研究者データベース

原 真二郎(ハラ シンジロウ)
量子集積エレクトロニクス研究センター
准教授

基本情報

所属

  • 量子集積エレクトロニクス研究センター

職名

  • 准教授

学位

  • 博士(工学)(1998年03月 北海道大学)

ホームページURL

科研費研究者番号

  • 50374616

J-Global ID

研究キーワード

  • 半導体ナノエレクトロニクス   磁性体ナノ構造   半導体ナノ構造   有機金属気相成長法   半導体材料物性   Semiconductor Nano-Electronics   Magnetic Nano-Structures   Semiconductor Nano-Structures   Metal-Organic Vapor Phase Epitaxy   Materials Properties of Semiconductors   

研究分野

  • ナノテク・材料 / ナノ構造物理
  • ナノテク・材料 / 応用物性
  • ナノテク・材料 / 結晶工学
  • ナノテク・材料 / ナノ材料科学
  • ものづくり技術(機械・電気電子・化学工学) / 電気電子材料工学
  • ものづくり技術(機械・電気電子・化学工学) / 電子デバイス、電子機器
  • ナノテク・材料 / ナノマイクロシステム

職歴

  • 2007年05月 - 現在 北海道大学 量子集積エレクトロニクス研究センター 准教授(常勤)
  • 2007年10月 - 2011年03月 独立行政法人 科学技術振興機構 (JST) 戦略的創造研究推進事業 さきがけタイプ 研究者(兼任)
  • 2007年04月 - 2007年04月 北海道大学 大学院情報科学研究科 助教(常勤)
  • 2004年04月 - 2007年03月 北海道大学 大学院情報科学研究科 助手(常勤)
  • 1998年04月 - 2004年03月 株式会社 富士通研究所 光半導体研究部 研究員(常勤)
  • 2002年09月 - 2003年09月 ドイツ フィリップス大学マールブルグ 材料科学研究センター 客員研究員
  • 1995年04月 - 1998年03月 独立行政法人 日本学術振興会 特別研究員(DC1)

学歴

  • 1995年04月 - 1998年03月   北海道大学   大学院工学研究科   電子情報工学専攻 博士後期課程

所属学協会

  • 応用物理学会 ナノワイヤ研究グループ   日本磁気学会   応用物理学会 結晶工学分科会   Materials Research Society (MRS)   日本結晶成長学会   The Institute of Electrical and Electronics Engineers (IEEE) / Photonics Society   応用物理学会   

研究活動情報

論文

  • Keigo Teramoto, Ryoma Horiguchi, Wei Dai, Yusuke Adachi, Masashi Akabori, Shinjiro Hara
    physica status solidi (b) Vol. 259 No. 4 2100519-1 - 2100519-9 2022年01月19日 [査読有り][通常論文]
  • Ryoma Horiguchi, Shinjiro Hara, Kozaburo Suzuki, Masaya Iida
    AIP Advances Vol. 10 No. 12 125003-1 - 125003-7 2020年12月01日 [査読有り][通常論文]
  • Patrick Uredat, Matthias T Elm, Ryoma Horiguchi, Peter J Klar, Shinjiro Hara
    Journal of Physics D: Applied Physics Vol. 53 No. 33 333002-1 - 333002-22 2020年08月12日 [査読有り][招待有り]
  • Anomalous Angle-Dependent Magnetotransport Properties of Single InAs Nanowires
    Patrick Uredat, Ryutaro Kodaira, Ryoma Horiguchi, Shinjiro Hara, Andreas Beyer, Kerstin Volz, Peter J. Klar, Matthias T. Elm
    Nano Lett. Vol. 20 No. 1 618 - 624 2020年01月 [査読有り][通常論文]
  • Selective-Area Growth and Transport Properties of MnAs/InAs Heterojunction Nanowires (Invited Paper)
    Shinjiro Hara, Matthias T. Elm, Peter J. Klar
    J. Mater. Res. Vol. 34 No. 23 3863 - 3876 2019年12月 [査読有り][招待有り]
  • Masaharu Yoshioka, Shinjiro Hara
    Information Search, Integration, and Personalization (Communications in Computer and Information Science (CCIS), edited by D. Kotzinos, D. Laurent, N. Spyratos, Y. Tanaka, and R. Taniguchi, Springer International Publishing, Switzerland, 2019) Vol. 1040 41 - 52 2019年08月 [査読有り][通常論文]
  • Magnetization Characterization of MnAs Nanoclusters at Close Range in Bended MnAs/InAs Heterojunction Nanowires
    Ryutaro Kodaira, Ryoma Horiguchi, Shinjiro Hara
    J. Cryst. Growth Vol. 507 241 - 245 2019年02月 [査読有り][通常論文]
  • Selective-Area Growth of Magnetic MnAs Nanodisks on Si (111) Substrates Using Multiple Types of Dielectric Masks
    Ryoma Horiguchi, Shinjiro Hara, Masaya Iida, Kohei Morita
    J. Cryst. Growth Vol. 507 226 - 231 2019年02月 [査読有り][通常論文]
  • Magnetic Domain Structure and Domain Wall Analysis of Ferromagnetic MnAs Nanodisks Selectively-Grown on Si (111) Substrates for Spintronic Applications
    Ryoma Horiguchi, Shinjiro Hara, Masaya Iida
    J. Appl. Phys. Vol. 124 No. 15 153905-1 - 153905-7 2018年10月 [査読有り][通常論文]
  • Ryutaro Kodaira, Kyohei Kabamoto, Shinjiro Hara
    Japanese Journal of Applied Physics 56 6 06GH03-1 - 06GH03-6 2017年06月01日 [査読有り][通常論文]
     
    We report in detail on the growth time dependence of ferromagnetic MnAs nanoclusters in vertical MnAs/InAs heterojunction nanowires and the analysis of magnetization switching in a heterojunction nanowire. The size of MnAs nanoclusters increases with increasing growth time of MnAs nanoclusters. In addition, we observe the magnetization and magnetization switching in one of the MnAs nanoclusters with a relatively large height parallel to the c-axis, i.e., the magnetic hard axis, possibly owing to the magnetic shape anisotropy along the c-axis, after the application of external magnetic fields nearly parallel to the c-axis of MnAs nanoclusters. These results suggest that the growth time of MnAs nanoclusters is a key to controlling the size, shape, and even magnetization of MnAs nanoclusters in vertical MnAs/InAs heterojunction nanowires.
  • Analyses of Magnetization Switching and Magnetic Domains in Lateral MnAs Nanowires in Combination with Structural Characterization
    Ryoma Horiguchi, Hiroaki Kato, Kyohei Kabamoto, Ryutaro Kodaira, Shinjiro Hara
    Jpn. J. Appl. Phys. Vol. 56 No. 6S1 06GH05-1 - 06GH05-6 2017年05月 [査読有り][通常論文]
  • Kyohei Kabamoto, Ryutaro Kodaira, Shinjiro Hara
    JOURNAL OF CRYSTAL GROWTH 464 80 - 85 2017年04月 [査読有り][通常論文]
     
    The authors report on the magnetic characterization results of ferromagnetic MnAs/semiconducting InAs heterojunction nanowires fabricated by selective-area metal-organic vapor phase epitaxy. Single magnetic domains are formed in MnAs nanoclusters. Thin MnAs nanoclusters are magnetized parallel to one of the magnetic easy axes, i.e., a-axes, owing to the shape and magneto-crystalline anisotropies of the nanoclusters. On the other hand, in the case of thick MnAs nanoclusters, which are elongated along the magnetic hard axis, i.e., c axis, magnetization directions are parallel to the c-axis of the nanoclusters predominantly owing to the shape anisotropy. The shape of MnAs nanoclusters is a key to control the magnetizations and magnetic domains.
  • Single-Photon Emission from InAsP Quantum Dots Embedded in Density-Controlled InP Nanowires
    Shougo Yanase, Hirotake Sasakura, Shinjiro Hara, Junichi Motohisa
    Jpn. J. Appl. Phys. Vol. 56 No. 4S 04CP04-1 - 04CP04-6 2017年02月 [査読有り][通常論文]
  • Ryutaro Kodaira, Shinjiro Hara, Kyohei Kabamoto, Hiromu Fujimagari
    JAPANESE JOURNAL OF APPLIED PHYSICS 55 7 075503-1 - 075503-8 2016年07月 [査読有り][通常論文]
     
    The purpose of this study is to synthesize vertical ferromagnetic/semiconducting heterojunction nanowires by combing the catalyst-free selective-area growth of InAs nanowires and the endotaxial nanoclustering of MnAs and to structurally and magnetically characterize them. MnAs penetrates the InAs nanowires to form nanoclusters. The surface migration length of manganese adatoms on the nanowires, which is estimated to be 600nm at 580 degrees C, is a key to the successful fabrication of vertical MnAs/InAs heterojunction nanowires with atomically abrupt heterointerfaces. (C) 2016 The Japan Society of Applied Physics
  • Thaer M. Dieb, Masaharu Yoshioka, Shinjiro Hara
    Journal of Information Processing 24 3 554 - 564 2016年 [査読有り][通常論文]
     
    The process of nanocrystal device development is not well systematized. To support this process, analysis of the information produced by developmental experiments is required. In this study, we constructed an annotated corpus to support the extraction of experimental information from relevant publications. We designed the corpus-construction guidelines by cooperating with a domain expert. We evaluated these guidelines through corpusconstruction experiments with graduate students from this domain, and then evaluated the corpus with the domain expert. In the corpus construction experiments, we achieved a sufficient level of Inter-Annotator Agreement by using a loose agreement measure that ignored the term-boundary mismatch problem, and made an agreement corpus that excluded annotations based on misunderstanding the guidelines. The domain expert evaluated this agreement corpus and modified the guidelines based on real examples. Using these guidelines, we finalized the corpus called "NaDev" (Nanocrystal Device development corpus). The NaDev corpus and its construction guidelines will be released via our website, http://nanoinfo.ist.hokudai.ac.jp/. The NaDev corpus aims to support automatic information extraction from publications relevant to nanocrystal device development. This information can be used to solve problems in the nanotechnology domain using the massive availability of fresh information. To the best of our knowledge, this is the first corpus constructed for the development of nanocrystal devices.
  • Shinya Sakita, Shinjiro Hara, Matthias T. Elm, Peter J. Klar
    APPLIED PHYSICS LETTERS 108 4 043108-1 - 043108-5 2016年01月 [査読有り][通常論文]
     
    We report on selective-area metal-organic vapor phase epitaxy and magnetic characterization of coupled MnAs/AlGaAs nanoclusters formed on thin Al2O3 insulating layers crystallized on Si(111) substrates. Cross-sectional transmission electron microscopy reveals that poly-crystalline gamma-Al2O3 grains are formed after an annealing treatment of the amorphous Al2O3 layers deposited by atomic layer deposition on Si(111) substrates. The < 111 > direction of the gamma-Al2O3 grains tends to be oriented approximately parallel to the < 111 > direction of the Si substrate. We observe that hexagonal MnAs nanoclusters on AlGaAs buffer layers grown by selective-area metal-organic vapor phase epitaxy on partially SiO2-masked Al2O3 insulator crystallized on Si(111) substrates are oriented with the c-axis along the < 111 > direction of the substrates, but exhibit a random in-plane orientation. A likely reason is the random orientation of the poly-crystalline gamma-Al2O3 grains in the Al2O3 layer plane. Magnetic force microscopy studies at room temperature reveal that arrangements of coupled MnAs nanoclusters exhibit a complex magnetic domain structure. Such arrangements of coupled MnAs nanoclusters may also show magnetic random telegraph noise, i.e., jumps between two discrete resistance levels, in a certain temperature range, which can be explained by thermally activated changes of the complex magnetic structure of the nanocluster arrangements. (C) 2016 AIP Publishing LLC.
  • Martin Fischer, Matthias T. Elm, Hiroaki Kato, Shinya Sakita, Shinjiro Hara, Peter J. Klar
    PHYSICAL REVIEW B 92 16 165306-1 - 165306-7 2015年10月 [査読有り][通常論文]
     
    The temporal dependence of the resistance of MnAs nanocluster arrangements grown by selective-area metal-organic vapor-phase epitaxy is investigated at different temperatures. The resistance of such arrangements exhibits random telegraph noise with jumps between discrete resistance levels. The effect is attributed to thermally activated switching of the magnetic domain structure resulting in alterations of spin-dependent scattering between the MnAs clusters of the arrangements. The behavior can be qualitatively understood by a simple model in which it is assumed that the nanocluster arrangement consists of three domains in accordance with investigations by magnetic force microscopy. The magnetizations of the outer larger domains remain fixed, whereas the magnetization of a smaller intermediate domain (or domain wall) exhibits thermally activated switching between local minima of its energy landscape. The results of the model indicate that the time scale of an actual switching event of the entire intermediate domain comprises the nucleation of a seed domain consisting of a few thousand Mn spins followed by the transformation of the entire domain by domain-wall motion in order to reorient its magnetization.
  • Thaer M. Dieb, Masaharu Yoshioka, Shinjiro Hara, Marcus C. Newton
    BEILSTEIN JOURNAL OF NANOTECHNOLOGY 6 1872 - 1882 2015年09月 [査読有り][通常論文]
     
    To support nanocrystal device development, we have been working on a computational framework to utilize information in research papers on nanocrystal devices. We developed an annotated corpus called "NaDev" (Nanocrystal Device Development) for this purpose. We also proposed an automatic information extraction system called "NaDevEx" (Nanocrystal Device Automatic Information Extraction Framework). NaDevEx aims at extracting information from research papers on nanocrystal devices using the NaDev corpus and machine-learning techniques. However, the characteristics of NaDevEx were not examined in detail. In this paper, we conduct system evaluation experiments for NaDevEx using the NaDev corpus. We discuss three main issues: system performance, compared with human annotators; the effect of paper type (synthesis or characterization) on system performance; and the effects of domain knowledge features (e.g., a chemical named entity recognition system and list of names of physical quantities) on system performance. We found that overall system performance was 89% in precision and 69% in recall. If we consider identification of terms that intersect with correct terms for the same information category as the correct identification, i.e., loose agreement (in many cases, we can find that appropriate head nouns such as temperature or pressure loosely match between two terms), the overall performance is 95% in precision and 74% in recall. The system performance is almost comparable with results of human annotators for information categories with rich domain knowledge information (source material). However, for other information categories, given the relatively large number of terms that exist only in one paper, recall of individual information categories is not high (39-73%); however, precision is better (75-97%). The average performance for synthesis papers is better than that for characterization papers because of the lack of training examples for characterization papers. Based on these results, we discuss future research plans for improving the performance of the system.
  • Shinjiro Hara, Keita Komagata
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 252 9 1925 - 1933 2015年09月 [査読有り][通常論文]
     
    The use of selective-area metal-organic vapor phase epitaxy, which is our bottom-up formation approach, to fabricate MnAs nanocluster composite arrays in which two nanoclusters are formed in close proximity at an angle of 120 degrees and with a spatial gap of around 20nm on GaAs (111)B substrates is reported in this paper. The magnetic reversals of the nanoclusters in the composite arrays are observed depending on the strengths and directions of the applied external magnetic fields at room temperature. The applied external magnetic fields for the magnetic reversals in one of the nanoclusters in the composites are possibly from 750 to 1000Gauss (G). The characterization results obtained using magnetic force microscopy show that the magnetic reversals in the nanoclusters are independently controlled in nanocluster composites. Finally, we discuss the designing of the nanocluster size, shape, and arrangement to control the magnetization directions in the nanoclusters in the composites for possible application to magnetic logic operations based on the results of the magnetic reversals in the nanoclusters.
  • Growth of AlGaAs Nanostructures on Crystallized Al2O3 Interlayers for Semiconducting Nanowire Growth on Glass Substrate
    Shinya Sakita, Shinjiro Hara
    Jpn. J. Appl. Phys. Vol. 54 No. 7 075504-1 - 075504-8 2015年06月 [査読有り][通常論文]
  • Hiroaki Kato, Shinya Sakita, Shinjiro Hara
    JOURNAL OF CRYSTAL GROWTH 414 151 - 155 2015年03月 [査読有り][通常論文]
     
    The authors report on the bottom-up fabrication and magnetic characterization of lateral MnAs nanowires (NWs) on partially SiO2-masked GaAs (1 1 1) B substrates by selective-area metal-organic vapor phase epitaxy (SA-MOVPE). Magnetic force microscopy reveals that multimagnetic domains are formed in the relatively long MnAs NWs with the length of 5 mu m or longer in the direction parallel to the NWs. In the relatively wide NWs with the width of about 0.6 mu m, multimagnetic domains are formed in the direction perpendicular to the MnAs NWs as well as in the direction parallel to the NWs. Multimagnetic domains change to a single magnetic domain with increasing the applied magnetic fields from 1000 to 2000 G. The magnetic domains are controllable by means of the NW shape and the applied magnetic fields in our NWs fabricated by SA-MOVPE. (C) 2014 Elsevier B.V. All rights reserved.
  • M. Fischer, M. T. Elm, S. Sakita, S. Hara, P. J. Klar
    APPLIED PHYSICS LETTERS 106 3 032401-1 - 032401-5 2015年01月 [査読有り][通常論文]
     
    We report on magnetotransport measurements on a MnAs nanocluster arrangement consisting of two elongated single-domain clusters connected by a metal spacer. The arrangement was grown on GaAs(111)B-substrates by selective-area metal organic vapor phase epitaxy. Its structural properties were investigated using scanning-electron microscopy and atomic-force microscopy, while its magnetic domain structure was analyzed by magnetic-force microscopy. The magnetoresistance of the arrangement was investigated at 120 K for two measurement geometries with the magnetic field oriented in the sample plane. For both geometries, discrete jumps of the magnetoresistance of the MnAs nanocluster arrangement were observed. These jumps can be explained by magnetic-field induced switching of the relative orientation of the magnetizations of the two clusters which affects the spin-dependent scattering in the interface region between the clusters. For a magnetic field orientation parallel to the nanoclusters' elongation direction a spin-valve like behavior was observed, showing that ferromagnetic nanoclusters may be suitable building blocks for planar magnetoelectronic devices. (C) 2015 AIP Publishing LLC.
  • Matthias T. Elm, Shinjiro Hara
    ADVANCED MATERIALS 26 48 8079 - 8095 2014年12月 [査読有り][通常論文]
     
    Granular hybrid structures containing ferromagnetic nanoclusters embedded in a semiconducting matrix are an interesting class of materials as their properties can be tuned in a wide range. Hybrids are a promising alternative to dilute magnetic semiconductors in the field of spintronics and magnetoelectronics, because the nanoclusters can show ferromagnetic behavior even at room temperature. In this review, it is focused on the rather well investigated dilute magnetic semiconductor (Ga, Mn) As with MnAs inclusions. Different preparation methods are presented which were developed over the last two decades in order to obtain MnAs nanoclusters in the semiconducting matrix and to tune the structural and magnetic properties of these clusters. Recent results on the influence of the nanoclusters on the hybrids' transport properties as well as first approaches to use hybrids with a random nanocluster distribution in new spintronic devices are discussed. In addition, the perspective of using single MnAs nanoclusters as well as ordered arrangements of a few nanoclusters in new planar magnetoelectronic devices is illustrated.
  • Automatic Annotation of Parameters from Nanodevice Development Research Papers
    T. M. Dieb, M. Yoshioka, S. Hara, M. C. Newton
    Proceedings of the 4th International Workshop on Computational Terminology (COMPUTERM 2014), COLING 2014 Workshop, Dublin, Ireland, August 23, 2014: Proceedings of the 4th International Workshop on Computational Terminology, pp. 77-85 (9pp.) 77 - 85 2014年08月 [査読有り][通常論文]
  • Shinjiro Hara
    Materials Science Forum (Proc. THERMEC 2013 (edited by B. Mishra, M. Ionescu, T. Chandra), Trans Tech Publications Ltd., Switzerland, 2014) Vols. 783-786 Chapter 15 1990 - 1995 2014年05月 [査読有り][招待有り]
  • Yoshinori Kohashi, Shinjiro Hara, Junichi Motohisa
    Mater. Res. Express 1 1 015036-1 - 015036-11 2014年03月 [査読有り][通常論文]
     
    We grew gallium-rich (x > 0.50) and indium -rich (x < 0.50) Ini,GaxAs nano wires by catalyst free selective-area metal organic vapor-phase epitaxy (SAMOVPE), and compared their growth dynamics dependence on V/III ratio. It was found that the growth dynamics of In, GaxAs nanowires is clearly dependent on the alloy composition x. Specifically, for gallium rich nanowire growth, the axial growth rate of nanowires initially increased with decreasing V/III ratio, and then started to decrease when the V/III ratio continued to decrease below a critical value. On the other hand, axial growth rate of indium -rich nanowires monotonically decreased with decreasing V/III ratio. In addition, the alloy composition was strongly dependent on the V/III ratio for gallium -rich nanowire growth, while it was relatively independent of the V/III ratio for indium -rich nanowire growth. We discuss the origin of dissimilarity in the growth dynamics dependence on V/III ratio between gallium -rich and indium rich InGaAs nanowire growth, and conclude that it is due to the inherent dissimilarity between GaAs and InAs. Our finding provides important guidelines for achieving precise control of the diameter, height, and alloy composition of nanowires suitable for future nanowire-based electronics.
  • ナノ知識探索プロジェクト:実験記録からの知識発見 (第3報) – Nanodevice Research Papers Clustering Based on Automatic Paper Annotation –
    Thaer Moustafa Dieb, 吉岡 真治, 原 真二郎
    2013年度(第27回)人工知能学会全国大会 (JSAI 2013), 富山, 2013年6月4日-7日, 発表論文集, 1C3-4 (4pp.) 1C3-4-1 - 1C3-4-4 2013年06月 [査読有り][通常論文]
  • Yuta Kobayashi, Yoshinori Kohashi, Shinjiro Hara, Junichi Motohisa
    APPLIED PHYSICS EXPRESS 6 4 045001-1 - 045001-4 2013年04月 [査読有り][通常論文]
     
    We attempted the selective-area metalorganic vapor-phase epitaxial (SA-MOVPE) growth of InAs nanowires (NWs) using a tungsten/dielectric composite mask and fabricated nanowire vertical surrounding-gate field-effect transistors (NW-VSG-FETs), where tungsten served as both the mask in SA-MOVPE growth and the bottom electrode of the FET. The growth of NWs with diameters as low as 100 nm was demonstrated using the composite mask. The fabricated NW-VSG-FET exhibited improved drain current density as compared with our previously reported NW-VSG-FETs, and a larger on/off ratio as compared with previously reported NW-VSG-FETs having similar electrodes at the bottoms of NWs. (C) 2013 The Japan Society of Applied Physics
  • Yoshinori Kohashi, Shinya Sakita, Shinjiroh Hara, Junichi Motohisa
    APPLIED PHYSICS EXPRESS 6 2 025502-1 - 025502-3 2013年02月 [査読有り][通常論文]
     
    Control of the diameter and pitch of InGaAs nanowire arrays in selective-area metalorganic vapor-phase epitaxy was investigated. It was found that their nucleation was strongly dependent on the geometry of the mask, resulting in the difficulty of nucleation for a larger mask pitch, particularly for an opening diameter of less than 50 nm. Precise adjustment of the V/III ratio enabled us to control the nucleation independently of the mask pitch for smaller openings, and we successfully obtained 30-nm-diameter InGaAs nanowires independently of the mask pitch by the proposing V/III-ratio-controlled two-step growth method. (C) 2013 The Japan Society of Applied Physics
  • Shinjiro Hara, Hiromu Fujimagari, Shinya Sakita, Masatoshi Yatago
    NANOEPITAXY: MATERIALS AND DEVICES V 8820 88200V-1 - 88200V-12 2013年 [査読有り][招待有り]
     
    The authors report on the differences in ferromagnetic MnAs nanocluster formation on GaAs, GaAs/AlGaAs, GaAs/GaAsP, and InAs nanowire templates by combing selective-area metal-organic vapor phase epitaxy of semiconducting nanowires and endotaxial nanoclustering of MnAs. To characterize the dependences of MnAs nanocluster formation on semiconducting materials of the nanowire templates, GaAs, GaAs/AlGaAs core-shell, and GaAs/GaAsP core-shell nanowires have been grown at 750 degrees C, whereas InAs nanowires have been grown at 580 degrees C. MnAs nanoclusters are commonly and most frequently formed at six ridges between two {0-11} crystal facets on hexagonal prisms of III-V semiconducting nanowires. That is presumably because many atomic steps exist between the crystal facets. Here, MnAs nanoclusters are grown "into" the nanowires, as a result of the phenomenon of "endotaxy". Manganese atoms on the nanowires surface form chemical bonds mainly with arsenic atoms of the nanowires, because only manganese organometallic source and hydrogen are supplied, i.e. no supply of arsenic hydride source during the endotaxy of MnAs. In the case of GaAs/GaAsP core-shell and InAs nanowires, however, MnAs nanoclusters are formed on the top {111} B surfaces of the nanowires, as well as at six ridges of the hexagonal prisms. The results obtained in the current work possibly show that the endotaxy of MnAs depends on the thermal stability of the nanowires and/or the strength of atomic bonds in the host materials of nanowires.
  • Shinjiro Hara, Shinya Sakita, Masatoshi Yatago
    JAPANESE JOURNAL OF APPLIED PHYSICS 51 11 11PE01-1 - 11PE01-7 2012年11月 [査読有り][通常論文]
     
    We report on the structural and electrical characterizations of MnAs/GaAs hybrid nanowires fabricated by combining selective-area metal-organic vapor phase epitaxy of undoped GaAs nanowires and endotaxial nanoclustering of MnAs. As a result of endotaxy, MnAs nanoclusters are typically embedded in the six ridges of hexagonal GaAs nanowires. However, the MnAs nanoclusters are formed not only at the six ridges, but on the surfaces of six {0 (1) over bar1} facets of hexagonal GaAs nanowires, when we decrease the growth temperature from 600 to 400 degrees C. From the cross-sectional characterizations by transmission electron microscopy, the size and density of the MnAs nanoclusters formed at the top part of the GaAs nanowires are much larger than those formed at the bottom part of the nanowires. Current and voltage characteristics of MnAs/GaAs hybrid nanowires are investigated using two-terminal device structures of free-standing hybrid nanowires. The hybrid nanowires formed on Zn-doped p-type GaAs (111) B substrates show ohmic characteristics, while those formed on Si-doped n-type GaAs (111) B substrates show clear rectifying characteristics. The hybrid nanowires show p-type conductivity possibly owing to the formation of p-type GaAs layers near the nanowire surfaces caused by the thermal diffusion of Mn atoms into GaAs nanowires during the endotaxial nanoclustering of MnAs. (C) 2012 The Japan Society of Applied Physics
  • ナノ知識探索プロジェクト:ナノデバイス開発記録からの知識発見
    吉岡 真治, Thaer Moustafa Dieb, 原 真二郎
    Designシンポジウム2012, 京都, 2012年10月16日-17日, 発表論文集 (5pp.) 1 - 5 2012年10月 [査読無し][通常論文]
  • Construction of Tagged Corpus for Nanodevices Development Papers (2nd Report) – Information extraction by cascading named entity recognition tools –
    Thaer Moustafa Dieb, 吉岡 真治, 原 真二郎
    言語処理学会 第18回年次大会 (NLP 2012), 広島, 2012年3月13日-16日, 発表論文集, pp. 1244-1247 1244 - 1247 2012年03月 [査読有り][通常論文]
  • Satoshi Maeda, Katsuhiro Tomioka, Shinjiroh Hara, Junichi Motohisa
    JAPANESE JOURNAL OF APPLIED PHYSICS 51 2 02BN03-1 - 02BN03-4 2012年02月 [査読有り][通常論文]
     
    We fabricated nanowire light-emitting diodes (LEDs) using InP nanowires (NWs). Indium phosphide NWs with axial p-n junction were grown by selective-area metalorganic vapor phase epitaxy. The results of secondary-electron-microscopy (SEM) observation and photoluminescence measurement showed the formation of wurtzite InP NWs with some mixture of zincblende crystal phase, as expected from the used growth conditions. NW-LEDs were fabricated by sputtering indium tin oxide (ITO) after a planarization process for the top contact and AuZn evaporation for the backside contact. Current-voltage characterisitics showed clear rectifying characteristics with a small leakage current, and fairly linear current-light output characteristics were observed. By designing the pitch of the NW array, emission from individual NWs was confirmed, which opens the possibility for realizing a single NW-LED applicable to single-photon emitters. (C) 2012 The Japan Society of Applied Physics
  • Masatoshi Yatago, Hiroko Iguchi, Shinya Sakita, Shinjiro Hara
    JAPANESE JOURNAL OF APPLIED PHYSICS 51 2 02BH01-1 - 02BH01-8 2012年02月 [査読有り][通常論文]
     
