研究者データベース

有田 正志(アリタ マサシ)
情報科学研究院 情報エレクトロニクス部門 先端エレクトロニクス分野
准教授

基本情報

所属

  • 情報科学研究院 情報エレクトロニクス部門 先端エレクトロニクス分野

職名

  • 准教授

学位

  • 理学博士(チューリッヒ工科大学(スイス連邦))

ホームページURL

J-Global ID

研究キーワード

  • 磁性   電子顕微鏡   ナノ電気物性   Nano Science of Materials   

研究分野

  • ナノテク・材料 / 金属材料物性
  • ナノテク・材料 / 結晶工学
  • ナノテク・材料 / 応用物性
  • ものづくり技術(機械・電気電子・化学工学) / 電気電子材料工学

学歴

  •         - 1987年   スイス連邦チューリッヒ工科大学   数物科学研究科   数学物理
  •         - 1985年   大阪大学   基礎工学研究科
  •         - 1985年   大阪大学
  •         - 1980年   広島大学   理学部   物性学科
  •         - 1980年   広島大学

所属学協会

  • 日本顕微鏡学会   日本磁気学会   応用物理学会   日本金属学会   

研究活動情報

論文

  • In-situ TEM observation of Cu-WOx CBRAM during gradual resistance decrease fot initialization
    S. Muto, S. Sakai, A. Tsurumaki-Fukuchi, M. Arita, Y. Takahashi
    Proc. 32nd Internat. Microprocesses and Nanotechnology Conference 3C101-1 - 3C101-2 2019年10月 [査読有り][通常論文]
  • Failure and Recovery of Double-Layer CBRAM Studied by In-Situ TEM
    M. Arita, R. Ishikawa, K. Arima, A. Tsurumaki-Fukuchi, Y. Takahashi, M. Kudo, S. Matsumura
    Extended Abstract of the 2019 Internat. Conf. Sol. Stat. Dev. Materials 703 - 704 2019年09月 [査読有り][通常論文]
  • Nanofilaments in Ta-O ReRAM Bit Array Fabricated Using 40 nm CMOS Process
    M. Arita, A. Tsurumaki-Fukuchi, Y. Takahashi, S. Muraoka, S. Ito, S. Yoneda
    Extended Abstract of the 2019 Internat. Conf. Sol. Stat. Dev. Materials 349 - 350 2019年09月 [査読有り][通常論文]
  • Switching Current of Ta2O5 Based Resistive Analog Memories
    Y. Li, A. Tsurumaki‐Fukuchi, M. Arita, Y. Takahashi, T. Morie
    Proc. 2019 Silicon Nanoelectronics Workshop 2019年06月 [査読有り][通常論文]
  • Fast and uniform interface reactions of tantalum oxide and their applications into memory devices
    A. Tsurumaki-Fukuchi, M. Arita, Y. Takahashi
    Abst. Collaborative Conference on Materials Research 2019 55 - 57 2019年06月 [査読無し][通常論文]
  • In-situ TEM of CBRAM at initial decrease in resistance
    S. Muto, S. Sakai, A. Tsurumaki-Fukuchi, M. Arita, Y. Takahashi
    AMTC Letters 6 96 - 97 2019年06月 [査読有り][通常論文]
  • Nanoscale filaments in Ta-O resistive RAM bit array: microscopy analysis and switching property
    M. Arita, A. Tsurumaki-Fukuchi, Y. Takahashi, S. Muraoka, S. Ito, S. Yoneda
    Proc. 2019 IEEE 11th International Memory Workshop 116 - 119 2019年05月 [査読有り][通常論文]
  • 李遠霖, 福地厚, 有田正志, 高橋庸夫, 森江隆
    信学技報 119 34 29 - 34 2019年05月 [査読無し][通常論文]
  • A. Tsurumaki-Fukuchi, Y. Tsuta, M. Arita, Y. Takahashi
    physica status solidi (RRL) 13 7 1900136-1 - 1900136-5 2019年04月 [査読有り][通常論文]
  • Study on Interfacial Redox Reactions of Tantalum as a Good Scavenger Material in ReRAM Devices
    A. Tsurumaki‐Fukuchi, M. Arita, Y. Takahashi
    Extended Abstract of the 2018 Internat. Conf. Sol. Stat. Dev. Materials 95 - 96 2018年09月 [査読有り][通常論文]
  • Investigation for Multilevel Memory Capability of ReRAM using Ta2O5-δ Insulator
    Y. Li, R. Katsumura, M. K. Grönroos, A. Tsurumaki‐Fukuchi, M. Arita, H. Andoh, T. Morie, Y. Takahashi
    Proc. 2018 Silicon Nanoelectronics Workshop 2018年06月 [査読有り][通常論文]
  • In-situ electron microscopy to investigate resistive RAM operations
    M. Arita, A. Tsurumaki-Fukuchi, Y. Takahashi
    Abst. Collaborative Conference on Materials Research 2018 23 - 24 2018年06月 [査読有り][通常論文]
  • Oxygen distribution around filament in Ta-O resistive RAM fabricated using 40 nm CMOS technology
    M. Arita, A. Tsurumaki-Fukuchi, Y. Takahashi, Z. Wei, S. Muraoka, S. Ito, S. Yoneda
    Proc. 2018 IEEE 10th International Memory Workshop 106 - 109 2018年05月 [査読有り][通常論文]
  • Nanoscale Switching and Degradation of Resistive Random Access Memory Studied by In Situ Electron Microscopy
    M. Arita, A. Tsurumaki-Fukuchi, Y. Takahashi
    Memristor and Memristive Neural Networks, A. James (Ed.) 63 - 91 2018年04月 [査読有り][通常論文]
  • 単層Fe-MgF2グラニュラー薄膜を用いた単電子トランジスタの電気特性
    浅井佑基, 本庄周作, 瘧師貴幸, 福地 厚, 有田正志, 高橋庸夫
    信学技報 1 453(ED2017-104) 1 - 6 2018年02月 [査読無し][通常論文]
  • Smooth Interfacial Scavenging for Resistive Switching Oxide via the Formation of Highly Uniform Layers of Amorphous TaOx
    A. Tsurumaki-Fukuchi, R. Nakagawa, M. Arita, Y. Takahashi
    ACS Applied Materials and Interfaces 10 6 5609 - 5617 2018年01月 [査読有り][通常論文]
  • EELS Analysis of Oxygen Scavenging Effect in a Resistive Switching Structure of Pt/Ta/SrTiO3/Pt
    A. Tsurumaki-Fukuchi, R. Nakagawa, M. Arita, Y. Takahashi
    MRS Advances 1 - 6 2018年01月 [査読有り][通常論文]
  • ReRAM Switching in Planar-Type Structures of Ag/WOx/Pt Studied by in-Situ TEM
    S. Sakai, S. Muto, A. Tsurumaki-Fukuchi, M. Arita, Y. Takahashi
    Proc. 29th Internat. Microprocesses and Nanotechno. Conf. (MNC 2017) (7A-3-1)1 - 2 2017年11月 [査読有り][通常論文]
  • Single Electron Transistor Characteristics of Fe-MgF2 Single-Layer Granular Films
    Y. Asai, S. Honjo, A. Tsurumaki-Fukuchi, M. Arita, Y. Takahashi
    , Proc. 29th Internat. Microprocesses and Nanotechno. Conf. (MNC 2017) (7A-2-3)-1 - 2 2017年11月 [査読有り][通常論文]
  • Realization of Analog Memory Using Ta2O5 Based ReRAM for the Application of Neural Network
    Y. Li, R. Katsumura, M. K. Gronroos, A. Tsurumaki-Fukuchi, M. Arita, H. Andoh, T. Morie, Y. Takahashi, S. Samukawa
    Proc. 14th International Conference on Flow Dynamics (ICFD2017) (CRF-25)1 - 2 2017年11月 [査読有り][通常論文]
  • Evaluation of Coupled Triple Quantum Dots with Compact Device Structure
    Y. Takahashi, T. Uchida, A. Tsurumaki-Fukuchi, M. Arita, A. Fujiwara
    ECS Transactions 80 4 173 - 180 2017年10月 [査読有り][招待有り]
  • Mika Laiho, Mika Grconroos, Jussi H. Poikonen, Eero Lehtonen, Reon Katsumura, Atsushi T. Fukuchi, Masashi Arita, Yasuo Takahashi
    Proceedings - IEEE International Symposium on Circuits and Systems 29 - 30 2017年09月25日 [査読有り][通常論文]
     
    In this paper we consider using memristors for high-dimensional computing that requires very large associative memories, but generally has good tolerance to nonidealities in the implementation medium. To consider such computing with existing devices, we present measurements of a tantalum oxide memristor that can be programmed to resistance values between high resistance state and low resistance state. Based on the measurements, we estimate the variation in the resistance states, and describe how a pseudo-analog programming operation can be used for trimming ON-resistance values. Finally, we discuss how different memory initialization and programming approaches affect the reliability of an associative search.
  • In-situ Observation of Cu Residuals in Resistance Switching Failure of MoOx/Al2O3 CBRAM
    M. Arita, R. Ishikawa, S. Hirata, A. Turumaki-Fukuchi, Y. Takahashi
    Extended Abstract of the 2017 Internat. Conf. Sol. Stat. Dev. Materials 39 - 40 2017年09月 [査読有り][通常論文]
  • RRAM Device Operation Investigated using In-situ TEM
    M. Arita, A. Tsurumaki-Fukuchi, Y. Takahashi
    Proc. Non-Volatile Memory Technology Symposium 2017 (NVMTS2017) 34 - 35 2017年08月 [査読有り][招待有り]
  • Y. Li, R. Katsumura, M. K. Grönroos, A. Tsurumaki‐Fukuchi, M. Arita, H. Andoh, T. Morie, Y. Takahashi
    Proc. 2017 Silicon Nanoelectronics Workshop (SNW 2017) 85 - 86 2017年06月 [査読有り][通常論文]
  • 電子デバイスの透過電子顕微鏡オペランド解析と応用―電子観顕微鏡によるその場察―
    高橋庸夫, 有田 正志
    応用物理学会薄膜・表面物理分科会 NEWS LETTER 158 45 - 53 2017年04月 [査読無し][通常論文]
  • Microstructural Evolution during Switching Operation of Resistive RAM
    M. Arita, A. Tsurumaki-Fukuchi, Y. Takahashi
    Proc. BIT's 5th Annual Conference of AnalytiX-2017 240  2017年03月 [査読無し][通常論文]
  • 内田 貴史, 福地 厚, 有田 正志, 藤原 聡, 高橋 庸夫
    電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 116 471 1 - 6 電子情報通信学会 2017年02月24日 [査読無し][通常論文]
  • Y. Yang, Y. Takahashi, A. Tsurumaki-Fukuchi, M. Arita, M. Moors, M. Buckwell, A. Mehonic, A. Kenyon
    Journal of Electroceramics 1 - 21 2017年02月 [査読有り][通常論文]
  • R. Ishikawa, S. Hirata, A. Tsurumaki-Fukuchi, M. Arita, Y. Takahashi, M. Kudo, S. Matsumura
    ECS Transactions 80 10 903 - 910 2017年 [査読有り][通常論文]
     
    In-situ TEM (transmission electron microscopy) was applied to Cu/MoOx/Al2O3 bilayer CBRAM and the change of the Cu microstructure were observed during cyclic Set/Reset switching. In the Set process giving the low resistance state (LRS), a dark contrast appeared in Al2O3 layer, and in the Reset process giving the high resistance state (HRS), it almost disappeared. This result means that the resistance changed by formation and rupture of the conducting filament. In our MoOx/Al2O3 CBRAMs, cyclic Set/Reset operations were achieved with the real-time TEM observations. During the cycles, device degradation, i.e., gradual decrease in the resistance in the cyclic operation was observed in the both HRS and LRS. We confirmed that the contrast of the Cu layer and the Al2O3 layer had changed while the device degraded.
  • S. Muto, R. Yonesaka, A. Tsurumaki-Fukuchi, M. Arita, Y. Takahashi
    ECS Transactions 80 10 895 - 902 2017年 [査読有り][通常論文]
     
    We observed a conductive filament in CBRAM (conductive bridging RAM) during switching operations by in-situ TEM (transmission electron microscopy) method. A vertically stacked-type CBRAM is popular for TEM observation, however, we used a lateral-type CBRAM (Cu-WOX-Cu CBRAM) for clearer TEM observations. In a Set operation (resistive switching from the high resistance state (HRS) to the low resistance state (LRS)), a conductive filament grew from a cathode to an anode and increase of Cu in the cathode was observed. After the Set operation, a Reset operation (resistive switching from LRS to HRS) was observed in the opposite voltage polarity to the former Set but big structural changes were not seen. The growth direction of Cu conductive filament and increase of Cu in the cathode after the Set can be explained by a proposed switching model of CBRAM (conductive filament model).
  • Masashi Arita, Yasuo Takahashi
    3RD INTERNATIONAL MULTIDISCIPLINARY MICROSCOPY AND MICROANALYSIS CONGRESS (INTERM) 186 205 - 214 2017年 [査読有り][通常論文]
     
    Our recent works on resistive RAMs (ReRAMs) are reviewed, where in-situ transmission electron microscopy (TEM) realizing simultaneous electric measurements and TEM observations was applied to investigate resistive switching operation of some conductive bridging RAMs (CBRAMs). In multiple switching cycles, the Cu conductive filament was experimentally confirmed to appear in the Set process giving the low resistance state (LRS, on-state) and to disappear in the Reset process giving the high resistance state (HRS, off-state). No drastic change in the geometry of the conductive filament was seen when the switching current was small. With increasing the current, the filament became thick, but its position was unstable, and too much Cu moved into the switching layer in a wide area. This may induce the device degradation and failure.
  • Takafumi Uchida, Mingyu Jo, Atsushi Tsurumaki-Fukuchi, Masashi Arita, Akira Fujiwara, Yasuo Takahashi
    JOURNAL OF APPLIED PHYSICS 120 23 234502  2016年12月 [査読有り][通常論文]
     
    We propose a simple method to evaluate the triple quantum dots (TQDs) coupled in series with the compact device structure. Compact coupled quantum dots, each with an attached control gate, offer promising applications as quantum computing and single-electron transfer devices. However, device reduction required in practical applications creates a capacitive cross-talk between a control gate and its neighboring dots making it difficult to determine the charge transition boundaries in each dot. To properly evaluate the electron-transfer characteristics of TQDs, a method is proposed whereby the three gate voltages are simultaneously swept. We studied the charge stability diagram of the compact TQDs using Monte Carlo simulations, and confirmed the effectiveness of the method. Compact Si-TQDs were actually fabricated by the use of pattern-dependent oxidation and additional oxidation method for this study. The method was then applied to the stability diagrams obtained from the devices. The nine measurements of the gate capacitances between the three sets of dots and gates were reproduced, confirming the formation of the TQDs. Published by AIP Publishing.
  • Fabrication of single-electron transistor made of Fe-dot film and its characteristics
    S. Honjo, T. Uchida, A. Tsurumaki-Fukuchi, M. Arita, Y. Takahashi
    Proc. MNC2016 (2016), 10P-7-30 -1 - 10P-7-30 -2 2016年11月08日 [査読有り][通常論文]
  • Analog memory operated by MOSFET and MoOx Resistive Random Access Memory
    M. Jo, R. Katsumura, A. T. Fukuchi, M. Arita, Y. Takahashi, H. Ando, T. Morie, S. Samukawa
    Proc. of 16th Int. Symp. on Advanced Fluid Information (AFI-2016) 58 - 59 2016年10月 [査読有り][通常論文]
  • Spike-based Neural Learning Hardware Using a Resistance Change Memory Device toward Brain-like Systems with Nanostructures
    H. Ando, K. Tomizaki, T. Tohara, T. Morie, A. T. Fukuchi, M. Arita, Y. Takahashi, S. Samukawa
    Proc. of 16th Int. Symp. on Advanced Fluid Information (AFI-2016) 64 - 65 2016年10月 [査読有り][通常論文]
  • Switching operation of double-layer conductive bridging RAM investigated using in-situ transmission electron microscopy
    M. Arita, S. Hirata, A. Takahashi, T. Hiroi, M. Jo, A. Tsurumaki-Fukuchi, Y. Takahashi
    Extended Abstract of the 2016 Internat. Conf. Sol. Stat. Dev. Materials(2016) 87 - 88 2016年09月26日 [査読有り][通常論文]
  • 高橋 庸夫, 工藤 昌輝, 有田 正志
    電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 116 3 21 - 26 電子情報通信学会 2016年04月14日 [査読無し][通常論文]
  • Si MOSFET上に作製したCu-MoOx-Al抵抗変化メモリを用いたSTDP制御回路とその評価
    富崎和正, 森江隆, 安藤秀幸, 福地厚, 有田正志, 高橋庸夫
    電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 115 514 7 - 12 2016年03月 [査読無し][通常論文]
  • Masashi Arita, Yuuki Ohno, Yasuo Takahashi
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 213 2 306 - 310 2016年02月 [査読無し][通常論文]
     
