  (2)  741  -741  2001/09/03
• Diffusion process of Strained surfaces analyzed by modulated molecular beam scattering

  Ichikawa H., Shimada T., Koma A.  Meeting abstracts of the Physical Society of Japan  56-  (2)  719  -719  2001/09/03
• 27pZ-10 Electron Spectroscopy of ZnS organic-inorganic composite cluster thin films

  Kamimuta Y, Shimada T, Koma A  Meeting abstracts of the Physical Society of Japan  54-  (2)  849  -849  1999/09/03
• 24pY-17 Surface diffusion process analysed by modulated molecular beam scattering

  Hashimoto R., Shimada T., Koma A.  Meeting abstracts of the Physical Society of Japan  54-  (2)  795  -795  1999/09/03
• Electron Spectroscopy of C_<60> ultrathin films on layered material TaSe_2

  KAMIMUTA Y., SHIMADA T., KOMA A.  Meeting abstracts of the Physical Society of Japan  53-  (2)  404  -404  1998/09/05
• Interaction between organic molecules and inorganic surfaces measured by modulated molecular beam scattering

  KOIDE J., KAMIMUTA Y., CHO K.A, SHIMADA T., KOMA A.  Meeting abstracts of the Physical Society of Japan  53-  (2)  377  -377  1998/09/05
• Epltaxial Pressure of Squarlc Acld lilm

  SUGIURA I., SHIMADA T., KOMA A.  Meeting abstracts of the Physical Society of Japan  53-  (2)  280  -280  1998/09/05
• Structures of Liquid Crystal Monolayers Deposited by MBE

  NAGAHORI M., SHIMADA T., KOMA A.  Meeting abstracts of the Physical Society of Japan  53-  (2)  845  -845  1998/09/05
• Fabrication of Molecular Crystal Nanostructures by a Selective Growth Method

  UENO Keiji, SHIMADA Toshihiro, KOMA Atsushi  Journal of the Surface Science Society of Japan  19-  (1)  14  -20  1998/01/10
• 5a-YA-5 AFM observation of monolayer liquid crystals fabricated by Molecular Beam Deposition

  Nagahori M., Shimada T., Koma A.  Meeting abstracts of the Physical Society of Japan  52-  (2)  833  -833  1997/09/16
• 29p-PSB-28 Thermal Desorption of Ultrathin Epitaxial Films of Organic Molecules Measured by Optical Absorption

  Taira H., Shimada T., Koma A.  Abstracts of the meeting of the Physical Society of Japan. Sectional meeting  1995-  (2)  502  -502  1995/09/12
• 2p-J-8 Epitaxial growth and transport property measurements of TiSe_2 thin film

  Nishikawa H, Mochida M, Shimada T, Koma A  Abstracts of the meeting of the Physical Society of Japan. Sectional meeting  1994-  (2)  113  -113  1994/08/16
• 2p-J-9 Electronic Conductivity of Epitaxial Ultrathin Films of TaSe_2

  MOCHIDA M, SHIMADA T, KOMA A  Abstracts of the meeting of the Physical Society of Japan. Sectional meeting  1994-  (2)  113  -113  1994/08/16
• 2-DIMENSIONAL BIREFRINGENCE MEASUREMENT USING THE PHASE-SHIFTING TECHNIQUE

  Y OTANI, T SHIMADA, T YOSHIZAWA, N UMEDA  OPTICAL ENGINEERING  33-  (5)  1604  -1609  1994/05  [Not refereed][Not invited]
   

  The phase shifting technique for the measurement of a two-dimensional birefringence distribution is described and discussed. The birefringent phase difference and azimuthal angle of a transparent material can be determined in the dependence of both measurements on the amplitude and phase of the polarization interferometry. A half-wave plate and a Babinet-Soleil compensator are used as phase shifters for the phase shifting technique. It can measure 256 x 256 values of the birefringent phase difference and azimuthal angle in a short time with sufficient accuracy. This method does not require moving the sample mechanically. The results and procedures for measuring such a birefringence distribution of optical components such as a calibrated Babinet-Soleil compensator, a lens, and a roof prism are discussed.
• 28p-Y-12 Epitaxial Growth and Charge Density Wanes of TaS_2 and TaSe_2