    The authors report on the fabrication of MnAs/GaAs hybrid nanowires by combining selective-area metal-organic vapor phase epitaxy of GaAs nanowires and "endotaxy" of MnAs nanoclusters. MnAs nanoclusters are embedded in the six ridges of hexagonal GaAs nanowires as a result of endotaxy. From the cross-sectional characterizations by transmission electron microscopy, the average width of MnAs nanoclusters with the hexagonal NiAs-type crystal structure and the average depth in GaAs nanowires are estimated to be about 10 and 8 nm, respectively. The magnetic responses detected from the reference samples grown on planar GaAs (111) B layers show that ferromagnetic MnAs nanoclusters are formed. The diameter of nanoclusters grown in GaAs nanowires increases with decreasing growth temperature and/or increasing distance between the GaAs nanowires, while the density of nanoclusters increases with increasing growth temperature. It is found that the diameter and density of nanoclusters are strongly influenced by the gas supplied during the decrease in temperature after the nanocluster growth. (C) 2012 The Japan Society of Applied Physics
  • K. Hiruma, K. Tomioka, P. Mohan, L. Yang, J. Noborisaka, B. Hua, A. Hayashida, S. Fujisawa, S. Hara, J. Motohisa, T. Fukui
    Journal of Nanotechnology Vol. 2012 169284-1 - 169284-29 2012年 [査読有り][招待有り]
     
    The fabrication of GaAs- and InP-based III-V semiconductor nanowires with axial/radial heterostructures by using selective-area metal-organic vapor-phase epitaxy is reviewed. Nanowires, with a diameter of 50-300nm and with a length of up to 10μm, have been grown along the «111» B or «111» A crystallographic orientation from lithography-defined SiO2 mask openings on a group III-V semiconductor substrate surface. An InGaAs quantum well (QW) in GaAs/InGaAs nanowires and a GaAs QW in GaAs/AlGaAs or GaAs/GaAsP nanowires have been fabricated for the axial heterostructures to investigate photoluminescence spectra from QWs with various thicknesses. Transmission electron microscopy combined with energy dispersive X-ray spectroscopy measurements have been used to analyze the crystal structure and the atomic composition profile for the nanowires. GaAs/AlGaAs, InP/InAs/InP, and GaAs/GaAsP core-shell structures have been found to be effective for the radial heterostructures to increase photoluminescence intensity and have enabled laser emissions from a single GaAs/GaAsP nanowire waveguide. The results have indicated that the core-shell structure is indispensable for surface passivation and practical use of nanowire optoelectronics devices. Copyright © 2012 K. Hiruma et al.
  • Yoshinori Kohashi, Takuya Sato, Keitaro Ikejiri, Katsuhiro Tomioka, Shinjiroh Hara, Junichi Motohisa
    JOURNAL OF CRYSTAL GROWTH 338 1 47 - 51 2012年01月 [査読有り][通常論文]
     
    Indium-rich InGaAs nanowires were grown on an InP (111)B substrate by catalyst-free selective-area metal-organic vapor phase epitaxy, and the growth-temperature dependence of growth rate and composition was studied. In particular, nanowire growth rate rapidly decreases as growth temperature increases. This tendency is opposite (for a similar temperature range) to that found in a previous study on selective-area growth of gallium-rich InGaAs nanowires. This difference between indium-rich and gallium-rich nanowires suggests that the influence of growth temperature on the growth of InGaAs nanowires is dependent on the group-III supply ratio. On the basis of previous experimental observations in InAs and GaAs nanowires, temperature dependence of nanowire growth rate and its dependence on group-III supply ratio are predicted. A guideline to determine the optimum growth conditions of InGaAs nanowires is also discussed. (C) 2011 Elsevier B.V. All rights reserved.
  • Thaer M. Dieb, Masaharu Yoshioka, Shinjiro Hara
    Proceedings of the 2012 IIAI International Conference on Advanced Applied Informatics, IIAIAAI 2012 42 - 47 2012年 [査読有り][通常論文]
     
    To support development processes for nanodevices, we want to utilize the information related to experiments from nanodevice development research papers. In this paper, we propose a new guideline for constructing a tagged corpus of nanodevice development papers to achieve this goal. We also propose the use of a corpus construction support tool. To speed up the construction process, we propose an approach for automatic extraction of experiment-related information from the papers. © 2012 IEEE.
  • Katsuhiro Tomioka, Keitaro Ikejiri, Tomotaka Tanaka, Junichi Motohisa, Shinjiroh Hara, Kenji Hiruma, Takashi Fukui
    JOURNAL OF MATERIALS RESEARCH 26 17 2127 - 2141 2011年09月 [査読有り][招待有り]
     
    We review the position-controlled growth of III-V nanowires (NWs) by selective-area metal-organic vapor-phase epitaxy (SA-MOVPE). This epitaxial technique enables the positioning of the vertical NWs on (111) oriented surfaces with lithographic techniques. Core-shell structures have also been achieved by controlling the growth mode during SA-MOVPE. The core-shell III-V NW-based devices such as light-emitting diodes, photovoltaic cells, and vertical surrounding-gate transistors are discussed in this article. Nanometer-scale growth also enabled the integration of III-V NWs on Si regardless of lattice mismatches. These demonstrated achievements should have broad applications in laser diodes, photodiodes, and high-electron mobility transistors with functionality on Si not made possible with conventional Si-CMOS techniques.
  • M. T. Elm, P. J. Klar, S. Ito, S. Hara, H. -A. Krug von Nidda
    PHYSICAL REVIEW B 84 3 035309-1 - 035309-8 2011年07月 [査読有り][通常論文]
     
    The angle-dependent behavior of the magnetoresistance of ordered arrays of nanoclusters is studied. The arrays consist of single elongated MnAs nanoclusters, which were deposited on the (111) B GaAs substrate by selective-area metal-organic vapor phase epitaxy, which yields control of the position on the substrate as well as of the shape of the nanoclusters. Ferromagnetic resonance measurements were carried out in order to investigate the magnetic anisotropy of the nanoclusters, which is strongly determined by the cluster shape. Angle-dependent magnetotransport measurements were performed at T = 15 K. The magnetic field was rotated in three different geometries, one parallel and two perpendicular to the sample surface. At low magnetic fields the nanoclusters show nearly no influence on the transport through the matrix. However, at high magnetic fields the magnetization orientation of the nanoclusters affects the transport behavior of the sample due to the influence of the clusters' dipolar field on the electronic states in the matrix. The experimental results obtained can be understood qualitatively by considering not only the transport properties of the GaAs matrix but also an average magnetization of the MnAs nanoclusters, whose orientation is determined by the magnetic anisotropy.
  • Katsuhiro Tomioka, Tomotaka Tanaka, Shinjiro Hara, Kenji Hiruma, Takashi Fukui
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS 17 4 1112 - 1129 2011年07月 [査読有り][招待有り]
     
    III-V nanowires (NWs) on Si are promising building blocks for future nanoscale electrical and optical devices on Si platforms. We present position-controlled and orientation-controlled growth of InAs, GaAs, and InGaAs NWs on Si by selective-area growth, and discuss how to control growth directions of III-V NW on Si. Basic studies on III-V/Si interface showing heteroepitaxial growth with misfit dislocations and coherent growth without misfit dislocations are presented. Finally, we demonstrate the integrations of a III-V NW-based vertical surrounding-gate field-effect transistor and light-emitting diodes array on Si. These demonstrations could have broad applications in high-electron-mobility transistors, laser diodes, and photodiodes with a functionality not enabled by conventional NW devices.
  • M. T. Elm, P. J. Klar, S. Ito, S. Hara
    PHYSICAL REVIEW B 83 23 235305-1 - 235305-6 2011年06月 [査読有り][通常論文]
     
    Two different arrangements of cluster chains consisting of elongated MnAs nanoclusters were deposited on (111)B-GaAs substrates by selective-area metal-organic vapor-phase epitaxy. This method allows one a controlled positioning of the nanoclusters on the substrate, offering the possibility to investigate the influence of the nanocluster arrangement on the transport properties of granular hybrid structures. Magnetotransport measurements at low temperatures were performed for both cluster-chain arrangements prepared. In contrast to GaAs: Mn/MnAs hybrids with a random cluster distribution, which usually show a negative magnetoresistance at low temperatures, large positive magnetoresistance effects are observed for cluster-chain arrangements at 15 K. Furthermore, the arrangements exhibit a rectifying behavior of the current-voltage characteristics in the presence of an external magnetic field. The magnitude of both effects correlates with the arrangement of the chains on the substrate and can be explained qualitatively by assuming hopping conduction as the dominant transport mechanism.
  • Keita Komagata, Shinjiro Hara, Shingo Ito, Takashi Fukui
    JAPANESE JOURNAL OF APPLIED PHYSICS 50 6 06GH01-1 - 06GH01-6 2011年06月 [査読有り][通常論文]
     
    The authors report on the ordered planar arrangements of ferromagnetic MnAs/AlGaAs nanocluster (NC) composites grown on partially SiO2-masked GaAs (111) B substrates by selective-area metal-organic vapor phase epitaxy for lateral magnetoresistive device applications. Each of the NCs in the composites has an elongated shape and a different size to control their magnetized directions and coercive forces. By designing and optimizing the initial SiO2-mask openings formed by electron beam lithography on the template wafers, we fabricate elongated NC composites with a spatial gap of 5 to 10 nm between two NCs and an elongated NC connected to a relatively large MnAs NC electrode. Cross-sectional lattice images taken with a transmission electron microscope show that the interfaces between MnAs and AlGaAs layers of the NCs are atomically abrupt. Magnetic force microscopy at room temperature reveals that the magnetized directions in each of the NC composites are rotated by around 180 degrees when the applied direction of the external magnetic fields is rotated in the opposite direction. (C) 2011 The Japan Society of Applied Physics
  • 吉岡 真治, Thaer Moustafa Dieb, 冨岡 克広, 原 真二郎, 福井 孝志
    2011年度(第25回)人工知能学会全国大会 (JSAI 2011), 盛岡, 2011年6月1日-3日, 発表論文集, 3G4-1 (4pp.) 2011 0 3G4-1-1 - 3G4-1-4 一般社団法人 人工知能学会 2011年06月 [査読有り][通常論文]
     

    本研究では、 ナノ結晶デバイスの開発プロセスにおけるデバイス生成のための実験記録を情報源として、試行錯誤の背後にある暗黙知の明示化を支援する実験記録データの活用システムの構築を目指している。 本発表では、実験記録データに評価データ、背景情報などのメタデータを追加する事を提案し、その活用方法について述べる。

  • Shota Fujisawa, Takuya Sato, Shinjiro Hara, Junichi Motohisa, Kenji Hiruma, Takashi Fukui
    JAPANESE JOURNAL OF APPLIED PHYSICS 50 4 04DH03-1 - 04DH03-6 2011年04月 [査読有り][通常論文]
     
    We developed a growth method for forming a GaAs quantum well (QW) buried in GaAsP/GaAs heterostructure nanowires (NWs) by selective-area metal organic vapor phase epitaxy (SA-MOVPE). To determine the optimum growth conditions of GaAsP NWs, we varied the [(C4H9)PH2 + AsH3]/[(CH3)(3)Ga] ratio between 20 and 185. As a result, we could obtain NWs with good height uniformity when the ratio was 20. To form such NWs with a GaAs QW, we fabricated GaAs NWs of about 60 nm in diameter before the GaAsP growth. The NW uniformity was considerably improved by introducing GaAs growth. Photoluminescence (PL) measurements at 4.2 K indicated that the QW had a spectral peak about 150 meV higher than the acceptor-related recombination emission peak of GaAs, which is near 1.5 eV. The QW thickness estimated from the spectral peak energy of PL was 5.2 nm, which is in fair agreement with the value calculated from the GaAs growth rate. (C) 2011 The Japan Society of Applied Physics
  • Masatoshi Yoshimura, Katsuhiro Tomioka, Kenji Hiruma, Shinjiro Hara, Junichi Motohisa, Takashi Fukui
    JOURNAL OF CRYSTAL GROWTH 315 1 148 - 151 2011年01月 [査読有り][通常論文]
     
    We grew on GaAs(1 1 1)B InGaAs nanowires with lattice-mismatched composition using catalyst-free selective-area metalorganic vapor phase epitaxy and analyzed the effect of lattice mismatch on crystal structure and quality. An energy dispersive X-ray microscopy analysis indicated that the atomic contents of group-III atoms, Ga and In, were constant with little dispersion along a 2 mu m-long nanowire. This indicates that a possible difference in migration length between In and Ga atoms on the sidewall facets has no effect on the compositional distribution along the nanowires with lengths of up to 2 mu m. Photoluminescence spectra for InGaAs planar layers grown on GaAs(1 0 0) and GaAs(1 1 1)B substrates showed no peak corresponding to the InGaAs band-edge emission, due to lattice mismatch between the layers and the substrate. However, the nanowires with a lattice mismatch of 2.1% showed a strong and sharp band-edge emission peak at 1.12 eV. This means that crystal quality of the InGaAs nanowires was better than that of the planar layers for a lattice-mismatched system. (C) 2010 Elsevier B.V. All rights reserved.
  • Y. Takayama, K. Tomioka, S. Hara, T. Fukui, J. Motohisa
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 2 8 2 272 - 274 2011年 [査読有り][通常論文]
     
    We report on the selective-area metalorganic vapor phase epitxial growth of GaSb on (111)-oriented GaAs substrates partially covered with a SiO2 mask layer. The mask pattern consisted of periodic circular openings with diameter ranging from 200 to 500 nm and pitch ranging from 500 nm to 3 mu m. Selective-area growth of GaSb was achieved on the (111) A substrates, while GaSb was grown in few parts of the mask openings on the (111) B substrate. In addition, exposure to an Sb-precursor prior to the growth significantly affected the coverage of GaSb of the mask opening region, and it increases (decreases) on the (111) A ((111) B) substrate as compared to AsH3 exposure. The results are explained based on a model of exchange of Sb-As at the initial stage of growth. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
  • Junichi Motohisa, Katsuhiro Tomioka, Bin Hua, Kumar S.K. Varadwaj, Shinjiroh Hara, Kenji Hiruma, Takashi Fukui
    Advances in III-V Semiconductor Nanowires and Nanodevices 145 - 157 2011年 [査読有り][通常論文]
     
    We describe the growth and optical properties of III-V semiconductor nanowires and their application to nanoscale photonic devices such as Fabry-Perot cavity, waveguides, optically-pumped lasers, and lightemitting diodes. The nanowires were grown by selective-area metalorganic vapor phase epitaxy (SA-MOVPE) on the (111) oriented substrates. Nanowires containing heterostructures in their radial direction, that is, core-shell heterostructures, have also been realized by controlling the growth mode during SA-MOVPE. The nanowires were characterized by micro-photoluminescence measurements and those detached from the grown substrate showed resonant peaks associated with Fabry-Perot cavity modes. It was simultaneously shown that core-shell hetereostructured nanowires exhibited stronger photoluminescence than bare nanowires due to reduced surface non-radiative recombination. Furthermore, core-shell nanowires exhibited lasing oscillation originating from the cavity formed by both end facets at pulsed-laser excitation. Meanwhile, electroluminescence from core-shell nanowires was also demonstrated. © 2011 Bentham Science Publishers Ltd. All rights reserved.
  • Atsushi Hayashida, Takuya Sato, Shinjiro Hara, Junichi Motohisa, Kenji Hiruma, Takashi Fukui
    JOURNAL OF CRYSTAL GROWTH 312 24 3592 - 3598 2010年12月 [査読有り][通常論文]
     
    We developed a growth method for forming a GaAs quantum well contained in an AlGaAs/GaAs heterostructure nanowire using selective-area metal organic vapor phase epitaxy To find the optimum growth condition of AlGaAs nanowires we changed the growth temperature between 800 and 850 C and found that best uniformity of the shape and the size was obtained near 800 C but lateral growth of AlGaAs became larger which resulted in a wide GaAs quantum well grown on the top (1 1 1)B facet of the AlGaAs nanowire To form the GaAs quantum well with a reduced lateral size atop the AlGaAs nanowire a GaAs core nanowire about 100 nm in diameter was grown before the AlGaAs growth which reduced the lateral size of AlGaAs to roughly half compared with that without the GaAs core Photoluminescence measurement at 42 K indicated spectral peaks of the GaAs quantum wells about 60 meV higher than the acceptor-related recombination emission peak of GaAs near 1 5 eV The photoluminescence peak energy showed a blue shift of about 15 meV from 1 546 to 1 560 eV as the growth time of the GaAs quantum well was decreased from 8 to 3 s Transmission electron microscopy and energy dispersive X-ray analysis of an AlGaAs/GaAs heterostructure nanowire indicated a GaAs quantum well with a thickness of 5-20 nm buried along the < 1 1 1 > direction between the AlGaAs shells showing a successful fabncation of the GaAs quantum well (C) 2010 Elsevier B V All rights reserved
  • Christian Heiliger, Michael Czerner, Peter J. Klar, Shinjiroh Hara
    IEEE TRANSACTIONS ON MAGNETICS 46 6 1702 - 1704 2010年06月 [査読有り][通常論文]
     
    We propose planar magneto-electronic devices based on accurately positioned and shaped ferromagnetic MnAs nanoclusters in NiAs structure. The prototype discussed consists of a small hexagon-shaped cluster sandwiched between two elongated clusters with fixed magnetic orientations. The magnetization of the center cluster is free and can be rotated by an external magnetic field. Our ab initio calculations yield a strong dependence of the conductance as a function of the direction of the external magnetic field which exhibits an in-plane symmetry of 360 degrees.
  • 吉岡 真治, 冨岡 克広, 原 真二郎, 福井 孝志
    2010年度(第24回)人工知能学会全国大会 (JSAI 2010), 長崎, 2010年6月9日-11日, 発表論文集, 1B3-3 (4pp.) 2010 0 1B3-3-1 - 1B3-3-4 一般社団法人 人工知能学会 2010年06月 [査読有り][通常論文]
     

    ナノ結晶デバイスの開発プロセスにおいては、製造プロセスがデバイスの性質に大きな影響を与えるため、試行錯誤的な実験の繰り返しが必要とされる。しかし、その試行錯誤に関する知識はあまり明示化されていないため、熟練者の「匠の技」である暗黙知に依存している。本研究では、デバイス生成のための実験を行った記録を情報源として、この暗黙知の明示化を支援する実験記録データの活用システムを提案する。

  • Katsuhiro Tomioka, Junichi Motohisa, Shinjiroh Hara, Kenji Hiruma, Takashi Fukui
    NANO LETTERS 10 5 1639 - 1644 2010年05月 [査読有り][通常論文]
     
    We report on integration of GaAs nanowire-based light-emitting-diodes (NW-LEDs) on Si substrate by selective-area metalorganic vapor phase epitaxy. The vertically aligned GaAs/AlGaAs core-multishell nanowires with radial p-n junction and NW-LED array were directly fabricated on Si. The threshold current for electroluminescence (EL) was 0.5 mA (current density was approximately 0.4 A/cm(2)), and the EL intensity superlinearly increased with increasing current injections indicating superluminescence behavior. The technology described in this letter could help open new possibilities for monolithic- and on-chip integration of III-V NWs on Si.
  • Yusuke Kitauchi, Yasunori Kobayashi, Katsuhiro Tomioka, Shinjiro Hara, Kenji Hiruma, Takashi Fukui, Junichi Motohisa
    NANO LETTERS 10 5 1699 - 1703 2010年05月 [査読有り][通常論文]
     
    We study the catalyst-free growth of InP nanowires using selective-area metalorganic vapor phase epitaxy (SA-MOVPE) and show that they undergo transition of crystal structures depending on the growth conditions. InP nanowires were grown on InP substrates where the mask for the template of the growth was defined. The nanowires were grown only in the opening region of the mask. It was found that uniform array of InP nanowires with hexagonal cross section and with negligible tapering were grown under two distinctive growth conditions. The nanowires grown in two different growth conditions were found to exhibit different crystal structures. It was also found that the orientation and size of hexagon were different, suggesting that the difference of the growth behavior. A model for the transition of crystal structure is presented based on the atomic arrangements and termination of InP surfaces. Photoluminescence measurement revealed that the transition took place for nanowires with diameters up to 1 mu m.
  • M. T. Elm, C. Michel, J. Stehr, D. M. Hofmann, P. J. Klar, S. Ito, S. Hara, H. -A. Krug von Nidda
    JOURNAL OF APPLIED PHYSICS 107 1 013701-1 - 013701-5 2010年01月 [査読有り][通常論文]
     
    Random arrangements of ferromagnetic MnAs nanoclusters were deposited on (111)B-GaInAs surfaces by standard metal-organic vapor-phase epitaxy (MOVPE). Ordered arrangements of MnAs nanoclusters and cluster chains were obtained by selective-area MOVPE on prepatterned (111)B-GaAs substrates. This new method enables one to control the arrangement of nanoclusters in the growth process offering interesting opportunities to tune the properties of individual MnAs clusters as well as the interaction between the carriers in the surrounding semiconductor matrix and the clusters. The magnetic anisotropy of the MnAs clusters was investigated by magnetic force microscopy and ferromagnetic resonance measurements. The in-plane magnetic anisotropy is mainly determined by the interplay of cluster shape and magnetocrystalline anisotropy while the hard magnetic axis of the clusters is perpendicular to the sample plane independent of cluster shape. The magnetotransport measurements demonstrate that the cluster arrangements strongly influence the transport properties.
  • Tomotaka Tanaka, Katsuhiro Tomioka, Shinjiroh Hara, Junichi Motohisa, Eiichi Sano, Takashi Fukui
    APPLIED PHYSICS EXPRESS 3 2 025003-1 - 025003-3 2010年 [査読有り][通常論文]
     
    We report on the fabrication and characterization of vertical InAs nanowire channel field effect transistors (FETs) with high-k/metal gate-all-around structures. Single InAs nanowires were grown on Si substrates by the selective-area metalorganic vapor phase epitaxy method. The resultant devices exhibited n-channel FET characteristics with a threshold voltage of around -0.1 V. The best device exhibited maximum drain current (I(DS, max)/w(G)), maximum transconductance (g(m, max)/w(G)), on-off ratio (I(ON/OFF)), subthreshold slope (SS) of 83 mu A/mu m, 83 mu S/mu m, 10(4), and 320 mV/decade, respectively, for a nanowire diameter of 100 nm. (C) 2010 The Japan Society of Applied Physics DOI: 10.1143/APEX.3.025003
  • Masatoshi Yoshimura, Katsuhiro Tomioka, Kenji Hiruma, Shinjiro Hara, Junichi Motohisa, Takashi Fukui
    JAPANESE JOURNAL OF APPLIED PHYSICS 49 4 04DH08-1 - 04DH08-5 2010年 [査読有り][通常論文]
     
    We fabricated InGaAs nanowires (NWs) in SiO2 mask openings on a GaAs(111) B substrate at growth temperatures of 600-700 degrees C using catalyst-free selective-area metal organic vapor phase epitaxy. At a growth temperature of 600 degrees C, particle-like depositions occurred, but they decreased in number and density when the growth temperature was increased to 650 degrees C and disappeared above 675 degrees C. The heights and growth rates of the NWs increased when the growth temperature was increased and the mask opening diameter was decreased from 300 to 50 nm. Photoluminescence (PL) spectra measured for the NWs indicated a blue shift in the peak from 0.95 to 1.3 eV as the growth temperature was increased from 600 to 700 degrees C, indicating an increase in the Ga composition from 62 to 88% in the InGaAs NWs. (C) 2010 The Japan Society of Applied Physics
  • T. Fukui, K. Tomioka, S. Hara, K. Hiruma, J. Motohisa
    PROCEEDINGS OF 2010 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES (COMMAND 2010) 209 - 210 2010年 [査読有り][通常論文]
     
    We fabricated various kinds of III-V semiconductor nanowires and core-shell nanowires using selective area metalorganic vapor phase epitaxy (SA-MOVPE) on (111) oriented substrates, such as GaAs, GaAs/AIGaAs, InP, InPllnAsllnP on III-V substrates, and InAs and GaAs on Si. As for device applications, we fabricated GaAs/GaAsP core-shell nanowire photo-excited lasers, and InP core-shell pn junction solar cells. We also demonstrate III-V semiconductor nano-wires grown on Si (111) substrates.
  • J. Motohisa, B. Hua, K. S. K. Varadwaj, S. Hara, K. Hiruma, T. Fukui
    2010 IEEE PHOTONICS SOCIETY WINTER TOPICALS MEETING SERIES 139 - + 2010年 [査読有り][通常論文]
  • Hiroatsu Yoshida, Keitaro Ikejiri, Takuya Sato, Shinjiroh Hara, Kenji Hiruma, Junichi Motohisa, Takashi Fukui
    JOURNAL OF CRYSTAL GROWTH 312 1 52 - 57 2009年12月 [査読有り][通常論文]
     
    We analyzed twin defects in GaAs nanowires as thin as 100-400 nm and tetrahedral structures as small as 1.0 mu m, which were selectively grown by metal organic vapour-phase epitaxy (MOVPE) within a SiO(2) mask window fabricated on GaAs(1 1 1)B substrates. In particular, we focused on the correlation between the twins and GaAs(1 1 1)B surface reconstructions. We confirmed that the shape of GaAs cyrstals selectively grown on GaAs(1 1 1)B substrates changed from hexagonal nanowires to truncated tetrahedra when the size of the mask opening was increased from 100 to 1000 nm under the same growth conditions. The shape also changed from tetrahedral to hexagonal with decreasing growth temperature (T(g) : 600-800 degrees C) and with increasing arsine (AsH(3)) partial pressure (1.0 x10(-4) to 5.0 x 10(-4) atm). Rotational twins around the < 1 1 1 > axis were found in the tetrahedra by transmission electron microscopy (TEM) and scanning electron microscopy observations. In addition, the probability of twins developing in the tetrahedra increased with decreasing mask opening size, with decreasing T., and with increasing AsH(3) partial pressure. The TEM study also revealed the existence of a high density of rotational twins in the nanowires, and their density increased with decreasing nanowire diameter, suggesting a correlation between the twins and the shape/size of GaAs crystals. These findings were semi-quantitatively compared with a reported phase diagram for GaAs(1 1 1)B surface reconstruction. By analyzing the relationship between twin development and MOVPE conditions, we found that the shape change of GaAs crystals on GaAs(1 1 1)B and the formation of twins coincided well with the transition of GaAs surface reconstruction between the (2 x 2) and (root 19 x root 19) structures. (C) 2009 Elsevier B.V. All rights reserved.
  • Shingo Ito, Shinjiroh Hara, Toshitomo Wakatsuki, Takashi Fukui
    APPLIED PHYSICS LETTERS 94 24 243117  2009年06月 [査読有り][通常論文]
     
    The authors report the buildup fabrication and magnetic domain characterizations of anisotropic-shaped MnAs nanoclusters position-controlled on partially SiO(2)-masked GaAs (111)B substrates by selective-area metal-organic vapor phase epitaxy. Magnetic force microscopy reveals that both the symmetric- and anisotropic-shaped nanoclusters show spontaneous magnetization at room temperature. Some of the nanoclusters show a single magnetic domain, in which magnetized directions are along one of the a-axes of NiAs-type MnAs, after the external magnetic fields up to 3500 Gauss are applied in-plane. The magnetic domains are well controlled by introducing both magnetocrystalline and shape magnetic anisotropies in the anisotropic-shaped nanoclusters.
  • Katsuhiro Tomioka, Yasunori Kobayashi, Junichi Motohisa, Shinjiroh Hara, Takashi Fukui
    NANOTECHNOLOGY 20 14 145302-1-145302-8  2009年04月 [査読有り][通常論文]
     
    We report on selective-area growth of vertically aligned GaAs nanowires on Si(111) substrate. Modification of the initial Si(111) surface by pretreatment under an AsH(3) atmosphere and low-temperature growth of GaAs were important for controlling the growth orientations of the GaAs nanowire on the Si(111) surface. We also found that the size of openings strongly affected the growth morphology of GaAs nanowires on Si(111). Small diameter openings reduced the antiphase defects and improved the optical properties in the GaAs nanowires. Moreover, we realized coherent growth without misfit dislocation at the GaAs/Si interface. Finally, we demonstrated fabrication of a GaAs/AlGaAs core-shell nanowire array on a Si surface and revealed that the luminescence intensity was markedly enhanced by passivation effects. These results are promising for future III-V nanowire-based optoelectronic integration on Si platforms.
  • Toshitomo Wakatsuki, Shinjiro Hara, Shingo Ito, Daichi Kawamura, Takashi Fukui
    JAPANESE JOURNAL OF APPLIED PHYSICS 48 4 04C137-1-04C137-5  2009年04月 [査読有り][通常論文]
     