    For dynamical observation of CBRAM microstructure, in situ transmission electron microscopy (in situ TEM) was performed on Cu/MoOx/TiN during the resistive switching. It was confirmed that the local area near the MoOx/TiN interface contributes to resistive switching. The Cu deposit at the bottom of the MoOx layer swelled into the oxidized thin layer of the TiN bottom electrode, and a thin filament of 3-5nm diameter was formed in the Set process. The reversal change was seen in the Reset process. On increasing the switching power, a microstructural change in the MoOx layer was also seen, and the CBRAM film was finally destroyed.
  • R. Yonesaka, S. Muto, A. Tsurumaki-Fukuchi, M. Arita, Y. Takahashi
    2016 IEEE 16TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO) 790 - 791 2016年 [査読有り][通常論文]
     
    Lateral ReRAM (Resistive Random Access Memory) made of Cu/WOX/Cu was formed, and its operation was investigated in a transmission electron microscope (TEM) to elucidate the switching mechanism. Resistive switching behavior was realized in TEM. At the Set process changing the device state from high resistance state (HRS) to low resistance state (LRS), a Cu conductive filament grew up from the cathode. This filament was confirmed to be vanished at the reset process recovering HRS.
  • T. Uchida, M. Jo, A. Tsurumaki-Fukuchi, M. Arita, A. Fujiwara, Y. Takahashi
    2016 IEEE 16TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO) 119 - 122 2016年 [査読有り][通常論文]
     
    Series coupled triple quantum dots (TQDs) have been studied as an important element of quantum computers. It is needed to fabricate QD array connected in series with a compact structure to scale up the quantum bits. To develop quantum bits based on the TQDs, evaluation of the charge stability diagram is needed. However, since the center gate usually couples to all dots in the compact TQDs, it is difficult to achieve the charge stability diagram of TQDs by simply scanning the gate voltages. Here, we propose a simple method to achieve the stability diagram of TQDs. First, we check the stability diagram of the compact TQDs by the use of Monte Carlo simulations and succeed in developing a method to achieve the stability diagram by simultaneously sweeping of three gate voltages in the simulation. Then the method is applied to a silicon TQDs device fabricated by pattern-dependent oxidation. As the result, the formation of TQDs together with its stability diagram is confirmed.
  • Takafumi Uchida, Mingyu Jo, Hikaru Satoh, Atsushi Tsurumaki-Fukuchi, Masashi Arita, Akira Fujiwara, Yasuo Takahashi
    2016 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW) 178 - 179 2016年 [査読有り][通常論文]
     
    Single electron transistors (SETs) have attracted attention not only to the transistor function but also their interesting characteristics. We reported that the negative conductance appeared in Coulomb diamond characteristics of silicon based SETs made by pattern dependent oxidation. This is attributable to the excited states in the quantum dot. However, it is necessary to consider the effect of electrostatic energy level in electron reservoir such as source and drain electrodes because the portion of the electrodes near the quantum dot is similar with the dot in size. In this study, we fabricated two SETs with a different structure, and investigated the influence of the energy level in small source and drain electrodes on the negative conductance.
  • Mingyu Jo, Reon Katsumura, Atsushi Tsurumaki-Fukuchi, Masashi Arita, Yasuo Takahashi, Hideyuki Ando, Takashi Morie
    2016 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW) 78 - 79 2016年 [査読有り][通常論文]
     
    Multilevel resistive random access memory (ReRAM) is known as a key device for neural networks and reconfigurable computing. Control of the resistance is important to utilize ReRAM as an analog-resistance memory. In this study, we confirm that MoOx ReRAM shows analog memory characteristics by the control of compliance current. In addition, we propose a verification method to achieve target resistances.
  • Masashi Arita, Yuuki Ohno, Yosuke Murakami, Keisuke Takamizawa, Atsushi Tsurumaki-Fukuchi, Yasuo Takahashi
    NANOSCALE 8 31 14754 - 14766 2016年 [査読有り][通常論文]
     
    The switching operation of a Cu/MoOx/TiN resistive random access memory (ReRAM) device was investigated using in situ transmission electron microscopy (TEM), where the TiN surface was slightly oxidized (ox-TiN). The relationship between the switching properties and the dynamics of the ReRAM microstructure was confirmed experimentally. The growth and/or shrinkage of the conductive filament (CF) can be classified into two set modes and two reset modes. These switching modes depend on the device's switching history, factors such as the amount of Cu inclusions in the MoOx layer and the CF geometry. High currents are needed to produce an observable change in the CF. However, sharp and stable switching behaviour can be achieved without requiring such a major change. The local region around the CF is thought to contribute to the ReRAM switching process.
  • Mingyu Jo, Takafumi Uchida, Atsushi Tsurumaki-Fukuchi, Masashi Arita, Akira Fujiwara, Yukinori Ono, Katsuhiko Nishiguchi, Hiroshi Inokawa, Yasuo Takahashi
    JOURNAL OF APPLIED PHYSICS 118 21 214305  2015年12月 [査読有り][通常論文]
     
    A triple-dot single-electron transistor was fabricated on silicon-on-insulator wafer using pattern-dependent oxidation. A specially designed one-dimensional silicon wire having small constrictions at both ends was converted to a triple-dot single-electron transistor by means of pattern-dependent oxidation. The fabrication of the center dot involved quantum size effects and stress-induced band gap reduction, whereas that of the two side dots involved thickness modulation because of the complex edge structure of two-dimensional silicon. Single-electron turnstile operation was confirmed at 8K when a 100-mV, 1-MHz square wave was applied. Monte Carlo simulations indicated that such a device with inhomogeneous tunnel and gate capacitances can exhibit single-electron transfer. (C) 2015 AIP Publishing LLC.
  • T. Tesfamichael, C. Cetin, C. Piloto, M. Arita, J. Bell
    APPLIED SURFACE SCIENCE 357 728 - 734 2015年12月 [査読有り][通常論文]
     
    Pure and W-doped ZnO thin films were obtained using magnetron sputtering at working pressures of 0.4 Pa and 1.33 Pa. The films were deposited on glass and alumina substrates at room temperature and subsequently annealed at 400 degrees C for 1 h in air. The effects of pressure and W-doping on the structure, chemical, optical and electronic properties of the ZnO films for gas sensing were examined. From AFM, the doped film deposited at higher pressure (1.33 Pa) has spiky morphology with much lower grain density and porosity compared to the doped film deposited at 0.4 Pa. The average gain size and roughness of the annealed films were estimated to be 65 nm and 2.2 nm, respectively with slightly larger grain size and roughness appeared in the doped films. From XPS the films deposited at 1.33 Pa favoured the formation of adsorbed oxygen on the film surface and this has been more pronounced in the doped film which created active sites for OH adsorption. As a consequence the W-doped film deposited at 1.33 Pa was found to have lower oxidation state of W (35.1 eV) than the doped film deposited at 0.4 Pa (35.9 eV). Raman spectra indicated that doping modified the properties of the ZnO film and induced free-carrier defects. The transmittance of the samples also reveals an enhanced free-carrier density in the W-doped films. The refractive index of the pure film was also found to increase from 1.7 to 2.2 after W-doping whereas the optical band gap only slightly increased. The W-doped ZnO film deposited at 0.4 Pa appeared to have favourable properties for enhanced gas sensing. This film showed significantly higher sensing performance towards 5-10 ppm NO2 at lower operating temperature of 150 degrees C most dominantly due to increased free-carrier defects achieved by W-doping. (C) 2015 Elsevier B.V. All rights reserved.
  • T. Tesfamichael, C. Piloto, M. Arita, J. Bell
    SENSORS AND ACTUATORS B-CHEMICAL 221 393 - 400 2015年12月 [査読有り][通常論文]
     
    Fe-doped tungsten oxide thin films with different concentrations (0-2.6 at%) were synthesized on glass and alumina substrates at room temperature using DC reactive sputtering and subsequently annealed at 300 degrees C for 1 h in air. The alumina substrate has pre-printed interdigitated Pt-electrodes for gas sensing measurements. The effects of Fe-doping on the film structure and morphology, electronic and optical properties for gas sensing were investigated. The grain size of the different films on the alumina and Pt regions of the substrate vary only slightly between 43 and 57 nm with median size of about 50 nm. Raman spectra showed that the integrated intensity of W=O to O-W-O bands increases with increasing Fe concentrations and this indicated an increase in the number of defects. From XPS the different concentrations of the Fe-doped films were 0.03 at%, 1.33 at% and 2.6 at%. All the films deposited on glass substrate have shown similar visible transmittance (about 70%) but the optical band gap of the pure film decreased form 3.30 eV to 3.15 eV after doping with 2.6 at% Fe. The Fe-doped WO3 film with the highest Fe concentration (2.6 at% Fe) has shown an enhanced gas sensing properties to NO2 at relatively lower operating temperature (150 degrees C) and this can be attributed to the decrease in the optical band gap and an increase in the number of defects compared to the pure WO3 film. (C) 2015 Elsevier B.V. All rights reserved.
  • Fabrication of triple-dot single-electron transistor and its turnstile operation
    M. Jo, T. Uchida, A. Tsurumaki-Fukuchi, M. Arita, A. Fujiwara, Y. Ono, K. Nishiguchi, H. Inokawa, Y. Takahashi
    Proc. MNC2015 12P-7-31-1 - 12P-7-31-2 2015年11月 [査読有り][通常論文]
  • Filament erasure in Cu/MoOx ReRAM investigated by in-situ TEM
    M. Arita, Y. Ohno, A. Tsurumaki-Fukuchi, Y. Takahashi
    Proc. MNC2015 12D6-1-1 - 12D6-1-2 2015年11月 [査読有り][通常論文]
  • Takafumi Uchida, Mingyu Jo, Atsushi Tsurumaki-Fukuchi, Masashi Arita, Akira Fujiwara, Yasuo Takahashi
    AIP ADVANCES 5 11 117144  2015年11月 [査読有り][通常論文]
     
    Series-connected triple quantum dots were fabricated by a simple two-step oxidation technique using the pattern-dependent oxidation of a silicon nanowire and an additional oxidation of the nanowire through the gap of the fine gates attached to the nanowire. The characteristics of multi-dot single-electron devices are obtained. The formation of each quantum dot beneath an attached gate is confirmed by analyzing the electrical characteristics and by evaluating the gate capacitances between all pairings of gates and quantum dots. Because the gate electrode is automatically attached to each dot, the device structure benefits from scalability. This technique promises integrability of multiple quantum dots with individual control gates. (C) 2015 Author(s).
  • Masashi Arita, Akihito Takahashi, Yuuki Ohno, Akitoshi Nakane, Atsushi Tsurumaki-Fukuchi, Yasuo Takahashi
    SCIENTIFIC REPORTS 5 17103  2015年11月 [査読有り][通常論文]
     
    In-situ transmission electron microscopy (in-situ TEM) was performed to investigate the switching operation of a resistive random access memory (ReRAM) made of copper, tungsten oxide and titanium nitride (Cu/WOx/TiN). In the first Set (Forming) operation to initialize the device, precipitation appeared inside the WOx layer. It was presumed that a Cu conducting filament was formed, lowering the resistance (on-state). The Reset operation induced a higher resistance (the off-state). No change in the microstructure was identified in the TEM images. Only when an additional Reset current was applied after switching to the off-state could erasure of the filament be seen (over-Reset). Therefore, it was concluded that structural change relating to the resistance switch was localized in a very small area around the filament. With repeated switching operations and increasing operational current, the WOx/electrode interfaces became indistinct. At the same time, the resistance of the off-state gradually decreased. This is thought to be caused by Cu condensation at the interfaces because of leakage current through the area other than through the filament. This will lead to device degradation through mechanisms such as endurance failure. This is the first accelerated aging test of ReRAM achieved using in-situ TEM.
  • Analog memory operation of resistance change memory with MOSFET for brain-like LSIs
    H. Ando, K. Tomizaki, T. Tohara, T. Morie, T. Hiroi, A. Nakane, R. Katsumura, A. Fukuchi, M. Arita, Y. Takahashi, S. Samukawa
    Proc. Fifteenth Internat. Symp. on Adv. Fluid Information 2015年10月 [査読有り][通常論文]
  • M. Arita, K. Hamada, Y. Takahashi, K. Sueoka, T. Shibayama
    The Transmission Electron Microscope - Theory and Applications 33 - 68 2015年09月02日 [査読有り][通常論文]
  • Formation of coupled triple silicon quantum dot with a compact device structure
    T. Uchida, A. Tsurumaki-Fukuchi, M. Arita, A. Fujiwara, Y. Takahashi
    Ext. Abst. SSDM 2015 920 - 921 2015年09月 [査読有り][通常論文]
  • Microstructural change in Cu/WOx/TiN during resistive switching
    M. Arita, A. Takahashi, Y. Ohno, A. Nakane, A. Tsurumaki-Fukuchi, Y. Takahashi
    Ext. Abst. SSDM 2015 1162 - 1163 2015年09月 [査読有り][通常論文]
  • 有田 正志, 髙橋 庸夫
    半導体・集積回路技術シンポジウム講演論文集 = Proceedings of Symposium on Semiconductors and Integrated Circuits Technology 79 21 - 24 電気化学会電子材料委員会 2015年07月09日 [査読無し][通常論文]
  • Variation of Coulomb diamonds and excited states caused by electric field in Si single-electron transistor
    H. Sato, T. Uchida, A. Tsurumaki-Fukuchi, M. Arita, A. Fujiwara, Y. Takahashi
    Proc. 2015 Silicon Nanoelectronics Workshop 1 - 2 2015年06月 [査読有り][通常論文]
  • Series-triple quantum dots fabricated under each control gate by the use of thermal oxidation
    T. Uchida, H. Sato, A. Tsurumaki-Fukuchi, M. Arita, A. Fujiwara, Y. Takahashi
    Proc. 2015 Silicon Nanoelectronics Workshop 1 - 2 2015年06月 [査読有り][通常論文]
  • 吉岡 勇, 佐藤 光, 内田 貴史, 福地 厚, 有田 正志, 藤原 聡, 高橋 庸夫
    電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 114 442 17 - 22 一般社団法人電子情報通信学会 2015年02月05日 [査読無し][通常論文]
     
    ナノドットアレイ単電子デバイスは多入力・多出力であり、単一デバイスでこれまでのCMOSにはない高機能性を実現できる。この高機能化は、多くの入力ゲートが、多くのナノドットと結合していることに依るが、ゲート数を増やすと、他のゲートにシールドされ多くのドットと容量結合できなくなる。本研究では、ゲート配置に対するナノドットアレイの機能性について、入力ゲートと結合するドット数が異なるデバイスを実際に評価した。入力ゲートがナノドットアレイの一部分としか結合していないデバイスでもXORなどの論理関数を得ることができた。これにより、ナノドットアレイデバイスで独立にゲートを接続しても高機能性は維持されることがわかった。
  • Takafumi Uchida, Masashi Arita, Akira Fujiwara, Yasuo Takahashi
    JOURNAL OF APPLIED PHYSICS 117 8 84316  2015年02月 [査読有り][通常論文]
     