  Shimada T, Ohuchi F.S, Koma A  秋の分科会講演予稿集  1992-  (2)  518  -518  1992/09/14
• 2-DIMENSIONAL BIREFRINGENCE MEASUREMENT USING THE PHASE-SHIFTING TECHNIQUE

  Y OTANI, T SHIMADA, T YOSHIZAWA, N UMEDA  INTERNATIONAL SYMPOSIUM ON OPTICAL FABRICATION, TESTING, AND SURFACE EVALUATION  1720-  346  -354  1992  [Not refereed][Not invited]
   

  © 1992 SPIE. All rights reserved. We propose a two-dimensional birefringence measurement method. A linearly polarized light goes through a Babinet-Soleil compensator whose principle axis direction is set 45 degree to the incident light. The light is affected by the birefringence when it passes through an optical sample. The interference fringe behind a linear polarizer is captured wholly as a two-dimensional image by a CCD camera. The data is analyzed into the phase information by the phase shifting technique using a Babinet-Soleil compensator. Here the obtained phase changes sinusoidally. Its amplitude and phase mean the relative retardation and azimuth angle respectively when a polarization azimuth of the incident light is rotated. A halfwave plate as a phase shifter is used again to obtain this amplitude and phase using the phase shifting technique again. We discuss these experimental procedures and results applied to such optical components as a lens and a roof prism.

Industrial Property Rights

• 特開2009-078963:有機半導体化合物の単結晶薄膜の作製方法  2009/04/16

  加藤 隆志, 五十嵐 達也, 島田 敏宏, 石井 由威  富士フイルム株式会社, 国立大学法人 東京大学  200903079294827111
• 特開2005-281011:結晶性薄膜の作製方法及び装置  2005/10/13

  島田 敏宏, 長谷川 哲也  財団法人神奈川科学技術アカデミー  200903026853738020
• 特開2004-315694:接着方法、接着剤、接着構造体、及び接着中間構造体  2004/11/11

  島田 敏宏  国立大学法人 東京大学  200903031129079175
• 特許第2762046号:基板物質による成長速度の違いを利用した有機分子性物質高配向集合体の微細構造パターンの作成法  1998/03/27

  島田 敏宏, 小間 篤  東京大学長  201103034790603767
• 特開平8-264445:基板物質による成長速度の違いを利用した分子性物質高配向集合体の微細構造パターンの作成法  1996/10/11

  島田 敏宏, 小間 篤  東京大学長  200903004834796768
• 特許4759096:Vapor transmission rate measurement instruments and method  

  Toshihiro Shimada

Research Grants & Projects

• 化学反応と相転移で電子を変える―質量ゼロの電子を含む有機伝導体の創製と未知の物性

  日本学術振興会：科学研究費助成事業

  Date (from‐to) : 2022/04 -2027/03 

  Author : 内藤 俊雄, 島田 敏宏
• 2次元物質単層シートの組成制御によるバンドギャップエンジニアリングの確立

  日本学術振興会：科学研究費助成事業

  Date (from‐to) : 2022/04 -2025/03 

  Author : 柳瀬 隆, 島田 敏宏

Educational Activities

Teaching Experience

Position History

• 2020年4月1日 

  - 

  2021年3月31日 

  大学院総合化学院副学院長
• 2014年7月1日 

  - 

  2016年6月30日 

  評価室室員
• 2016年7月1日 

  - 

  2018年6月30日 

  評価室室員

Committee Membership

• 2023/01 -2025/12   IUVSTA Electronic Materials and Processing Diviison   Secretary