    We report the position-controlled formation and the growth direction control of MnAs nanoclusters (NCs) on partially SiO(2)-masked GaAs (111)B substrates by selective-area metal-organic vapor phase epitaxy (SA-MOVPE). At a relatively low growth temperature of 750 degrees C, MnAs NCs were grown not only in the opening regions Of SiO(2) mask patterns but on SiO(2) mask surfaces. The average density of unintentional nanoprecipitates deposited on SiO(2) mask surfaces decreased with increasing V/Mn ratio of the supplied source gases. At a relatively high growth temperature of 850 degrees C, MnAs NCs were selectively grown in the opening regions of the SiO(2) mask patterns. The MnAs NCs with well-defined crystal facets had the hexagonal NiAs-type crystal structure. The top and the six sidewall facets were attributable to {0001} and {1011} as determined by cross-sectional transmission electron microscopy and electron beam diffraction measurements. It was confirmed that the c-axis, (0001), of the MnAs NCs was parallel to the (111)B directions of zinc-blend-type GaAs layers. The growth rate of crystal facets of the NCs was well-controlled by adjusting V/Mn ratio for MnAs growth. Magnetic force microscopy of NCs revealed that the NCs showed ferromagnetism at room temperature. Some of the MnAs NCs behaved as nanomagnets with a single magnetic domain. (C) 2009 The Japan Society of Applied Physics
  • Hajime Goto, Katsutoshi Nosaki, Katsuhiro Tomioka, Shinjiro Hara, Kenji Hiruma, Junichi Motohisa, Takashi Fukui
    APPLIED PHYSICS EXPRESS 2 3 035004-1-035004-3  2009年03月 [査読有り][通常論文]
     
    We report on the formation of core-shell pn junction InP nanowires using a catalyst-free selective-area metalorganic vapor-phase epitaxy (SA-MOVPE) method. A periodically aligned dense core-shell InP nanowire array was fabricated and used in photovoltaic device applications. The device exhibited open-circuit voltage (V-OC), short-circuit current (I-SC) and fill factor (FF) levels of 0.43 V, 13.72 mA/cm(2) and 0.57, respectively, which indicated a solar power conversion efficiency of 3.37% under AM1.5G illumination. This study demonstrates that high quality core-shell structure nanowire fabrication is possible by SA-MOVPE and that the nanowire arrays can be used in integrated nanowire photovoltaic devices. (C) 2009 The Japan Society of Applied Physics DOI: 10.1143/APEX.2.035004
  • Bin Hua, Junichi Motohisa, Yasunori Kobayashi, Shinjiroh Hara, Takashi Fukui
    NANO LETTERS 9 1 112 - 116 2009年01月 [査読有り][通常論文]
     
    Highly uniform GaAs/GaAsP coaxial nanowires were prepared via selective-area metal organic vapor phase epitaxy. Photoluminescence spectra from a single nanowire indicate that the obtained heterostructures can produce near-infrared (NIR) lasing under pulsed light excitation. The end facets of a single nanowire form a natural mirror surface to create an axial cavity, which realizes resonance and give stimulated emission. This study is a considerable advance toward the realization of nanowire-based NIR light sources.
  • Takuya Sato, Yasunori Kobayashi, Junichi Motohisa, Shinjiro Hara, Takashi Fukui
    JOURNAL OF CRYSTAL GROWTH 310 23 5111 - 5113 2008年11月 [査読有り][通常論文]
     
    We studied the growth of InGaAs nanowires on InP(1 1 1)B substrates by selective-area metalorganic vapor-phase epitaxy (SA-MOVPE). We proposed a growth model of InGaAs nanowires based on the observation Of growth under various condition. We investigated the composition of InGaAs nanowires using micro-photoluminescence and confirmed the relation between composition of InGaAs nanowires and the growth rate. (C) 2008 Elsevier B.V. All rights reserved.
  • Katsuhiro Tomioka, Junichi Motohisa, Shinjiroh Hara, Takashi Fukui
    NANO LETTERS 8 10 3475 - 3480 2008年10月 [査読有り][通常論文]
     
    We report on control of growth directions of InAs nanowires on Si substrate. We achieved to integrate vertical InAs nanowires on Si by modifying initial Si(111) surface in selective-area metal-organic vapor phase epitaxy with flow-rate modulation mode at low temperature. Cross-sectional transmission electron microscope and Raman scattering showed that misfit dislocation with local strains were accommodated in the interface.
  • Keitaro Ikejiri, Takuya Sato, Hiroatsu Yoshida, Kenji Hiruma, Junichi Motohisa, Shinjiroh Hara, Takashi Fukui
    NANOTECHNOLOGY 19 26 265604-1-265604-8  2008年07月 [査読有り][通常論文]
     
    GaAs nanowires were selectively grown by metal-organic vapour-phase epitaxy within a SiO(2) mask window pattern fabricated on a GaAs( 111) B substrate surface. The nanowires were 100-3000 nm in height and 50-300 nm in diameter. The height decreased as the mask window diameter was increased or the growth temperature was increased from 700 to 800 degrees C. The dependence of the nanowire height on the mask window diameter was compared with a calculation, which indicated that the height was inversely proportional to the mask window diameter. This suggests that the migration of growth species on the nanowire side surface plays a major role. Tetrahedral GaAs grew at an early stage of nanowire growth but became hexagonal as the growth process continued. The calculated change in Gibbs free energy for nucleation growth of the crystals indicated that tetrahedra were energetically more favourable than hexagons. Transmission and scanning electron microscopy analyses of a GaAs nanowire showed that many twins developed along the [111] B direction, suggesting that twins had something to do with the evolution of the nanowire shape from tetrahedron to hexagon.
  • Shinji Hashimoto, Junichiro Takeda, Akihiro Tarumi, Shinjiro Hara, Junichi Motohisa, Takashi Fukui
    JAPANESE JOURNAL OF APPLIED PHYSICS 47 5 3354 - 3358 2008年05月 [査読有り][通常論文]
     
    We report on a promising approach for the formation of compound semiconductor two-dimensional photonic crystal slabs utilizing selective-area metal-organic vapor phase epitaxy (SA-MOVPE). The selective-area growth process for the submicron-sized air holes of InP-based semiconductors was investigated on InP(111)A and (111)B substrates with a periodic array of hexagonal SiO(2) masks. By optimizing growth conditions, a highly uniform array of hexagonal air holes in InP and InGaAs with a 500 nm pitch was formed on (111)B substrates. We also fabricated air-hole arrays with InP/InGaAs/InP double heterostructures on InP(111)B, and confirmed photoluminescence from an InGaAs quantum well at low temperatures. [DOI: 10.1143/JJAP.47.3354]
  • Shinjiroh Hara, Daichi Kawamura, Hiroko Iguchi, Junichi Motohisa, Takashi Fukui
    JOURNAL OF CRYSTAL GROWTH 310 7-9 2390 - 2394 2008年04月 [査読有り][通常論文]
     
    The authors report on the self-assembly and the selective-area formation of ferromagnetic MnAs nanoclusters (NCs) on III-V compound semiconductors (1 1 1) B surfaces by metal-organic vapor-phase epitaxy (MOVPE). Hexagonal MnAs NCs with well-defined crystal facets and a high degree of uniformity are self-assembled on planar GaInAs surfaces grown on InP (1 1 1) B substrates. The lateral size and height of typical NCs are 100 and 47 nm, respectively. Lattice images taken by transmission electron microscopy (TEM) show that the top surfaces of the MnAs NCs are atomically flat, and that the interfaces between the NCs and the GaInAs layers are abrupt. We have, in addition, controlled the positions of the MnAs NCs by selective-area MOVPE on GaAs (I 1 1) B substrates partially masked with SiO2 thin films. The hexagonal MnAs NCs do not grow on the SiO2 surfaces, but grow successfully on the GaAs ones, under a relatively high growth temperature condition of 850 degrees C. (C) 2007 Elsevier B.V. All rights reserved.
  • Hiroko Iguchi, Shinjiroh Hara, Junichi Motohisa, Takashi Fukui
    Jpn. J. Appl. Phys. 47 4 3253 - 3256 2008年04月 [査読有り][通常論文]
     
    The authors report that the formation of MnAs nanoclusters (NCs) on GaInAs (1 1 1)A surfaces strongly depends on metal-organic vapor phase epitaxial growth conditions. It was confirmed from the atomic force microscope observation that deep holes were formed on the surfaces under low V/Mn ratio and high growth temperature conditions, in addition to the formation of MnAs NCs. From the results of cross-sectional transmission electron microscope observation, these deep holes were formed on the underlying GaInAs layers, and MnAs NCs were embedded in the GaInAs (1 1 1)A layers. The formation of these embedded MnAs NCs was possibly caused by the phenomenon of "endotaxy". From the experimental results of thermal treatments of the samples, it was revealed that the deep holes were formed on the GaInAs (1 1 1)A surfaces even after the thermal annealing in the atmosphere of Mn source gas and hydrogen. Therefore, we concluded that high AsH(3) partial pressure (V/Mn ratio) conditions were required for the MnAs growth on GaInAs (1 1 1)A surfaces.
  • B. Hua, J. Motohisa, S. Hara, T. Fukui
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9 5 9 2722 - + 2008年 [査読有り][通常論文]
     
    We report the formation of Fabry Perot microcavity in single GaAs nanowire prepared by selective-area metalorganic vapor phase epitaxy. The fabricated nanowires with hexagonal cross section are highly uniform and vertically oriented. Microphotoluminescence measurements of single GaAs nanowire exhibit several periodic peaks in the intensity, which are suggestive of the longitudinal modes of a Fabry-Perot cavity. The cavity is formed along the length of the nanowire and the (111) facets of both ends act as reflecting mirrors in this case. (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
  • Growth of InGaAs Nanowires by Selective-Area Metal-Organic Vapor-Phase Epitaxy
    Takuya Sato, Junichi Motohisa, Jinichiro Noborisaka, Shinjiro Hara, Takashi Fukui
    J. Cryst. Growth Vol. 310 Nos. 7-9 2359 - 2364 2008年 [査読有り][通常論文]
  • 有機金属気相選択成長法によるInGaAs系ナノワイヤの形成とその電気的評価
    登坂 仁一郎, 佐藤 拓也, 本久 順一, 原 真二郎, 福井 孝志
    2007年 電子情報通信学会 技術研究報告, 札幌, 2008年1月30日-31日, Vol. 107, No. 473, ED2007-238, pp. 5-10 107 473 5 - 10 2008年01月 [査読有り][通常論文]
  • Ying Ding, Junichi Motohisa, Bin Hua, Shinjiroh Hara, Takashi Fukui
    NANO LETTERS 7 12 3598 - 3602 2007年12月 [査読無し][通常論文]
     
    Hexagonal cylindrical InP nanowires with a wurtzite structure were fabricated by selective-area metalorganic vapor-phase epitaxy (SA-MOVPE). The microcavity modes and waveguides in InP nanowires were investigated by photoluminesence (PL) spectra. Optical mode analysis for InP nanowires with different lengths reveals the axial Fabry-Perot cavity in InP nanowires, which were formed between the two end facets of nanowires. In addition, T-branch subwavelength guiding and optical coupling in InP nanowires were observed.
  • Katsuhiro Tomioka, Junichi Motohisa, Shinjiroh Hara, Takashi Fukui
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 46 45-49 L1102 - L1104 2007年12月 [査読有り][通常論文]
     
    Crystallographic structure of InAs nanowires, which were grown by selective-area metalorganic vapor phase epitaxy on (111)B-oriented substrates, was investigated by transmission electron microscopy (TEM). The TEM images showed that the nanowires had many stacking faults along the growth direction. Statistical analysis of the atomic-layer stacking showed that InAs nanowires contained both zincblende and wurtzite crystal phases, whose transition took place in every one to three monolayers. This specific crystal phase transition resulted in peculiar electron diffraction patterns. The stacking of the atomic layers had no distinct correlation with the diameter of the nanowires.
  • Ying Ding, Junichi Motohisa, Bin Hua, Shinjiroh Hara, Takashi Fukui
    NANO LETTERS 7 12 3598 - 3602 2007年12月 [査読有り][通常論文]
     
    Hexagonal cylindrical InP nanowires with a wurtzite structure were fabricated by selective-area metalorganic vapor-phase epitaxy (SA-MOVPE). The microcavity modes and waveguides in InP nanowires were investigated by photoluminesence (PL) spectra. Optical mode analysis for InP nanowires with different lengths reveals the axial Fabry-Perot cavity in InP nanowires, which were formed between the two end facets of nanowires. In addition, T-branch subwavelength guiding and optical coupling in InP nanowires were observed.
  • Jinichiro Noborisaka, Takuya Sato, Junichi Motohisa, Shinjiro Hara, Katsuhiro Tomioka, Takashi Fukui
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 46 11 7562 - 7568 2007年11月 [査読有り][通常論文]
     
    Single InGaAs nanowire-top-gate metal-semiconductor field-effect transistors (MESFETs) were fabricated and characterized. Silicon-doped n-InGaAs nanowires (with a typical diameter of 100nm) were grown by catalyst-free selective-area metalorganic vapor-phase epitaxy (SA-MOVPE). The FETs of single nanowires on SiO2-coated Si substrates were fabricated by defining metal contacts at both ends of the nanowires and the metal top gate between contacts. According to the measurements of drain current-voltage and gate transfer characteristics, the top-gate MESFETs exhibited significant enhancements in device performance characteristics compared with FETs under back-gate operation; that is, a peak transconductance of 33 mS/mm and a current on-off ratio of 10(3) were obtained. A possibility for further improvements in FET characteristics was also considered.
  • Bin Hua, Junichi Motohisa, Ying Ding, Shinjiroh Hara, Takashi Fukui
    APPLIED PHYSICS LETTERS 91 13 131112-131112-3  2007年09月 [査読有り][通常論文]
     
    The authors present the formation of Fabry-Perot cavity in single GaAs nanowire prepared by selective-area metal organic vapor phase epitaxy. The grown nanowires with hexagonal cross section are highly uniform and vertically oriented. Microphotoluminescence measurements of single GaAs nanowire exhibit periodic peaks in the intensity, which are suggestive of the longitudinal modes of a Fabry-Perot cavity. The cavity is formed along the length of the nanowire and the (111) facets of both ends act as reflecting mirrors. Additionally, optical waveguides in GaAs nanowires were also observed. (C) 2007 American Institute of Physics.
  • Shinjiroh Hara, Takashi Fukui
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS 310 2 E833 - E835 2007年03月 [査読有り][通常論文]
     
    Self-assembled formation and magnetic characteristics of hexagonal MnAs nanoclusters on GaInAs/InP ( 1 1 1) layers have been investigated. Atomic force microscopy (AFM) shows that hexagonal MnAs nanoclusters with well-defined crystal facets are formed on GaInAs (1 1 1) A and B surfaces. The size, density and uniformity of the nanoclusters are controllable by changing the growth conditions of metal-organic vapor phase epitaxy (MOVPE). The samples with the nanoclusters on the (1 1 1) B layers show strong magnetic anisotropy. When the external magnetic fields are applied in a direction parallel to the InP (1 1 1) B wafer plane, the samples show clear ferromagnetic hysteresis curves. The observed magnetic properties indicate that the magnetic hard axis (c-axis) of the MnAs nanoclusters is perpendicular to the wafer planes. (C) 2006 Elsevier B. V. All rights reserved.
  • K. Tomioka, P. Mohan, J. Noborisaka, S. Hara, J. Motohisa, T. Fukui
    JOURNAL OF CRYSTAL GROWTH 298 644 - 647 2007年01月 [査読無し][通常論文]
     
    We report on size, shape, and position-controlled growth of high-density InAs nanowire array on InAs (I I I)B substrates by selective-area metalorganic vapor phase epitaxy (SA-MOVPE). In the optimized growth condition, uniform array of vertically aligned nanowires were formed. Growth carried under different growth temperatures, T-G, indicated that the lateral growth along the <(1) over bar 10 > directions was suppressed for T-G >= 540 degrees C to uniform array of thin InAs nanowires. This behavior is thought to be due to decreased number of bonds available for binding In atoms at step sites via desorption of As adatoms as growth temperature increased. Average height of the InAs nanowires found to depend significantly on the diameter of nanowires. (c) 2006 Elsevier B.V. All rights reserved.
  • K. Tomioka, P. Mohan, J. Noborisaka, S. Hara, J. Motohisa, T. Fukui
    JOURNAL OF CRYSTAL GROWTH 298 644 - 647 2007年01月 [査読有り][通常論文]
     
    We report on size, shape, and position-controlled growth of high-density InAs nanowire array on InAs (I I I)B substrates by selective-area metalorganic vapor phase epitaxy (SA-MOVPE). In the optimized growth condition, uniform array of vertically aligned nanowires were formed. Growth carried under different growth temperatures, T-G, indicated that the lateral growth along the <(1) over bar 10 > directions was suppressed for T-G >= 540 degrees C to uniform array of thin InAs nanowires. This behavior is thought to be due to decreased number of bonds available for binding In atoms at step sites via desorption of As adatoms as growth temperature increased. Average height of the InAs nanowires found to depend significantly on the diameter of nanowires. (c) 2006 Elsevier B.V. All rights reserved.
  • Keitaro Ikejiri, Jinichiro Noborisaka, Shinjiroh Hara, Junichi Motohisa, Takashi Fukui
    JOURNAL OF CRYSTAL GROWTH 298 616 - 619 2007年01月 [査読有り][通常論文]
     
    We studied the growth mechanism of GaAs nanowires in selective-area metalorganic vapor phase epitaxy (MOVPE) by investigating the dependences on substrate orientations and growth conditions. The nanowire structures were formed only on GaAs (I I l)B substrate under high temperature (750 degrees C) and low arsine partial pressure conditions. Structures selectively grown on substrates with various orientations always exhibited specific low-index facets such as { 110}, {111}A, and {111}B. It was also found that the appearance of these facets depended strongly on the growth conditions. Furthermore, we have observed a considerable lateral growth on the sidewalls of the nanowires when the growth temperature was lowered and arsine partial pressure was increased, indicating that the growth mode could be changed by the growth conditions. These results demonstrate that the growth mechanism of GaAs nanowires by SA-MOVPE is neither catalyst nor oxide assisted but by the formation of facets during growth. (c) 2006 Elsevier B.V. All rights reserved.
  • Shinjiroh Hara, Junichi Motohisa, Takashi Fukui
    JOURNAL OF CRYSTAL GROWTH 298 612 - 615 2007年01月 [査読有り][通常論文]
     
    We demonstrate the successful formation of ferromagnetic MnAs nanoclusters, self-assembled on GaInAs (I 1 1) B surfaces by metalorganic vapor phase epitaxy (MOVPE). The hexagonal MnAs nanoclusters show strong ferromagnetic coupling at room temperature when the external magnetic fields are applied in a direction parallel to the InP (I 1 1) B wafer planes. We have found that, on GaInAs/InP (I 1 1) B layers, the size and density of the MnAs nanoclusters strongly depend on the MOVPE growth conditions. The averaged height of the nanoclusters is decreased from 250 to 61 nm with increasing V/Mn ratios in a supply gas from 60 to 750, whereas their density is increased from 10(7) to 10(8) cm(-2). It is increased from 66 to 319 nm with increasing growth temperatures from 550 to 700 degrees C, whereas the density is decreased from 10(8) to 10(7) cm(-2). The size and density of the MnAs nanoclusters are controllable by optimizing MOVPE growth conditions, such as growth temperatures, V/Mn ratios and growth time. (c) 2006 Elsevier B.V. All rights reserved.
  • Shinjiroh Hara, Takashi Fukui
    APPLIED PHYSICS LETTERS 89 11 113111-1-113111-3  2006年09月 [査読有り][通常論文]
     
    The authors report the self-assembly of hexagonal MnAs nanoclusters on GaInAs (111)B surfaces by metal-organic vapor phase epitaxy. The ferromagnetic behavior of the nanoclusters dominates the magnetic response of the samples when magnetic fields are applied in a direction parallel to the wafer plane. For the magnetic fields applied in a direction perpendicular to the plane, diamagnetic characteristics are dominant. The results indicate that the c axis of the nanoclusters is perpendicular to the plane, and that their a axis is in plane. They are consistent with the results of crystallographic analysis, where the nanoclusters' c axis is shown to be along a GaInAs [-1-1-1] direction. (c) 2006 American Institute of Physics.
  • M Leuschner, PJ Klar, W Heimbrodt, WW Ruhle, S Hara, W Stolz, K Volz, T Kurz, A Loidl, HAK von Nidda
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS 301 2 478 - 488 2006年06月 [査読有り][通常論文]
     
    We have grown In0.54Ga0.46As:Mn/MnAs granular paramagnetic-ferromagnetic hybrid structures by metal-organic vapor-phase epitaxy. The MnAs clusters have a Curie temperature of about 320K. We have studied the optical activity of individual ferromagnetic MnAs clusters embedded in the paramagnetic In0.54Ga0.46As:Mn matrix at room temperature by far-field depolarization measurements. A scanning near-field optical microscopy set-up in constant height mode (approximate to 100nm above the sample surface) was used to achieve a high spatial resolution. Individual MnAs clusters rotate the linear polarization of the incoming light by almost 2 in this reflection geometry. This optical activity was analyzed in terms of birefringence and polar Kerr effect and correlated with the structural and magnetic properties of the MnAs clusters as determined by ferromagnetic resonance measurements. The optical activity of the MnAs clusters turns out to be dominated by linear birefringence caused by the uniaxial symmetry of the hexagonal crystal structure of MnAs. The polar Kerr effect plays a minor role in this experiment. (c) 2005 Elsevier B.V. All rights reserved.
  • J Noborisaka, J Motohisa, S Hara, T Fukui
    APPLIED PHYSICS LETTERS 87 9 2005年08月 [査読有り][通常論文]
     
    We fabricated GaAs/AlGaAs core-shell nanowires by using selective-area metalorganic vapor phase epitaxy. First, GaAs nanowires were selectively grown on partially masked GaAs (111)B substrates; then AlGaAs was grown to form freestanding heterostructured nanowires. Investigation of nanowire diameter as a function of AlGaAs growth time suggested that the AlGaAs was grown on the sidewalls of the GaAs nanowires, forming GaAs/AlGaAs core-shell structures. Microphotoluminescence measurements of GaAs and GaAs/AlGaAs core-shell nanowires reveal an enhancement of photoluminescence intensity in GaAs/AlGaAs core-shell structures. Based on these core-shell nanowires, AlGaAs nanotubes were formed by using anisotropic dry etching and wet chemical preferential etching to confirm the formation of a core-shell structure and to explore a new class of materials. (c) 2005 American Institute of Physics.
  • S Hara, A Kuramata
    NANOTECHNOLOGY 16 6 957 - 965 2005年06月 [査読有り][通常論文]
     
    We demonstrate the successful formation of ferromagnetic nanoclusters in Mn-incorporated GaInAs layers grown by metal-organic vapour phase epitaxy on InP(100) substrates under low growth temperature conditions below 450 degrees C. We find that MnAs nanoclusters with NiAs-type hexagonal crystallographic structures, which show ferromagnetic characteristics up to a relatively high temperature of about 305 K, are formed near the layer surfaces of Mn-incorporated GaInAs layers grown at 440 degrees C. After deposition of undoped InP layers on Mn-incorporated GaInAs layers, MnP nanoclusters with orthorhombic cubic crystallographic structures, in which 7% arsenic is incorporated, are formed in InP layers. The samples with MnP nanoclusters show strong ferromagnetic coupling up to about 305 K, although the Curie temperature of MnP bulk compounds is 291 K. Energy dispersive x-ray spectroscopy (EDS) indicates that Mn concentrations in InP and GaInAs layers surrounding MnP nanoclusters are almost negligible. WAS nanoclusters are also formed in Mn-incorporated GaAs layers grown under low growth temperature conditions of 450 degrees C on GaAs(100) substrates. From the results of magnetic characterizations with respect to growth temperatures of the samples, we found that all the Mn-incorporated GaAs layers grown at temperatures below 450 degrees C showed ferromagnetic behaviour.
  • S Hara, J Motohisa, J Noborisaka, J Takeda, T Fukui
    COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS 184 393 - 398 2005年 [査読有り][通常論文]
     
    We demonstrate formation of nano-wires with GaInAs/GaAs double hetero-structures using selective area metal-organic vapor phase epitaxy (SA-MOVPE) on SiO2 masked GaAs (111) B Substrates with periodic circular openings. Hexagonal nano-wires with six vertical {101} sidewall facets and a lateral size of around 70 to 260 nm are successfully fabricated on the masked GaAs (111) B substrates. Using microscopic area photoluminescence (mu-PL) measurements, PL emission from single GaInAs/GaAs double hetero-structure nano-wires is clearly identified at energy of around 1.28 eV. Full width at half maximum (FWHM) of the PL emission spectra from nano-wires is as narrow as around 10 meV.
  • J Motohisa, F Noborisaka, S Hara, M Inari, T Fukui
    Physics of Semiconductors, Pts A and B 772 877 - 878 2005年 [査読有り][通常論文]
     
    We report on a novel catalyst-free approach to form GaAs, AlGaAs and InGaAs nanowires and their arrays by selective area metalorganic vapor phase epitaxy (SA-MOVPE). At optimized growth conditions, extremely uniform array of GaAs or InGaAs nanowires with diameter d of 100 nm to 200 nm were grown on GaAs and InP substrates, respectively. It was found the the shape (height h and size d) depends strongly on the growth conditions as well as the size do and pitch a of the mask opening. In particular, the height h of the pillar becomes higher as d is reduced. On the other hand, h decreases as a is increased. Based on these results, we obtained hexagonal nanowires with much smaller d (similar to 50 nm) and longer h (> 6 mu m) by doing SA-MOVPE on masked substrates with smaller d(0).
  • S Hara, M Lampalzer, T Torunski, K Volz, W Treutmann, W Stolz
    JOURNAL OF CRYSTAL GROWTH 261 2-3 330 - 335 2004年01月 [査読有り][通常論文]
     
    We have investigated surface morphologies and cluster formation in Mn-incorporated (Galn)As layers grown by metal-organic vapor phase epitaxy (MOVPE) on InP (100) substrates. Whisker growth occurs on the layer surfaces under low V/III ratios and low growth temperature conditions. For temperatures above 500degreesC, MnAs-based cluster structures are formed near the (Galn)As layer surfaces. The MnAs-based clusters show an in-plane anisotropy in the magnetic characteristics. During the overgrowth of the MnAs-based clusters by undoped InP, a change in cluster composition to MnP presumably occurs as indicated by the change in the observed Curie temperature. (C) 2003 Elsevier B.V. All rights reserved.
  • S Hara, J Motohisa, T Fukui
    SOLID-STATE ELECTRONICS 42 7-8 1233 - 1238 1998年07月 [査読有り][通常論文]
     
    We have been demonstrating natural formation and characterization of InGaAs strained quantum wire (QWR) structures on coherent GaAs multiatomic steps grown by metalorganic vapor phase epitaxy (MOVPE). In this paper, we report on the optical properties of InGaAs QWRs. First, photoluminescence (PL) and photoluminescence excitation (PLE) spectra were taken at 77 K. PLE spectra showed the polarization anisotropy for excitation light with electric field parallel or perpendicular to the QWRs. Next, we measured the PL of InGaAs QWRs on GaAs multiatomic steps at 4.2 K, in magnetic fields, to examine the lateral confinement. It was found that the diamagnetic coefficient is 16 mu eV/T-2 and is much smaller than that of quantum well (QWL) on singular (001) GaAs substrates (45 mu eV/T-2), which suggests the presence of lateral confinement. We also succeeded for the first time in the pulsed laser operation of InGaAs QWRs on GaAs multiatomic steps at 77 K by current injection. (C) 1998 Elsevier Science Ltd. All rights reserved.
  • S Hara, J Motohisa, T Fukui
    ELECTRONICS LETTERS 34 9 894 - 895 1998年04月 [査読有り][通常論文]
     
    The authors report the first successful demonstration of self-organied InGaAs quantum wire (QWR) laser diodes (LDs) utilising GaAs multi-atomic steps at 77K by pulsed current injections. The lasing wavelength of InGaAs QWR-LDs is consistent with the peak position of photoluminescence spectra at 77K. When a cavity direction is perpendicular to the QWR's array direction, the threshold current density of InGaAs QWR-LDs is smaller than that of quantum well LDs.
  • M Akabori, J Motohisa, T Irisawa, S Hara, J Ishizaki, T Fukui
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 36 3B 1966 - 1971 1997年03月 [査読有り][通常論文]
     
    We have studied the transport properties of novel lateral surface superlattice electron wave interference devices in which multiatomic steps are utilized to introduce periodic potentials into two dimensional electron systems. The device structure was fabricated by metalorganic vapor phase epitaxy (MOVPE) on vicinal GaAs surfaces, and spontaneously formed multiatomic steps were periodically embedded at the heterojunction of n-AlGaAs/GaAs. Oscillations of the transconductance as a function of gate voltage were found in three different devices. Our simple analysis suggests that the oscillations found in two devices result from the periodic potentials induced by the multiatomic steps and coherent electron wave interference, whereas those in the other one arise from random interference. Our results imply the effect of height and randomness in the periodic potential on the characteristics of electron wave interference devices.
  • S Hara, J Motohisa, T Fukui
    JOURNAL OF CRYSTAL GROWTH 170 1-4 579 - 584 1997年01月 [査読有り][通常論文]
     