    Tunability of capacitive coupling in the Si double-quantum-dot system is discussed by changing the number of electrons in quantum dots (QDs), in which the QDs are fabricated using pattern-dependent oxidation (PADOX) of a Si nanowire and multi-fine-gate structure. A single QD formed by PADOX is divided into multiple QDs by additional oxidation through the gap between the fine gates. When the number of electrons occupying the QDs is large, the coupling capacitance increases gradually and almost monotonically with the number of electrons. This phenomenon is attributed to the gradual growth in the effective QD size due to the increase in the number of electrons in the QDs. On the other hand, when the number of electrons changes in the few-electron regime, the coupling capacitance irregularly changes. This irregularity can be observed even up to 40 electrons. This behavior is attributable the rough structure of Si nano-dots made by PADOX. This roughness is thought to induce complicated change in the electron wave function when an electron is added to or subtracted from a QD. (C) 2015 AIP Publishing LLC.
  • Yasuo Takahashi, Masaki Kudo, Masashi Arita
    ECS Transactions 69 10 299 - 309 2015年 [査読有り][招待有り]
     
    Performance of in-situ-transmission electron microscopy (TEM) applied to analysis of the resistive random access memory (ReRAM) is reported. Recent progress of ReRAMs makes it indispensable to understand the resistive switching mechanism in order to guarantee the reliability of ReRAMs. Since the TEM provides a high resolution images of the nanostructure, in-situ TEM should be a powerful tool for the analysis if electrical characteristics of ReRAMs can be measured in the TEM. The two sample fabrication methods are applied to two different ReRAM devices. Switching characteristics, which are almost the same as those measured at the outside of TEM by the use of conventional ReRAM cells, are achieved together with clear images of formation and rupture of conductive filaments corresponding to the low and high resistance states. In addition, retention characteristics longer than 106 s, and SET/RESET pulse operation more than 100k times are confirmed during TEM observation. These results indicate that the in-situ TEM will be a powerful tool to analyze the reliability of ReRAMs.
  • Masaki Kudo, Masashi Arita, Yasuo Takahashi, Kazuhiro Ohba, Masayuki Shimuta, Ichiro Fujiwara
    2015 IEEE 7TH INTERNATIONAL MEMORY WORKSHOP (IMW) 85 - 88 2015年 [査読有り][通常論文]
     
    The paper shows clear evidence that in-situ transmission electron microscopy (TEM) can be used as a powerful tool to analyze ReRAM operation. Reproducible resistive switching of 100k cycles in 30- or 70-nm Cu-Te CBRAMs was achieved for the first time during in-situ TEM observation. A TEM sample of the CBRAM cells was processed by a focused ion beam method. The formation and rupture of a Cu filament was observed and analyzed in the TEM with energy dispersive x-ray (EDX) mapping. Since the overshoot current at the resistive switching was efficiently suppressed by a MOSFET placed in the TEM holder, stable and reproducible ReRAM switching operations were achieved in the TEM.
  • Masaki Kudo, Masashi Arita, Yuuki Ohno, Yasuo Takahashi
    APPLIED PHYSICS LETTERS 105 17 173504  2014年10月 [査読有り][通常論文]
     
    In-situ filament observations were carried out on the Cu/MoOx/TiN resistive random access memory (ReRAM) by using transmission electron microscopy. Multiple positive and negative I-V cycles were investigated. Clear set-reset bipolar switch corresponding to the characteristics of conventional ReRAM devices was recognized. Filament grew from TiN to Cu in the set cycle and shrank from TiN to Cu in the reset cycle. However, there was no clear contrast change in the image at the switching moment, and thus, switching is thought to occur in a local region of the filament. When the current was large at reset, the filament shrank much, and its position tended to change. (C) 2014 AIP Publishing LLC.
  • Masashi Arita, Ryohei Tokuda, Kouichi Hamada, Yasuo Takahashi
    MATERIALS TRANSACTIONS 55 3 403 - 409 2014年03月 [査読有り][通常論文]
     
    For easy performance of Lorentz microscopy with simultaneous electric measurements, a special specimen holder for transmission electron microscopy (TEM) has been developed that has electromagnets to generate magnetic field and four leads for electric measurements. This TEM holder was evaluated by checking experimental results of permalloy (Ni0.8Fe0.2) patterns. Clear observations of domain wall injection into a nanowire and movement of magnetic vortices as well as magnetoresitance during the development of magnetic domains were performed. It appeared possible to apply in-plane magnetic fields along any direction with intensities of less than about 15.9 kA/m (200 Oe).
  • 大野 裕輝, 廣井 孝弘, 工藤 昌輝, 浜田 弘一, 有田 正志, 高橋 庸夫
    電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 113 450 89 - 94 一般社団法人電子情報通信学会 2014年02月27日 [査読無し][通常論文]
     
    固体電解質を用いたタイプの抵抗変化メモリ(ReRAM)では,固体電解質中の金属イオンの移動による伝導パス形成/破壊が動作原理として有力視されているが、その詳細は未解明である。我々はReRAMの動作機構を評価するため、Cu/MoO_x構造のReRAMのスイッチ動作の詳細を、その場TEM手法により観察した。TEM内で実デバイスのメモリ特性を再現でき、Set時にはCuフィラメントの形成、Reset時には消失が起こった。繰り返しスイッチ評価をしたところ、フィラメントは一か所で形成-消滅を繰り返すわけでなく、その位置を変えることが観察された。
  • G.-F. Li, Y. Honda, H.-X. Liu, K. Matsuda, M. Arita, T. Uemura, M. Yamamoto, Y. Miura, M. Shirai, T. Saito, F. Y. Shi, P. M. Voyles
    Physical Review B 89 1 2014年01月 [査読有り][通常論文]
  • In-situ TEM observation of gold nanogaps by electromigration
    Yosuke MURAKAMI, Hayato OCHI, Masashi ARITA, Kouichi HAMADA, Yasuo TAKAHASHI, Seiji TAKEDA
    Proc. World Congr. ANBRE-13 622 - 627 2013年08月 [査読有り][通常論文]
  • Double quantum dot Si single-electron transistor with multiple gate electrodes fabricated by PADOX
    Takafumi UCHIDA, Masashi ARITA, Akira FUJIWARA, Yasuo TAKAHASHI
    Proc. ANBRE-13 498 - 503 2013年08月 [査読有り][通常論文]
  • In-situ TEM observation on Cu/MoOx resitive switching RAM
    Masaki KUDO, Yuuki OHNO, Kouichi HAMADA, Masashi ARITA, Yasuo TAKAHASHI
    Proc. ANBRE-13 492 - 497 2013年08月 [査読有り][通常論文]
  • Takashi Fujii, Masashi Arita, Kouichi Hamada, Yasuo Takahashi, Norihito Sakaguchi
    JOURNAL OF APPLIED PHYSICS 113 8 083701-083701-7  2013年02月 [査読有り][通常論文]
     
    We used thermal oxidization at various temperatures to prepare NiO/Pr-Ir for use in resistance random access memory (ReRAM) samples. In-situ transmission electron microscopy (TEM) was used to investigate the forming process of these ReRAM samples, where a needle-shaped top electrode of Pt-Ir was attached to the NiO/Pt-Ir ReRAM layer. The forming voltage initializing the NiO layer increased at an oxidization temperature of between 200 and 400 degrees C. In this process, conductive bridges, which are thought to be conductive filaments of a ReRAM, appeared, and their sizes showed a correlation with the injection power. It was as small as about 300 nm(2) when the injection power was 10(-6) W. Energy dispersive X-ray spectroscopy was used to analyze the bridge, and it was experimentally confirmed that the oxygen content of the bridge was lower than that of the initial NiO layer. However, these bridges in the low resistance state did not show further ReRAM switching to the high resistance state inside of a TEM instrument. To check the reason of this result, we investigated samples outside of the TEM instrument, which had similar geometry to that of TEM specimens. They showed the ReRAM switching in air ambient but not in vacuum. Combining these results inside and outside of the TEM instrument, it can be concluded that the existence of oxygen around the conductive filament plays an important role. This supports the filament redox model on the ReRAM operation. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4792732]
  • Yasuo Takahashi, Shinichiro Ueno, Masashi Arita
    JOURNAL OF NANOMATERIALS 2013 702094-1 - 702094-7 2013年 [査読有り][通常論文]
     
    Multifunctional logic gate devices consisting of a nanodot array are studied from the viewpoint of single electronics. In a nanodot array, the dots come in a random variety of sizes, which sometimes has a negative effect on the performance of electrical device applications. Here, this feature is used in a positive sense to achieve higher functionality in the form of flexible logic gates with low power consumption in which the variability of logic functions is guaranteed. Nanodot arrays with two input gates and one control gate in a variety of arrangements are considered, in which the two-input logic functions (such as NAND, NOR, or exclusive-OR (XOR) gates) are selected by changing the voltage applied to the control gate. To ensure the flexibility of the device, it is important to guarantee the performance with any one of the six important logic functions: NAND, AND, NOR, OR, XOR, and XNOR. We ran a selection simulation using a nanodot array consisting of six nanodots with different dot arrangements to clarify the relation between the variability of the logic functions and the dot arrangements.
  • Masaki Kudo, Masashi Arita, Yuuki Ohno, Takashi Fujii, Kouichi Hamada, Yasuo Takahashi
    Thin Solid Films 533 48 - 53 2013年 [査読有り][通常論文]
     
    The ion-shadow method, an ion milling process using carbon particles as the mask material, is investigated as a means of preparing resistance random access memory (ReRAM) samples for in situ transmission electron microscopy (TEM). With a milling time of 1 hour (Ar+, 5 kV, 1 mA), multiple long needles (> 5 μm), on which there are miniaturized ReRAM devices comprising a ReRAM insulating layer sandwiched by two metallic electrodes, are formed on the substrate. Device sizes of up to several hundreds of nm are easily obtained with the method. The internal part of small devices (i.e., up to 100 nm) can be observed by TEM. Electrical measurements using an in situ TEM holder demonstrate that sufficient electric contact is obtained without any electric shortage between the electrodes due to re-deposition of milled material. The ion-shadow method is confirmed to be a quick and easy method suitable for in situ TEM experiments, especially for ReRAM devices which are highly susceptible to destruction during the switching operation. © 2012 Elsevier B.V. All rights reserved.
  • M. Kudo, Y. Ohno, K. Hamada, M. Arita, Y. Takahashi
    ECS Transactions 58 5 19 - 25 2013年 [査読有り][通常論文]
     
    In-situ TEM observation was applied to a miniaturized Cu/MoOx/TiN ReRAM device shaped by the ion-shadow method. Applying a positive voltage to the Cu top electrode, resistive switching from the high-resistance state (HRS) to the low-resistance state (LRS) occurred, and a precipitation appeared in the switching layer of MoOx. On the other hand, negative voltage to Cu erased the precipitation, and the resistance state was converted from LRS to HRS. Growth or contraction of the precipitation was recognized during further voltage application after the switching operation. The precipitation observed in this work is thought to correlate with the resistive switching, and its formation and rupture phenomenon agrees to the switching mechanism based on conductive filaments. © The Electrochemical Society.
  • Yosuke Murakami, Masashi Arita, Kouichi Hamada, Yasuo Takahashi
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 12 11 8741 - 8745 2012年11月 [査読有り][通常論文]
     
    Electromigration of thin Au wire is studied by the use of in-situ transmission electron microscopy (TEM) techniques from the viewpoint of nanogap formation. We use a relatively wide Au wire as a starting material because the position-dependent structure change in the wire provides information of the thermal effect caused by the current flow. In-situ TEM observation, in which current measurements of the Au wire are simultaneously performed, reveals the process of the growth of voids and grains. Finally the formation of a nanogap by electromigration is observed doing with current measurements. All the results observed by in-situ TEM indicate the fact that the thermal effects or temperature increase in the wire region take an important role for the structure change caused by electromigration of Au in the wire. It is suggested that the position of the nanogap can roughly be arranged by setting the wire structure and current direction even though a relatively wide wire was used. The detailed observation by in-situ TEM also suggests that the control of heat generation in the wire makes the nanogap sharp because of the well-controlled recrystallization of Au nanowires.
  • Hong-xi Liu, Yusuke Honda, Tomoyuki Taira, Ken-ichi Matsuda, Masashi Arita, Tetsuya Uemura, Masafumi Yamamoto
    APPLIED PHYSICS LETTERS 101 13 132418-132418-5  2012年09月 [査読有り][通常論文]
     
    Giant tunnel magnetoresistance (TMR) ratios of up to 1995% at 4.2K and up to 354% at 290K were obtained for epitaxial Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions (MTJs) featuring a reduced lattice mismatch in the MTJ trilayer by introducing a thin Co2MnSi lower electrode deposited on a Co50Fe50 buffer layer. The obtained giant TMR ratios can be explained by the enhanced contribution of coherent tunneling originating from the increased misfit dislocation spacing at the lower and upper interfaces with a MgO barrier along with the half-metallicity of Co2MnSi electrodes. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4755773]
  • Hong-xi Liu, Yusuke Honda, Ken-ichi Matsuda, Masashi Arita, Tetsuya Uemura, Masafumi Yamamoto
    JAPANESE JOURNAL OF APPLIED PHYSICS 51 9 093004.1-093004.9  2012年09月 [査読有り][通常論文]
     
    Fully epitaxial magnetic tunnel junctions (MTJs) with a Heusler alloy Co2MnSi electrode and a MgO barrier were prepared on MgO-buffered MgO(001) substrates with various layer structures to elucidate the contribution of coherent tunneling to the spin-dependent tunneling characteristics of these MTJs, which potentially feature both the half-metallicity of Co2MnSi and coherent tunneling. MTJs consisting of (from the lower side) Co50Fe50 (CoFe)/MgO/Co2MnSi or CoFe-buffered Co2MnSi/MgO/CoFe showed almost identical, high tunnel magnetoresistance (TMR) ratios of 335% at 290 K (1049% at 4.2 K) and 340% at 290K (879% at 4.2 K), respectively. In contrast, MTJs consisting of MgO-buffered Co2MnSi/MgO/CoFe showed a lower TMR ratio of 173% at 290 K (448% at 4.2 K). The higher TMR ratios obtained for CoFe/MgO/Co2MnSi MTJs and CoFe-buffered Co2MnSi/MgO/CoFe MTJs can be ascribed to the enhanced contribution of coherent tunneling that originated from decreased misfit dislocation densities at the lower and upper interfaces with a MgO barrier. (C) 2012 The Japan Society of Applied Physics
  • M. Arita, H. Kaji, T. Fujii, Y. Takahashi
    THIN SOLID FILMS 520 14 4762 - 4767 2012年05月 [査読有り][通常論文]
     
    Resistive random access memory (ReRAM) properties in which the resistance of the insulating material drastically changes by voltage application have recently attracted much attention. In this work, molybdenum oxide prepared by thermal oxidation of Mo films was studied to investigate its potential as a material exhibiting ReRAM switching. The samples oxidized between 400 and 600 degrees C were composed of MoO3 and were switchable. Current-to-voltage curves, which were measured in air at room temperature by using a Pt-Ir probe as the top electrode, indicated the yielding of both the monopolar and bipolar switching properties. The resistance on-off ratio was between 10 and 10(2). (C) 2011 Elsevier B.V. All rights reserved.
  • Mingu Jo, Yuki Kato, Masashi Arita, Yukinori Ono, Akira Fujiwara, Hiroshi Inokawa, Yasuo Takahashi, Jung-Bum Choi
    IEICE TRANSACTIONS ON ELECTRONICS E95C 5 865 - 870 2012年05月 [査読有り][通常論文]
     
    We developed a flexible-logic-gate single-electron device (SED) in which logic functions can be selected by changing the voltage applied to the control gate. It consists of an array of nanodots with multiple inputs and multiple outputs. Since the gate electrodes couple capacitively to the many dots underneath, complicated characteristics depending on the combination of the gate voltages yield a selectable logic gate when some of the gate electrodes are used as control gates. One of the important issues is how to design the arrangement of nanodots and gate electrodes. In this study, we fabricated a Si nanodot array with two simple input gates and two output terminals, in which each gate was coupled to half of the nanodot array. Even though the device had a very simple input-gate arrangement and just one control gate, we could create a half-adder function through the use of current maps as functions of the input gate voltages. We found that the nanodots evenly coupled capacitively to both input gates played an important role in getting a basic set of logic functions. Moreover, these results guarantee that a more complicated input-gate structure, in which each gate evenly couples many nanodots, will yield more complicated functions.
  • Takashi Fujii, Masashi Arita, Yasuo Takahashi, Ichiro Fujiwara
    JOURNAL OF MATERIALS RESEARCH 27 6 886 - 896 2012年03月 [査読有り][招待有り]
     