    We investigate the formation of self-organized InGaAs quantum wires (QWRs) on coherent GaAs multiatomic steps grown on vicinal GaAs substrates. In our previous study, GaAs QWRs were formed at the edge of AlAs multiatomic steps grown by metalorganic vapor phase epitaxy (MOVPE). We also found that coherent multiatomic steps formed on GaAs tend to be disturbed during AlAs growth. In the present investigation, we clarify that a thin InGaAs layer with less than 0.15 In content grows in step flow growth mode from the edge of GaAs multiatomic steps, while that with more than 0.2 In content grows in three-dimensional nucleation and growth mode at the edge of multiatomic steps due to the strain effect. Next, we fabricate InGaAs/GaAs strained QWRs at the edge of coherent GaAs multiatomic steps. Locally thick InGaAs QWR structures are observed by a transmission electron microscope. Photoluminescence (PL) measurements reveal that the PL spectra of InGaAs QWR samples show lower energy shift (red-shift) by about 30 meV compared to those of quantum well ones due to the formation of InGaAs QWRs at the edge of coherent GaAs multiatomic steps.
  • K Ohkuri, J Ishizaki, S Hara, T Fukui
    JOURNAL OF CRYSTAL GROWTH 160 3-4 235 - 240 1996年03月 [査読有り][通常論文]
     
    We observed the surface morphology of vicinal GaAs(001) after thermal treatment in AsH3/H-2 atmosphere by atomic force microscopy (AFM). Clear multiatomic steps were formed under the high temperature thermal treatment. Next, we investigated the mechanism of step bunching during thermal treatment by two experiments from the view point of Ga atom evaporation. One is the selective thermal treatment using a partially masked GaAs wafer, and the evaporation amount of Ga atoms was estimated by AFM. The other is the investigation of photoluminescence (PL) peak energy shifts for AlGaAs/GaAs single quantum wells with a thermal treatment process at the top of the GaAs quantum well layer, compared to those without thermal treatment. These results indicate that the evaporation hardly occurs during the thermal treatment process. Therefore, step bunching phenomena on GaAs(001) vicinal surfaces during thermal treatment are probably caused by migration of the atoms detached from upside steps and their re-incorporation to downside steps.
  • T Fukui, S Hara, J Ishizaki, K Ohkuri, J Motohisa
    COMPOUND SEMICONDUCTORS 1995 145 919 - 924 1996年 [査読有り][通常論文]
     
    Coherent multiatomic steps on vicinal (001) GaAs surfaces during metalorganic vapor phase epitaxial (MOVPE) growth are investigated by atomic force microscopy (AFM). AFM images show coherent multiatomic steps with extremely straight edges over a several micron scale. The average spacing of multiatomic steps depends on growth temperature, growth rate and AsH3 partial pressure. Similar multiatomic steps also appear on GaAs substrate surfaces after thermal treatment under AsH3/H-2 atmosphere at temperatures higher than 700 degrees C. Furthermore, we fabricate GaAs quantum well wires (QWWs) on these coherent multiatomic steps. Locally thick GaAs, that is, QWWs are formed at corners of multiatomic steps. Photoluminescence spectra of QWWs show energy shift caused by the QWWs formation. These results suggest that self-organized QWWs can be formed uniformly on coherent multiatomic steps.
  • J. Motohisa, M. Akabori, S. Hara, J. Ishizaki, K. Ohkuri, T. Fukui
    Physica B: Condensed Matter 227 1-4 295 - 298 1996年 [査読無し][通常論文]
     
    We propose a new, lateral surface superlattice (LSSL) type of electron interference devices, where the period of LSSL is typically 60 nm, by utilizing multiatomic steps on a vicinal GaAs (001) surface. Conductivity of the device is theoretically studied by taking the effect of randomness in the LSSL into account. We also investigate its drain and transconductance characteristics experimentally at low temperatures, and found clear oscillations in gm - VG characteristics, which were ascribed to the electron interference effect.
  • 多段原子ステップを用いた電子波干渉素子
    赤堀 誠志, 本久 順一, 入沢 知輝, 原 真二郎, 石崎 順也, 福井 孝志
    1996年 電子情報通信学会 技術研究報告, Vol. 96, No. 352, ED96-119, pp. 53-58 96 352 53 - 58 1996年 [査読有り][通常論文]
  • S HARA, J MOTOHISA, T FUKUI, H HASEGAWA
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 34 8B 4401 - 4404 1995年08月 [査読有り][通常論文]
     
    Coherent multiatomic steps with extremely straight edges are naturally formed on vicinal (001) GaAs surfaces during metalorganic vapor phase epitaxial growth. GaAs quantum well wires (QWWs) are formed on these self-organized multiatomic steps. In our previous study, a thin AlGaAs layer was grown on GaAs with multiatomic steps as a lower barrier of QWWs. However, the height and spacing of the steps slightly fluctuate on AlGaAs layer surfaces. Therefore, in this experiment, AlAs layer instead of AlGaAs layer was used as a lower barrier layer to improve the uniformity of the height and spacing of the steps. Atomic force microscopy observations and photoluminescence (PL) measurements at 20 K revealed that the underlying coherent GaAs multiatomic steps were well traced by the AlAs barrier layer rather than the AlGaAs barrier layer. Furthermore, we measured the polarization anisotropy of the PL spectra from the QWWs with AlAs. These results suggest that uniform QWWs are successfully formed using multiatomic steps on vicinal (001) GaAs surfaces.
  • S HARA, J ISHIZAKI, J MOTOHISA, T FUKUI, H HASEGAWA
    JOURNAL OF CRYSTAL GROWTH 145 1-4 692 - 697 1994年12月 [査読有り][通常論文]
     
    GaAs/AlGaAs quantum well wires (QWWs) were successfully fabricated using multiatomic steps on GaAs vicinal substrates by metalorganic vapor phase epitaxy (MWE). Coherent multiatomic steps with extremely straight step edges were observed on GaAs and AlGaAs epitadally grown layers on vicinal substrates over a wide observation area by atomic force microscopy (AFM). Formation of QWW structures is due to the fact that the GaAs growth rate on AlGaAs with multiatomic steps is much larger at the corners of steps than on the terraces. GaAs QWWs at the corners of steps accompanied by quantum wells (QWs) on the terraces were observed in cross-sectional transmission electron microscope (TEM) images. Photoluminescence (PL) of QWWs was measured at 20 K. The PL peak energy of the QWW structures grown on 5.0 degrees-misoriented substrates was 23 meV smaller than that of a reference QW structure on an exactly oriented substrate. Since the total amount of the grown material is basically the same for both structures, this peak energy shift indicates the formation of quantum-wire-like structures at the corners of multiatomic steps. Furthermore, this observed red shift is in good agreement with a simple theoretical estimate of the QWW structures observed by TEM. These results suggest that the present novel fabrication method of QWWs is very promising for the formation of uniform nano-meter size quantum wires without any processing damage.

書籍

  • Fundamental Properties of Semiconductor Nanowires
    Junichi Motohisa and Shinjiro Hara (担当:分担執筆範囲:Nanowire Field-Effect Transistors, Chapter 9, pp. 371-431 (61pp.))
    ISBN: 978-981-15-9049-8 (Print), ISBN: 978-981-15-9050-4 (Online), Springer Nature Singapore Pte Ltd. 2020年11月
  • Novel Compound Semiconductor Nanowires: Materials, Devices, and Applications
    Shinjiro Hara (担当:分担執筆範囲:Ferromagnetic MnAs/III-V Hybrid Nanowires for Spintronics, Part II, Chapter 6, pp. 177-220 (44pp.))
    ISBN: 978-981-4745-76-5 (Hardcover), ISBN: 978-1-315-36440-7 (eBook), Pan Stanford Publishing Pte. Ltd. 2017年09月
  • ナノワイヤ最新技術の基礎と応用展開
    原 真二郎 (担当:分担執筆範囲:第I編第8章 強磁性体/半導体複合ナノワイヤ, pp. 91-102 (12pp.))
    シーエムシー出版, ISBN: 978-4-7813-0760-2 2013年03月
  • Advances in III-V Semiconductor Nanowires and Nanodevices
    Junichi Motohisa, Katsuhiro Tomioka, Bin Hua, Kumar S, K. Varadwaj, Shinjiroh Hara, Kenji Hiruma, Takashi Fukui (担当:分担執筆範囲:III-V Semiconductor Nanowire Light Emitting Diodes and Lasers, Chapter 8, pp. 145-157 (13pp.))
    Bentham eBooks, eISBN: 978-1-60805-052-9, Bentham Science Publishers Ltd. 2011年

講演・口頭発表等

  • “Magnetic Domain Analysis of CoFe Nanolayers Patterned on GaAs (001) Substrates for Spin-Injection to Semiconducting Nanowires”, (Invited Paper)  [招待講演]
    Shinjiro Hara, Masashi Akabori
    the 11th International Conference on Processing and Manufacturing of Advanced Materials (THERMEC 2021), Virtual Conference, June 1-5, 2021, H3-8 2021年06月 口頭発表(招待・特別)
  • “Transport Properties of MnAs/InAs Heterojunction and InAs Nanowires Formed by Selective-Area Growth”, (Invited Paper)  [招待講演]
    Shinjiro Hara, Matthias T. Elm, Peter J. Klar
    the 2019 Material Research Society (MRS) Spring Meeting, Phoenix, Arizona, USA, April 22-26, 2019, EP10.06.02 2019年04月 口頭発表(招待・特別)
  • “Selective-Area Growth and Transport Characterization of Vertical MnAs/InAs Heterojunction Nanowires”, (Invited Paper)  [招待講演]
    Shinjiro Hara, Matthias T. Elm, Peter J. Klar
    the 10th International Conference on Processing and Manufacturing of Advanced Materials (THERMEC 2018), Paris, France, July 8-13, 2018, H5-10 2018年07月 口頭発表(招待・特別)
  • "Vertical Free-Standing Ferromagnetic MnAs/Semiconducting InAs Heterojunction Nanowires", (Invited Paper)  [招待講演]
    Shinjiro Hara
    the 9th International Conference on Processing and Manufacturing of Advanced Materials (THERMEC 2016), Graz, Austria, May 29-June 3, 2016, H1-5 2016年05月 口頭発表(招待・特別)
  • ”Axial Heterojunctions in Free-Standing Ferromagnetic MnAs/Semiconducting InAs Nanowires”, (Invited Lecture)  [招待講演]
    Shinjiro Hara
    the 8th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials/the 9th International Conference on Plasma-Nano Technology and Science (ISPlasma/IC-PLANTS 2016), Nagoya, Japan, March 6-10, 2016, 08aD06I 2016年03月 口頭発表(招待・特別)
  • “Fabrication and Characterization of MnAs/InAs Hybrid Nanowires Grown by Selective-Area Metal-Organic Vapor Phase Epitaxy”, (Invited Paper)  [招待講演]
    Matthias T. Elm, Shinjiro Hara, Peter J. Klar
    the 2015 International Chemical Congress of Pacific Basin Societies (PACIFICHEM 2015), Honolulu, Hawaii, USA, December 15-20, 2015.08.051-1A-952 2015年12月 口頭発表(招待・特別)
  • “Formation of Vertical MnAs/InAs Heterojunction Nanowires”, (Invited Paper)  [招待講演]
    Shinjiroh Hara, Hiromu Fujimagari, Shinya Sakita
    the Nano Science + Engineering Conferences, the SPIE Optics + Photonics Conferences 2014, San Diego, California, USA, August 17-21, 2014, 9174-1 2014年08月 口頭発表(招待・特別)
  • “Formation of Vertical MnAs/InAs Heterojunction Nanowires for Nanoelectronic Applications”  [招待講演]
    Shinjiro Hara
    Physics Colloquium (Physikalisches Kolloquium), Institute of Physics I, Justus-Liebig University of Giessen, Giessen, Germany, August 26, 2014 2014年08月 公開講演,セミナー,チュートリアル,講習,講義等
  • “Bottom-Up Formation of Vertical Free-Standing Semiconductor Nanowires Hybridized with Ferromagnetic Nanoclusters”, (Invited Paper)  [招待講演]
    Shinjiroh Hara
    the 8th International Conference on Processing and Manufacturing of Advanced Materials (THERMEC 2013), Las Vegas, Nevada, USA, December 2-6, 2013, L1-4. 2013年12月 口頭発表(招待・特別)
  • “Difference in Formation of Ferromagnetic MnAs Nanoclusters on III-V Semiconducting Nanowire Templates”, (Invited Paper)  [招待講演]
    Shinjiroh Hara, Hiromu Fujimagari, Shinya Sakita, Masatoshi Yatago
    the Nano Science + Engineering Conferences, the SPIE Optics + Photonics Conferences 2013, San Diego, California, USA, August 25-29, 2013, 8820-30. 2013年08月 口頭発表(招待・特別)
  • “Selective-Area Metal-Organic Vapor Phase Epitaxy of Ferromagnetic MnAs Nanoclusters and MnAs/GaAs Hybrid Nanowires”, (Invited Paper)  [招待講演]
    Shinjiroh Hara
    the 2012 Collaborative Conference on Crystal Growth (3CG 2012), Orlando, Florida, USA, December 11-14, 2012, A20. 2012年12月 口頭発表(招待・特別)
  • “Hybrid Structure of Semiconducting Nanowires and Ferromagnetic Nanoclusters Grown by Selctive-Area Metal-Organic Vapor-Phase Epitaxy”, (Invited Paper)  [招待講演]
    Shinjiroh Hara, Masatoshi Yatago
    the 2012 Material Research Society (MRS) Spring Meeting, San Francisco, California, USA, April 9-13, 2012, AA2.6. 2012年04月 口頭発表(招待・特別)
  • “III-V Semiconductor Nanowire Transistors and Light Emitting Deveices”, (Invited Paper)  [招待講演]
    Junichi Motohisa, Katsuhiro Tomioka, Shinjiroh Hara, Kenji Hiruma, Takashi Fukui
    the 2011 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2011), Daejeon, Korea, June 29-July 1, 2011. 2011年06月 口頭発表(招待・特別)
  • “III-V Semiconductor Nanowires on Si: Selective-Area MOVPE and Their Device Applications”, (Invited Paper)  [招待講演]
    Katsuhiro Tomioka, Junichi Motohisa, Shinjiroh Hara, Kenji Hiruma, Takashi Fukui
    the 2011 Material Research Society (MRS) Spring Meeting, San Francisco, California, USA, April 25-29, 2011, EE5.6. 2011年04月 口頭発表(招待・特別)
  • “GaAs and Related III-V Nanowires Formed by Using Selective-Area Metal-Organic Vapor Phase Epitaxy and Their Applications to Optoelectronics”, (Invited Paper)  [招待講演]
    Kenji Hiruma, Shota Fujisawa, Keitaro Ikejiri, Katsuhiro Tomioka, Shinjiroh Hara, Junichi Motohisa, Takashi Fukui
    the 473rd Wilhelm and Else Heraeus Seminar on III-V Nanowires – Growth, Propeties and Applications, Bad Honnef, Germany, February 21-23, 2011. 2011年02月 口頭発表(招待・特別)
  • “Fabrication of III-V Semiconductor Core-Shell Nanowires by SA-MOVPE and Their Device Applications”, (Invited Paper)  [招待講演]
    Takashi Fukui, Katsuhiro Tomioka, Shinjiroh Hara, Kenji Hiruma, Junichi Motohisa
    the 2010 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010), Canberra, Aurtralia, December 12-15, 2010. 2010年12月 口頭発表(招待・特別)
  • “Semiconductor Nanowires: Growth, Physics and Device Applications”, (Invited Paper)  [招待講演]
    Junichi Motohisa, Katsuhiro Tomioka, Shinjiroh Hara, Kenji Hiruma, Takashi Fukui
    the 11th Asia Pacific Physics Conference (APPC 11), Shanghai, China, November 14-18, 2010. 2010年11月 口頭発表(招待・特別)
  • “III-V Semiconductor Nanowire Formation Using Catalyst Free MOVPE and Applications to Optoelectrnics Devices”, (Invited Paper)  [招待講演]
    Kenji Hiruma, Katsuhiro Tomioka, Shinjiroh Hara, Junichi Motohisa, Takashi Fukui
    the 12th Nanowire Research Society Meeting & Nano Korea 2010 Satellite Session, “Integrated Nanowire Systems”, Goyang, Gyeonggi-Do, Korea, August 20, 2010, p. 9. 2010年08月 口頭発表(招待・特別)
  • “Growth Mechanism of III-V Semiconductor Nanowires in Selective-Area Metal-Organic Vapor Phase Epitaxy”, (Invited Paper)  [招待講演]
    Junichi Motohisa, Katsuhiro Tomioka, Shinjiroh Hara, Kenji Hiruma, Takashi Fukui
    the 16th International Conference on Crystal Growth (ICCG-16), Beijing, China, August 8-13, 2010. 2010年08月 口頭発表(招待・特別)
  • “Fabrication of GaAs/AlGaAs Core-Multishell Nanowire-Based Light-Emitting-Diode Array on Si Substrate”, (Invited Paper)  [招待講演]
    Katsuhiro Tomioka, Junichi Motohisa, Shinjiroh Hara, Kenji Hiruma, Takashi Fukui
    the Optical Engineering + Applications Conferences, the SPIE Optics + Photonics Conferences 2010, San Diego, California, USA, August 1-5, 2010, 7808-7. 2010年08月 口頭発表(招待・特別)
  • “III-V Semiconductor Nanowires and Core-Shell Nanowires and Their Device Applications”, (Invited Paper)  [招待講演]
    Takashi Fukui, Katsuhiro Tomioka, Shinjiroh Hara, Kenji Hiruma, Junichi Motohisa
    the 16th International Conference on Superlattices, Nanostructures and Nanodevices (ICSNN-2010), Beijing, China, July 18-23, 2010. 2010年07月 口頭発表(招待・特別)
  • “Fabrication of III-V Semiconductor Nanowires by SA-MOVPE and Thier Applications to Photonic and Photovoltaic Devices”, (Invited Paper)  [招待講演]
    Takashi Fukui, Katsuhiro Tomioka, Shinjiroh Hara, Kenji Hiruma, Junichi Motohisa
    the 22nd International Conference on Indium Phosphide and Related Materials (IPRM 2010), Kagawa, Japan, May 31-June 4, 2010, IEEE Catalog Number: CFP10IIP-PRT (3pp.). 2010年05月 口頭発表(招待・特別)
  • “III-V Semiconductor Nanowires from Crystal Growth to Device Applications”, (Invited Paper)  [招待講演]
    Takashi Fukui, Katsuhiro Tomioka, Shinjiroh Hara, Kenji Hiruma, Junichi Motohisa
    the 15th International Conference on Metal-Organic Vapor Phase Epitaxy (ICMOVPE-XV), Incline Village, Nevada, USA, May 23-28, 2010, p. 17. 2010年05月 口頭発表(招待・特別)
  • MOVPE選択成長を用いたIII-V族半導体ナノワイヤの形成と応用  [招待講演]
    本久 順一, 福井 孝志, 原 真二郎, 比留間 健之, 冨岡 克広
    第132回応用物理学会結晶工学分科会研究会, 東京, 2010年4月23日 2010年04月 口頭発表(招待・特別)
  • “III-V Semiconductor Core-Shell Nanowires Grown by Selective-Area MOVPE and Their Device Applications”, (Invited Paper)  [招待講演]
    Takashi Fukui, Katsuhiro Tomioka, Shinjiroh Hara, Kenji Hiruma, Junichi Motohisa
    the 2010 Material Research Society (MRS) Spring Meeting, San Francisco, California, USA, April 5-9, 2010, P2.3. 2010年04月 口頭発表(招待・特別)
  • 化合物半導体ナノワイヤの形成とデバイス応用  [招待講演]
    福井 孝志, 冨岡 克広, 原 真二郎, 比留間 健之, 本久 順一
    第14回関西大学先端科学技術シンポジウム, 吹田, 2010年1月28日-29日 2010年01月 口頭発表(招待・特別)
  • “Lasing in GaAs-Based Nanowires Grown by Selective-Area MOVPE”, (Invited Paper)  [招待講演]
    Junichi Motohisa, Bin Hua, Kumar Sidhartha, Kesav Varadwaj, Shinjiroh Hara, Kenji Hiruma, Takashi Fukui
    the IEEE Photonics Society Winter Topicals 2010 (WIN 2010), Majorca, Spain, January 11-13, 2010. 2010年01月 口頭発表(招待・特別)
  • “Catalyst-Free and Position-Controlled Formation of III-V Semiconductor Nanowires for Optical Device Applications”, (Invited Paper)  [招待講演]
    Shinjiroh Hara, Junichi Motohisa, Katsuhiro Tomioka, Kenji Hiruma, Takashi Fukui
    the OPTO Symposia, the SPIE Photonics West Conferences 2010, San Francisco, California, USA, January 23-28, 2010, 7608-25. 2010年01月 口頭発表(招待・特別)
  • “Growth of Nanowires by Selective-Area Metal-Organic Vapor Phase Epitaxy and Their Applications”, (Invited Paper)  [招待講演]
    Junichi Motohisa, Shinjiroh Hara, Kenji Hiruma, Takashi Fukui
    the XVth International Workshop on the Physics of Semiconductor Devices (IWPSD 2009), New Delhi, India, December 15-19, 2009. 2009年12月 口頭発表(招待・特別)
  • “III-V Semiconductor Nanowires: From Growth to Device Applications”, (Invited Paper)  [招待講演]
    Takashi Fukui, Katsuhiro Tomioka, Shinjiroh Hara, Kenji Hiruma, Junichi Motohisa
    the 22nd International Microprocesses and Nanotechnology Conference (MNC 2009), Sapporo, Japan, November 16-19, 2009, p. 6. 2009年11月 口頭発表(招待・特別)
  • “Selective-Area Growth of Self-Assembled Ferromagnetic MnAs Nanoclusters and Cluster Chains for Novel Planar Magnetoelectronic Devices”, (Invited Paper)  [招待講演]
    Matthias T. Elm, Shingo Ito, Jan Stehr, Hans-Albrecht Krug von Nidda, Detlev M. Hofmann, Shinjiroh Hara, Peter J. Klar
    the 2009 International Conference on Nanomaterials and Nanosystems (NanoMats 2009), Istanbul, Turkey, August 10-13, 2009. 2009年08月 口頭発表(招待・特別)
  • “III-V Semiconductor Nanowires Grown and Their Device Applications”, (Invited Paper)  [招待講演]
    Takashi Fukui, Katsuhiro Tomioka, Shinjiroh Hara, Kenji Hiruma, Junichi Motohisa
    the 13th European Workshop on Metal-Organic Vapour Phase Epitaxy (EWMOVPE-XIII), Ulm, Germany, June 7-10, 2009, pp. 3-7. 2009年06月 口頭発表(招待・特別)
  • “Position Controlled Growth of III-V Semiconductor Core-Shell Nanowires Grown by Selective-Area MOVPE and Their Device Applications”, (Invited Paper)  [招待講演]
    Takashi Fukui, Katsuhiro Tomioka, Shinjiroh Hara, Kenji Hiruma, Junichi Motohisa
    the 2009 Material Research Society (MRS) Spring Meeting, San Francisco, California, USA, April 13-17, 2009, AA1.2. 2009年04月 口頭発表(招待・特別)
  • “Position Controlled Growth and Optical Properties of III-V Semiconductor Core-Shell Nanowires Grown by Selective-Area MOVPE and Their Device Applications”, (Invited Paper)  [招待講演]
    Junichi Motohisa, Katsuhiro Tomioka, Shinjiroh Hara, Kenji Hiruma, Takashi Fukui
    the OPTO Symposia, the SPIE Photonics West Conferences 2009, San Jose, California, USA, January 24-29, 2009, 7224-17. 2009年01月 口頭発表(招待・特別)
  • 有機金属気相選択成長法による半導体ナノワイヤの成長とその成長機構  [招待講演]
    比留間 健之, 原 真二郎, 本久 順一, 福井 孝志
    化学工学会 第40回秋季大会 (SCEJ), 仙台, 2008年9月24日-26日 2008年09月 口頭発表(招待・特別)
  • 化合物半導体ナノワイヤとデバイス応用  [招待講演]
    本久 順一, 原 真二郎, 比留間 健之, 福井 孝志
    日本真空協会 スパッタリングおよびプラズマプロセス技術部会 第109回定例会, 東京, 2008年7月24日, pp. 29-37 2008年07月 口頭発表(招待・特別)
  • “III-V Semiconductor Epitaxial Nanowires and Their Applications”, (Invited Paper)  [招待講演]
    Takashi Fukui, Shinjiroh Hara, Kenji Hiruma, Junichi Motohisa
    the 16th Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2008), Sapporo, Japan, July 9-11, 2008. 2008年07月 口頭発表(招待・特別)
  • “Growth of III-V Semiconductor Nanowires”, (Invited Paper)  [招待講演]
    Takashi Fukui, Shinjiroh Hara, Junichi Motohisa
    the 29th International Conference on the Physics of Semiconductors (ICPS 2008), Rio de Janeiro, Brazil, July 27-August 1, 2008. 2008年07月 口頭発表(招待・特別)
  • “Epitaxial III-V Semiconductors: Nanowires and Nanotubes”, (Invited Paper)  [招待講演]
    Takashi Fukui, Shinjiroh Hara, Junichi Motohisa
    the 4th Asian Conference on Crystal Growth and Crystal Technology (CGCT-4), Sendai, Japan, May 21-24, 2008. 2008年05月 口頭発表(招待・特別)
  • “Growth and Optical Properties of InP/InAs Multi-Core Shell Nanowires Grown by Selective-Area MOVPE”, (Invited Paper)  [招待講演]
    Takashi Fukui, Shinjiroh Hara, Junichi Motohisa
    the 2008 Material Research Society (MRS) Spring Meeting, San Francisco, California, USA, March 24-28, 2008. 2008年03月 口頭発表(招待・特別)
  • “Epitaxial III-V Semiconductors: Nanowires and Nanotubes”, (Invited Paper)  [招待講演]
    Takashi Fukui, Shinjiroh Hara, Junichi Motohisa
    the 8th Japan-Sweden QNANO Workshop, Lund, Sweden, December 13-14, 2007. 2007年12月 口頭発表(招待・特別)
  • “III-V Semiconductor Nanowires and Their Device Applications”, (Invited Paper)  [招待講演]
    Shinjiroh Hara, Junichi Motohisa, Takashi Fukui
    the 2007 International Symposium on Advanced Silicon-Based Nano-Devices (ISASN 2007), Tokyo, Japan, November 9, 2007. 2007年11月 口頭発表(招待・特別)
  • “InP/InAs Core-Shell Nanowires Grown by Selective-Area MOVPE”, (Invited Paper)  [招待講演]
    Takashi Fukui, Shinjiroh Hara, Junichi Motohisa
    the 397th Wilhelm and Else Heraeus Seminar on Semiconducting Nanowires: Physics, Materials and Devices, Bad Honnef, Germany, October 14-17, 2007. 2007年10月 口頭発表(招待・特別)
  • “InP/InAs Core-Multishell Heterostructure Nanowires Grown by Metal-Organic Vapor Phase Epitaxy”, (Invited Paper)  [招待講演]
    Junichi Motohisa, Shinjiroh Hara, Takashi Fukui
    the 2007 Virtual Conference on Nanoscale Science and Technology (VC-NST 2007), Fayetteville, Arkansas, USA, October 21-25, 2007. 2007年10月 口頭発表(招待・特別)
  • “III-V Semiconductor Hetero-Structure Nanowires by Selective-Area MOVPE”, (Invited Paper)  [招待講演]
    Takashi Fukui, Shinjiroh Hara, Junichi Motohisa
    the 2007 International Conference on Solid State Devices and Materials (SSDM 2007), Tsukuba, Japan, September 18-21, 2007. 2007年09月 口頭発表(招待・特別)
  • “Epitaxial III-V Semiconductors: Nanowires and Nanotubes”, (Invited Paper)  [招待講演]
    Takashi Fukui, Shinjiroh Hara, Junichi Motohisa
    the 3rd Handai Nanoscience and Nanotechnology International Symposium, Osaka, Japan, September 26-29, 2007. 2007年09月 口頭発表(招待・特別)
  • “Growth Characteristics of III-V Semiconductor Nanowires”, (Invited Paper)  [招待講演]
    Kenji Hiruma, Shinjiroh Hara, Junichi Motohisa, Takashi Fukui
    the 2nd International Conference on One-Dimensional Nanomaterials (ICON 2007), Malmö, Sweden, September 26-29, 2007. 2007年09月 口頭発表(招待・特別)
  • “III-V Semiconductor Nanowires and Nanotubes Grown by Selective-Area Metal-Organic Vapor Phase Epitaxy”, (Invited Paper)  [招待講演]
    Junichi Motohisa, Takashi Fukui, Shinjiroh Hara
    the 2007 International Conference on Nanoscience and Technology (ICN+T 2007), Stockholm, Sweden, July 2-6, 2007. 2007年07月 口頭発表(招待・特別)
  • “III-V Compound Semiconductor Nanowires Grown by Selective-Area MOVPE”, (Invited Paper)  [招待講演]
    Takashi Fukui, Shinjiroh Hara, Junichi Motohisa
    the 2nd International Lund Workshop on Nanowire Growth Mechanisms (Wire Growth 2007), Lund, Sweden, June 10-11, 2007. 2007年06月 口頭発表(招待・特別)
  • “III-V Semiconductor Nanowires and Nanotubes Grown by Selective-Area Metal-Organic Vapor Phase Epitaxy”, (Invited Paper)  [招待講演]
    Shinjiroh Hara, Junichi Motohisa, Takashi Fukui
    the 20th AACGE-western section Conference on Crystal Growth and Epitaxy, the Stanford Sierra Camp at Fallen Leaf Lake, California, USA, June 4-7, 2006. 2006年06月 口頭発表(招待・特別)
  • “Photoluminescence from Single Hexagonal Nano-Wire with GaInAs/GaAs Double Hetero-Structures Grown by Selective Area MOVPE”, (Invited Paper)  [招待講演]
    Shinjiroh Hara, Junichi Motohisa, Junichiro Takeda, Jinichiro Noborisaka, Takashi Fukui
    the 31st International Symposium on Compound Semiconductors (ISCS 2004), Seoul, Korea, September, 12-16, 2004. 2004年09月 口頭発表(招待・特別)
  • アレイ集積型波長可変レーザ  [招待講演]
    バウダ マルティン, 竹内 辰也, 松田 学, 原 真二郎, 森戸 健, 倉又 朗人, 小滝 裕二
    2001年 電子情報通信学会 総合大会, C-3-84, 草津, 2001年3月26日-29日 2001年03月 口頭発表(招待・特別)
  • “Application of Self-Organized Multiatomic Steps on Vicinal GaAs Surfaces for Quantum Structures and Devices”, (Invited Paper)  [招待講演]
    Junichi Motohisa, Shinjiroh Hara, Masashi Akabori, Tomoki Irisawa, Takashi Fukui
    the Japan-China Symposium on Thin Films, Tokyo, Japan, October 16-17, 1997. 1997年10月 口頭発表(招待・特別)
  • 半導体ナノ構造の自然形成  [招待講演]
    福井 孝志, 石崎 順也, 原 真二郎, 熊倉 一英, 本久 順一
    第28回結晶成長国内会議 (NCCG-28), SK1, 札幌, 1997年7月22日-24日 1997年07月 口頭発表(招待・特別)
  • “Self-Organization Techniques for Quantum Nanostructures”, (Invited Paper)  [招待講演]
    Takashi Fukui, Shinjiroh Hara, Kazuhide Kumakura, Junichi Motohisa
    the 1997 International Microprocesses and Nanotechnology Conference (MNC ’97), Nagoya, Japan, July 7-10, 1997. 1997年07月 口頭発表(招待・特別)
  • GaAs多段原子ステップの形成とナノ構造への応用  [招待講演]
    福井 孝志, 石崎 順也, 原 真二郎
    第44回応用物理学会関係連合講演会, 「半導体表面における原子ステップの挙動と制御」シンポジウム, 船橋, 1997年3月28日-31日 1997年03月 口頭発表(招待・特別)
  • 微傾斜基板上のナノ構造作製  [招待講演]
    福井 孝志, 原 真二郎, 赤堀 誠志, 本久 順一
    理研シンポジウム, 第6回「極限微小構造の物理と制御」, 東京, 1997年 1997年 口頭発表(招待・特別)
  • “Fabrication of High Density GaAs/AlGaAs Quantum Wire and Quantum Dot Structures by MOVPE”, (Invited Paper)  [招待講演]
    Takashi Fukui, Jun-ya Ishizaki, Shinjiroh Hara, Kazuhide Kumakura, Yasuhiro Oda, Junichi Motohisa
    the 1996 International Symposium on Formation, Physics and Device Application of Quantum Dot Structures (QDS ’96), Sapporo, Japan, November 4-7, 1996. 1996年11月 口頭発表(招待・特別)
  • “Investigation and Application of Multiatomic Steps on (001) GaAs Vicinal Surfaces Grown by Metalorganic Chemical Vapor Deposition”, (Invited Paper)  [招待講演]
    Takashi Fukui, Jun-ya Ishizaki, Kazunobu Ohkuri, Shinjiroh Hara, Junichi Motohisa
    the 4th China-Japan Symposium on Thin Films (CJSTF-4), Jiande Zhejiang, China, October 24-28, 1995. 1995年10月 口頭発表(招待・特別)
  • “Coherent Multiatomic Step Formation on GaAs (001) Vicinal Surfaces by MOVPE and Its Application to Quantum Well Wires”, (Invited Paper)  [招待講演]
    Takashi Fukui, Shinjiroh Hara, Jun-ya Ishizaki, Kazunobu Ohkuri, Junichi Motohisa
    the 22nd International Symposium on Compound Semiconductors (ISCS-22), Cheju Island, Korea, August 28-September 2, 1995. 1995年08月 口頭発表(招待・特別)

その他活動・業績

  • Dependence of Ge Nanowire Height Selectively-Grown by Vapor-Liquid-Solid on Au Catalyst Diameter Periodically-Located on Si (111) Surface
    D. Goto, M. Makino, R. Horiguchi, W. Jevasuwan, N. Fukata, S. Hara Collected Abstract of the 9th International Symposium on Surface Science (ISSS-9), Online, Japan, November 28-December 1, 2021, 01PS-39 355 -355 2021年12月 [査読有り][通常論文]
  • Selective-Area Growth of Ge Nanowires on SiO2-Masked Si (111) Substrates by Vapor-Liquid-Solid Method
    D. Goto, M. Makino, R. Horiguchi, W. Jevasuwan, N. Fukata, S. Hara Collected Abstract of the 34th International Microprocesses and Nanotechnology Conference (MNC 2021), Online and On-Demand Conference, Japan, October 26-29, 2021, P22-1 1 -2 2021年10月 [査読有り][通常論文]
  • Polarization Analysis of Luminescence from GaAs/InGaAs/GaAs Core-Multishell Nanowire Cavity
    T. Kunimoto, S. Obara, S. Hara, J. Motohisa Collected Abstract of the 2021 International Conference on Solid State Devices and Materials (SSDM 2021), All-Virtual Conference, September 6-9, 2021, H-4-06 1 -2 2021年09月 [査読有り]
  • Thickness-Dependent Magnetization Switching in Patterned CoFe Nanolayers on GaAs (001) Substrates
    W. Dai, K. Teramoto, R. Horiguchi, W. Kanetsuka, M. Akabori, S. Hara Collected Abstract of the 33rd International Microprocesses and Nanotechnology Conference (MNC 2020), Web Conference, November 9-12, 2020, 2020-22-10. 1 -2 2020年11月 [査読有り][通常論文]
  • Magnetic Domain Structures Controlled by Patterned CoFe Nanolayer Thickness on GaAs (001) Substrates
    W. Dai, K. Teramoto, R. Horiguchi, W. Kanetsuka, M. Akabori, S. Hara Collected Abstract of the 2020 International Conference on Solid State Devices and Materials (SSDM 2020), All-Virtual Conference, September 27-30, 2020, H-4-05. 1 -2 2020年09月 [査読有り][通常論文]
  • Aspect Ratio Dependence of Magnetization Switching in CoFe Nanolayers Patterned on GaAs (001) Substrates
    R. Horiguchi, K. Teramoto, Y. Adachi, M. Akabori, S. Hara Collected Abstract of the 8th International Symposium on Control of Semiconductor Interfaces (ISCSI-VIII), Sendai, Japan, November 27-30, 2019, WP2-20. 53 -54 2019年11月 [査読有り][通常論文]
  • Applied External Magnetic Field Dependence of Magnetic Domain Structures in Patterned CoFe Thin Films on GaAs (001) Substrates
    K. Teramoto, R. Horiguchi, Y. Adachi, M. Akabori, S. Hara Collected Abstract of the 32nd International Microprocesses and Nanotechnology Conference (MNC 2019), Hiroshima, Japan, October 28-31, 2019, 31C-8-1. 1 -2 2019年10月 [査読有り][通常論文]
  • Anomalous Angle-Dependent Magnetoresistance in InAs Nanowires
    P. Uredat, R. Horiguchi, R. Kodaira, S. Hara, P. J. Klar, M. T. Elm Collected Abstract of the Nanowire Week 2019, Pisa, Italy, September 23-27, 2019, Tu4.4. 55 -55 2019年09月 [査読有り][通常論文]
  • Thickness and Aspect Ratio Dependences of Magnetic Domain Structures in Patterned CoFe Thin Films on GaAs (001) Substrates
    K. Teramoto, R. Horiguchi, Y. Adachi, M. Akabori, S. Hara Collected Abstract of the 2019 International Conference on Solid State Devices and Materials (SSDM 2019), Nagoya, Japan, September 2-5, 2019, PS-8-20. 1 -2 2019年09月 [査読有り][通常論文]
  • Magnetic Domain Structures Depending on Applied Magnetic Fields in MnAs Nanodisks Selectively-Grown on Si (111) Substrates
    K. Suzuki, R. Horiguchi, M. Iida, S. Hara Collected Abstract of the 31st International Microprocesses and Nanotechnology Conference (MNC 2018), Sapporo, Japan, November 13-16, 2018, 16P-11-116L. 1 -2 2018年11月 [査読有り][通常論文]
  • Structural Investigation of Bended MnAs/InAs Heterojunction Nanowires
    T. Kadowaki, R. Kodaira, S. Hara Collected Abstract of the 31st International Microprocesses and Nanotechnology Conference (MNC 2018), Sapporo, Japan, November 13-16, 2018, 16P-11-115L. 1 -2 2018年11月 [査読有り][通常論文]
  • Dependence of Si Nanowire Orientation on Vapor-Liquid-Solid Growth Conditions
    Y. Kitazawa, R. Kodaira, R. Horiguchi, W. Jevasuwan, N. Fukata, S. Hara Collected Abstract of the 31st International Microprocesses and Nanotechnology Conference (MNC 2018), Sapporo, Japan, November 13-16, 2018, 16P-11-111L. 1 -2 2018年11月 [査読有り][通常論文]
  • Determing the Carrier Mobility in Single InAs Nanowires from Magnetotransport Measurements
    P. Uredat, R. Kodaira, R. Horiguchi, S. Hara, P. J. Klar, M. T. Elm Collected Abstract of the 2018 International Conference on Solid State Devices and Materials (SSDM 2018), Tokyo, Japan, September 9-13, 2018, M-6-02. 1 -2 2018年09月 [査読有り][通常論文]
  • Magnetization Characterization of Two MnAs Nanoclusters at Close Range in MnAs/InAs Heterojunction Nanowires
    R. Kodaira, R. Horiguchi, S. Hara Collected Abstract of the 19th International Conference on Metal-Organic Vapor Phase Epitaxy (ICMOVPE-XIX), Nara, Japan, June 3-8, 2018, 7C-3.6. 1 -1 2018年06月 [査読有り][通常論文]
  • Analyses of Magnetic Domains in MnAs Nanoclusters Grown by Selective-Area MOVPE
    R. Horiguchi, M. Iida, K. Morita, S. Hara Collected Abstract of the 19th International Conference on Metal-Organic Vapor Phase Epitaxy (ICMOVPE-XIX), Nara, Japan, June 3-8, 2018, 5B-3.6. 1 -1 2018年06月 [査読有り][通常論文]
  • Construction of In-House Papers/Figures Database System using PDFs
    M. Yoshioka, S. Hara Collected Abstract of the 12th International Workshop on Information Search, Integration, and Personalization (ISIP 2018), Fukuoka, Japan, May 14-15, 2018. 1 -1 2018年05月 [査読有り][通常論文]
  • Size-Dependent Magnetic Domain Structure in MnAs Nanoclusters Selectively Grown on Si (111) Substrates Covered with Different Dielectric Mask Designs
    R. Horiguchi, M. Iida, K. Morita, S. Hara Collected Abstract of the 2017 Material Research Society (MRS) Fall Meeting, Boston, Massachusetts, USA, November 26-December 1, 2017, EM08.06.04 1 -1 2017年11月 [査読有り][通常論文]
  • Control of Bending Structures in MnAs/InAs Heterojunction Nanowires
    R. Kodaira, T. Kadowaki, S. Hara Collected Abstract of the 2017 Material Research Society (MRS) Fall Meeting, Boston, Massachusetts, USA, November 26-December 1, 2017, NM03.14.17 1 -1 2017年11月 [査読有り][通常論文]
  • Electrical Ttransport Properties of Single MnAs/InAs Hybrid Nanowires Grown by Selective-Area Metal-Organic Vapor Phase Epitaxy
    P. Uredat, M. T. Elm, R. Kodaira, R. Horiguchi, P. J. Klar, S. Hara Collected Abstract of the 2017 Material Research Society (MRS) Fall Meeting, Boston, Massachusetts, USA, November 26-December 1, 2017, NM03.07.06 1 -1 2017年11月 [査読有り][通常論文]
  • Construction of In-House Papers/Figures Database System for a Paticular Research Domain using PDFs - Application of Nano-Crystal Device Development Domain -
    M. Yoshioka, S. Hara Proccedings of the 2nd International Workshop on Scientific Document Analysis (SCIDOCA 2017), Tokyo, Japan, November 14-15, 2017: Proccedings of the 2nd International Workshop on Scientific Document Analysis (7pp.) 1 -7 2017年11月 [査読有り][通常論文]
  • Analysis of Bending Mechanism in MnAs/InAs Heterojunction Nanowires
    T. Kadowaki, R. Kodaira, S. Hara Collected Abstract of the 2017 International Conference on Solid State Devices and Materials (SSDM 2017), Sendai, Japan, September 19-22, 2017, J-6-02 485 -486 2017年09月 [査読有り][通常論文]
  • Magnetic Domain Characterizations of MnAs Nanoclusters on Si (111) Substrate
    M. Iida, R. Horiguchi, K. Morita, S. Hara Collected Abstract of the 2017 International Conference on Solid State Devices and Materials (SSDM 2017), Sendai, Japan, September 19-22, 2017, PS-8-02 873 -874 2017年09月 [査読有り][通常論文]
  • Photoluminescence of Zn-Doped InP Nanowires: Mixing of Crystal Structures, Donor-Acceptor Pair Recombination, and Surface Effects
    J. Motohisa, H. Kameda, M. Sasaki, S. Hara, K. Tomioka Collected Abstract of the 29th International Conference on Defects in Semiconductors (ICDS 2017), Matsue, Japan, July 31-August 4, 2017, TuP-33 1 -2 2017年08月 [査読有り][通常論文]
  • Structural Characterization and Magnetotransport Properties of MnAs/InAs Hybrid Nanowires Grown by Selective-Area Metal-Organic Vapor Phase Epitaxy
    M. T. Elm, R. Kodaira, R. Horiguchi, K. Kabamoto, P. J. Klar, S. Hara Collected Abstract of the 2016 Material Research Society (MRS) Fall Meeting, Boston, Massachusetts, USA, November 27-December 2, 2016, NM1.2.02 1 -1 2016年11月 [査読有り][通常論文]
  • A Multi-Faceted Figure Retrieval System from Research Papers for Supporting Nano-Crystal Device Development Researchers
    M. Yoshioka, T. Zhu, S. Hara Proceedings of the 1st International Workshop on Scientific Document Analysis (SCIDOCA 2016), Yokohama, Japan, November 15-16, 2016: Proccedings of the 1st International Workshop on Scientific Document Analysis (5pp.) 1 -5 2016年11月 [査読有り][通常論文]
  • Shape Control of Ferromagnetic MnAs Nanoclusters and Their Magnetization in Semiconducting InAs Nanowires
    R. Kodaira, K. Kabamoto, S. Hara Collected Abstract of the 29th International Microprocesses and Nanotechnology Conference (MNC 2016), Kyoto, Japan, November 8-11, 2016, 11B-10-4 1 -2 2016年11月 [査読有り][通常論文]
  • Structural and Magnetic Domain Characterization of Lateral MnAs Nanowires
    R. Horiguchi, H. Kato, K. Kabamoto, R. Kodaira, S. Hara Collected Abstract of the 29th International Microprocesses and Nanotechnology Conference (MNC 2016), Kyoto, Japan, November 8-11, 2016, 11B-10-3 1 -2 2016年11月 [査読有り][通常論文]
  • Single Photon Emission from InAsP Quantum Dots Embedded in Density-Controlled InP Nanowires
    S. Yanase, H. Sasakura, S. Hara, J. Motohisa Collected Abstract of the 2016 International Conference on Solid State Devices and Materials (SSDM 2016), Tsukuba, Japan, September 26-29, 2016, K-5-02 499 -500 2016年09月 [査読有り][通常論文]
  • Growth Time Dependence of Ferromagnetic MnAs Nanoclusters Formation in Semiconducting InAs Nanowires
    R. Kodaira, K. Kabamoto, S. Hara Collected Abstract of the 18th International Conference on Metal-Organic Vapor Phase Epitaxy (ICMOVPE-XVIII), San Diego, California, USA, July 10-15, 2016, 5A-2.3 84 -84 2016年07月 [査読有り][通常論文]
  • Magnetic Domain Structures of MnAs/InAs Heterojunction Nanowires
    K. Kabamoto, R. Kodaira, S. Hara Collected Abstract of the 18th International Conference on Metal-Organic Vapor Phase Epitaxy (ICMOVPE-XVIII), San Diego, California, USA, July 10-15, 2016, 5A-2.4 84 -84 2016年07月 [査読有り][通常論文]
  • Density Control of InP-based Nanowires and Nanowire Quanutm Dots
    S. Yanase, H. Sasakura, S. Hara, J. Motohisa Collected Abstract of the 35th Electronic Materials Symposium (EMS-35), Moriyama, Japan, July 6-8, 2016, Th3-2 1 -2 2016年07月 [査読有り][通常論文]
  • ZHU Tao, DIEB Thaer M, 吉岡真治, 原真二郎 人工知能学会全国大会論文集(CD-ROM) 30th (0) ROMBUNNO.1J2‐4 -1J24 2016年 [査読無し][通常論文]
  • Backscattered Electron and Magnetic Force Microscopy Analyses of MnAs/InAs Heterojunction Nanowires
    K. Kabamoto, R. Kodaira, S. Sakita, S. Hara Collected Abstract of the 28th International Microprocesses and Nanotechnology Conference (MNC 2015), Toyama, Japan, November 10-13, 2015, 12C-6-5 1 -2 2015年11月 [査読有り][通常論文]
  • Structural and Magnetic Characterizations of Vertical Ferromagnetic MnAs/Semiconducting InAs Heterojunction Nanowires
    R. Kodaira, K. Kabamoto, S. Sakita, S. Hara Collected Abstract of the 2015 International Conference on Solid State Devices and Materials (SSDM 2015), Sapporo, Japan, September 27-30, 2015, D-6-3 1 -2 2015年09月 [査読有り][通常論文]
  • Growth and Characterization of Vertical Nanocavity Using Core-Multishell Nanowires
    T. Wada, S. Hara, J. Motohisa Collected Abstract of the 2015 International Conference on Solid State Devices and Materials (SSDM 2015), Sapporo, Japan, September 27-30, 2015, D-4-3 1 -2 2015年09月 [査読有り][通常論文]
  • Photoluminescence Study of Doping-Induced Crystal Structure Transition in Indium Phosphide Nanowires
    H. Kameda, S. Yanase, K. Tomioka, S. Hara, J. Motohisa Collected Abstract of the 17th International Conference on Modulated Semiconductor Structures (MSS-17), Sendai, Japan, July 26-31, 2015, Mo-PM-33 1 -1 2015年07月 [査読有り][通常論文]
  • Automatic Information Extraction of Experiments from Nanocrystal Devices Development Papers
    M. Yoshioka, T. M. Dieb, S. Hara Collected Abstract of the Nanoinformatics Workshop 2015 (Nanoinformatics 2015), Arlington, Virginia, USA, January 26-28, 2015, T3.5 2015年01月 [査読有り][通常論文]
  • Selective-Area Metal-Organic Vapor Phase Epitaxy of Hetero-Junction Nanowires between Ferromagnetic MnAs and Semiconducting InAs
    R. Kodaira, H. Fujimagari, H. Kato, S. Sakita, S. Hara Collected Abstract of the 27th International Microprocesses and Nanotechnology Conference (MNC 2014), Fukuoka, Japan, November 4-7, 2014, 6B-6-3 1 -2 2014年11月 [査読有り][通常論文]
  • Design and Growth of Nanowire Nanocavity
    T. Wada, S. Hara, J. Motohisa Collected Abstract of the 2014 International Conference on Solid State Devices and Materials (SSDM 2014), Tsukuba, Japan, September 8-11, 2014, PS-13-12 1 -2 2014年09月 [査読有り][通常論文]
  • Selective-Area Growth of AlGaAs Nanostructures on Al2O3/Glass Substrate
    S. Sakita, H. Kato, S. Hara Collected Abstract of the 17th International Conference on Metal-Organic Vapor Phase Epitaxy (ICMOVPE-XVII), Lausanne, Switzerland, July 13-18, 2014, Mon-Poster-2-25 1 -1 2014年07月 [査読有り][通常論文]
  • Magnetic Characterization of Lateral MnAs Nanowires Selectively Grown by Metal-Organic Vapor Phase Epitaxy
    H. Kato, S. Sakita, S. Hara Collected Abstract of the 17th International Conference on Metal-Organic Vapor Phase Epitaxy (ICMOVPE-XVII), Lausanne, Switzerland, July 13-18, 2014, Wed-Poster-2-47 1 -2 2014年07月 [査読有り][通常論文]
  • Growth of AlGaAs Nanowires on Planar Al2O3 Layers Deposited on Si (111) and Amorphous Glass Substrates
    S. Sakita, S. Hara Collected Abstract of the 2014 Material Research Society (MRS) Spring Meeting, San Francisco, California, USA, April 21-25, 2014, UU3.18 1 -1 2014年04月 [査読有り][通常論文]
  • Magnetotransport Measurements on Individual MnAs Nanoclusters and Nanocluster Arrangements
    M. Fischer, S. Sakita, H. Kato, M. T. Elm, S. Hara, P. J. Klar Collected Abstract of the 2013 Material Research Society (MRS) Fall Meeting, Boston, Massachusetts, USA, December 1-6, 2013, U5.05 1 -1 2013年12月 [査読有り][通常論文]
  • DIEB Thaer M, YOSHIOKA Masaharu, HARA Shinjiroh 人工知能学会全国大会論文集(CD-ROM) 27th ROMBUNNO.1C3-4 2013年 [査読無し][通常論文]
  • Composition-Dependent Growth Dynamics of InGaAs Nanowires in Selective-Area Metal-Organic Vapor Phase Epitaxy
    Y. Kohashi, S. Hara, J. Motohisa Collected Abstract of the 2013 International Symposium on Advanced Nanodevices and Nanotechnology (ISANN 2013), Poipu Beach, Kauai, Hawaii, USA, December 8-13, 2013, Thu2-5 1 -1 2013年 [査読有り][通常論文]
  • A New Growth Mode of InP Nanowires in Selective-Area Metal-Organic Vapor Phase Epitaxy
    S. Yanase, Y. Kohashi, S. Hara, J. Motohisa Collected Abstract of the 2013 International Symposium on Advanced Nanodevices and Nanotechnology (ISANN 2013), Poipu Beach, Kauai, Hawaii, USA, December 8-13, 2013, PI-18 1 -1 2013年 [査読有り][通常論文]
  • Fabrication and Characterization of Laterl MnAs Nanowires by Selective-Area Metal-Organic Vapor Phase Epitaxy
    H. Kato, S. Sakita, M. Fischer, S. Hara Collected Abstract of the 26th International Microprocesses and Nanotechnology Conference (MNC 2013), Sapporo, Japan, November 5-8, 2013, 7D-4-2 1 -2 2013年 [査読有り][通常論文]
  • Fabrication and Structural Characterization of Vertical Free-Standing InAs Nanowires Hybridized with Ferromagnetic MnAs Nanoclusters
    H. Fujimagari, S. Sakita, S. Hara Collected Abstract of the 2013 International Conference on Solid State Devices and Materials (SSDM 2013), Fukuoka, Japan, September 24-27, 2013, PS-13-6 1 -2 2013年 [査読有り][通常論文]
  • Study on the Lateral Growth on GaAs Nanowires
    T. Wada, Y. Kohashi, S. Hara, J. Motohisa Collected Abstract of the 32nd Electronic Materials Symposium (EMS-32), Moriyama, Japan, July 10-12, 2013, Fr1-12 1 -2 2013年 [査読無し][通常論文]
  • Selective-Area Growth of MnAs Nanoclusters for New Planar Magnetoelectronic Devices
    M. Fischer, S. Sakita, M. T. Elm, P. J. Klar, S. Hara Collected Abstract of the 4th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2013), Kanazawa, Japan, June 17-20, 2013, P1-55, p. 101 101 -101 2013年 [査読有り][通常論文]
  • Influence of V/III Ration on the Growth of InGaAs Nanowires in Selective-Area MOVPE
    Y. Kohashi, S. Hara, J. Motohisa Collected Abstract of the 40th International Sympsium on Compound Semiconductors (ISCS 2013), Kobe, Japan, May 19-23, 2013, WeB2-2 1 -2 2013年 [査読有り][通常論文]
  • 吉岡真治, THAER Moustafa Dieb, 原真二郎 Designシンポジウム講演論文集 2012 87 -91 2012年10月16日 [査読無し][通常論文]
  • Selective-Area Growth of Highly Uniform and Thin InGaAs Nanowires by Two-Step growth Method
    Y. Kohashi, S. Sakita, S. Hara, J. Motohisa Collected Abstract of the 2012 Material Research Society (MRS) Fall Meeting, Boston, Massachusetts, USA, November 25-30, 2012, FF9.01 1 -1 2012年 [査読有り][通常論文]
  • Selective-Area Metal-Organic Vapor-Phase Epitaxy of AlGaAs Nanostructures on Crystallized Insulating Al2O3 Layers
    S. Sakita, M. Yatago, S. Hara Collected Abstract of the 25th International Microprocesses and Nanotechnology Conference (MNC 2012), Kobe, Japan, October 30-November 2, 2012, 31C-2-5 1 -2 2012年 [査読有り][通常論文]
  • Growth and Characterization of AlGaAs Nanowires on Insulating Al2O3 Layers by Selective-Area Metal-Organic Vapor-Phase Epitaxy
    S. Sakita, M. Yatago, S. Hara Collected Abstract of the 2012 International Conference on Solid State Devices and Materials (SSDM 2012), Kyoto, Japan, September 25-27, 2012, C-2-5 1 -2 2012年 [査読有り][通常論文]
  • Control of Diameter and Pitch of InGaAs Nanowire Arrays in Selective-Area Metal-Organic Vapor-Phase Epitaxy
    Y. Kohashi, S. Sakita, S. Hara, J. Motohisa Collected Abstract of the 2012 International Conference on Solid State Devices and Materials (SSDM 2012), Kyoto, Japan, September 25-27, 2012, C-2-3 1 -2 2012年 [査読有り][通常論文]
  • Fabrication of Highly Uniform InGaAs Nanowires in 30 nm-Diameter Openings with Lower Density in Selective-Area Metal-Organic Vapor-Phase Epitaxy
    Y. Kohashi, Y. Kobayashi, M. Yatago, S. Hara, J. Motohisa Collected Abstract of the 31st Electronic Materials Symposium (EMS-31), Izu, Japan, July 11-13, 2012, Th5-2 1 -2 2012年 [査読無し][通常論文]
  • Selective Growth and Characterization of InP Nanowires by Metal-Organic Vapor-Phase Epitaxy
    S. Yanase, Y. Kohashi, K. Ikejiri, S. Hara, J. Motohisa Collected Abstract of the 31st Electronic Materials Symposium (EMS-31), Izu, Japan, July 11-13, 2012, Th5-4 1 -2 2012年 [査読無し][通常論文]
  • Keita Komagata, Shinjiro Hara, Shingo Ito, Takashi Fukui JAPANESE JOURNAL OF APPLIED PHYSICS 50 (6) 1 -2 2011年06月 [査読有り][通常論文]
     