    In situ transmission electron microscopy (TEM) was carried out to investigate the dynamics of resistance switching in a solid electrolyte, Cu-Ge-S. By applying voltage to Pt-Ir/Cu-Ge-S/Pt-Ir, where Pt-Ir constituted the electrodes, a deposit containing conductive filaments composed mainly of Cu was formed around the cathode. As voltage continued to be applied, the deposit grew and finally narrow conductive filaments made contact with the anode. This corresponded to resistance switching from high-to low-resistance states (HRS and LRS). By alternating the voltage, the deposit contracted toward the cathode and detached from the anode. The resistance immediately changed from LRS to HRS. By applying voltage, the deposit containing Cu-based filaments grew and shrank, and resistance switching occurred at the electrolyte-anode interface. This conductive filament-formation model, which was recently reported, was experimentally confirmed with TEM through dynamic observations of the deposit-containing filaments.
  • 石川 琢磨, 佐藤 栄太, 浜田 弘一, 有田 正志, 高橋 庸夫
    電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス 111 426 59 - 64 一般社団法人電子情報通信学会 2012年01月 [査読無し][通常論文]
     
    表面清浄化に注意して準備したSiO_2/Si基板上に,室温の交互蒸着法によりMgF_2/Feナノドット/MgF_2グラニュラー膜を作成し,基本的電気特性評価を行った.膜の電気伝導はパーコレーション膜厚(〜5nm)以下でトンネル伝導であった.Feナノドットサイズは3〜5nm程度であると考えられる.約2nmの膜厚の試料に対して,室温で8.6%,4.6Kで15.0%のトンネル磁気抵抗(TMR)効果が得られた.TMR比はバイアス電圧の増加に伴いいったん増加し,その後減少に転じた.最大のTMR比を与える電圧値は低温において低電圧側に移動し,詳細は不明であるものの,単電子伝導の寄与が期待される.
  • 竹中 浩人, 篠原 迪人, 内田 貴史, 有田 正志, 藤原 聡, 高橋 庸夫
    電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス 111 426 19 - 24 一般社団法人電子情報通信学会 2012年01月 [査読無し][通常論文]
     
    単電子トランジスタ(SET)は、低消費電力で動作するデバイスとして知られているが、その高速動作性に関しては、十分調べられていない。SETのドレイン電極に交流電圧を印加すると、クーロンダイヤモンドの非対称性から整流作用を示すことが知られている。本研究では、ドレイン電極に高周波電圧を印加した際のこの整流作用を用いて、シリコンSETの高周波特性を評価できることを明らかにしたので報告する。
  • Gui-fang Li, Tomoyuki Taira, Ken-ichi Matsuda, Masashi Arita, Tetsuya Uemura, Masafumi Yamamoto
    APPLIED PHYSICS LETTERS 98 26 262505-1-262505-3  2011年06月 [査読有り][通常論文]
     
    We prepared Heusler alloy Co2MnSi/MgO heterostructures on single-crystal Ge(001) substrates through magnetron sputtering for Co2MnSi and electron beam evaporation for MgO as a promising candidate for future generation spin-based functional devices. Structural investigations showed that the Co2MnSi/MgO heterostructure was grown epitaxially on a Ge(001) substrate with extremely smooth and abrupt interfaces and showed the L2(1) structure for the Co2MnSi film. Furthermore, a sufficiently high saturation magnetization (mu(s)) value of 5.1 mu(B)/f.u. at 10 K, which is close to the theoretically predicted mu(s) of 5.0 mu(B)/f.u. for half-metallic Co2MnSi, was obtained for prepared Co2MnSi films. (C) 2011 American Institute of Physics. [doi:10.1063/1.3605675]
  • Takashi Fujii, Masashi Arita, Yasuo Takahashi, Ichiro Fujiwara
    APPLIED PHYSICS LETTERS 98 21 212104-1-212104-3  2011年05月 [査読有り][通常論文]
     
    An in situ transmission electron microscopy (TEM) analysis of a solid electrolyte, Cu-GeS, during resistance switching is reported. Real-time observations of the filament formation and disappearance process were performed in the TEM instrument and the conductive-filament-formation model was confirmed experimentally. Narrow conductive filaments were formed corresponding to resistance switching from high- to low-resistance states. When the resistance changed to high- resistance state, the filament disappeared. It was also confirmed by use of selected area diffractometry and energy-dispersive x-ray spectroscopy that the conductive filament was made of nanocrystals composed mainly of Cu. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3593494]
  • Takashi Fujii, Masashi Arita, Kouichi Hamada, Hirofumi Kondo, Hiromichi Kaji, Yasuo Takahashi, Masahiro Moniwa, Ichiro Fujiwara, Takeshi Yamaguchi, Masaki Aoki, Yoshinori Maeno, Toshio Kobayashi, Masaki Yoshimaru
    JOURNAL OF APPLIED PHYSICS 109 5 053702-1-053702-5  2011年03月 [査読有り][通常論文]
     
    Conduction measurements with simultaneous observations by transmission electron microscopy (TEM) were performed on a thin NiO film, which is a candidate material for resistance random access memories (ReRAMs). To conduct nanoscale experiments, a piezo-controlled TEM holder was used, where a fixed NiO sample and a movable Pt-Ir counter electrode were placed. After the counter electrode was moved to make contact with NiO, I-V measurements were carried out from any selected nanoregions. By applying a voltage of 2 V, the insulating NiO film was converted to a low resistance film. This phenomenon may be the "forming process" required to initialize ReRAMs. The corresponding TEM image indicated a structural change in the NiO layer generating a conductive bridge with a width of 30-40 nm. This finding supports the "breakdown" type forming in the so-called "filament model" of operation by ReRAMs. The inhomogeneity of resistance in the NiO film was also investigated. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3553868]
  • 篠原 迪人, 加藤 勇樹, 三上 圭, 有田 正志, 藤原 聡, 高橋 庸夫
    電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス 110 424 63 - 66 一般社団法人電子情報通信学会 2011年02月 [査読無し][通常論文]
     
    強い縦方向電界を印加した単電子トランジスタ(SET)では、光照射により単電子島で単一電子・正孔対が生成・消滅することで電気伝導特性が変化することが知られている.われわれはシリコンのSETにおいて,基板縦方向電界無しに光照射のみで電気伝導特性が変化することを見出した.これは光照射により励起された正孔1個が単電子島周囲にあるSiO_2にトラップされ,この正の電荷のために新たな電子が流れることが可能になったためである.トラップされた正孔の保持時間はゲート電圧の大きさにより異なることがわかった.
  • In-situ transmission electron microscoy analysis of conductive filament in resistance random access memories
    ECS Transactions 41 7 81 - 91 2011年 [査読有り][招待有り]
  • Yasuo Takahashi, Mingyu Jo, Takuya Kaizawa, Yuki Kato, Masashi Arita, Akira Fujiwara, Yukinori Ono, Hiroshi Inokawa, Jung-Bum Choi
    TECHNOLOGY EVOLUTION FOR SILICON NANO-ELECTRONICS 470 175 - + 2011年 [査読有り][通常論文]
     
    Small single-electron devices (SEDs) consisting of many Si nanodots are fabricated on a silicon-on-insulator (SOT) wafer by means of pattern-dependent oxidation (PADOX) method. We investigated SEDs from two kinds of viewpoint. One is how to fabricate the nanodots, especially coupled nanodots, which are important to achieve quantum computers and single-electron transfer devices. The other is demonstration of new applications that tolerate the size fluctuation. In order to achieve multi-coupled nanodots, we developed an easy method by applying PADOX to a specially designed Si nanowire which has small constrictions at the ends of the wire. We confirmed the double-dot formation and position of the Si nanodots in the wire by analyzing the measured electrical characteristics. To achieve high functionality together with low-power consumption and tolerance to size fluctuation, we developed nanodot array device which has many input gates and outputs terminals. The fabricated three-input and two-output nanodot device actually provide high functionality such as a half adder and a full adder.
  • Japanese Journal of Applied Physics 50 081101-1-081101-6  2011年 [査読有り][通常論文]
  • Tuquabo Tesfamichael, Masashi Arita, Thor Bostrom, John Bell
    THIN SOLID FILMS 518 17 4791 - 4797 2010年06月 [査読有り][通常論文]
     
    Pure tungsten oxide (WO3) and iron-doped (10 at.%) tungsten oxide (WO3:Fe) nanostructured thin films were prepared using a dual crucible Electron Beam Evaporation (EBE) technique. The films were deposited at room temperature under high vacuum onto glass as well as alumina substrates and post-heat treated at 300 degrees C for 1 h. Using Raman spectroscopy the as-deposited WO3 and WO3:Fe films were found to be amorphous, however their crystallinity increased after annealing. The estimated surface roughness of the films was similar (of the order of 3 nm) to that determined using Atomic Force Microscopy (AFM). As observed by AFM, the WO3:Fe film appeared to have a more compact surface as compared to the more porous WO3 film. X-ray photoelectron spectroscopy analysis showed that the elemental stoichiometry of the tungsten oxide films was consistent with WO3. A slight difference in optical band gap energies was found between the as-deposited WO3 (3.22 eV) and WO3:Fe (3.12 eV) films. The differences in the band gap energies of the annealed films were significantly higher, having values of 3.12 eV and 2.61 eV for the WO3 and WO3:Fe films respectively. The heat treated films were investigated for gas sensing applications using noise spectroscopy. It was found that doping of Fe to WO3 produced gas selectivity but a reduced gas sensitivity as compared to the WO3 sensor. (C) 2010 Elsevier B.V. All rights reserved.
  • The influence of annealing temperature on ReRAM characteristics of metal/NiO/metal structure
    IOP Conference Series: Materials Science and Engineering 8 012034-1-012034-4  2010年 [査読有り][通常論文]
  • Mingyu Jo, Takuya Kaizawa, Masashi Arita, Akira Fujiwara, Yukinori Ono, Hiroshi Inokawa, Jung-Bum Choi, Yasuo Takahashi
    THIN SOLID FILMS 518 S186 - S189 2010年01月 [査読有り][通常論文]
     
    We propose a simple method for fabricating Si single-electron transistors (SET) with coupled dots by means of a pattern-dependent-oxidation (PADOX) method. The PADOX method is known to convert a small one-dimensional Si wire formed on a silicon-on-insulator (SOI) substrate into a SET automatically. We fabricated a double-dot Si SET when we oxidized specially designed Si nanowires formed on SOI substrates. We analyzed the measured electrical characteristics by fitting the measurement and simulation results and confirmed the double-dot formation and the position of the two dots in the Si wire. (C) 2009 Elsevier B.V. All rights reserved.
  • Effect of electrode and interface oxide on the property of ReRAM composed of Pr0.7Ca0.3MnO3
    IOP Conference Series: Materials Science and Engineering 8 012032-1-012032-4  2010年 [査読有り][通常論文]
  • I-V hysteresis of Pr0.7Ca0.3MnO3 during TEM observation
    IOP Conference Series: Materials Science and Engineering 8 012033-1-012033-4  2010年 [査読有り][通常論文]
  • Takuya Kaizawa, Masashi Arita, Akira Fujiwara, Kenji Yamazaki, Yukinori Ono, Hiroshi Inokawa, Yasuo Takahashi, Jung-Bum Choi
    IEEE TRANSACTIONS ON NANOTECHNOLOGY 8 4 535 - 541 2009年07月 [査読無し][通常論文]
     
    We have developed a flexible-logic-gate singleelectron device (SED) with an array of nanodots. Although the small size of SEDs is highly advantageous, the size of the nanodots inevitably fluctuates, which causes variations in device characteristics. This variability can be eliminated and high device functionality can be obtained by exploiting the oscillatory characteristics and multigate capability of SEDs. We fabricated, on a silicon-on-insulator wafer, a Si nanodot array device with two input gates and a control gate and investigated its basic operation characteristics experimentally. The device was demonstrated to operate as a logic gate providing six important logic functions (AND, OR, NAND, NOR, XOR, and XNOR), which are obtained by adjusting the control-gate voltage.
  • Eisaku Kaji, Agus Subagyo, Masashi Arita, Kazuhisa Sueoka
    JOURNAL OF APPLIED PHYSICS 105 7 07D545-1-07D545-3  2009年04月 [査読無し][通常論文]
     
    The crystallographic structure of antiphase domain boundaries (APBs) and the magnetic structure of large domains of magnetite (Fe(3)O(4)) thin films, which were epitaxially grown on MgO(001) substrates and annealed in an ambient condition, were investigated by scanning tunneling microscopy (STM), transmission electron microscopy (TEM), magnetic force microscopy (MFM), and scanning electron microscopy with polarization analysis (SEMPA). STM and TEM showed the morphology of the APBs in film surfaces and the bulk, whereas MFM and SEMPA showed the magnetic structure of the surfaces. As in previous paper reported by another group, STM and TEM observations revealed the antiphase domains on a scale from tens of nanometers to a few hundred nanometers. Also MFM measurement showed the magnetic domains on a scale of a few hundred nanometers and large-scale undulations of a few micrometers. Our SEMPA observations of the films displayed large-scale magnetic structures on a scale of a few hundred nanometers to a few micrometers. These large-scale magnetic structures are expected to be induced by the enlargement of magnetic domains that contain magnetic moments aligned along a magnetic easy axis. These moments have in-plane components that make the SEMPA images visible. An air-annealing process is needed to change magnetic couplings in APBs and to form large-scale magnetic ordering. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3089493]
  • Takuya Kaizawa, Mingyu Jo, Masashi Arita, Akira Fujiwara, Kenji Yamazaki, Yukinori Ono, Hiroshi Inokawa, Yasuo Takahashi
    IJNMC 1 2 58 - 69 2009年 [査読有り][通常論文]
  • 平成20年度リフレッシュ理科教室開催報告-サイエンスオリエンテーリング2008in札幌
    応用物理教育 33 1 25 - 30 2009年 [査読無し][招待有り]
  • 2008年度リフレッシュ理科教室報告[Web版]
    応用物理(2009)[Web版] WS-0004 1 - 4 2009年 [査読無し][通常論文]
  • Fabrication of double-dot single-electron transistor in silicon nanowire, IEICE Technical Report
    IEICE Technical Report ED2009-94 189 - 192 2009年 [査読無し][通常論文]
  • Novel funtional single-electron devices using silicon nanodot array
    IEICE Technical Report ED2009-83 145 - 148 2009年 [査読無し][通常論文]
  • M. Arita, K. Wakasugi, K. Ohta, K. Hamada, Y. Takahashi, J. -B. Choi
    MICROELECTRONIC ENGINEERING 85 12 2445 - 2450 2008年12月 [査読無し][通常論文]
     
    For tunneling magnetoresistance (TMR) devices using ferromagnetic nano particle films, the size, dispersion and number of nano particles are important factors. Relating to this, single layered Fe films (thickness: t = 0.5 - 10.0 nm) sandwiched between two MgO (2 nm thick) layers were fabricated by molecular beam epitaxy. By depositing at T(s) = RT (room temperature), the Fe layer had an isolated island structure for less than I nm thick. Correspondingly, the negative magnetoresistance effect was observed, which is characteristic of TMR. By increasing T,, the resistivity and the magnetoresistance (MR) ratio was increased. In this study, it was found that the optimal parameters for the growth of nano particle MgO/Fe/MgO based films are t = 0.5 - 1.0 nm and T(s) = RT - 120 degrees C. (C) 2008 Elsevier B.V. All rights reserved.
  • Mingyu Jo, Takuya Kaizawa, Masashi Arita, Akira Fujiwara, Kenji Yamazaki, Yukinori Ono, Hiroshi Inokawa, Yasuo Takahashi, Jung-Bum Choi
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 11 5-6 175 - 178 2008年10月 [査読無し][通常論文]
     
    We fabricated a nanodot-array device with multiple input gates on a silicon-on-insulator (SOI) wafer by using a pattern-dependent oxidation method with multiple input gates, which embodies a new concept of a flexible single-electron device. Although the device can generate many logic functions owing to the capacitive coupling between dots and many gates, the complicated structural configuration makes it difficult to confirm the formation of the nanodot array. For further investigation of this kind of device to achieve higher functionality, it is important to demonstrate experimentally that the dot array is actually formed. We analyzed the oscillation-peak shift caused by the gate voltage change, and successfully determined the location of the dots that contributed to the experimentally observed oscillations. (C) 2008 Elsevier Ltd. All rights reserved.
  • M. Arita, H. Hosoya, Y. Takahashi, J. -B. Choi
    SUPERLATTICES AND MICROSTRUCTURES 44 4-5 449 - 456 2008年10月 [査読無し][通常論文]
     
    We fabricated single-electron tunnelling devices with the current-in-plane geometry, which were made of Fe-SrF(2) nanogranular films (33. vol%Fe, length: 50-5000 nm, width: 400 nm). Their electric properties such as the current-to-bias voltage curves as well as the tunnelling magnetoresistance (TMR) were investigated by the two terminal measurements. A clear Coulomb blockade (CB) regime was recognized at 8 K when the device length was less than 500 nm. At about the CB threshold voltage, the sign change of TMR ratio was observed while it was +3% (a value corresponding to the data of Fe-SrF(2) films in millimeter size) at higher voltage (e.g. I V). (C) 2007 Elsevier Ltd. All rights reserved.
  • Masashi Arita, Youhei Okubo, Kouichi Hamada, Yasuo Takahashi
    SUPERLATTICES AND MICROSTRUCTURES 44 4-5 633 - 640 2008年10月 [査読無し][通常論文]
     
    Conductance measurements of nanostructures with simultaneous transmission electron microscopy (TEM) were performed on thin insulating MgO films (2-3 nm thick) and MgO/Fe/MgO tri-layer films (2 nm/1 nm/2 nm) deposited on tip-shaped Au electrodes. A movable counter electrode was used to choose nanoscale regions with contact areas smaller than 10 nm(2) for investigation. Systematic measurements on MgO films taken by keeping contact with the counter electrode provided a tunnelling barrier height of about 1.4 eV. The conductance of an MgO/Fe/MgO double junction composed of Fe nanoparticles showed the Coulomb-blockade-like characteristics at room temperature. The threshold voltage breaking the Coulomb blockade corresponded to the value estimated from the geometry observed by TEM. (C) 2008 Elsevier Ltd. All rights reserved.
  • 顕微鏡 43 181 - 187 2008年 [査読有り][招待有り]
  • H. Hosoy, M. Arita, H. Nishio, K. Ohta, K. Takezaki, K. Hamada, Y. Takahashi, J. -B. Choi
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 147 1 100 - 104 2008年01月 [査読無し][通常論文]
     
    We prepared single-electron tunnelling (SET) transistors made of Fe nanodots and investigated their fundamental properties. The device films were composed of Fe nanodot arrays embedded in a SrF2 matrix fabricated by the co-evaporation method on thermally oxidized Si substrates. The Si substrates were used as backgate electrodes. The current-to-voltage curves between source and drain electrodes were nonlinear even at room temperature. Coulomb blockade was clearly observed at 8 K. Current oscillation which is another SET characteristic was confirmed in the curves of drain current versus gate voltage. The oscillation period was roughly estimated to be about 20-40 V. (c) 2007 Elsevier B.V. All fights reserved.
  • Shinya Hakamata, Takayuki Ishikawa, Takao Marukame, Ken-ichi Matsuda, Tetsuya Uemura, Masashi Arita, Masafumi Yamamoto
    JOURNAL OF APPLIED PHYSICS 101 9 ,09J513  2007年05月 [査読無し][通常論文]
     
    We fabricated magnetic tunnel junctions (MTJs) with a Co-based full-Heusler alloy thin film of Co2MnGe (CMG) and a MgO tunnel barrier. The microfabricated MTJs with a Co-rich CMG film showed relatively high tunnel magnetoresistance ratios of 83% at room temperature and 185% at 4.2 K. These values are much higher than those previously obtained for CMG/MgO MTJs with a Co-deficient CMG film. (c) 2007 American Institute of Physics.
  • Siナノドットアレイを用いた多入力単電子デバイス
    電子情報通信学会技術研究報告書 106 520 35  2007年 [査読無し][通常論文]
  • H. Hosoya, M. Arita, K. Hamada, Y. Takahashi, K. Higashi, K. Oda, M. Ueda
    JOURNAL OF PHYSICS D-APPLIED PHYSICS 39 24 5103 - 5108 2006年12月 [査読無し][通常論文]
     
    We investigate composite Fe-SrF2 films to explore new materials showing the granular-type tunnelling magnetoresistance (TMR) effect. The films are composed of Fe nano-particles embedded in a SrF2 matrix. The electromagnetic properties of the ferromagnetic metal-insulator films are confirmed, including super-paramagnetism, tunnel conduction and TMR. We obtain a TMR of 3% at RT and 5% at 77 K. The film resistivity is much higher than that of oxide-based granular film. We also fabricate the nanostructures of granular films and aim at the application of the single-electron transistor. As a result, we observed a Coulomb blockade (CB) region and CB oscillation at low temperature.
  • T. Ishikawa, T. Marukame, H. Kijima, K. -I. Matsuda, T. Uemura, M. Arita, M. Yamamoto
    APPLIED PHYSICS LETTERS 89 19 192505-1-192505-3  2006年11月 [査読無し][通常論文]
     
    Fully epitaxial, exchange-biased magnetic tunnel junctions (MTJs) were fabricated with a Co-based full-Heusler alloy Co2MnSi (CMS) thin film as a lower electrode, a MgO tunnel barrier, and a Co50Fe50 upper electrode. The microfabricated CMS/MgO/Co50Fe50 MTJs exhibited relatively high tunnel magnetoresistance ratios of 90% at room temperature and 192% at 4.2 K. The bias voltage dependence of differential conductance (dI/dV) for the parallel and antiparallel magnetization configurations suggested the existence of a basic energy gap structure for the minority-spin band of the CMS electrode with an energy difference of about 0.4 eV between the bottom of the vacant minority-spin conduction band and the Fermi level.
  • H Hosoya, M Arita, K Hamada, Y Takahashi
    MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS 26 5-7 1146 - 1150 2006年07月 [査読無し][通常論文]
     
    Fe nanodots were grown on SrF2 (I 11) surfaces deposited on Si (111) substrates in a molecular beam epitaxy (MBE) system. The crystallographic and surface morphological characters were studied by reflection high-energy electron diffractometry (RHEED) and atomic force microscopy (AFM). The triangular terraces and step edges of SrF2 were formed at 600 degrees C, and its crystallinity was high in quality. Fe (I 11) layers with thicknesses between 0.5 and 5 nm were grown epitaxially on this SrF2 layer at room temperature (RT) with the help of electron beam exposure. In 1-nm thick Fe layers deposited at RT, the number density was about 2 x 10(12) cm(-2). At the end of this report, an epitaxial growth of the SrF2/Fe/SrF2 tri-layer on Si (I 11) is briefly described. (c) 2005 Elsevier B.V. All rights reserved.
  • M Arita, R Hirose, K Hamada, Y Takahashi
    MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS 26 5-7 776 - 781 2006年07月 [査読無し][通常論文]
     
    Conductance measurements of nanostructures with simultaneous transmission electron microscopy (TEM) were performed on thin insulating SrF2 films (3 nm thick) and Fe-SrF2 granular films (10 nm thick) deposited on tip-shaped An electrodes. By using a movable counter electrode, nanoscale regions were selected for investigation. Systematic measurements taken during the deformation of the SrF2, film by the counter-electrode provided a tunnelling barrier height of about 2.5 eV The conductance of Fe-SrF2 in nanoscale (similar to 500 nm(2)) showed the Coulomb staircase like characteristics at room temperature. The staircase period approximately corresponded to the value estimated from the geometry observed by TEM. The feasibility of this method is briefly described. (c) 2005 Elsevier B.V. All rights reserved.
  • T Kaizawa, T Oya, M Arita, Y Takahashi, JB Choi
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 45 6A 5317 - 5321 2006年06月 [査読無し][通常論文]
     
    We have fabricated a new single-electron device (SED) that has many nanodots. Although SEDs have the great advantages of small size and low power consumption, they should have small dots on the order of a few nanometers, which makes them difficult to fabricate. The proposed device uses many nanodots aligned as an array, on which many gate electrodes are attached so as to couple capacitively to underlying nanodots. Some of the gates are used as input gates of a logic-gate device. The others are control gates that are used to change the logic function of the device, such as from an AND gate to an XOR (exclusive OR) one. The principal operations have been demonstrated using numerical simulations.
  • T Ishikawa, T Marukame, K Matsuda, T Uemura, M Arita, M Yamamoto
    JOURNAL OF APPLIED PHYSICS 99 8 08J110-1-08J110-3  2006年04月 [査読無し][通常論文]
     
    Full-Heusler alloy Co2MnGe thin films were epitaxially grown on MgO (001) substrates using magnetron sputtering. The films were deposited at room temperature and subsequently annealed in situ at temperatures ranging from 400 to 600 degrees C. X-ray pole figure measurements for the annealed films showed (111) peaks with fourfold symmetry, which gives direct evidence that these films are epitaxial and crystallized in the L2(1) structure. Furthermore, cross-sectional transmission electron microscope images of a fabricated film indicated that it is single crystalline. The annealed films had sufficiently flat surface morphologies with roughnesses of about 0.26 nm rms at film thicknesses of 45 nm. The saturation magnetization of the annealed films was 4.49 mu(B)/f.u. at 10 K, corresponding to about 90% of the Slater-Pauling value for Co2MnGe. (C) 2006 American Institute of Physics.
  • M Yamamoto, T Marukame, T Ishikawa, K Matsuda, T Uemura, M Arita
    JOURNAL OF PHYSICS D-APPLIED PHYSICS 39 5 824 - 833 2006年03月 [査読無し][通常論文]
     
    Cobalt-based full-Heusler alloy thin films have recently attracted much interest as highly desirable ferromagnetic electrodes for spintronic devices because of the half-metallic ferromagnetic nature theoretically predicted for some of these alloys and because of their high Curie temperatures, which are well above room temperature (RT). In this study, Co-based full-Heusler alloy thin films of Co2Cr0.6Fe0.4Al (CCFA) and Co2MnGe (CMG) were epitaxially grown on MgO-buffered MgO (001) substrates using magnetron sputtering. The films were deposited at RT and subsequently annealed in situ at temperatures ranging from 400 to 600 degrees C. X-ray pole figure measurements of the CCFA films indicated that these films were epitaxial and crystallized in the B2 structure. X-ray pole figure measurements of the annealed CMG films showed (111) peaks with four-fold symmetry, which provides direct evidence that these films were epitaxial and crystallized in the L2(1) structure. Furthermore, cross-sectional transmission electron microscope images of a fabricated CMG film indicated that it was single-crystalline. The annealed films of CCFA and CMG had sufficiently flat surface morphologies with roughness of about 0.23 nm rms for 100 nm thick CCFA films and 0.26 nm rms for 45 nm thick CMG films. Using these epitaxially grown thin films, we fabricated fully epitaxial magnetic tunnel junctions (MTJs) consisting of a Co-based or full-Heusler thin film of either CCFA or CMG as a lower electrode, a MgO tunnel barrier and a Co50Fe50 (CoFe) upper electrode. All layers were successively deposited in an ultrahigh vacuum chamber through the combined use of magnetron sputtering and electron beam evaporation. Reflection high-energy electron diffraction patterns observed in situ for each layer during preparation clearly indicated that all layers grew epitaxially in both the CCFA/MgO/CoFe and CMG/MgO/CoFe MTJ layer structures. The microfabricated epitaxial CCFA/MgO/CoFe MTJs demonstrated relatively high tunnel magnetoresistance (TMR) ratios, for MTJs using a full-Heusler alloy, of 42% at RT and 74% at 55 K. On the other hand, the microfabricated epitaxial CMG/MgO/CoFe MTJs showed strongly temperature-dependent TMR characteristics with typical TMR ratios of 14% at RT and 70% at 7 K. These results confirm the promise of epitaxial MTJs as a key device structure for clarifying and utilizing the potentially high spin-polarization of Co-based full-Heusler alloy thin films.
  • M Arita, R Hirose, K Hamada, Y Takahashi
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 45 3B 1946 - 1949 2006年03月 [査読無し][通常論文]
     
    Tunnelling spectroscopy with simultaneous transmission electron microscopy (TEM) was applied to an Fe-MgO composite film in which the Fe nano-particles were sandwiched by two thin MgO layers and nanometer-scale double-barrier tunnel junctions were formed. Using a movable needle-shaped electrode, nano-regions were selected and the geometry of the particle system was deformed. The real-time and simultaneous experiments of the deformation, the tunnel measurement and the TEM observation made it possible to confirm the condition under which the Coulomb staircase clearly appears. The measured staircase period corresponded approximately to the value estimated from the geometry observed by TEM. Thus, the feasibility of this method was verified.
  • 量子ドットアレイを用いた多機能デバイスの特性シミュレーション
    信学技報 ED2005 13 - 18 2006年 [査読無し][通常論文]
  • 日本応用磁気学会誌 29 2 128 - 131 2005年 [査読無し][通常論文]
  • Feナノ微粒子系におけるコンダクタンス量子化のTEM内その場計測
    Materia Japan 43 12 990  2005年 [査読無し][通常論文]
  • R Hirose, M Arita, K Hamada, Y Takahashi, A Subagyo
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 44 24-27 L790 - L792 2005年 [査読無し][通常論文]
     
    A technique for measuring the conductance of a small number of particles during transmission electron microcopy (TEM) observation is demonstrated. By using a custom-designed TEM holder, an An tip was brought into contact with Fe nanodots contained in a SrF2 film deposited on another An tip. The conductance shows Coulomb-blockade-like characteristics even at room temperature.
  • 日本応用磁気学会誌 29 2 120 - 123 2005年 [査読無し][通常論文]
  • M Arita, K Hamada, A Okada, H Asano, M Matsui, T Shibayama
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 44 1A 304 - 308 2005年01月 [査読無し][通常論文]
     
    The appearance of forbidden reflections in the electron diffraction patterns of L0.7Ca0.3MnO3 was studied, which violates the Prima symmetry reported so far in X-ray and. neutron diffractometry studies. The forbidden reflections originate through the multiple diffraction process of a crystal slightly inclined from its zone axis. Under this diffraction condition, the corresponding superlattice contrasts in high resolution transmission electron microscopy images were reproduced in image simulations made without the assumption of symmetry reduction in the crystal.
  • Conductance Quantization of Nano-structured Materials Measured in TEM
    Proc. Symp. Adv. Res. Energy Tech. 2004 (CD-ROM) B3-1  2004年 [査読無し][通常論文]
  • Trans. Magn. Soc. Japan 4 9 - 12 2004年 [査読無し][通常論文]
  • R Hirose, M Arita, K Hamada, A Okada
    MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS 23 6-8 927 - 930 2003年12月 [査読無し][通常論文]
     