    The authors report on the ordered planar arrangements of ferromagnetic MnAs/AlGaAs nanocluster (NC) composites grown on partially SiO2-masked GaAs (111) B substrates by selective-area metal-organic vapor phase epitaxy for lateral magnetoresistive device applications. Each of the NCs in the composites has an elongated shape and a different size to control their magnetized directions and coercive forces. By designing and optimizing the initial SiO2-mask openings formed by electron beam lithography on the template wafers, we fabricate elongated NC composites with a spatial gap of 5 to 10 nm between two NCs and an elongated NC connected to a relatively large MnAs NC electrode. Cross-sectional lattice images taken with a transmission electron microscope show that the interfaces between MnAs and AlGaAs layers of the NCs are atomically abrupt. Magnetic force microscopy at room temperature reveals that the magnetized directions in each of the NC composites are rotated by around 180 degrees when the applied direction of the external magnetic fields is rotated in the opposite direction. (C) 2011 The Japan Society of Applied Physics
  • Effect of Growth Temperature on the Growth of InGaAs Nanowires in Selective-Area MOVPE
    Y. Kohashi, S. Hara, J. Motohisa Collected Abstract of the 2011 International Symposium on Advanced Nanodevices and Nanotechnology (ISANN 2011), Kaanapali, Maui, Hawaii, USA, December 4-9, 2011, P1-5 1 -1 2011年 [査読有り][通常論文]
  • Fabrication and Characterization of InAs Nanowire Vertical Surrounding-Gate FETs
    Y. Kobayashi, Y. Kohashi, S. Hara, J. Motohisa Collected Abstract of the 2011 International Symposium on Advanced Nanodevices and Nanotechnology (ISANN 2011), Kaanapali, Maui, Hawaii, USA, December 4-9, 2011, P1-16 1 -1 2011年 [査読有り][通常論文]
  • InP Nanowire Light Emitting Diodes
    S. Maeda, K. Tomioka, S. Hara, J. Motohisa Collected Abstract of the 2011 Material Research Society (MRS) Fall Meeting, Boston, Massachusetts, USA, November 28-December 2, 2011, BB20.48 1 -1 2011年 [査読有り][通常論文]
  • Fabrication of New Planar Magnetoelectronic Devices Based on Regularly Arranged MnAs Nanoclusters
    M. T. Elm, P. J. Klar, S. Hara Collected Abstract of the 24th International Microprocesses and Nanotechnology Conference (MNC 2011), Kyoto, Japan, October 24-27, 2011, 27B-8-2 1 -2 2011年 [査読有り][通常論文]
  • Fabrication and Characterization of InAs Nanowire Vertical Surrounding-Gate FETs
    Y. Kobayashi, Y. Kohashi, S. Hara, J. Motohisa Collected Abstract of the 24th International Microprocesses and Nanotechnology Conference (MNC 2011), Kyoto, Japan, October 24-27, 2011, 26C-4-3 1 -2 2011年 [査読有り][通常論文]
  • Fabrication of III-V Nanowire-Based Surrounding-Gate Transistors on Si Substrate
    K. Tomioka, J. Motohisa, S. Hara, T. Fukui Collected Abstract of the 220th ECS Meeting and Electrochemical Energy Summit, Boston, Massachusetts, USA, October 9-14, 2011, #1885 1 -1 2011年 [査読有り][通常論文]
  • Fabrication and Characterization of InAs Nanowire Vertical Surrounding-Gate FETs
    Y. Kobayashi, Y. Kohashi, S. Hara, J. Motohisa Collected Abstract of the 2011 International Workshop on Quantum Nanostructures and Nanoelectronics (QNN 2011), Tokyo, Japan, October 3-4, 2011, P-55 1 -1 2011年 [査読有り][通常論文]
  • Study on the Growth of In-Rich InGaAs Nanowires by Selective-Area Metal-Organic Vapor-Phase Epitaxy
    Y. Kohashi, S. Hara, J. Motohisa Collected Abstract of the 2011 International Conference on Solid State Devices and Materials (SSDM 2011), Nagoya, Japan, September 28-30, 2011, KM-5-4 1 -2 2011年 [査読有り][通常論文]
  • Fabrication and Characterization of InP Nanowire Light Emitting Diodes
    S. Maeda, K. Tomioka, S. Hara, J. Motohisa Collected Abstract of the 2011 International Conference on Solid State Devices and Materials (SSDM 2011), Nagoya, Japan, September 28-30, 2011, P-13-1 1 -2 2011年 [査読有り][通常論文]
  • Growth and Characterization of MnAs Nanoclusters Embedded in GaAs Nanowires by Metal-Organic Vapor-Phase Epitaxy
    M. Yatago, S. Sakita, S. Hara Collected Abstract of the 2011 International Conference on Solid State Devices and Materials (SSDM 2011), Nagoya, Japan, September 28-30, 2011, KM-5-2 1 -2 2011年 [査読有り][通常論文]
  • Investigation of Regular Arrangements of Ferromagnetic MnAs Nanoclusters for New Planar Magnetoelectronic Devices
    M. T. Elm, M. Fischer, P. J. Klar, S. Hara Collected Abstract of the 2011 International Conference on Solid State Devices and Materials (SSDM 2011), Nagoya, Japan, September 28-30, 2011, P-12-1 1 -2 2011年 [査読有り][通常論文]
  • Composition-Dependent Growth Dynamics of InGaAs Nanowires in Selective-Area MOVPE
    Y. Kohashi, T. Sato, S. Hara, T. Fukui, J. Motohisa Collected Abstract of the 38th International Sympsium on Compound Semiconductors (ISCS 2011), Berlin, Germany, May 22-26, 2011, Tu-4A.4 1 -2 2011年 [査読有り][通常論文]
  • Y. Takayama, K. Tomioka, S. Hara, T. Fukui, J. Motohisa PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 2 8 (2) 324 -324 2011年 [査読有り][通常論文]
     
    We report on the selective-area metalorganic vapor phase epitxial growth of GaSb on (111)-oriented GaAs substrates partially covered with a SiO2 mask layer. The mask pattern consisted of periodic circular openings with diameter ranging from 200 to 500 nm and pitch ranging from 500 nm to 3 mu m. Selective-area growth of GaSb was achieved on the (111) A substrates, while GaSb was grown in few parts of the mask openings on the (111) B substrate. In addition, exposure to an Sb-precursor prior to the growth significantly affected the coverage of GaSb of the mask opening region, and it increases (decreases) on the (111) A ((111) B) substrate as compared to AsH3 exposure. The results are explained based on a model of exchange of Sb-As at the initial stage of growth. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
  • Thaer M. Dieb, Masaharu Yoshioka, Shinjiro Hara Proceedings - 2011 IEEE International Conference on Granular Computing, GrC 2011 Vol. 1 167 -170 2011年 [査読有り][通常論文]
     
    Nanodevices development process is not well systematized. In order to support this development process, we have been working on an experimental record management system that aims at analyzing previous manufacturing experiments to provide an insight on future manufacturing. However, we found that experimental records do not have enough information for detailed analysis. In this paper, we propose an approach to extract extra information (metadata) from Nanodevices development papers that can enhance the analysis of experimental results. © 2011 IEEE.
  • Thaer M. Dieb, Masaharu Yoshioka, Shinjiro Hara Proceedings - 2011 IEEE International Conference on Granular Computing, GrC 2011 Vol. 1 167 -170 2011年 [査読無し][通常論文]
     
    Nanodevices development process is not well systematized. In order to support this development process, we have been working on an experimental record management system that aims at analyzing previous manufacturing experiments to provide an insight on future manufacturing. However, we found that experimental records do not have enough information for detailed analysis. In this paper, we propose an approach to extract extra information (metadata) from Nanodevices development papers that can enhance the analysis of experimental results. © 2011 IEEE.
  • Growth Mechanism of III-V Semiconductor Nanowires in Selective-Area Metal-Organic Vapor Phase Epitaxy
    J. Motohisa, H. Yoshida, K. Ikejiri, Y. Kitauchi, K. Tomioka, S. Hara, K. Hiruma, T. Fukui Collected Abstract of the 2010 International Chemical Congress of Pacific Basin Societies (PACIFICHEM 2010), Honolulu, Hawaii, USA, December 15-20, 2010 1 -1 2010年 [査読有り][通常論文]
  • Selective-Area Growth and Characterization of MnAs Nanocluster Composites for Lateral Magneto-Resistive Device Applications
    K. Komagata, S. Hara, S. Ito, T. Fukui Collected Abstract of the 2010 Material Research Society (MRS) Fall Meeting, Boston, Massachusetts, USA, November 29-December 3, 2010, Y15.2 1 -1 2010年 [査読有り][通常論文]
  • Integration of III-V NW-Based Vertical FETs on Si and Device Concept for Tunnel FET Using III-V/Si Heterojunctions
    K. Tomioka, J. Motohisa, S. Hara, K. Hiruma, T. Tanaka, T. Fukui Collected Abstract of the 2010 Material Research Society (MRS) Fall Meeting, Boston, Massachusetts, USA, November 29-December 3, 2010, W5.5 1 -1 2010年 [査読有り][通常論文]
  • Selective-Area Growth of InGaAs Nanowires on Si (111) Substrate
    K. Tomioka, M. Yoshimura, J. Motohisa, S. Hara, K. Hiruma, T. Fukui Collected Abstract of the 2010 Material Research Society (MRS) Fall Meeting, Boston, Massachusetts, USA, November 29-December 3, 2010, W9.30 1 -1 2010年 [査読有り][通常論文]
  • Free-Standing GaAs/AlGaAs Heterostructure Nanowires with a GaAs Quantum Well Formed by Selective-Area Metal-Organic Vapor-Phase Epitaxy
    K. Hiruma, A. Hayashida, T. Sato, S. Hara, J. Motohisa, T. Fukui Collected Abstract of the 5th Nanowire Growth Workshop (NWG 2010), Rome, Italy, Nevember 4-5, 2010, p. 105 105 -105 2010年 [査読有り][通常論文]
  • Fabrication and Characterization of Nanowire-Based LEDs
    S. Maeda, K. Tomioka, T. Fukui, S. Hara, J. Motohisa Collected Abstract of the 6th International Workshop on Nano-scale Spectroscopy and Nanotechnology (NSS 6), Kobe, Japan, October 25-29, 2010 2010年 [査読有り][通常論文]
  • Masatoshi Yoshimura, Katsuhiro Tomioka, Kenji Hiruma, Shinjiro Hara, Junichi Motohisa, Takashi Fukui JAPANESE JOURNAL OF APPLIED PHYSICS 49 (4) 1 -2 2010年 [査読有り][通常論文]
     
    We fabricated InGaAs nanowires (NWs) in SiO2 mask openings on a GaAs(111) B substrate at growth temperatures of 600-700 degrees C using catalyst-free selective-area metal organic vapor phase epitaxy. At a growth temperature of 600 degrees C, particle-like depositions occurred, but they decreased in number and density when the growth temperature was increased to 650 degrees C and disappeared above 675 degrees C. The heights and growth rates of the NWs increased when the growth temperature was increased and the mask opening diameter was decreased from 300 to 50 nm. Photoluminescence (PL) spectra measured for the NWs indicated a blue shift in the peak from 0.95 to 1.3 eV as the growth temperature was increased from 600 to 700 degrees C, indicating an increase in the Ga composition from 62 to 88% in the InGaAs NWs. (C) 2010 The Japan Society of Applied Physics
  • Electrical Characterization of InGaAs Nanowire MISFETs Fabricated by Dielectric-First Process
    Y. Kohashi, T. Sato, K. Tomioka, S. Hara, T. Fukui, J. Motohisa Collected Abstract of the 2010 International Conference on Solid State Devices and Materials (SSDM 2010), Tokyo, Japan, September 22-24, 2010, J-7-3 1 -2 2010年 [査読有り][通常論文]
  • Free-Standing GaAs/AlGaAs Heterostructure Nanowires with a Quantum Well Formed by Selective-Area Metal-Organic Vapor-Phase Epitaxy
    K. Hiruma, A. Hayashida, T. Sato, S. Hara, J. Motohisa, T. Fukui Collected Abstract of the 16th International Conference on Crystal Growth (ICCG-16), Beijing, China, August 8-13, 2010 2010年 [査読有り][通常論文]
  • Selective-Area Growth of InGaAs Nanowires on Si Substrate
    K. Tomioka, J. Motohisa, S. Hara, K. Hiruma, T. Fukui Collected Abstract of the Nano Science + Engineering Symposia, the SPIE Optics + Photonics Conferences 2010, San Diego, California, USA, August 1-5, 2010, 7768-8 1 -1 2010年 [査読有り][通常論文]
  • Electrical Characterization of InGaAs Nanowire MISFETs Fabricated by Dielectric-First Process
    Y. Kohashi, T. Sato, K. Tomioka, S. Hara, T. Fukui, J. Motohisa Collected Abstract of the 29th Electronic Materials Symposium (EMS-29), Izu, Japan, July 14-16, 2010 1 -2 2010年 [査読無し][通常論文]
  • Selective-Area MOVPE Growth Using Masked Substrates Prepared by Nanoimprint Lithography
    M. Inoue, T. Sato, M. Ikebe, S. Hara, T. Fukui, J. Motohisa Collected Abstract of the 29th Electronic Materials Symposium (EMS-29), Izu, Japan, July 14-16, 2010 1 -2 2010年 [査読無し][通常論文]
  • Lattice-Mismatched Growth of InGaAs Nanowires Formed on GaAs (111)B by Selective-Area MOVPE
    M. Yoshimura, K. Tomioka, K. Hiruma, S. Hara, J. Motohisa, T. Fukui Collected Abstract of the 29th Electronic Materials Symposium (EMS-29), Izu, Japan, July 14-16, 2010 1 -2 2010年 [査読無し][通常論文]
  • Fabrication of GaAs/InAs Axial Nanowires on Si by Selective-Area MOVPE with Regrowth Method
    K. Tomioka, J. Motohisa, S. Hara, K. Hiruma, T. Fukui Collected Abstract of the 37th International Symposium on Compound Semiconductors (ISCS-37), Kagawa, Japan, May 31-June 4, 2010, p. 328 328 -328 2010年 [査読有り][通常論文]
  • Ordered Planar Arrangements of MnAs Nanoclusters by Selective-Area Metal-Organic Vapor Phase Epitaxy for Lateral Magneto-Resistive Devices
    S. Hara, S. Ito, K. Morita, K. Komagata, T. Fukui Collected Abstract of the 15th International Conference on Metal-Organic Vapor Phase Epitaxy (ICMOVPE-XV), Incline Village, Nevada, USA, May 23-28, 2010, p. 31 31 -31 2010年 [査読有り][通常論文]
  • Fabrication and Characterization of InAs Tubular Channel FETs using Core-Shell Nanowires Grown by SA-MOVPE
    T. Sato, J. Motohisa, E. Sano, S. Hara, T. Fukui Collected Abstract of the 15th International Conference on Metal-Organic Vapor Phase Epitaxy (ICMOVPE-XV), Incline Village, Nevada, USA, May 23-28, 2010, p. 31 31 -31 2010年 [査読有り][通常論文]
  • Heteroepitaxial growth of InGaAs nanowires formed on GaAs(111)B by Selective-Area MOVPE
    M. Yoshimura, K. Tomioka, K. Hiruma, S. Hara, J. Motohisa, T. Fukui Collected Abstract of the 15th International Conference on Metal-Organic Vapor Phase Epitaxy (ICMOVPE-XV), Incline Village, Nevada, USA, May 23-28, 2010, p. 19 19 -19 2010年 [査読有り][通常論文]
  • Selective-Area Growth of InGaAs Nanowires on Si Substrate
    K. Tomioka, M. Yoshimura, J. Motohisa, S. Hara, K. Hiruma, T. Fukui Collected Abstract of the 15th International Conference on Metal-Organic Vapor Phase Epitaxy (ICMOVPE-XV), Incline Village, Nevada, USA, May 23-28, 2010, p. 19 19 -19 2010年 [査読有り][通常論文]
  • T. Fukui, K. Tomioka, S. Hara, K. Hiruma, J. Motohisa 2010 22ND INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) CFP10IIP-PRT 1 -3 2010年 [査読有り][通常論文]
     
    We fabricated various kinds of III-V semiconductor nanowires and core-shell nanowires using selective area metalorganic vapor phase epitaxy (SA-MOVPE) on (111) oriented substrates, such as GaAs, GaAs/AlGaAs, InP, InP/InAs/InP on III-V substrates, and InAs and GaAs on Si. As for device applications, we fabricated GaAs/GaAsP core-shell nanowire photo-excited lasers, and InP core-shell pn junction solar cells. I will also introduce III-V semiconductor nanowires grown on Si (111) substrates
  • Yasunori Kobayashi, Junichi Motohisa, Katsuhiro Tomioka, Shinjiro Hara, Kenji Hiruma, Takashi Fukui 2010 22ND INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) CFP10IIP-PRT 1 -4 2010年 [査読有り][通常論文]
     
    We grew InAsP and InP/InAsP/InP heterostructure NWs (NWs) by selective-area MOVPE and carried out micro-photoluminescence (mu-PL) measurement. We investigated growth conditions for InAsP NWs and that embedded in InP NWs, and obtained exciton and biexciton emissions from InAsP QDs at optimized growth conditions. Negative binding energy of biexciton was observed due to the strong Coulomb interaction between the holes in the QDs.
  • Masaharu Yoshioka, Katsuhiro Tomioka, Shinjiroh Hara, Takashi Fukui iiWAS2010 - 12th International Conference on Information Integration and Web-Based Applications and Services Vol. 1 871 -874 2010年 [査読有り][通常論文]
     
    We are developing a framework for knowledge creation in nanodevice development, based on collaboration between nanodevice engineers and computer science researchers. Development of nanodevices requires a variety of knowledge some of this knowledge is tacit, based on the user's experience. Therefore, it is difficult to become a good engineer in this development process. We propose the concept of "Evidence-based experiment planning" and develop a process for supporting experiment planning in nanodevice development. This system applies knowledge discovery techniques to records of previous experiments to extract experienced engineers' tacit knowledge. Copyright 2010 ACM.
  • T. Fukui, K. Tomioka, S. Hara, K. Hiruma, J. Motohisa 2010 22ND INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) CFP10IIP-PRT 1 -3 2010年 [査読無し][通常論文]
     
    We fabricated various kinds of III-V semiconductor nanowires and core-shell nanowires using selective area metalorganic vapor phase epitaxy (SA-MOVPE) on (111) oriented substrates, such as GaAs, GaAs/AlGaAs, InP, InP/InAs/InP on III-V substrates, and InAs and GaAs on Si. As for device applications, we fabricated GaAs/GaAsP core-shell nanowire photo-excited lasers, and InP core-shell pn junction solar cells. I will also introduce III-V semiconductor nanowires grown on Si (111) substrates
  • Yasunori Kobayashi, Junichi Motohisa, Katsuhiro Tomioka, Shinjiro Hara, Kenji Hiruma, Takashi Fukui 2010 22ND INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) CFP10IIP-PRT 1 -4 2010年 [査読無し][通常論文]
     