    Application of the ion-shadow sputter technique is proposed to produce tips used for the study of point contact as well as for scanning tunneling microscopy (STM). It is a sputtering technique using powders with low sputtering rate as the mask material. By this method, sharp and long tips could be produced for Si, Au, Fe, permalloy and invar. The tip length is typically more than 15 mum, and the radius of curvature is about 10-20 nm, or less. Furthermore, a nonmagnetic tip (e.g., Si) capped with a magnetic apex (300 nm Fe) has been produced. This type of tip is clearly useful for STM experiments in transmission electron microscopy (TEM). (C) 2003 Elsevier B.V. All rights reserved.
  • Changes in magnetic microstructure and resistivity of permalloy thin films
    Proc. Symp. Adv. Res. Ener. Technol. 2003 293 - 294 2003年 [査読無し][通常論文]
  • Electron Diffractometry of La0.7ca0.3MnO3M
    Proceedings for Symposium on Advanced Research of Energy Technology 2002 277 - 278 2002年 [査読無し][通常論文]
  • In-situ Experiment and Lorentz Microscopy on Ni-Fe Films
    Proc. Symp. Adv. Res. Energy Tech. 2001 415 - 416 2001年 [査読無し][通常論文]
  • イオンシャドー法による探針作製手法の開発
    Proc. Symp. Adv. Res. Energy Tech. 2001 399 - 404 2001年 [査読無し][通常論文]
  • Materia Japan 40 12 1017  2001年 [査読無し][通常論文]
  • Morphological Study of Cr smoke Particles with A15 Structure
    Philosophical Magazine A80 6 1597 - 1612 2001年 [査読無し][通常論文]
  • Ybエピタキシャル薄膜の作成とその酸化
    Proc. Symp. Adv. Res. Energy Tech. 2001 377 - 381 2001年 [査読無し][通常論文]
  • J. Magn. Magn. Mater. 84 84 - 90 2000年 [査読無し][通常論文]
  • Transmission Electron Microscopy of Interface Structures between La0.7Ca0.3MnO3 Thin Films and Substrates
    Proc. Symp. Adv. Res. Energy Technol. 2000 449 - 450 2000年 [査読無し][通常論文]
  • M Arita, R Takei, M Yoshida, K Hamada, A Okada, K Mukasa, H Takahashi
    INTERNATIONAL JOURNAL OF THE JAPAN SOCIETY FOR PRECISION ENGINEERING 33 3 215 - 217 1999年09月 [査読無し][通常論文]
  • M Arita, A Sasaki, K Hamada, A Okada, J Hayakawa, H Asano, M Matsui, H Takahashi
    JOURNAL OF ELECTRON MICROSCOPY 48 4 381 - 385 1999年 [査読無し][通常論文]
     
    The microstructure of La0.7Ca0.3MnO3 (LCMO) films grown on (001) surfaces of various cubic or pseudo-cubic substrates (MgO, SrTiO3, LaSrGaO4 and YAlO3) was studied by means of transmission electron microscopy. The epitaxy was mainly (001)(p)[100](p)//(001)(s)[100](s) (p: perovskile primitive cell; s: substrate). The film on MgO contained many planar defects and intergrown grains which originated at the substrate surface. The film on STO was composed of one crystallographic-type domain but having a twin structure, while films on the other substrates showed the 'three-domain' structure where the perovskite primitive lattice continued throughout the area observed.
  • K Hamada, M Chimura, R Arita, Ishida, I, A Okada
    JOURNAL OF ELECTRON MICROSCOPY 48 5 595 - 600 1999年 [査読無し][通常論文]
     
    Magnetic microstructures of NiFe/Cu/NiFe tri-layer films were observed by means of Lorentz microscopy. The in situ observations in the magnetic field were carried out by simply tilting the films inside a transmission electron microscope. Using the domain wall contrast and the ripple contrast as a guide, the magnetic microstructures of adjacent NiFe layers could be analysed separately. The change of the magnetic microstructure corresponded to the magnetization curve and the suitability of the present method was confirmed. The angle distribution of magnetic moments belonging to adjacent NiFe layers was determined in each Lorentz image, and it was expected that the magnetoresistance ratio changed place by place in the film.
  • M Arita, A Kuwahara, Y Yamada, M Doi, M Matsui
    THIN SOLID FILMS 318 1-2 180 - 185 1998年04月 [査読無し][通常論文]
     
    Microstructures of artificial superlattices of fcc-Fe/Cu (Au) having different magnetic properties have been studied by means of cross-sectional transmission electron microscopy (TEM). The superlattice made on a very flat substrate whose saturation magnetization was about 25 emu/g(Fe) constituted a flat film with the step of < 1 nm at the interface between Fe and Cu (Au). On the other hand, the film on a slightly rough substrate having a larger magnetization showed a wavy contrast with a width of several hundred nanometers and a height of several tens of nanometers reflecting the geometry of the substrate. At the interfaces a wavy contrast with a width of several tens of nanometers and a height of several nanometers was observed. The difference of the microstructures in these two samples was mainly this wavy geometry at the interface inside the superlattice. The observed microstructure must play an important role influencing the magnetic property of the superlattice. (C) 1998 Elsevier Science S.A.
  • 日本金属学会会報 37 5 396  1998年 [査読無し][通常論文]