    We grew InAsP and InP/InAsP/InP heterostructure NWs (NWs) by selective-area MOVPE and carried out micro-photoluminescence (mu-PL) measurement. We investigated growth conditions for InAsP NWs and that embedded in InP NWs, and obtained exciton and biexciton emissions from InAsP QDs at optimized growth conditions. Negative binding energy of biexciton was observed due to the strong Coulomb interaction between the holes in the QDs.
  • Knowledge Exploratory Project for Nanodevice Design and Manufacturing
    Proceedings of the 12th International Conference on Information Integration and Web-based Applications & Services, ACM Vol. 1 869 -872 2010年 [査読無し][通常論文]
  • Fabrication of GaAs Nanowire-Based Light Emitting Diode Array on Si Substrate
    Collected Abstract of the 3rd International Conference on One-Dimensional Nanomaterials (ICON 2009), Atlanta, Georgia, USA, December 7-9, 2009 17 2009年 [査読無し][通常論文]
  • Study on InAs Tubular Channel Nanowire FETs
    Collected Abstract of the 3rd International Conference on One-Dimensional Nanomaterials (ICON 2009), Atlanta, Georgia, USA, December 7-9, 2009 76 2009年 [査読無し][通常論文]
  • Highly Polarized Lasing Emission in Single GaAs/AlGaAs/GaAs Core-Shell Nanowires
    Collected Abstract of the 3rd International Conference on One-Dimensional Nanomaterials (ICON 2009), Atlanta, Georgia, USA, December 7-9, 2009 46 2009年 [査読無し][通常論文]
  • Vertical Surrounding Gate Field Effect Transistors using InAs Nanowires on Si Substrates
    Collected Abstract of the 2009 Material Research Society (MRS) Fall Meeting, Boston, Massachusetts, USA, November 30-December 4, 2009 M17.3 2009年 [査読無し][通常論文]
  • Fabrication and Electrical Characterization of InAs Tubular Channel Nanowire FETs
    Collected Abstract of the 2009 International Symposium on Advanced Nanostructures and Nanodevices (ISANN 2009), Kaanapali, Maui, Hawaii, USA, November 29-December 4, 2009 91 -92 2009年 [査読無し][通常論文]
  • Fabrication of GaAs/AlGaAs Core-Multishell Nanowire-Based Light Emitting Diode Array on Si Substrate
    Collected Abstract of the 2009 Material Research Society (MRS) Fall Meeting, Boston, Massachusetts, USA, November 30-December 4, 2009 M10.2 2009年 [査読無し][通常論文]
  • Polarization Sepctroscopy of Single GaAs/AlGaAs/GaAs Core-Shell Nanowire Nanolasers below and above Lasing Threshold
    Collected Abstract of the 2009 International Symposium on Advanced Nanostructures and Nanodevices (ISANN 2009), Kaanapali, Maui, Hawaii, USA, November 29-December 4, 2009 172 -173 2009年 [査読無し][通常論文]
  • Selective-Area Metal-Organic Vapor Phase Epitaxy of Ferromagnetic MnAs Nanoclusters on Si (111) Substrate
    Collected Abstract of the 2009 Material Research Society (MRS) Fall Meeting, Boston, Massachusetts, USA, November 30-December 4, 2009 KK5.12 2009年 [査読無し][通常論文]
  • Structural Characterizations of Ferromagnetic MnAs Nanoclusters on Si (111) Substrate by Selective-Area MOVPE
    Extended Abstract of the 22nd International Microprocesses and Nanotechnology Conference (MNC 2009), Sapporo, Japan, November 16-19, 2009 128 -129 2009年 [査読無し][通常論文]
  • GaAs/AlGaAs Core-Multishell Nanowire-Based Light Emitting Diode Arrays on Si Substrate
    Extended Abstract of the 22nd International Microprocesses and Nanotechnology Conference (MNC 2009), Sapporo, Japan, November 16-19, 2009 474 -475 2009年 [査読無し][通常論文]
  • Growth of Tubular InAs Nanowires for FET Applications
    Collected Abstract of the 4th Nanowire Growth Workshop (NWG 2009), Paris, France, October 26-27, 2009 79 2009年 [査読無し][通常論文]
  • Analysis of Twin Development During Selective-Growth of GaAs Nanowires by Using Catalyst-Free Metal-Organic Vapor-Phase Epitaxy
    Collected Abstract of the 4th Nanowire Growth Workshop (NWG 2009), Paris, France, October 26-27, 2009 71 2009年 [査読無し][通常論文]
  • Fabrication of InAs Nanowire Vertical Surrounding-Gate Field Effect Transistor on Si Substrates
    Extended Abstract of the 2009 International Conference on Solid State Devices and Materials (SSDM 2009), Sendai, Japan, October 6-9, 2009 I-4-2 2009年 [査読無し][通常論文]
  • Growth and Characterization of InGaAs Nanowires Formed on GaAs (111)B by Selective-Area Metal-Organic Vapor Phase Epitaxy
    Extended Abstract of the 2009 International Conference on Solid State Devices and Materials (SSDM 2009), Sendai, Japan, October 6-9, 2009 H-1-9 2009年 [査読無し][通常論文]
  • Fabrication of a GaAs Quantum Well Embedded in AlGaAs/GaAs Hetero-Structure Nanowires by Selective-Area MOVPE
    Collected Abstract of the 4th Nanowire Growth Workshop (NWG 2009), Paris, France, October 26-27, 2009 22 2009年 [査読無し][通常論文]
  • Magnetic Anisotropy in Position-Controllable MnAs Nanoclusters on Semiconductor Substrates by Selective-Area Metal-Organic Vapor Phase Epitaxy
    Collected Abstract of the 18th International Conference on Magnetism (ICM2009), Karlsruhe, Germany, July 26-31, 2009 179 2009年 [査読無し][通常論文]
  • Growth Temperature Dependence of InGaAs Nanowires Grown on GaAs (111)B by Selective-Area Metal-Organic Vapor Phase Epitaxy
    Collected Abstract of the 28th Electronic Materials Symposium (EMS-28), Moriyama, Japan, July 8-10, 2009 135 -136 2009年 [査読無し][通常論文]
  • Structural Transition of InP Nanowires in Selective-Area Metal-Organic Vapor Phase Epitaxy
    Collected Abstract of the 14th International Conference on Modulated Semiconductor Structures (MSS-14), Kobe, Japan, July 19-24, 2009 81 2009年 [査読無し][通常論文]
  • Growth of Vertically Aligned III-V Compound Semiconductor Nanowires by Selective-Area MOVPE
    Collected Abstract of the 28th Electronic Materials Symposium (EMS-28), Moriyama, Japan, July 8-10, 2009 137 -138 2009年 [査読無し][通常論文]
  • Selective-Area Metal-Organic Vapour Phase Epitaxy of Anisotropic-Shaped Ferromagnetic MnAs Nanoclusters for Magneto-Resistive Device Applications
    Extended Abstract of the 13th European Workshop on Metal-Organic Vapour Phase Epitaxy (EWMOVPE-XIII), Ulm, Germany, June 7-10, 2009 201 -202 2009年 [査読無し][通常論文]
  • Fabrication of Axial Heterostructures in III-V Nanowires Grown by Selective-Area MOVPE with Regrowth Method
    Collected Abstract of the 2009 Material Research Society (MRS) Spring Meeting, San Francisco, California, USA, April 13-17, 2009 AA3.4 2009年 [査読無し][通常論文]
  • Growth of p/n-Doped GaAs-AlGaAs Core-Multi-Shell Nanowire Array on Si(111) by Selective-Area MOVPE
    Collected Abstract of the 2009 Material Research Society (MRS) Spring Meeting, San Francisco, California, USA, April 13-17, 2009 AA3.5 2009年 [査読無し][通常論文]
  • Fabrication of GaAs Nanowire-Based Light Emitting Diode Array on Si Substrate
    Collected Abstract of the 3rd International Conference on One-Dimensional Nanomaterials (ICON 2009), Atlanta, Georgia, USA, December 7-9, 2009 17 2009年 [査読無し][通常論文]
  • Study on InAs Tubular Channel Nanowire FETs
    Collected Abstract of the 3rd International Conference on One-Dimensional Nanomaterials (ICON 2009), Atlanta, Georgia, USA, December 7-9, 2009 76 2009年 [査読無し][通常論文]
  • Highly Polarized Lasing Emission in Single GaAs/AlGaAs/GaAs Core-Shell Nanowires
    Collected Abstract of the 3rd International Conference on One-Dimensional Nanomaterials (ICON 2009), Atlanta, Georgia, USA, December 7-9, 2009 46 2009年 [査読無し][通常論文]
  • Vertical Surrounding Gate Field Effect Transistors using InAs Nanowires on Si Substrates
    Collected Abstract of the 2009 Material Research Society (MRS) Fall Meeting, Boston, Massachusetts, USA, November 30-December 4, 2009 M17.3 2009年 [査読無し][通常論文]
  • Fabrication and Electrical Characterization of InAs Tubular Channel Nanowire FETs
    Collected Abstract of the 2009 International Symposium on Advanced Nanostructures and Nanodevices (ISANN 2009), Kaanapali, Maui, Hawaii, USA, November 29-December 4, 2009 91 -92 2009年 [査読無し][通常論文]
  • Fabrication of GaAs/AlGaAs Core-Multishell Nanowire-Based Light Emitting Diode Array on Si Substrate
    Collected Abstract of the 2009 Material Research Society (MRS) Fall Meeting, Boston, Massachusetts, USA, November 30-December 4, 2009 M10.2 2009年 [査読無し][通常論文]
  • Polarization Sepctroscopy of Single GaAs/AlGaAs/GaAs Core-Shell Nanowire Nanolasers below and above Lasing Threshold
    Collected Abstract of the 2009 International Symposium on Advanced Nanostructures and Nanodevices (ISANN 2009), Kaanapali, Maui, Hawaii, USA, November 29-December 4, 2009 172 -173 2009年 [査読無し][通常論文]
  • Selective-Area Metal-Organic Vapor Phase Epitaxy of Ferromagnetic MnAs Nanoclusters on Si (111) Substrate
    Collected Abstract of the 2009 Material Research Society (MRS) Fall Meeting, Boston, Massachusetts, USA, November 30-December 4, 2009 KK5.12 2009年 [査読無し][通常論文]
  • Structural Characterizations of Ferromagnetic MnAs Nanoclusters on Si (111) Substrate by Selective-Area MOVPE
    Extended Abstract of the 22nd International Microprocesses and Nanotechnology Conference (MNC 2009), Sapporo, Japan, November 16-19, 2009 128 -129 2009年 [査読無し][通常論文]
  • GaAs/AlGaAs Core-Multishell Nanowire-Based Light Emitting Diode Arrays on Si Substrate
    Extended Abstract of the 22nd International Microprocesses and Nanotechnology Conference (MNC 2009), Sapporo, Japan, November 16-19, 2009 474 -475 2009年 [査読無し][通常論文]
  • Growth of Tubular InAs Nanowires for FET Applications
    Collected Abstract of the 4th Nanowire Growth Workshop (NWG 2009), Paris, France, October 26-27, 2009 79 2009年 [査読無し][通常論文]
  • Analysis of Twin Development During Selective-Growth of GaAs Nanowires by Using Catalyst-Free Metal-Organic Vapor-Phase Epitaxy
    Collected Abstract of the 4th Nanowire Growth Workshop (NWG 2009), Paris, France, October 26-27, 2009 71 2009年 [査読無し][通常論文]
  • Fabrication of InAs Nanowire Vertical Surrounding-Gate Field Effect Transistor on Si Substrates
    Extended Abstract of the 2009 International Conference on Solid State Devices and Materials (SSDM 2009), Sendai, Japan, October 6-9, 2009 I-4-2 2009年 [査読無し][通常論文]
  • Growth and Characterization of InGaAs Nanowires Formed on GaAs (111)B by Selective-Area Metal-Organic Vapor Phase Epitaxy
    Extended Abstract of the 2009 International Conference on Solid State Devices and Materials (SSDM 2009), Sendai, Japan, October 6-9, 2009 H-1-9 2009年 [査読無し][通常論文]
  • Fabrication of a GaAs Quantum Well Embedded in AlGaAs/GaAs Hetero-Structure Nanowires by Selective-Area MOVPE
    Collected Abstract of the 4th Nanowire Growth Workshop (NWG 2009), Paris, France, October 26-27, 2009 22 2009年 [査読無し][通常論文]
  • Magnetic Anisotropy in Position-Controllable MnAs Nanoclusters on Semiconductor Substrates by Selective-Area Metal-Organic Vapor Phase Epitaxy
    Collected Abstract of the 18th International Conference on Magnetism (ICM2009), Karlsruhe, Germany, July 26-31, 2009 179 2009年 [査読無し][通常論文]
  • Growth Temperature Dependence of InGaAs Nanowires Grown on GaAs (111)B by Selective-Area Metal-Organic Vapor Phase Epitaxy
    Collected Abstract of the 28th Electronic Materials Symposium (EMS-28), Moriyama, Japan, July 8-10, 2009 135 -136 2009年 [査読無し][通常論文]
  • Structural Transition of InP Nanowires in Selective-Area Metal-Organic Vapor Phase Epitaxy
    Collected Abstract of the 14th International Conference on Modulated Semiconductor Structures (MSS-14), Kobe, Japan, July 19-24, 2009 81 2009年 [査読無し][通常論文]
  • Growth of Vertically Aligned III-V Compound Semiconductor Nanowires by Selective-Area MOVPE
    Collected Abstract of the 28th Electronic Materials Symposium (EMS-28), Moriyama, Japan, July 8-10, 2009 137 -138 2009年 [査読無し][通常論文]
  • Selective-Area Metal-Organic Vapour Phase Epitaxy of Anisotropic-Shaped Ferromagnetic MnAs Nanoclusters for Magneto-Resistive Device Applications
    Extended Abstract of the 13th European Workshop on Metal-Organic Vapour Phase Epitaxy (EWMOVPE-XIII), Ulm, Germany, June 7-10, 2009 201 -202 2009年 [査読無し][通常論文]
  • Fabrication of Axial Heterostructures in III-V Nanowires Grown by Selective-Area MOVPE with Regrowth Method
    Collected Abstract of the 2009 Material Research Society (MRS) Spring Meeting, San Francisco, California, USA, April 13-17, 2009 AA3.4 2009年 [査読無し][通常論文]
  • Growth of p/n-Doped GaAs-AlGaAs Core-Multi-Shell Nanowire Array on Si(111) by Selective-Area MOVPE
    Collected Abstract of the 2009 Material Research Society (MRS) Spring Meeting, San Francisco, California, USA, April 13-17, 2009 AA3.5 2009年 [査読無し][通常論文]
  • Near-Infrared Lasers in GaAs/GaAsP Coaxial Core-Shell Nanowires
    Collected Abstract of the 2008 Material Research Society (MRS) Fall Meeting, Boston, Massachusetts, USA, December 1-5, 2008 LL16.6 2008年 [査読無し][通常論文]
  • Growth Mechanism of GaAs Nanowires using Catalyst-Free Selective-Area Metal-Organic Vapor Phase Epitaxy
    Collected Abstract of the 2008 Material Research Society (MRS) Fall Meeting, Boston, Massachusetts, USA, December 1-5, 2008 LL3.2 2008年 [査読無し][通常論文]
  • Vertical III-V Nanowire Growth on Si Substrate by Selective-Area MOVPE
    Collected Abstract of the 2008 Material Research Society (MRS) Fall Meeting, Boston, Massachusetts, USA, December 1-5, 2008 LL13.8 2008年 [査読無し][通常論文]
  • 冨岡 克広, 佐藤 拓也, 原 真二郎, 本久 順一, 福井 孝志 表面科学 29 (12) 726 -730 2008年 [査読無し][招待有り]
  • Analysis of the Twin Defects Occurring in GaAs Nanowires Grown by Selective-Area Metal-Organic Vapor Phase Epitaxy
    Collected Abstract of the 5th International Symposium on Surface Science and Nanotechnology (ISSS-5), Tokyo, Japan, November 9-13, 2008 262 2008年 [査読無し][通常論文]
  • Magnetic Domain Characterization of MnAs Nanoclusters Formed on GaAs (111)B Surfaces by Selective-Area MOVPE
    Extended Abstract of the 21st International Microprocesses and Nanotechnology Conference (MNC 2008), Fukuoka, Japan, October 27-30, 2008 512 -513 2008年 [査読無し][通常論文]
  • Growth Direction Control and Magnetic Characterizations of MnAs Grown by Selective-Area Metal-Organic Vapor Phase Epitaxy
    Extended Abstract of the 2008 International Conference on Solid State Devices and Materials (SSDM 2008), Tsukuba, Japan, September 23-26, 2008 138 -139 2008年 [査読無し][通常論文]
  • Competitive Growth Process of Tetrahedrons and Hexagons during GaAs Nanowire Formation by Metal-Organic Vapor Phase Epitaxy
    Collected Abstract of the 3rd International Workshop on Nanowire Growth Mechanisms, Duisburg, Germany, September 15-16, 2008 11 2008年 [査読無し][通常論文]
  • Selective-Area MOVPE Growth of InGaAs Nanowires and Their Photoluminescence Characterization
    Collected Abstract of the 27th Electronic Materials Symposium (EMS-27), Izu, Japan, July 9-11, 2008 37 -38 2008年 [査読無し][通常論文]
  • Endotaxial Nanoclustering of MnAs in Lattice-Mismatched Semiconductor Layers during Metal-Organic Vapor Phase Epitaxy
    Collected Abstract of the 2008 International Conference on Electronic Materials (ICEM 2008), Sydney, Australia, July 27-August 1, 2008 E2-S2.3 2008年 [査読無し][通常論文]
  • J. Noborisaka, T. Sato, J. Motohisa, K. Tomioka, S. Hara, T. Fukui Device Research Conference - Conference Digest, DRC 177 -178 2008年 [査読無し][通常論文]
  • Selective-Area MOVPE of InP/InGaAs Air-Hole Arrays on InP for Photonic Crystal Applications
    Extended Abstract of the 14th International Conference on Metal-Organic Vapor Phase Epitaxy (ICMOVPE-XIV), Metz, France, June 1-6, 2008 79 -80 2008年 [査読無し][通常論文]
  • Structural and Magnetic Characterizations of Ferromagnetic MnAs/GaAs Nanoclusters Formed by Selective-Area MOVPE
    Extended Abstract of the 14th International Conference on Metal-Organic Vapor Phase Epitaxy (ICMOVPE-XIV), Metz, France, June 1-6, 2008 81 -82 2008年 [査読無し][通常論文]
  • Position-Controlled Growth of GaAs Nanowires on Si (111) by Selective-Area Metal-Organic Vapor Phase Epitaxy
    Extended Abstract of the 14th International Conference on Metal-Organic Vapor Phase Epitaxy (ICMOVPE-XIV), Metz, France, June 1-6, 2008 91 -92 2008年 [査読無し][通常論文]
  • Fabrication and Optical Characterization of InGaAs Nanowires by Selective-Area MOVPE
    Extended Abstract of the 14th International Conference on Metal-Organic Vapor Phase Epitaxy (ICMOVPE-XIV), Metz, France, June 1-6, 2008 87 -88 2008年 [査読無し][通常論文]
  • 「MOCVD法による半導体ナノワイヤの作製とデバイス応用」
    真空ジャーナル (No. 117) 15 -17 2008年 [査読無し][招待有り]
  • 「III-V族化合物半導体ナノワイヤにおける閃亜鉛鉱構造とウルツ鉱構造の構造相転移」
    日本結晶成長学会誌 Vol. 34 (No. 4) 224 -232 2008年 [査読無し][招待有り]
  • Near-Infrared Lasers in GaAs/GaAsP Coaxial Core-Shell Nanowires
    Collected Abstract of the 2008 Material Research Society (MRS) Fall Meeting, Boston, Massachusetts, USA, December 1-5, 2008 LL16.6 2008年 [査読無し][通常論文]
  • Growth Mechanism of GaAs Nanowires using Catalyst-Free Selective-Area Metal-Organic Vapor Phase Epitaxy
    Collected Abstract of the 2008 Material Research Society (MRS) Fall Meeting, Boston, Massachusetts, USA, December 1-5, 2008 LL3.2 2008年 [査読無し][通常論文]
  • Vertical III-V Nanowire Growth on Si Substrate by Selective-Area MOVPE
    Collected Abstract of the 2008 Material Research Society (MRS) Fall Meeting, Boston, Massachusetts, USA, December 1-5, 2008 LL13.8 2008年 [査読無し][通常論文]
  • Katsuhiro TOMIOKA, Takuya SATO, Shinjiroh HARA, Junichi MOTOHISA, Takashi FUKUI J. Surf. Sci. Soc. Jpn. 29 (12) 726 -730 2008年 [査読無し][通常論文]
  • Analysis of the Twin Defects Occurring in GaAs Nanowires Grown by Selective-Area Metal-Organic Vapor Phase Epitaxy
    Collected Abstract of the 5th International Symposium on Surface Science and Nanotechnology (ISSS-5), Tokyo, Japan, November 9-13, 2008 262 2008年 [査読無し][通常論文]
  • Magnetic Domain Characterization of MnAs Nanoclusters Formed on GaAs (111)B Surfaces by Selective-Area MOVPE
    Extended Abstract of the 21st International Microprocesses and Nanotechnology Conference (MNC 2008), Fukuoka, Japan, October 27-30, 2008 512 -513 2008年 [査読無し][通常論文]
  • Growth Direction Control and Magnetic Characterizations of MnAs Grown by Selective-Area Metal-Organic Vapor Phase Epitaxy
    Extended Abstract of the 2008 International Conference on Solid State Devices and Materials (SSDM 2008), Tsukuba, Japan, September 23-26, 2008 138 -139 2008年 [査読無し][通常論文]
  • Competitive Growth Process of Tetrahedrons and Hexagons during GaAs Nanowire Formation by Metal-Organic Vapor Phase Epitaxy
    Collected Abstract of the 3rd International Workshop on Nanowire Growth Mechanisms, Duisburg, Germany, September 15-16, 2008 11 2008年 [査読無し][通常論文]
  • Selective-Area MOVPE Growth of InGaAs Nanowires and Their Photoluminescence Characterization
    Collected Abstract of the 27th Electronic Materials Symposium (EMS-27), Izu, Japan, July 9-11, 2008 37 -38 2008年 [査読無し][通常論文]
  • Endotaxial Nanoclustering of MnAs in Lattice-Mismatched Semiconductor Layers during Metal-Organic Vapor Phase Epitaxy
    Collected Abstract of the 2008 International Conference on Electronic Materials (ICEM 2008), Sydney, Australia, July 27-August 1, 2008 E2-S2.3 2008年 [査読無し][通常論文]
  • J. Noborisaka, T. Sato, J. Motohisa, K. Tomioka, S. Hara, T. Fukui Device Research Conference - Conference Digest, DRC 177 -178 2008年 [査読無し][通常論文]
  • Selective-Area MOVPE of InP/InGaAs Air-Hole Arrays on InP for Photonic Crystal Applications
    Extended Abstract of the 14th International Conference on Metal-Organic Vapor Phase Epitaxy (ICMOVPE-XIV), Metz, France, June 1-6, 2008 79 -80 2008年 [査読無し][通常論文]
  • Structural and Magnetic Characterizations of Ferromagnetic MnAs/GaAs Nanoclusters Formed by Selective-Area MOVPE
    Extended Abstract of the 14th International Conference on Metal-Organic Vapor Phase Epitaxy (ICMOVPE-XIV), Metz, France, June 1-6, 2008 81 -82 2008年 [査読無し][通常論文]
  • Position-Controlled Growth of GaAs Nanowires on Si (111) by Selective-Area Metal-Organic Vapor Phase Epitaxy
    Extended Abstract of the 14th International Conference on Metal-Organic Vapor Phase Epitaxy (ICMOVPE-XIV), Metz, France, June 1-6, 2008 91 -92 2008年 [査読無し][通常論文]
  • Fabrication and Optical Characterization of InGaAs Nanowires by Selective-Area MOVPE
    Extended Abstract of the 14th International Conference on Metal-Organic Vapor Phase Epitaxy (ICMOVPE-XIV), Metz, France, June 1-6, 2008 87 -88 2008年 [査読無し][通常論文]
  • Fabrication of Semiconductor Nanowires by MOCVD and Their Device Applications
    Vacuum Journal (No. 117) 15 -17 2008年 [査読無し][通常論文]
  • Formation of III-V Compound Semiconductor Nanowires and Crystal Structure Change between Zincblende and Wurtzite
    J. Jpn. Assoc. Cryst. Growth Vol. 34 (No. 4) 224 -232 2008年 [査読無し][通常論文]
  • III-V Semiconductor Hetero-Structure Nanowires by Selective-Area MOVPE
    Extended Abstract of the 2007 International Conference on Solid State Devices and Materials (SSDM 2007), Tsukuba, Japan, September 18-21, 2007 810 -811 2007年 [査読無し][通常論文]
  • MOVPE Condition Dependences of MnAs Nanoclusters Grown on GaInAs (111)A Surfaces
    Extended Abstract of the 2007 International Conference on Solid State Devices and Materials (SSDM 2007), Tsukuba, Japan, September 18-21, 2007 66 -67 2007年 [査読無し][通常論文]
  • Self-Assembly and Selective-Area Formation of Ferromagnetic MnAs Nanoclusters on Lattice-Mismatched Semiconductor Surfaces by MOVPE
    Collected Abstract of the 13th Biennial US Workshop on Organo-Metallic Vapor Phase Epitaxy, Salt Lake City, Utah, USA, August 12-17, 2007 o-01 2007年 [査読無し][通常論文]
  • Growth of InGaAs Nanowires on InP (111)B Substrates by Selective-Area MOVPE
    Collected Abstract of the 13th Biennial US Workshop on Organo-Metallic Vapor Phase Epitaxy, Salt Lake City, Utah, USA, August 12-17, 2007 o-08 2007年 [査読無し][通常論文]
  • Growth Condition Dependences of GaAs Nanowires by Selective-Area MOVPE
    Collected Abstract of the 26th Electronic Materials Symposium (EMS-26), Moriyama, Japan, July 4-6, 2007 217 -218 2007年 [査読無し][通常論文]
  • Heteroepitaxial Growth of InAs Nanowires using Selective-Area MOVPE
    Collected Abstract of the 26th Electronic Materials Symposium (EMS-26), Moriyama, Japan, July 4-6, 2007 219 -220 2007年 [査読無し][通常論文]
  • MOVPE Growth of Ferromagnetic MnAs Nanoclusters Well-Oriented on Lattice-Mismatched Surfaces
    Extended Abstract of the 12th European Workshop on Metal-Organic Vapour Phase Epitaxy, Bratislava, Slovakia, June 3-6, 2007 107 -108 2007年 [査読無し][通常論文]
  • Position-Controlled Heteroepitaxial Growth of InAs Nanowires on Lattice-Mismatched Substrates by Selective-Area MOVPE
    Collected Abstract of the 2007 Material Research Society (MRS) Spring Meeting, San Francisco, California, USA, April 9-13, 2007 DD12.48 2007年 [査読無し][通常論文]
  • Growth Direction Control of Ferromagnetic MnAs Nanoclusters by Selective-Area Metal-Organic Vapor Phase Epitaxy
    Collected Abstract of the 2007 Material Research Society (MRS) Fall Meeting, Boston, Massachusetts, USA, November 26-30, 2007 FF12.25 2007年 [査読無し][通常論文]
  • Twin Defects in GaAs Nanowire Fabricated by Selective-Area MOVPE
    Collected Abstract of the 2007 International Symposium on Advanced Nanodevices and Nanotechnology (ISANN 2007), Waikoloa, Hawaii, USA, December 2-7, 2007 xx 2007年 [査読無し][通常論文]
  • (InGa)As Nanowire Field Effect Transistors
    Collected Abstract of the 2007 International Symposium on Advanced Nanodevices and Nanotechnology (ISANN 2007), Waikoloa, Hawaii, USA, December 2-7, 2007 xx 2007年 [査読無し][通常論文]
  • Growth of InAs Nanowires on Si (111) by Selective-Area MOVPE
    Collected Abstract of the 9th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-9), Tokyo, Japan, November 11-15, 2007 15Aa2-5 2007年 [査読無し][通常論文]
  • Fabrication of Ferromagnetic MnAs Nanoclusters by Selective-Area Metal-Organic Vapor Phase Epitaxy on GaAs (111)B Substrate
    Collected Abstract of the 34th International Symposium on Compound Semiconductors (ISCS-34), Kyoto, Japan, October 15-18, 2007 182 2007年 [査読無し][通常論文]
  • Formation and Characterization of Fabry-Perot Cavities in Single GaAs Nanowires
    Collected Abstract of the 34th International Symposium on Compound Semiconductors (ISCS-34), Kyoto, Japan, October 15-18, 2007 273 2007年 [査読無し][通常論文]
  • III-V Semiconductor Hetero-Structure Nanowires by Selective-Area MOVPE
    Extended Abstract of the 2007 International Conference on Solid State Devices and Materials (SSDM 2007), Tsukuba, Japan, September 18-21, 2007 810 -811 2007年 [査読無し][通常論文]
  • MOVPE Condition Dependences of MnAs Nanoclusters Grown on GaInAs (111)A Surfaces
    Extended Abstract of the 2007 International Conference on Solid State Devices and Materials (SSDM 2007), Tsukuba, Japan, September 18-21, 2007 66 -67 2007年 [査読無し][通常論文]
  • Self-Assembly and Selective-Area Formation of Ferromagnetic MnAs Nanoclusters on Lattice-Mismatched Semiconductor Surfaces by MOVPE
    Collected Abstract of the 13th Biennial US Workshop on Organo-Metallic Vapor Phase Epitaxy, Salt Lake City, Utah, USA, August 12-17, 2007 o-01 2007年 [査読無し][通常論文]
  • Growth of InGaAs Nanowires on InP (111)B Substrates by Selective-Area MOVPE
    Collected Abstract of the 13th Biennial US Workshop on Organo-Metallic Vapor Phase Epitaxy, Salt Lake City, Utah, USA, August 12-17, 2007 o-08 2007年 [査読無し][通常論文]
  • Growth Condition Dependences of GaAs Nanowires by Selective-Area MOVPE
    Collected Abstract of the 26th Electronic Materials Symposium (EMS-26), Moriyama, Japan, July 4-6, 2007 217 -218 2007年 [査読無し][通常論文]
  • Heteroepitaxial Growth of InAs Nanowires using Selective-Area MOVPE
    Collected Abstract of the 26th Electronic Materials Symposium (EMS-26), Moriyama, Japan, July 4-6, 2007 219 -220 2007年 [査読無し][通常論文]
  • MOVPE Growth of Ferromagnetic MnAs Nanoclusters Well-Oriented on Lattice-Mismatched Surfaces
    Extended Abstract of the 12th European Workshop on Metal-Organic Vapour Phase Epitaxy, Bratislava, Slovakia, June 3-6, 2007 107 -108 2007年 [査読無し][通常論文]
  • Position-Controlled Heteroepitaxial Growth of InAs Nanowires on Lattice-Mismatched Substrates by Selective-Area MOVPE
    Collected Abstract of the 2007 Material Research Society (MRS) Spring Meeting, San Francisco, California, USA, April 9-13, 2007 DD12.48 2007年 [査読無し][通常論文]
  • Growth Direction Control of Ferromagnetic MnAs Nanoclusters by Selective-Area Metal-Organic Vapor Phase Epitaxy
    Collected Abstract of the 2007 Material Research Society (MRS) Fall Meeting, Boston, Massachusetts, USA, November 26-30, 2007 FF12.25 2007年 [査読無し][通常論文]
  • Twin Defects in GaAs Nanowire Fabricated by Selective-Area MOVPE
    Collected Abstract of the 2007 International Symposium on Advanced Nanodevices and Nanotechnology (ISANN 2007), Waikoloa, Hawaii, USA, December 2-7, 2007 xx 2007年 [査読無し][通常論文]
  • (InGa)As Nanowire Field Effect Transistors
    Collected Abstract of the 2007 International Symposium on Advanced Nanodevices and Nanotechnology (ISANN 2007), Waikoloa, Hawaii, USA, December 2-7, 2007 xx 2007年 [査読無し][通常論文]
  • Growth of InAs Nanowires on Si (111) by Selective-Area MOVPE
    Collected Abstract of the 9th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-9), Tokyo, Japan, November 11-15, 2007 15Aa2-5 2007年 [査読無し][通常論文]
  • Fabrication of Ferromagnetic MnAs Nanoclusters by Selective-Area Metal-Organic Vapor Phase Epitaxy on GaAs (111)B Substrate
    Collected Abstract of the 34th International Symposium on Compound Semiconductors (ISCS-34), Kyoto, Japan, October 15-18, 2007 182 2007年 [査読無し][通常論文]
  • Formation and Characterization of Fabry-Perot Cavities in Single GaAs Nanowires
    Collected Abstract of the 34th International Symposium on Compound Semiconductors (ISCS-34), Kyoto, Japan, October 15-18, 2007 273 2007年 [査読無し][通常論文]
  • Dependences of Ferromagnetic MnAs Nanocluster Formation by Metal-Organic Vapor Phase Epitaxy on Crystallographic Orientations of GaInAs/InP Layers
    Collected Abstract of he 2006 Material Research Society (MRS) Fall Meeting, Boston, Massachusetts, USA, November 27-December 1, 2006 360 -360 2006年 [査読無し][通常論文]
  • Fabrication and Electrical Characterization of InGaAs Nanowires by Selective-Area MOVPE
    Collected Abstract of the 2006 Material Research Society (MRS) Fall Meeting, Boston, Massachusetts, USA, November 27-December 1, 2006 474 -474 2006年 [査読無し][通常論文]
  • Magnetic Properties of Hexagonal MnAs Nanoclusters Formed on GaInAs (111) Surfaces by Metal-Organic Vapor Phase Epitaxy
    Collected Abstract of the 17th International Conference on Magnetism (ICM2006), Kyoto, Japan, August 20-25, 2006 587 -587 2006年 [査読無し][通常論文]
  • Metal-Organic Vapor Phase Epitaxy of Hexagonal Ferromagnetic MnAs Nanoclusters on GaInAs/InP (111)B Surfaces
    Collected Abstract of the 25th Electronic Materials Symposium (EMS-25), Izunokuni, Japan, July 5-7, 2006 164 -165 2006年 [査読無し][通常論文]
  • Selective Area MOVPE and PL Characterizatoin of GaAs-Based Air-Hole Arrays for the Application to 2D Photonic Crystal Slabs
    Collected Abstract of the 25th Electronic Materials Symposium (EMS-25), Izunokuni, Japan, July 5-7, 2006 312 -313 2006年 [査読無し][通常論文]
  • Size and Density Control of Ferromagnetic MnAs Nanoclusters Self-Assembled on GaInAs (111) B Surfaces by Metal-Organic Vapor Phase Epitaxy
    Collected Abstract of the 2006 International Conference on Nanoscience and Technology (ICN+T2006), Basel, Switzerland, July 30-August 4, 2006 106 -106 2006年 [査読無し][通常論文]
  • Self-Assembled Formation of Ferromagnetic MnAs Nanoclusters on GaInAs/InP (111) B Layers by Metal-Organic Vapor Phase Epitaxy
    the 13th International Conference on Metal-Organic Vapor Phase Epitaxy (ICMOVPE-XIII), Miyazaki, Japan, May 22-26, 2006 45 -46 2006年 [査読無し][通常論文]
  • Mechanism of Catalyst-Free Growth of GaAs Nanowires by Selective Area MOVPE
    the 13th International Conference on Metal-Organic Vapor Phase Epitaxy (ICMOVPE-XIII), Miyazaki, Japan, May 22-26, 2006 37 -38 2006年 [査読無し][通常論文]
  • Growth of Highly Uniform InAs Nanowire Arrays by Selective-Area MOVPE
    the 13th International Conference on Metal-Organic Vapor Phase Epitaxy (ICMOVPE-XIII), Miyazaki, Japan, May 22-26, 2006 243 -244 2006年 [査読無し][通常論文]
  • Spectroscopy of Single InGaAs/GaAs Nanowires Grown by Selective-Area Metal-Organic Vapor Phase Epitaxy
    Collected Abstract of the 2006 Material Research Society (MRS) Spring Meeting, San Francisco, California, USA, April 17-21, 2006 347 -347 2006年 [査読無し][通常論文]
  • Controlled Growth of Highly Uniform, Individually Addressable InAs Nanowires by Selective-Area Metalorganic Vapor Phase Epitaxy
    Collected Abstract of the 2006 Material Research Society (MRS) Spring Meeting, San Francisco, California, USA, April 17-21, 2006 354 -355 2006年 [査読無し][通常論文]
  • Dependences of Ferromagnetic MnAs Nanocluster Formation by Metal-Organic Vapor Phase Epitaxy on Crystallographic Orientations of GaInAs/InP Layers
    Collected Abstract of he 2006 Material Research Society (MRS) Fall Meeting, Boston, Massachusetts, USA, November 27-December 1, 2006 360 -360 2006年 [査読無し][通常論文]
  • Fabrication and Electrical Characterization of InGaAs Nanowires by Selective-Area MOVPE
    Collected Abstract of the 2006 Material Research Society (MRS) Fall Meeting, Boston, Massachusetts, USA, November 27-December 1, 2006 474 -474 2006年 [査読無し][通常論文]
  • Magnetic Properties of Hexagonal MnAs Nanoclusters Formed on GaInAs (111) Surfaces by Metal-Organic Vapor Phase Epitaxy
    Collected Abstract of the 17th International Conference on Magnetism (ICM2006), Kyoto, Japan, August 20-25, 2006 587 -587 2006年 [査読無し][通常論文]
  • Metal-Organic Vapor Phase Epitaxy of Hexagonal Ferromagnetic MnAs Nanoclusters on GaInAs/InP (111)B Surfaces
    Collected Abstract of the 25th Electronic Materials Symposium (EMS-25), Izunokuni, Japan, July 5-7, 2006 164 -165 2006年 [査読無し][通常論文]
  • Selective Area MOVPE and PL Characterizatoin of GaAs-Based Air-Hole Arrays for the Application to 2D Photonic Crystal Slabs
    Collected Abstract of the 25th Electronic Materials Symposium (EMS-25), Izunokuni, Japan, July 5-7, 2006 312 -313 2006年 [査読無し][通常論文]
  • Size and Density Control of Ferromagnetic MnAs Nanoclusters Self-Assembled on GaInAs (111) B Surfaces by Metal-Organic Vapor Phase Epitaxy
    Collected Abstract of the 2006 International Conference on Nanoscience and Technology (ICN+T2006), Basel, Switzerland, July 30-August 4, 2006 106 -106 2006年 [査読無し][通常論文]
  • Self-Assembled Formation of Ferromagnetic MnAs Nanoclusters on GaInAs/InP (111) B Layers by Metal-Organic Vapor Phase Epitaxy
    the 13th International Conference on Metal-Organic Vapor Phase Epitaxy (ICMOVPE-XIII), Miyazaki, Japan, May 22-26, 2006 45 -46 2006年 [査読無し][通常論文]
  • Mechanism of Catalyst-Free Growth of GaAs Nanowires by Selective Area MOVPE
    the 13th International Conference on Metal-Organic Vapor Phase Epitaxy (ICMOVPE-XIII), Miyazaki, Japan, May 22-26, 2006 37 -38 2006年 [査読無し][通常論文]
  • Growth of Highly Uniform InAs Nanowire Arrays by Selective-Area MOVPE
    the 13th International Conference on Metal-Organic Vapor Phase Epitaxy (ICMOVPE-XIII), Miyazaki, Japan, May 22-26, 2006 243 -244 2006年 [査読無し][通常論文]
  • Spectroscopy of Single InGaAs/GaAs Nanowires Grown by Selective-Area Metal-Organic Vapor Phase Epitaxy
    Collected Abstract of the 2006 Material Research Society (MRS) Spring Meeting, San Francisco, California, USA, April 17-21, 2006 347 -347 2006年 [査読無し][通常論文]
  • Controlled Growth of Highly Uniform, Individually Addressable InAs Nanowires by Selective-Area Metalorganic Vapor Phase Epitaxy
    Collected Abstract of the 2006 Material Research Society (MRS) Spring Meeting, San Francisco, California, USA, April 17-21, 2006 354 -355 2006年 [査読無し][通常論文]
  • Growth and Characterization of InGaAs Nanowires by Selective Area MOVPE
    Collected Abstracts of the 13th International Symposium on Nanostructures: Physics and Technology, St. Petersburg, Russia, June 20-25, 2005 304 -305 2005年 [査読無し][通常論文]
  • Junichi Motohisa, Jinichiro Noborisaka, Shinjiroh Hara, Masaru Inari and Takashi Fukui: "Catalyst-Free Growth of Semiconductor Nanowires by Selective Area MOVPE", AIP Conference Proceedings, June 30, 2005, Vol. 772, pp. 877-878, Physics of Semiconducto・・・
    2005年 [査読無し][通常論文]
     