書籍

  • Mesoscopic Materials and Clusters
    Kodansha/Springer 1999年

講演・口頭発表等

  • In-situ TEM observation of Cu-WOx CBRAM during gradual resistance decrease fot initialization  [通常講演]
    S. Muto, S. Sakai, A. Tsurumaki-Fukuchi, M. Arita, Y. Takahashi
    International Microprocesses and Nanotechnology Conference (MNC 2019) 2019年10月 口頭発表(一般)
  • Observation of field-induced resistive phase transition in Ca2RuO4 thin films  [通常講演]
    A. Tsurumaki-Fukuchi, K. Tsubaki, T. Katase, T. Kamiya, M. Arita, Y. Takahashi
    26th International Workshop on Oxide Electrtonics (IWOE) 2019年09月 ポスター発表
  • 固相エピタキシャル成長Ca2RuO4薄膜における電流依存金属絶縁体転移の観測  [通常講演]
    椿 啓司, 福地 厚, 片瀬 貴義, 神谷 利夫, 有田 正志, 高橋 庸夫
    第80回応用物理学会秋季学術講演会 2019年09月 口頭発表(一般)
  • AI応用を念頭においた抵抗変化メモリ動作のTEMその場観察  [通常講演]
    工藤昌輝, 松村晶, 宮崎宣幸, 遠堂敬史, 大多亮, 有田 正志, 福地厚, 高橋 庸夫
    2019年度微細構造解析プラットフォームシンポジウム 2019年09月 口頭発表(一般)
  • Failure and Recovery of Double-Layer CBRAM Studied  [通常講演]
    M. Arita, R. Ishikawa, K. Arima, A. Tsurumaki-Fukuchi, Y. Takahashi, M
    2019 Internat. Conf. Sol. Stat. Dev. Materials (SSDM2019) 2019年09月 ポスター発表
  • Nanofilaments in Ta-O ReRAM Bit Array Fabricated Using 40 nm CMOS Process  [招待講演]
    M. Arita, A. Tsurumaki-Fukuchi, Y. Takahashi, S. Muraoka, S. Ito, S. Yoneda
    2019 Internat. Conf. Sol. Stat. Dev. Materials (SSDM2019) 2019年09月 口頭発表(招待・特別)
  • Experimental and theoretical study on tunnel magnetocapacitance in Fe/MgF2  [通常講演]
    R. Msiska, S.Honjo, Y. Asai, M. Arita, A. Tsurumaki-Fukuchi, Y. Takahashi
    6th Japan-Korea International Symposium on Materials 2019年08月 ポスター発表
  • 電子デバイス評価のためのin-situ TEM試料の作製と評価  [通常講演]
    有馬克紀, 石川竜介, 福地 厚, 有田正志, 高橋庸夫, 工藤 昌輝, 松村 晶
    日本顕微鏡学会 第75回学術講演会 2019年06月 ポスター発表
  • In-situ TEM of CBRAM at initial decrease in resistance  [通常講演]
    S. Muto, S. Sakai, A. Tsurumaki-Fukuchi, M. Arita, Y. Takahashi
    The 6th International Symposium on Advanced Microscopy and Theoretical Calculations (AMTC6) 2019年06月 ポスター発表
  • Switching Current of Ta2O5 Based Resistive Analog Memories  [通常講演]
    Y. Li, A. Tsurumaki‐Fukuchi, M. Arita, Y. Takahashi, T. Morie
    2019 Silicon Nanoelectronics Workshop (SNW-2019) 2019年06月 口頭発表(一般)
  • Nanoscale filaments in Ta-O resistive RAM bit array: microscopy analysis and switching property  [通常講演]
    M. Arita, A. Tsurumaki-Fukuchi, Y. Takahashi, S. Muraoka, S. Ito, S. Yoneda
    2019 IEEE 11th International Memory Workshop (IMW 2019) 2019年05月 口頭発表(一般)
  • 40nm CMOS技術により作製したTa-O系抵抗変化メモリにおける導電フィラメント周辺の酸素分布  [招待講演]
    有田正志, 福地厚, 高橋庸夫, 村岡俊作, 伊藤理, 米田慎一
    電子情報通信学会集積回路研究会 2019年04月 口頭発表(招待・特別)
  • 製鋼スラグ中リン回収のための磁気分離における物理現象  [通常講演]
    長野真孟, 岩井一彦, 有田正志
    第177回日本鉄鋼協会春季講演大会 2019年03月 口頭発表(一般)
  • 単層Fe-MgF2グラニュラー薄膜単電子トランジスタにおける等周期クーロン振動特性の解析  [通常講演]
    瘧師 貴幸, 浅井 佑基, 福地 厚, 有田 正志, 高橋 庸夫
    第66回応用物理学会春季講演会 2019年03月 口頭発表(一般)
  • 高抵抗動作を目指したCu上部電極型Ta2O5-δ抵抗変化多値メモリ  [通常講演]
    李 遠霖, 福地 厚, 有田 正志, 高橋 庸夫, 森江 隆
    第66回応用物理学会春季講演会 2019年03月 口頭発表(一般)
  • 低電流動作時のCu/MoOx/Al2O3 CBRAMにおけるCu-CFの観察  [通常講演]
    石川 竜介, 有馬 克紀, 福地 厚, 有田 正志, 高橋 庸夫, 工藤 昌輝, 松村 晶
    第66回応用物理学会春季講演会 2019年03月 口頭発表(一般)
  • CBRAMのフォーミング過程におけるTEMその場観察  [通常講演]
    武藤恵, 酒井慎弥, 福地厚, 有田正志, 高橋 庸夫
    第66回応用物理学会春季学術講演会 2019年03月 口頭発表(一般)
  • 製鋼スラグ中リン濃縮相の磁気分離回収量に及ぼす見かけの磁化率の影響  [通常講演]
    長野真孟, 岩井一彦, 有田正志
    日本鉄鋼協会北海道支部冬季講演大会 2019年01月 口頭発表(一般)
  • 界面エンジニアリング効果によるPt/Nb:SrTiO3接合の伝導特性の制御  [通常講演]
    蔦佑輔, 福福地厚, 有田正志, 高橋庸夫
    第54回応用物理学会北海道支部学術講 2019年01月 口頭発表(一般)
  • Ag/WOx/Pt平面型CBRAMにおける金属イオン移動のTEMその場観察  [通常講演]
    酒井慎弥, 武藤恵, 福地厚, 有田正志, 高橋庸夫
    第54回応用物理学会北海道支部講演大会 2019年01月 口頭発表(一般)
  • 単層FeMgF2グラニュー単電子トンジスタにおける等周期クーロン振動の解析  [通常講演]
    瘧師貴幸, 浅井佑基, 福地厚, 有田正志, 高橋庸夫
    第54回応用物理学会北海道支部学術講演会 2019年01月 口頭発表(一般)
  • ダブルゲートFe-MgF2単電子トランジスタの作製と評価  [通常講演]
    瘧師貴幸, 浅井佑基, 福地厚, 有田 正志, 高橋庸夫
    第79回応用物理学会秋季学術講演会 2018年09月 口頭発表(一般)
  • 単層Fe-MgF2グラニュラー薄膜を用いた単電子トランジスタの特性評価  [通常講演]
    浅井佑基, 瘧師貴幸, 福地厚, 有田 正志, 高橋庸夫
    第79回応用物理学会秋季学術講演会 2018年09月 口頭発表(一般)
  • TaOx界面層を用いたPt/Nb:SrTiO3接合の伝導特性制  [通常講演]
    蔦佑輔, 福地厚, 有田正志, 高橋庸夫
    第79回応用物理学会秋季学術講演会 2018年09月 口頭発表(一般)
  • Cu上部電極を用いたTa2O5-δ抵抗変化型多値メモリ特性 の実現  [通常講演]
    李遠霖, 勝村玲音, Mika Grönroos, 福地厚, 有田正志, 高橋庸夫, 安藤秀幸, 森江隆
    第79回応用物理学会秋季学術講演会 2018年09月 口頭発表(一般)
  • Tunnel Magnetocapacitance in Single-layered Fe/MgF2 Granular Films  [通常講演]
    R. Msiska, S. Honjo, Y. Asai, M. Arita, A. Tsurumaki-Fukuchi, Y. Takahashi, N. Hoshino, T. Akutagawa, O. Kitakami, M. Fujioka, J. Nishii, H. Kaiju
    79th JSAP Autumn Meeting 2018 2018年09月 口頭発表(一般)
  • Study on Interfacial Redox Reactions of Tantalum as a Good Scavenger Material in ReRAM Devices  [通常講演]
    A. Tsurumaki‐Fukuchi, M. Arita, Y. Takahashi
    2018 Internat. Conf. Sol. Stat. Dev. Materials (SSDM2018) 2018年09月 口頭発表(一般)
  • Study on Tunnel Magnetocapacitance in Fe/MgF2 Nanogranular Films  [通常講演]
    R. Msiska, S. Honjo, Y. Asai, M. Arita, A. Tsurumaki-Fukuchi, Y. Takahashi, N. Hoshino, T. Akutagawa, O. Kitakami, M. Fujioka, J. Nishii, H. Kaiju
    第4回 マテリアルズ・インフォマティクス基礎研究会 2018年09月 口頭発表(一般)
  • In-situ electron microscopy to investigate resistive RAM operations  [招待講演]
    M. Arita, A. Tsurumaki-Fukuchi, Y. Takahashi
    Collaborative Conference on Materials Research (CCMR 2018) 2018年06月 口頭発表(招待・特別)
  • In-situ TEM investigation on instability of ReRAM switching  [通常講演]
    S. Muto, S. Sakai, A. Tsurumaki-Fukuchi, M. Arita, Y. Takahashi
    EMRS 2018 Spring Meeting 2018年06月 ポスター発表
  • Investigation for Multilevel Memory Capability of ReRAM using Ta2O5-δ Insulator  [通常講演]
    Y. Li, R. Katsumura, M. K. Grönroos, A. Tsurumaki‐Fukuchi, M. Arita, H. Andoh, T. Morie, Y. Takahashi
    2018 Silicon Nanoelectronics Workshop (SNW-2018) 2018年06月 ポスター発表
  • 電流経路TEM観察のための簡易型EBACシステムの試作  [通常講演]
    藤田順, 福地厚, 有田正志, 高橋庸夫
    日本顕微鏡学会 第74回学術講演会 2018年05月 ポスター発表
  • Oxygen distribution around filament in Ta-O resistive RAM fabricated using 40 nm CMOS technology  [通常講演]
    M. Arita, A. Tsurumaki-Fukuchi, Y. Takahashi, Z. Wei, S. Muraoka, S. Ito, S. Yoneda
    2018 IEEE 10th International Memory Workshop (IMW 2018) 2018年05月 口頭発表(一般)
  • 固相エピタキシャル成長法による常圧成長Ca2RuO4薄膜の伝導特性  [通常講演]
    安田将太, 福地厚, 有田正志, 高橋庸夫
    第65回応用物理学会春季学術講演会 2018年03月 ポスター発表
  • 酸素欠陥を導入したTa2O5-δ抵抗変化型多値メモリ特性の検討  [通常講演]
    李遠霖, 勝村玲音, Mika Gronroos, 福地厚, 有田正志, 高橋庸夫, 安藤秀幸, 森江隆
    第65回応用物理学会春季学術講演会 2018年03月 口頭発表(一般)
  • CBRAMの動作不安定性に関するTEMその場観察  [通常講演]
    武藤恵, 酒井慎弥, 福地厚, 有田正志, 高橋庸夫
    第65回応用物理学会春季学術講演会 2018年03月 口頭発表(一般)
  • 電気特性評価用TEMその場観察システムの開発と応用 〜MANBOU登録装置を中心として〜  [通常講演]
    有田正志, 高橋庸夫
    第3回分析TEMユーザーズミーティング 2018年03月 口頭発表(招待・特別)
  • 単層Fe-MgF2グラニュラー薄膜を用いた単電子トランジスタの電気特性  [通常講演]
    浅井佑基, 本庄周作, 瘧師貴幸, 福地 厚, 有田正志, 高橋庸夫
    電子情報通信学会電子デバイス研究会 2018年02月 口頭発表(一般)
  • 固相エピタキシャル成長法による金属性Ca2RuO4薄膜の作製  [通常講演]
    安田将太, 福地厚, 有田正志, 高橋庸夫
    第53回応用物理学会北海道支部学術講演会 2018年01月 口頭発表(一般)
  • 反応性スパッタ法により作製したTiOx系ReRAMの多値特性  [通常講演]
    福本泰士, 福地厚, 有田正志, 高橋庸夫
    第53回応用物理学会北海道支部学術講演会 2018年01月 口頭発表(一般)
  • ナノギャップ型抵抗変化メモリにおけるギャップ間金属移動の動的観察  [通常講演]
    武藤恵, 酒井慎弥, 福地厚, 有田正志, 高橋庸夫
    日本顕微鏡学会北海道支部学術講演会 2017年12月 口頭発表(一般)
  • Investigations on Oxygen Scavenging Effect at Metal/Oxide Interfaces for Reliable Memory Applications  [通常講演]
    R. Nakagawa, A. Tsurumaki-Fukuchi, M. Arita, Y. Takahashi
    2017 MRS Fall Meeting & Exhibit 2017年11月 口頭発表(一般)
  • ReRAM Switching in Planar-Type Structures of Ag/WOx/Pt Studied by in-Situ TEM,  [通常講演]
    S. Sakai, S. Muto, A. Tsurumaki-Fukuchi, M. Arita, Y. Takahashi
    29th Internat. Microprocesses and Nanotechno. Conf. (MNC 2017) 2017年11月 口頭発表(一般)
  • Single Electron Transistor Characteristics of Fe-MgF2 Single-Layer Granular Films  [通常講演]
    Y. Asai, S. Honjo, A. Tsurumaki-Fukuchi, M. Arita, Y. Takahashi
    29th Internat. Microprocesses and Nanotechno. Conf. (MNC 2017) 2017年11月 口頭発表(一般)
  • Realization of Analog Memory Using Ta2O5 Based ReRAM for the Application of Neural Network  [通常講演]
    Y. Li, R. Katsumura, M. K. Gronroos, A. Tsurumaki-Fukuchi, M. Arita, H. Andoh, T. Morie, Y. Takahashi, S. Samukawa
    14th International Conference on Flow Dynamics (ICFD2017) 2017年11月 ポスター発表
  • In-Situ Electron Microscopy of Cu Movement in MoOx/Al2O3 Bilayer CBRAM during Cyclic Switching Process  [通常講演]
    R. Ishikawa, S. Hirata, A. Tsurumaki-Fukuchi, M. Arita, Y. Takahashi, M. Kudo, S. Matsumura
    232nd ECS Meeting 2017年10月 口頭発表(一般)
  • Observation of Conductive Filament in CBRAM at Switching Moment  [通常講演]
    S. Muto, R. Yonesaka, A. Tsurumaki-Fukuchi, M. Arita, Y. Takahashi
    232nd ECS Meeting 2017年10月 口頭発表(一般)
  • Evaluation of Coupled Triple Quantum Dots with Compact Device Structure  [招待講演]
    Y. Takahashi, T. Uchida, A. Tsurumaki-Fukuchi, M. Arita, A. Fujiwara
    232nd ECS Meeting 2017年10月 口頭発表(招待・特別)
  • In-situ Observation of Cu Residuals in Resistance Switching Failure of MoOx/Al2O3 CBRAM  [通常講演]
    M. Arita, R. Ishikawa, S. Hirata, A. Turumaki-Fukuchi, Y. Takahashi
    2017 Internat. Conf. Sol. Stat. Dev. Mater. (SSDM 2017) 2017年09月 口頭発表(一般)
  • Fe-MgF2グラニュラー膜における単電子トランジスタ特性の評価  [通常講演]
    浅井 佑基, 本庄 周作, 福地厚, 有田正志, 高橋庸夫
    第78回応用物理学会秋季学術講演会 2017年09月 口頭発表(一般)
  • ナノスケールReRAM/CBRAMデバイスのIn-situ TEM解析  [招待講演]
    高橋 庸夫, 福地 厚, 有田 正志
    第78回応用物理学会秋季学術講演会 2017年09月 口頭発表(招待・特別)
  • Ag/WOx/Pt平面型抵抗変化メモリのTEMその場観察  [通常講演]
    酒井 慎弥, 武藤 恵, 福地 厚, 有田 正志, 高橋 庸夫
    第78回応用物理学会秋季学術講演会 2017年09月 口頭発表(一般)
  • 金属/酸化物接合における界面金属層による酸素欠陥生成効果の評価  [通常講演]
    中川良祐, 福地厚, 有田正志, 高橋庸夫
    第78回応用物理学会秋季学術講演会 2017年09月 口頭発表(一般)
  • RRAM Device Operation Investigated using In-situ TEM  [招待講演]
    M. Arita, A. Tsurumaki-Fukuchi, Y. Takahashi
    Non-Volatile Memory Technology Symposium 2017 (NVMTS2017) 2017年08月 口頭発表(招待・特別)
  • Evaluation of Multilevel Memory Capability of ReRAM Using Ta2O5 Insulator and Different Electrode Materials  [通常講演]
    Y. Li, R. Katsumura, M. K. Grönroos, A. Tsurumaki‐Fukuchi, M. Arita, H. Andoh, T. Morie, Y. Takahashi
    2017 Silicon Nanoelectronics Workshop 2017年06月 ポスター発表
  • In-situ TEM法によるMoOx/Al2O3 抵抗変化メモリのデバイス劣化観察  [通常講演]
    石川 竜介, 平田 周一郎, 福地 厚, 有田 正志, 高橋 庸夫
    日本顕微鏡学会 第73回学術講演会 2017年06月 口頭発表(一般)
  • Associative Search Using Pseudo-Analog Memristors  [通常講演]
    M. Laiho, M. Grönroos, J. H. Poikonen, E. Lehtonen, R. Katsumura, A. T.-Fukuchi, M. Arita, Y. Takahashi
    , 2017 IEEE International Symposium on Circuits & Systems (ISCAS-2017) 2017年05月 口頭発表(一般)
  • 次世代半導体メモリ実現に向けたTEMその場観察を用いた故障メカニズム解析法の確立  [通常講演]
    工藤 昌輝, 松村 晶, 宮崎 宣幸, 遠堂 敬史, 大多 亮, 有田 正志, 福地 厚, 高橋 庸夫
    日本顕微鏡学会 第73回学術講演会 2017年05月 口頭発表(一般)
  • Microstructural Evolution during Switching Operation of Resistive RAM  [招待講演]
    M. Arita, A. Tsurumaki-Fukuchi, Y. Takahashi
    BIT's 5th Annual Conference of AnalytiX 2017年03月 口頭発表(招待・特別)
  • 超平坦a-TaOx薄膜を用いた抵抗変化メモリ動作における導電性フィラメントの直接観察  [通常講演]
    福地 厚, 有田 正志, 片瀬 貴義, 太田 裕道, 高橋 庸夫
    第64回応用物理学会春季学術講演会 2017年03月 口頭発表(一般)
  • 反応性スパッタ法により作製したTiOx系ReRAMの電気特性評価  [通常講演]
    福本 泰士, 勝村 玲音, 福地 厚, 有田 正志, 高橋 庸夫
    第64回応用物理学会春季学術講演会 2017年03月 口頭発表(一般)
  • MoOx/Al2O3 CBRAMの繰返しスイッチ過程におけるCu移動の直接観察  [通常講演]
    平田 周一郎, 石川 竜介, 福地 厚, 有田 正志, 高橋 庸夫, 工藤 昌輝, 松村 晶
    第64回応用物理学会春季学術講演会 2017年03月 口頭発表(一般)
  • 異なる上部電極を有するTa2O5抵抗変化型メモリの多値特性評価  [通常講演]
    勝村 玲音, 李 遠霖, Mika Grönroos, 福地 厚, 有田 正志, 高橋 庸夫, 安藤 秀幸, 森江 隆
    第64回応用物理学会春季学術講演会 2017年03月 口頭発表(一般)
  • 多並列接続Cu-MoOx-Al抵抗変化型メモリのアナログメモリ動作  [通常講演]
    原田 將敬, 安藤 秀幸, 森江 隆, 勝村 玲音, 福地 厚, 有田 正志, 高橋 庸夫
    第64回応用物理学会春季学術講演会 2017年03月 口頭発表(一般)
  • Fe-絶縁体グラニュラーデバイスの電気特性  [通常講演]
    有田正志, 福地厚, 高橋庸夫
    電子工学研究所共同研究プロジェクト研究会 2017年03月 口頭発表(一般)
  • コンパクトなシリコン三重量子ドットの作製と評価  [通常講演]
    内田貴史, 福地厚, 有田正志, 藤原聡, 高橋庸夫
    電子情報通信学会電子デバイス研究会 2017年02月 口頭発表(一般)
  • 酸素欠陥導入層を用いた抵抗変化メモリにおける界面反応過程の評価  [通常講演]
    中川 良祐, 福地 厚, 有田 正志, 高橋 庸夫
    第52回応用物理学会北海道支部学術講演会 2017年01月 口頭発表(一般)
  • Investigation of resistive switching memory effect in a-TaOx films with atomically flat surface  [通常講演]
    A. Tsurumaki-Fukuchi, M. Arita, T. Katase, H. Ohta, Y. Takahashi
    24th International Colloquium on Scanning Probe Microscopy 2016年12月 ポスター発表
  • 電子デバイスの透過電子顕微鏡オペランド解析と応用  [通常講演]
    高橋庸夫, 有田正志
    第45回 薄膜・表面物理 基礎講座(2016)「オペランド分光解析 ~動作環境下での解析技術の新展開~」 2016年11月 口頭発表(招待・特別)
  • Fabrication of single-electron transistor made of Fe-dot film and its characteristics  [通常講演]
    S. Honjo, T. Uchida, A. Tsurumaki-Fukuchi, M. Arita, Y. Takahashi
    28th Internat. Microprocesses and Nanotechno. Conf. 2016年11月 ポスター発表
  • 抵抗変化メモリの動作解析に向けたTEM その場計測  [通常講演]
    有田正志, 高橋庸夫
    日本顕微鏡学会その場観察研究部会 第1 回(2016 年)研究討論会 2016年11月 口頭発表(招待・特別)