    Junichi Motohisa, Jinichiro Noborisaka, Shinjiroh Hara, Masaru Inari and Takashi Fukui: "Catalyst-Free Growth of Semiconductor Nanowires by Selective Area MOVPE", AIP Conference Proceedings, June 30, 2005, Vol. 772, pp. 877-878, Physics of Semiconductors: the 27th International Conference on the Physics of Semiconductors (ICPS-27).*
  • MnAs Nanocluster Formation on GaInAs/InP (111) Layers Grown by Metal-Organic Vapor Phase Epitaxy
    Collected Abstract of the 2005 Material Research Society (MRS) Fall Meeting, Boston, Massachusetts, USA, November 28-December 2, 2005 760 -760 2005年 [査読無し][通常論文]
  • Jinichiro Noborisaka, Junichi Motohisa, Shinjiroh Hara and Takashi Fukui: "Growth and Characterization of GaAs/AlGaAs Core-Shell Nanowires and AlGaAs Nanotubes", Proceedings of the 2005 Nano Science and Technology Institute (NSTI) Nanotechnology Confer・・・
    2005年 [査読無し][通常論文]
     
    Jinichiro Noborisaka, Junichi Motohisa, Shinjiroh Hara and Takashi Fukui: "Growth and Characterization of GaAs/AlGaAs Core-Shell Nanowires and AlGaAs Nanotubes", Proceedings of the 2005 Nano Science and Technology Institute (NSTI) Nanotechnology Conference and Trade Show (Nanotech2005), Anaheim, California, USA, Vol. 3, Chapter 3.1, pp. 225-228 (2005)*
  • Shinji Hashimoto, Junichiro Takeda, Akihiro Tarumi, Shinjiroh Hara Junichi Motohisa and Takashi Fukui: “Fabrication of InP and InGaAs Air-Hole Type Two-Dimensional Photonic Crystals by Selective Area MOVPE”, Extended Abstracts of the 2005 International・・・
    2005年 [査読無し][通常論文]
     
    Shinji Hashimoto, Junichiro Takeda, Akihiro Tarumi, Shinjiroh Hara Junichi Motohisa and Takashi Fukui: “Fabrication of InP and InGaAs Air-Hole Type Two-Dimensional Photonic Crystals by Selective Area MOVPE”, Extended Abstracts of the 2005 International Conference on Solid State Device and Materials (SSDM2005), Kobe, Japan, pp. 762-763 (2005)*
  • Growth and Characterization of InGaAs Nanowires by Selective Area MOVPE
    304 -305 2005年 [査読無し][通常論文]
  • 応用物理 Vol. 67 (No. 7) 776 -786 1998年 [査読無し][招待有り]
  • Oyo Butsuri Vol. 67 (No. 7) 776 -786 1998年 [査読無し][通常論文]
  • T FUKUI, J ISHIZAKI, S HARA, J MOTOHISA, H HASEGAWA JOURNAL OF CRYSTAL GROWTH 146 (1-4) 183 -187 1995年01月 [査読無し][通常論文]
     
    The multiatomic steps formed on GaAs vicinal surfaces by metalorganic vapor phase epitaxy (MOVPE) are by atomic force microscopy (AFM). An AFM image of an epitaxially grown GaAs surface showed coherent multiatomic steps with extremely straight edges over a wide area. The average height and spacing of the multiatomic steps are 1.2-8 and 30-110 nm, respectively. These terrace widths change with the growth conditions. Narrower terrace widths are obtained at higher growth rates, and under higher AsH3 partial pressures and higher impurity doping conditions. The results suggest that the migration distance of a Ga atom on the terrace and the sticking coefficient at the step sites depend on these growth conditions. Using multiatomic steps, GaAs/AlGaAs quantum well wires (QWWs) were grown on a GaAs vicinal surface. Cross-sectional transmission electron microscopy and photoluminescence show the successful fabrication of QWWs.

特許

受賞

  • 2013年06月 EM-NANO2013組織委員会, Best Poster Award (共同受賞), The 4th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies,
     Selective-Area Growth of MnAs Nanoclusters for New Planar Magnetoelectronic Devices 
    受賞者: M. Fischer;S. Sakita;M. T. Elm;P. J. Klar;S. Hara
  • 2013年04月 公益社団法人 応用物理学会, Poster Award (共同受賞), 第60回応用物理学会春季学術講演会,
     InGaAsナノワイヤの選択成長におけるV/III比の影響 
    受賞者: 小橋 義典;原 真二郎;本久 順一
  • 2004年08月 日本結晶成長学会 第34回結晶成長国内会議講演奨励賞
     有機金属気相選択成長法によるGaInAs/GaAsナノワイヤの結晶成長と光学的評価 
    受賞者: 原 真二郎

共同研究・競争的資金等の研究課題

  • 論文内の記述と各種科学技術DBを連携させる特定研究グループ向け論文DBの研究
    文部科学省:科学研究費補助金(挑戦的研究(萌芽))
    研究期間 : 2021年04月 -2023年03月 
    代表者 : 吉岡 真治
  • 磁区制御した強磁性CoFe電極による半導体InAsナノワイヤスピントランジスタの研究
    公益財団法人 村田学術振興財団:第35回(平成31年度)研究助成
    研究期間 : 2019年10月 -2021年09月 
    代表者 : 原 真二郎
  • 専門用語の知識保全エコシステムを有する特定研究グループ向け論文・図表DBの研究
    文部科学省:科学研究費補助金(挑戦的研究(萌芽))
    研究期間 : 2019年04月 -2021年03月 
    代表者 : 吉岡 真治
  • シリコン上の縦型ナノワイヤスピントランジスタのボトムアップ集積
    文部科学省:科学研究費補助金(基盤研究(B))
    研究期間 : 2017年04月 -2020年03月 
    代表者 : 原 真二郎
  • 半導体ナノワイヤによるSi基板上発光デバイスの研究
    文部科学省:科学研究費補助金(基盤研究(B))
    研究期間 : 2017年04月 -2020年03月 
    代表者 : 本久 順一
  • シリコン上の縦型ナノワイヤスピンLEDのボトムアップ作製
    文部科学省:科学研究費補助金(挑戦的萌芽研究)
    研究期間 : 2016年04月 -2019年03月 
    代表者 : 原 真二郎
  • 新奇縦型ナノワイヤスピントランジスタの磁気輸送特性制御技術の研究
    公益財団法人 平和中島財団:2016(平成28)年度 国際学術共同研究助成
    研究期間 : 2016年04月 -2017年03月 
    代表者 : 原 真二郎
  • 文部科学省:科学研究費補助金(挑戦的萌芽研究)
    研究期間 : 2014年04月 -2016年03月 
    代表者 : 吉岡 真治
  • ボトムアップ選択形成による新奇ナノワイヤ磁気エレクトロニクス素子の研究
    独立行政法人 日本学術振興会:平成26年度 二国間交流事業 共同研究
    研究期間 : 2014年04月 -2016年03月 
    代表者 : 原 真二郎
  • 文部科学省:科学研究費補助金(挑戦的萌芽研究)
    研究期間 : 2013年04月 -2016年03月 
    代表者 : 原 真二郎
  • 文部科学省:科学研究費補助金(基盤研究(B))
    研究期間 : 2011年04月 -2014年03月 
    代表者 : 原 真二郎
  • 強磁性体ナノクラスタ列による磁気メモリ/論理素子のボトムアップ形成
    公益財団法人 住友電工グループ社会貢献基金:2012年度学術・研究助成
    研究期間 : 2012年10月 -2013年09月 
    代表者 : 原 真二郎
  • ナノ知識探索:実験記録からの知識発見
    国立大学法人 北海道大学:平成24年度大学院情報科学研究科 若手研究費 (重点配分経費)
    研究期間 : 2012年07月 -2013年03月 
    代表者 : 吉岡 真治
  • 有機金属気相選択成長法によるMnAsナノクラスタ配列構造の作製
    独立行政法人 日本学術振興会:外国人特別研究員(欧米短期)事業 (外国人研究員: Martin Fischer, PE 12531)
    研究期間 : 2013年 -2013年 
    代表者 : 原 真二郎
  • 半導体ナノワイヤ磁気センサーのボトムアップ形成に関する研究
    公益財団法人 村田学術振興財団:第27回(平成23年度)研究助成
    研究期間 : 2011年10月 -2012年09月 
    代表者 : 原 真二郎
  • 半導体ナノワイヤを用いた高効率太陽電池に関する研究
    公益財団法人 岩谷直治記念財団:第37回(平成22年度)岩谷科学技術研究助成
    研究期間 : 2011年04月 -2012年03月 
    代表者 : 本久 順一
  • 強磁性体MnAsナノクラスタによる磁気ナノエレクトロニクス素子の研究
    独立行政法人 日本学術振興会:平成24年度JSPSサマープログラム (外国人研究員: Martin Fischer, SP 12303)
    研究期間 : 2012年 -2012年 
    代表者 : 原 真二郎
  • 基本論理素子に向けたナノスピンバルブ構造の選択形成
    独立行政法人 科学技術振興機構:戦略的創造研究推進事業 個人研究型 (さきがけタイプ) 研究領域「ナノ製造技術の探索と展開」
    研究期間 : 2007年10月 -2011年03月 
    代表者 : 原 真二郎
  • 文部科学省:科学研究費補助金(特別推進研究)
    研究期間 : 2006年04月 -2011年03月 
    代表者 : 福井 孝志, 雨宮 好仁, 本久 順一, 葛西 誠也, 原 真二郎
     
    電子線描画法による微細パターン形成技術と有機金属気相成長法とを組み合わせて、化合物半導体ナノワイヤの選択成長技術を確立した。成長したガリウムヒ素、インジウムリン等の半導体ナノワイヤは、その結晶形態を電子顕微鏡で解析、光学特性をフォトルミネッセンスで解明すると共に、トランジスタ構造を作製して電気伝導特性の解析と評価、異種接合やp-n接合を作製してレーザ、発光ダイオード、太陽電池素子としての動作原理を確認する等、次世代ナノエレクトロニクスへの応用展開の可能性を見出した。
  • 文部科学省:科学研究費補助金(若手研究(A))
    研究期間 : 2006年04月 -2009年03月 
    代表者 : 原 真二郎, クラー ピーター, クルーク・フォン・ニーダ, ハンス-アルプレヒ
     
    位置およびサイズを精密に制御して、強磁性体ナノ構造を半導体ウェハ上に作製する「選択形成技術」を初めて開発した。強磁性体ナノ構造の結晶成長条件(温度・原料ガス供給比等)依存性を明らかにして、ナノ構造の成長方向制御を実現すると共に、磁気物性評価と合わせてナノ構造の磁化方向制御技術を確立した。また原子レベルで急峻・平坦な強磁性体/半導体界面・表面を持つナノ構造を作製し、コアとなる化合物半導体ナノワイヤの組成制御を実現した。
  • 化合物半導体上に配列制御した強磁性体ナノ構造からなる新しい磁気抵抗素子研究
    独立行政法人 日本学術振興会:外国人特別研究員(欧米短期)事業 (外国人研究員: Matthias Thomas Elm, PE 08573)
    研究期間 : 2008年 -2008年 
    代表者 : 原 真二郎
  • ヘテロ接合半導体ナノワイヤの形成と微小光素子応用
    公益財団法人 北海道科学技術総合振興センター:研究開発助成事業 基盤的研究開発育成事業 共同研究補助金
    研究期間 : 2006年04月 -2007年03月 
    代表者 : 本久 順一
  • 文部科学省:科学研究費補助金(基盤研究(B))
    研究期間 : 2006年04月 -2007年03月 
    代表者 : 福井 孝志, 本久 順一, 原 真二郎
     
    有機金属気相(MOVPE)選択成長技術とナノ構造の自然形成技術の組み合わせにより作製した量子ドット構造を用いた「単一電子メモリ」の実現を目的とし、本年度は、これまで作製を行ってきた、GaAs細線とInAs量子ドット構造を有する量子ドットメモリのトランスファ特性において生じるヒステリシスについて、その機構に関する詳細な評価・検討を行った。今回、電流ICTS法と呼ばれる評価手法を用い、トラップの準位、及び捕獲断面積を評価し、ヒステリシス機構について検討した。評価にはMOVPE選択成長技術を用いて作製した、InAs量子ドットを有する細線FET構造を用いた。電流ICTS法とは、Vdsを一定に保つと同時に、ゲート電極にパルス的に電圧を印加することでIdsに生じるトランジェントから、活性化エネルギ、捕獲断面積、及びトラップの密度を評価する手法である。得られたICTS信号(t・dI/dt)の温度依存性曲線では、ピークの位置が時定数を示す。温度低下に伴いピークが長時間側にシフトする傾向が確認された。時定数のアレニウスプロットにより、今回の測定結果からは典型的に2つの活性化エネルギを見積もることができ、それぞれ0.33eV、0.18evである。またそれらの捕獲断面積は1.6×10^<-15> cm^2、3.8×10^<-19> cm^2であった。捕獲断面積のオーダを考慮するとこれらの準位は量子...
  • 文部科学省:科学研究費補助金(萌芽研究)
    研究期間 : 2005年04月 -2007年03月 
    代表者 : 原 真二郎, 福井 孝志, 本久 順一
     
    化合物半導体への強磁性MnAsナノ構造のエピタキシャル成長技術確立を目的とし、本年度は主にプレーナGalnAs{111}面上の有機金属気相成長に関して、結晶面方位依存性や、供給ガス比率(V/Mn比)・成長時間等の成長条件依存性を評価し、ナノクラスタ形成制御の観点から詳細なデータ取得を行った。これまで断面格子像観察・電子線回折による構造評価及び、磁気異方性評価から.、(111)B面上のMnAs成長では、六方晶のNiAs型MnAsナノクラスタが立方晶の閃亜鉛鉱型GaInAs表面に形成され、MnAsのc軸がGalnAsの[111]B方向と平行であるとの知見を得た。今回矩形ナノクラスタが形成される(001)面上及び、よりサイズの小さい六角形ナノクラスタが高密度に形成される(111)A面上で詳細な構造評価を行った結果、いずれの結晶面方位においてもNiAs型ナノクラスタが形成するものの、(111)B面上とは異なりナノクラスタの結晶軸が下地GaInAsの[111]方向から僅かに傾く、あるいはばらつきを持つ傾向にあった。これはV族(As)原子に覆われた(111)B表面と異なり、特に完全なIII族面である(111)A面では、 GaInAs層に埋め込まれたMnAsナノクラスタが形成されやすいことに起因すると考えられる。ただ(111)A面上においてもV/Mn比を60から1125と大幅に増加させるこ...
  • 文部科学省:科学研究費補助金(萌芽研究)
    研究期間 : 2005年04月 -2007年03月 
    代表者 : 本久 順一, 福井 孝志, 原 真二郎
     
    平成18年度は前年度の成果を基盤として、有機金属気相選択成長法により作製されたナノワイヤの光学特性評価を目的として、以下のような研究を行った。まず、InGaAs/GaAsナノワイヤに対し、顕微フォトルミネセンス(PL)法によりその発光特性の評価を行った。特に光学測定系の改善により、空間分解能約1μm程度でナノワイヤからの発光の空間像をを観察したところ、ナノワイヤ内部に局在するInGaAs層から実際に発光していることが明確に示された。また、同様の空間像から、直径約200nm、長さ2.6μm程度のナノワイヤにおいて、その両端から強い発光が得られていることが確認された。これはナノワイヤ内部で発生した光がナノワイヤに添って伝搬している、すなわちナノワイヤが光導波路として機能しているためであると考えられ、微小光素子や高効率の単一格子光源応用に向けての重要な知見を得た。次に、InPナノワイヤに対し、顕微PLおよびラマン散乱測定により評価を行った。その結果、 InPナノワイヤでは平均的に10^<17>cm^<-3>程度あるいはそれ以下の電子がバックグラウンドに存在していることが確認された。そしてこれらのナノワイヤのうち、発光効率が高く不純物密度が少ないと考えられる単一のナノワイヤを詳細に評価した結果、ウルツ鉱形構造を有するInPナノワイヤではそのバンドギャップエネルギーカミ約1.50eVで...
  • 有機金属気相成長高密度量子ナノ構造による単電子集積エレクトロニクス
    文部科学省:科学研究費補助金(学術創成研究費)
    研究期間 : 2005年04月 -2006年03月 
    代表者 : 福井 孝志
  • 有機金属気相成長法による原子ステップを用いた量子細線の研究
    独立行政法人 日本学術振興会:科学研究費補助金 特別研究員奨励費 (DC1)
    研究期間 : 1995年04月 -1998年03月 
    代表者 : 原 真二郎

教育活動情報

主要な担当授業

  • 電子材料学特論
    開講年度 : 2021年
    課程区分 : 修士課程
    開講学部 : 情報科学研究科
    キーワード : エレクトロニクスと電子材料, 結晶構造と結晶物理, 電子材料の評価技術, 基幹半導体材料, 異種半導体接合材料, 誘電体および磁性材料, 酸化物半導体, 結晶成長法
  • 電子材料学特論
    開講年度 : 2021年
    課程区分 : 修士課程
    開講学部 : 情報科学院
    キーワード : エレクトロニクスと電子材料, 結晶構造と結晶物理, 電子材料の評価技術, 基幹半導体材料, 異種半導体接合材料, 誘電体および磁性材料, 酸化物半導体, 結晶成長法
  • 電子材料学特論
    開講年度 : 2021年
    課程区分 : 博士後期課程
    開講学部 : 情報科学研究科
    キーワード : エレクトロニクスと電子材料, 結晶構造と結晶物理, 電子材料の評価技術, 基幹半導体材料, 異種半導体接合材料, 誘電体および磁性材料, 酸化物半導体, 結晶成長法
  • 電子材料学特論
    開講年度 : 2021年
    課程区分 : 博士後期課程
    開講学部 : 情報科学院
    キーワード : エレクトロニクスと電子材料, 結晶構造と結晶物理, 電子材料の評価技術, 基幹半導体材料, 異種半導体接合材料, 誘電体および磁性材料, 酸化物半導体, 結晶成長法
  • 電気電子工学実験Ⅰ
    開講年度 : 2021年
    課程区分 : 学士課程
    開講学部 : 工学部
    キーワード : バイポーラトランジスタ,増幅回路,MOSFET,CMOS,演算増幅器,論理回路,順序回路,ディジタル回路
  • 電気電子工学実験Ⅱ
    開講年度 : 2021年
    課程区分 : 学士課程
    開講学部 : 工学部
    キーワード : 偏光,旋光,回折,屈折,結晶構造,X線回折,半導体物性,ホール効果,電気磁気エネルギー,電力
  • 電気電子工学実験Ⅲ
    開講年度 : 2021年
    課程区分 : 学士課程
    開講学部 : 工学部
    キーワード : 半導体プロセス,MOSFET,集積回路特性評価,SPICE,回路シミュレーション,アセンブリ言語
  • 電子回路
    開講年度 : 2021年
    課程区分 : 学士課程
    開講学部 : 工学部
    キーワード : 半導体、増幅回路、帰還回路、発振回路、演算増幅器、センサ回路

大学運営

委員歴

  • 2022年 - 現在   公益社団法人 応用物理学会   JJAP特集号編集委員会(MNC)特集号責任編集委員
  • 2022年 - 現在   公益社団法人 応用物理学会   第35回マイクロプロセスナノテクノロジ国際会議 論文委員
  • 2021年04月 - 現在   公益社団法人 応用物理学会   論文誌企画・編集委員会 APEX/JJAP編集委員
  • 2021年 - 現在   公益社団法人 応用物理学会   2022年国際固体素子・材料コンファレンス サブコミッティ・チェア (Area 8)
  • 2020年02月 - 現在   公益社団法人 応用物理学会   第59-62期代議員
  • 2021年 - 2021年   公益財団法人 応用物理学会   第34回マイクロプロセスナノテクノロジ国際会議 論文委員
  • 2020年 - 2021年   公益社団法人 応用物理学会   2021年国際固体素子・材料コンファレンス サブコミッティ・チェア (Area 8)
  • 2018年 - 2021年   公益社団法人 応用物理学会   JJAP特集号編集委員会(SSDM)特集号編集委員・Area統括編集委員
  • 2020年 - 2020年   公益財団法人 応用物理学会   第33回マイクロプロセスナノテクノロジ国際会議 論文委員
  • 2019年 - 2020年   公益社団法人 応用物理学会   2020年国際固体素子・材料コンファレンス サブコミッティ・バイスチェア (Area 8)
  • 2019年 - 2019年   公益社団法人 応用物理学会   第32回マイクロプロセスナノテクノロジ国際会議 論文委員
  • 2018年 - 2019年   公益社団法人 応用物理学会   2019年国際固体素子・材料コンファレンス サブコミッティ・バイスチェア (Area 8)
  • 2018年 - 2019年   CSW2019   2019年化合物半導体に関する国際会議週間 論文委員
  • 2018年 - 2018年   公益社団法人 応用物理学会   第31回マイクロプロセスナノテクノロジ国際会議 論文委員
  • 2018年 - 2018年   公益社団法人 応用物理学会   第65回応用物理学会春季学術講演会 シンポジウム組織委員
  • 2018年 - 2018年   公益社団法人 応用物理学会   第65回応用物理学会春季学術講演会 プログラム編集委員
  • 2017年 - 2018年   公益社団法人 応用物理学会   2018年国際固体素子・材料コンファレンス 論文委員
  • 2016年 - 2018年   ICMOVPE-XIX   第19回(2018年)有機金属気相成長に関する国際会議 論文委員
  • 2017年 - 2017年   公益財団法人 応用物理学会   第30回マイクロプロセスナノテクノロジ国際会議 論文委員
  • 2017年 - 2017年   公益社団法人 応用物理学会   第78回応用物理学会秋季学術講演会 プログラム編集委員
  • 2017年 - 2017年   公益社団法人 応用物理学会   第64回応用物理学会春季学術講演会 プログラム編集委員
  • 2016年 - 2017年   公益社団法人 応用物理学会 2017年国際固体素子・材料コンファレンス   論文委員
  • 2016年 - 2016年   公益社団法人 応用物理学会   第77回応用物理学会秋季学術講演会 プログラム編集委員
  • 2016年 - 2016年   公益社団法人 応用物理学会   第29回マイクロプロセスナノテクノロジ国際会議 論文委員
  • 2016年 - 2016年   公益社団法人 応用物理学会   第63回応用物理学会春季学術講演会 プログラム編集委員
  • 2015年 - 2016年   公益社団法人 応用物理学会   2016年国際固体素子・材料コンファレンス 論文委員
  • 2015年 - 2016年   CSW2016   第28回インジウム燐及び関連材料に関する国際会議 論文委員
  • 2011年 - 2016年   公益社団法人 応用物理学会   ナノワイヤ研究グループ 幹事   公益社団法人応用物理学会
  • 2015年 - 2015年   公益社団法人 応用物理学会   第62回応用物理学会春季学術講演会 プログラム編集委員
  • 2015年 - 2015年   公益社団法人 応用物理学会   第76回応用物理学会秋季学術講演会 プログラム編集委員
  • 2015年 - 2015年   公益社団法人 応用物理学会   第28回マイクロプロセスナノテクノロジ国際会議 論文委員
  • 2014年 - 2015年   公益社団法人 応用物理学会   2015年国際固体素子・材料コンファレンス 論文委員
  • 2014年 - 2015年   公益社団法人 応用物理学会   2015年国際固体素子・材料コンファレンス 実行委員長
  • 2014年 - 2015年   公益社団法人 応用物理学会   講演会企画運営委員会 委員
  • 2013年 - 2015年   公益社団法人 日本化学会   2015年環太平洋国際化学会議 シンポジウム組織委員
  • 2014年 - 2014年   公益社団法人 応用物理学会   第75回応用物理学会秋季学術講演会 プログラム編集委員
  • 2014年 - 2014年   公益社団法人 応用物理学会   第61回応用物理学会春季学術講演会 シンポジウム組織委員
  • 2014年 - 2014年   公益社団法人 応用物理学会   第61回応用物理学会春季学術講演会 プログラム編集委員
  • 2013年 - 2014年   公益社団法人 応用物理学会   第75回応用物理学会秋季学術講演会 実行総務代表
  • 2013年 - 2014年   公益社団法人 応用物理学会   2014年国際固体素子・材料コンファレンス サブコミッティ・チェア (Area 13)
  • 2013年 - 2014年   公益社団法人 応用物理学会   2014年国際固体素子・材料コンファレンス 実行副委員長
  • 2013年 - 2013年   公益社団法人 応用物理学会   第74回応用物理学会秋季学術講演会 プログラム編集委員
  • 2013年 - 2013年   2013年結晶成長に関する共同国際会議(3CG) 国際組織委員
  • 2012年 - 2013年   公益社団法人 日本磁気学会   第37回日本磁気学会学術講演会 実行委員
  • 2012年 - 2013年   公益社団法人 応用物理学会   第26回マイクロプロセスナノテクノロジ国際会議 実行委員
  • 2012年 - 2013年   公益社団法人 応用物理学会   2013年国際固体素子・材料コンファレンス 論文委員会 サブコミッティ・バイスチェア (Area13)
  • 2012年 - 2013年   公益社団法人 応用物理学会   第60回応用物理学会春季学術講演会 プログラム編集委員
  • 2012年 - 2013年   公益社団法人 応用物理学会   JJAP特集号編集委員会(SSDM)特集号編集委員
  • 2012年 - 2012年   2012年結晶成長に関する共同国際会議(3CG) 国際組織委員
  • 2011年 - 2012年   公益社団法人 応用物理学会   第59回応用物理学関係連合講演会 シンポジウム企画世話人
  • 2011年 - 2012年   公益社団法人 応用物理学会   2012年国際固体素子・材料コンファレンス 論文委員会 サブコミッティ・バイスチェア (Area13)   公益社団法人応用物理学会
  • 2011年 - 2012年   公益社団法人 応用物理学会   2012年国際固体素子・材料コンファレンス 論文総務   公益社団法人応用物理学会
  • 2009年 - 2012年   公益社団法人 応用物理学会   公益社団法人応用物理学会北海道支部役員会 庶務幹事   公益社団法人応用物理学会
  • 2010年 - 2011年   公益社団法人 応用物理学会   2011年国際固体素子・材料コンファレンス 論文総務   公益社団法人応用物理学会
  • 2009年 - 2010年   公益社団法人 応用物理学会   2010年国際固体素子・材料コンファレンス 論文総務   公益社団法人応用物理学会
  • 2008年 - 2009年   公益社団法人 応用物理学会   第22回マイクロプロセスナノテクノロジ国際会議 実行委員   公益社団法人応用物理学会
  • 2006年 - 2007年   日本結晶成長学会   第37回結晶成長国内会議 実行委員   日本結晶成長学会
  • 2005年 - 2007年   公益社団法人 応用物理学会   第26回電子材料シンポジウム(EMS26)実行委員   公益社団法人応用物理学会
  • 2004年 - 2006年   公益社団法人 応用物理学会   第25回電子材料シンポジウム(EMS25)実行委員   公益社団法人応用物理学会
  • 1999年 - 2000年   第10回有機金属気相成長に関する国際会議 実行委員


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