  • Ananlog Memory Operated by MOSFET and MoOx Resistive Random Access Memory  [通常講演]
    M. Jo, R. Katsumura, A. Tsurumaki-Fukuchi, M. Arita, Y. Takahashi, H. Ando, T. Morie, S. Samukawa
    13th International Conference on Flow Dynamics (ICFD2016) 2016年10月 ポスター発表
  • Spike-Based Neural Learning Hardware Using a Resistance Change Memory Device Toward Brain-Like Systems with Nanostructures  [通常講演]
    H. Ando, K. Tomizaki, T. Tohara, T. Morie, A. Tsurumaki-Fukuchi, M. Arita, Y. Takahashi, S. Samukawa
    13th International Conference on Flow Dynamics (ICFD2016) 2016年10月 ポスター発表
  • Switching operation of double-layer conductive bridging RAM investigated using in-situ transmission electron microscopy  [通常講演]
    M. Arita, S. Hirata, A. Takahashi, T. Hiroi, M. Jo, A. Tsurumaki-Fukuchi, Y. Takahashi
    2016 Internat. Conf. Sol. Stat. Dev. Mater. 2016年09月 口頭発表(一般)
  • エレクトロマイグレーションによるCuナノギャップ電極の作製と応用  [通常講演]
    米坂瞭太, 越智隼人, 村上暢介, 有田正志, 高橋庸夫
    第75回応用物理学会学術講演会 2014年09月 口頭発表(一般)
  • Cu/MoOx/TiN ReRAMの初期スイッチ過程における導電フィラメント  [通常講演]
    有田正志, 大野裕輝, 工藤昌輝, 高橋庸夫
    第75回応用物理学会学術講演会 2014年09月 口頭発表(一般)
  • Si単電子トランジスタにおける励起準位の分類  [通常講演]
    佐藤光, 内田貴史, 吉岡勇, 有田正志, 藤原聡, 高橋庸夫
    第75回応用物理学会学術講演会 2014年09月 口頭発表(一般)
  • 3端子ナノドットアレイの高機能の創出(2)  [通常講演]
    吉岡勇, 内田貴史, 佐藤光, 有田正志, 藤原聡, 高橋庸夫
    第75回応用物理学会学術講演会 2014年09月 口頭発表(一般)
  • マルチゲートSi単電子トランジスタを用いたpotential barrierの電圧制御  [通常講演]
    内田貴史, 吉岡勇, 佐藤光, 有田正志, 藤原聡, 高橋庸夫
    第75回応用物理学会学術講演会 2014年09月 ポスター発表
  • Growth and Shrinkage of Conductive Filament in Cu/MoOx ReRAMs Observed by Means of In-Situ TEM  [通常講演]
    M. Arita, Y. Ohno, M. Kudo, Y. Takahashi
    2014 Internat. Conf. Sol. Stat. Dev. Mater 2014年09月 口頭発表(一般) Tsukuba, Japan
  • Evolution of conductive filaments in Cu/MoOx CBRAM observed by means of in-situ TEM  [招待講演]
    M. Arita, Y. Ohno, M. Kudo, Y. Takahasi
    6th IEEE Internat. Nanoelectro. Conf. 2014 2014年07月 口頭発表(招待・特別) Sapporo
  • Magnetoresistance and microstructure of fe-MgF2 single layer granular films  [通常講演]
    T. Yokono, E. Sato, Y. Murakami, M. Arita, Y. Takahashi
    6th IEEE Internat. Nanoelectro. Conf. 2014 2014年07月 ポスター発表
  • In-situ observation of electromigration-induced atomic steps movement  [通常講演]
    Y. Murakami, R. Yonesaka, K. Hamada, M. Arita, Y. Takahashi
    6th IEEE Internat. Nanoelectro. Conf. 2014 2014年07月 ポスター発表
  • Fabrication of Cu nanogaps by electromigration and its application  [通常講演]
    T. Yonesaka, H. Ochi, Y. Murakami, M. Arita, Y. Takahashi
    6th IEEE Internat. Nanoelectro. Conf. 2014 2014年07月 ポスター発表
  • Real time transmission electronmicroscopy observation of Cu/MoOx ReRAMs  [通常講演]
    M. Kudo, Y. Ohno, T. Hiroi, K. Hamada, M. Arita, Y. Takahashi
    6th IEEE Internat. Nanoelectro. Conf. 2014 2014年07月 ポスター発表
  • Switching chracteristics of Cu-MoOx ReRAM  [通常講演]
    T. Hiroi, A. Nakane, T. Fujimoto, M. Arita, H. Ando, T. Morie, Y. Takahashi
    6th IEEE Internat. Nanoelectro. Conf. 2014 2014年07月 ポスター発表
  • Study on in-situ TEM observation of WOx ReRAMs with Cu top electrodes  [通常講演]
    A. Takahashi, Y. Ohno, M. Kudo, A. Nakane, M. Arita, Y. Takahashi
    6th IEEE Internat. Nanoelectro. Conf. 2014 2014年07月 ポスター発表
  • Resistance switching of WOx prepared by reactive sputtering at room temperature  [通常講演]
    A. Nakane, T. Hiroi, M. Kudo, M. Arita, H. Ando, T. Morie, Y. Takahashi
    6th IEEE Internat. Nanoelectro. Conf. 2014 2014年07月 ポスター発表
  • High-frequency operation of Si single-electron transistor beyond cutoff by the use of rectifying effect  [招待講演]
    Y. Takahashi, H. Takenaka, A. Fujiwara, M. Arita
    6th IEEE Internat. Nanoelectro. Conf. 2014 2014年07月 口頭発表(招待・特別) Sapporo
  • Double-quandum-dot Si single-electron transistor with multiple gates  [通常講演]
    T. Uchida, I. Yoshioka, H. Satoh, M. Arita, A. Fujiwara, Y. Takahashi
    6th IEEE Internat. Nanoelectro. Conf. 2014 2014年07月 ポスター発表
  • The research of excited states in Si-SET  [通常講演]
    H. Satoh, T. Uchida, I. Yoshioka, A. Fujiwara, M. Arita, Y. Takahashi
    6th IEEE Internat. Nanoelectro. Conf. 2014 2014年07月 ポスター発表
  • Highly functionality of three-terminals nanodot array  [通常講演]
    I. Yoshioka, H. Satoh, T. Uchida, A. Fujiwara, M. Arita, Y. Takahashi
    6th IEEE Internat. Nanoelectro. Conf. 2014 2014年07月 ポスター発表 Sapporo
  • Real-time Resistive Switching of Cu/MoOx ReRAM Observed in Transmission Electron Microscope  [通常講演]
    M. Kudo, Y. Ohno, T. Hiroi, T. Fujimoto, K. Hamada, M. Arita, Y. Takahashi
    2014 IEEE Silicon Nanoelectronics Workshop 2014年06月 口頭発表(一般) Honolulu, USA
  • Highly Functional Three-Teminal Nanodot Array Device with Almost Independent Input Gates  [通常講演]
    I. Yoshioka, T. Uchida, M. Arita, A. Fujiwara, Y. Takahashi
    2014 IEEE Silicon Nanoelectronics Workshop 2014年06月 ポスター発表 Honolulu, USA
  • Tunable Coupling Capacitance of Double-Quantum-dot Single-Electron Transistor with Multiple Gates  [通常講演]
    T. Uchida, I. Yoshioka, H. Sato, M. Arita, A. Fujiwara, Y. Takahashi
    2014 IEEE Silicon Nanoelectronics Workshop 2014年06月 ポスター発表 Honolulu, USA
  • Dynamical observation of Cu/MoOx resistive RAM  [通常講演]
    M. Arita, Y. Ohno, M. Kudo, Y. Murakami, Y. Takahashi
    EMRS 2014 Spring Meeting 2014年05月 口頭発表(一般) Lille, France
  • ARITA Masashi, TAKAHASHI Yasuo
    応用物理学会春季学術講演会(英語シンポ) 2014年03月 口頭発表(招待・特別)
  • 大野裕輝, 廣井孝弘, 工藤昌輝, 浜田弘一, 有田正志, 高橋庸夫
    日本金属学会講演概要(CD-ROM) 2014年03月
  • 横野示寛, 佐藤栄太, 村上暢介, 有田正志, 高橋庸夫
    日本金属学会講演概要(CD-ROM) 2014年03月
  • 高橋謙仁, 大野裕輝, 中根明俊, 工藤昌輝, 浜田弘一, 有田正志, 高橋庸夫
    応用物理学会春季学術講演会講演予稿集(CD-ROM) 2014年03月
  • 工藤昌輝, 大野裕輝, 廣井孝弘, 藤本天, 浜田弘一, 有田正志, 高橋庸夫
    応用物理学会春季学術講演会講演予稿集(CD-ROM) 2014年03月
  • 廣井孝弘, 中根明俊, 藤本天, 有田正志, 高橋庸夫, 安藤秀幸, 森江隆
    応用物理学会春季学術講演会講演予稿集(CD-ROM) 2014年03月
  • 村上暢介, 有田正志, 高橋庸夫
    応用物理学会春季学術講演会講演予稿集(CD-ROM) 2014年03月
  • 吉岡勇, 内田貴史, 佐藤光, 有田正志, 藤原聡, 高橋庸夫
    応用物理学会春季学術講演会講演予稿集(CD-ROM) 2014年03月
  • 中根明俊, 廣井孝弘, 有田正志, 高橋庸夫, 安藤秀幸, 森江隆
    応用物理学会春季学術講演会講演予稿集(CD-ROM) 2014年03月
  • 内田貴史, 吉岡勇, 佐藤光, 有田正志, 藤原聡, 高橋庸夫
    応用物理学会春季学術講演会講演予稿集(CD-ROM) 2014年03月
  • Cu/MoOx抵抗変化メモリのスイッチ動作における導電フィラメントの直接観察  [通常講演]
    大野裕輝, 廣井孝弘, 工藤昌輝, 浜田弘一, 有田正志, 高橋庸夫
    電子情報通信学会電子デバイス研究会 2014年02月 口頭発表(一般) 札幌
  • 極薄Fe‐MgF2 グラニュラー膜の作製と電気特性  [通常講演]
    佐藤栄太, 横野示寛, 石川琢磨, 有田正志, 高橋庸夫
    日本金属学会北海道支部講演会 2014年01月 口頭発表(一般) 札幌
  • Cu/MoOx 構造の熱処理によるCu の移動  [通常講演]
    藤本天, 廣井孝弘, 中根明俊, 大野裕輝, 有田正志, 高橋庸夫
    日本金属学会北海道支部講演会 2014年01月 口頭発表(一般) 札幌
  • Si 単電子トランジスタ特性における2次元励起状態  [通常講演]
    佐藤光, 内田貴史, 吉岡勇, 有田 正志, 高橋 庸夫
    第49回応用物理学会北海道支部講演大会 2013年12月 口頭発表(一般) 札幌
  • Double-Dot Si Single-Electron Transistor with Tunable Coupling Capacitance  [通常講演]
    T. Uchida, M. Arita, A. Fujiwara, S. Samukawa, Y. Takahashi
    Tenth International Conference on Flow Dynamics 2013年11月 ポスター発表 Sendai
  • In Situ TEM Observation of Cu/MoOx ReRAM Switching  [通常講演]
    M. Kudo, Y. Ohno, K. Hamada, M. Arita, Y. Takahashi
    224th ECS Meeting 2013年10月 口頭発表(一般) San Francisco, USA
  • 横野示寛, 佐藤栄太, 浜田弘一, 有田正志, 高橋庸夫
    日本金属学会講演概要(CD-ROM) 2013年09月 ポスター発表
  • 本田佑輔, LI G.‐f, LIU H.‐x, 有田正志, 松田健一, 植村哲也, 山本眞史, 齊藤敏明, 三浦良雄, 白井正文
    日本磁気学会学術講演概要集 2013年09月
  • 大野裕輝, 工藤昌輝, 浜田弘一, 有田正志, 高橋庸夫
    日本金属学会講演概要(CD-ROM) 2013年09月
  • 村上暢介, 越智隼人, 浜田弘一, 有田正志, 高橋庸夫
    応用物理学会秋季学術講演会講演予稿集(CD-ROM) 2013年08月
  • 中根明俊, 山田徹, HACKENBERGER K, 高見澤圭佑, 廣井孝弘, 有田正志, 高橋庸夫
    応用物理学会秋季学術講演会講演予稿集(CD-ROM) 2013年08月
  • 越智隼人, 村上暢介, 浜田弘一, 有田正志, 高橋庸夫
    応用物理学会秋季学術講演会講演予稿集(CD-ROM) 2013年08月
  • 工藤昌輝, 大野裕輝, 浜田弘一, 有田正志, 高橋庸夫
    応用物理学会秋季学術講演会講演予稿集(CD-ROM) 2013年08月
  • 廣井孝弘, 中根明俊, SRIVIRIYAKUL Thana, 高見澤圭佑, 有田正志, 高橋庸夫
    応用物理学会秋季学術講演会講演予稿集(CD-ROM) 2013年08月
  • 内田貴史, 吉岡勇, 有田正志, 藤原聡, 高橋庸夫
    応用物理学会秋季学術講演会講演予稿集(CD-ROM) 2013年08月
  • 吉岡勇, 内田貴史, 佐藤光, 有田正志, 藤原聡, 高橋庸夫
    応用物理学会秋季学術講演会講演予稿集(CD-ROM) 2013年08月
  • Double-quantum-dot Si single-electron transistor by PADOX  [通常講演]
    T. Uchida, M. Arita, A. Fujiwara, Y. Takahashi
    2013 Internat. Conf. Adv. Nano Res. 2013年08月 口頭発表(一般) Seoul, Korea
  • In-situ TEM observation of gold nanogaps by electromigration in gold nanowire  [通常講演]
    Y. Murakami, H. Ochi, M. Arita, K. Hamada, Y. Takahashi
    2013 Internat. Conf. Adv. Nano Res. (ICANR13) 2013年08月 口頭発表(一般) Seoul, Korea
  • In-situ TEM Observation on Cu/MoOx Resistive Switching RAM  [通常講演]
    M. Kudo, Y. Ohno, K. Hamada, M. Arita, Y. Takahashi
    2013 Internat. Conf. Adv. Nano Res. (ICANR13) 2013年08月 口頭発表(一般) Seoul, Korea
  • The Action of the Grain Boundary to the Narrowing Rate of Gold Nanowires by Electromigration  [通常講演]
    Y. Murakami, H. Ochi, M. Arita, K. Hamada, Y. Takahashi
    12th Asia Pacific Phy. Conf. (APPC12) 2013年07月 口頭発表(一般) Chiba
  • Observation of Resistive Switching on Cu/MoOx ReRAMs  [通常講演]
    M. Kudo, Y. Ohno, K. Takamizawa, K. Hamada, M. Arita, Y. Takahashi
    12th Asia Pacific Phy. Conf. (APPC12) 2013年07月 ポスター発表 Chiba
  • Double-dot Si single-electron transistor with tunable coupling capacitive by the number of electrons in the dot  [通常講演]
    T. Uchida, H. Takenaka, I. Yoshioka, M. Arita, A. Fujiwara, Y. Takahashi
    2013 Silicon Nanoelectronics Workshop 2013年06月 ポスター発表 Kyoto
  • Excited states of double-gate Si single-electron transistors in the few electron regime  [通常講演]
    I. Yoshioka, T. Uchida, M. Arita, A. Fujiwara, Y. Takahashi
    2013 Silicon Nanoelectronics Workshop 2013年06月 ポスター発表
  • Cu/MoOx抵抗変化メモリのTEMその場観察  [通常講演]
    有田正志, 大野裕輝, 工藤昌輝, 高橋庸夫
    日本顕微鏡学会第70回学術講演会 2013年05月 口頭発表(一般) 千葉
  • 有田正志, 村上暢介, 浜田弘一, 高橋庸夫
    日本金属学会講演概要(CD-ROM) 2013年03月
  • 大野裕輝, 工藤昌輝, 高見澤圭佑, 浜田弘一, 有田正志, 高橋庸夫
    日本金属学会講演概要(CD-ROM) 2013年03月
  • 村上暢介, 越智隼人, 有田正志, 浜田弘一, 高橋庸夫, 竹田精治
    応用物理学会春季学術講演会講演予稿集(CD-ROM) 2013年03月
  • 内田貴史, 竹中浩人, 吉岡勇, 有田正志, 藤原聡, 高橋庸夫
    応用物理学会春季学術講演会講演予稿集(CD-ROM) 2013年03月
  • 越智隼人, 村上暢介, 浜田弘一, 有田正志, 高橋庸夫
    応用物理学会春季学術講演会講演予稿集(CD-ROM) 2013年03月
  • 吉岡勇, 竹中浩人, 内田貴史, 有田正志, 藤原聡, 高橋庸夫
    応用物理学会春季学術講演会講演予稿集(CD-ROM) 2013年03月
  • 工藤昌輝, 大野裕輝, 高見澤圭佑, 浜田弘一, 有田正志, 高橋庸夫
    応用物理学会春季学術講演会講演予稿集(CD-ROM) 2013年03月
  • 内田貴史, 竹中浩人, 吉岡勇, 有田正志, 藤原聡, 高橋庸夫
    電子情報通信学会技術研究報告 2013年02月
  • 越智隼人, 村上暢介, 浜田弘一, 有田正志, 高橋庸夫
    応用物理学会北海道支部・日本光学会北海道地区合同学術講演会講演予稿集 2013年01月
  • 高見澤圭佑, 川西敬仁, 有田正志, 高橋庸夫
    応用物理学会北海道支部・日本光学会北海道地区合同学術講演会講演予稿集 2013年01月
  • G-1-6:Direct Observation of Microstructure Changes Arising from Electromigration  [通常講演]
    Y. Murakami, M. Arita, K. Hamada, Y. Takahashi
    2012 Internat. Conf. Sol. Stat. Dev. Mater., 2012年09月 口頭発表(一般)
  • CRF-53 :High-Frequency Characteristics of Si Single-Electron Transistor  [通常講演]
    Takenaka, M. Shinohara, T. Uchida, M. Arita, S. Sawamura, Y. Takahashi
    IFS Collaborative Research Forum (AFI/TFI-2012), 2012年09月 口頭発表(一般)
  • 14a-F4-5:多数ゲートを有するSi単電子トランジスタの少数電子系の特性評価  [通常講演]
    内田貴史, 竹中浩人, 吉岡勇, 有田正志, 藤原聡, 高橋庸夫
    第73回応用物理学会学術講演会 2012年09月 口頭発表(一般)
  • 14a-F4-6:Si単電子トランジスタの高周波応答特性(2),  [通常講演]
    竹中浩人, 内田貴史, 吉岡勇, 有田正志, 藤原聡, 猪川洋, 高橋庸夫
    第73回応用物理学会学術講演会 2012年09月 口頭発表(一般)
  • 12p-PA5-7:エレクトロマイグレーションによる細線形状と結晶構造変化の直接観察  [通常講演]
    村上暢介, 有田正志, 浜田弘一, 高橋庸夫
    第73回応用物理学会学術講演会 2012年09月 ポスター発表
  • 11a-PA1-5:上部電極を有するTEMその場観察ReRAM試料における電気特性評価  [通常講演]
    工藤昌輝, 大野裕輝, 浜田弘一, 有田正志, 高橋康夫
    第73回応用物理学会学術講演会 2012年09月 ポスター発表
  • 6-4: High-frequency properties of Si single-electron transistor  [通常講演]
    H. Takenaka, M. Shinohara, T. Uchida, M. Arita, A. Fujiwara, Y. Ono, K. Nishiguchi, H. Inokawa, Y. Takahashi
    Silicon Nanoelectronics Workshop (SNW), 2012 IEEE 2012年06月 口頭発表(一般)
  • L8P-27: Preparation of ReRAM samples for in-situ TEM experiments  [通常講演]
    M. Kudo, Y. Ohno, T. Fujii, K. Hamada, M. Arita, Y. Takahashi
    E-MRS 2012 Spring Meeting 2012年05月 ポスター発表
  • L8P-34:Magnetoresistance of MgF2/Fe/MgF2 trilayer composed of Fe nano-dots  [通常講演]
    T. Ishikawa, M. Arita, E. Sato, Y. Takahashi
    E-MRS 2012 Spring Meeting 2012年05月 ポスター発表
  • X-P-10 :In-situ TEM observation of microstructure transition in Au wire caused by electromigration  [通常講演]
    Y. Murakami, M. Arita, K. Hamada, Y. Takahashi
    E-MRS 2012 Spring Meeting, , 2012年05月 ポスター発表
  • MgF2/Feナノドット/MgF2薄膜における電気伝導特性  [通常講演]
    石川琢磨, 佐藤栄太, 浜田弘一, 有田正志, 高橋庸夫
    第59回春季応用物理学会 2012年03月 口頭発表(一般)
  • TEM-STMを用いたReRAMスイッチング現象のその場観察  [招待講演]
    有田正志, 高橋庸夫
    ReRAMワークショップ(元素戦略プロジェクトNIMSチーム) 2012年03月 口頭発表(招待・特別)
  • Si単電子トランジスタのバックゲート電圧によるゲート容量の変化  [通常講演]
    内田貴史, 篠原迪人, 竹中浩人, Andres Jose, 有田正志, 藤原 聡, 高橋庸夫
    第59回春季応用物理学会 2012年03月 口頭発表(一般)
  • 17p-A1-7:Si単電子トランジスタの高周波応答特性  [通常講演]
    竹中浩人, 篠原迪人, 内田貴史, 有田正志, 藤原聡, 高橋庸夫
    第59回春季応用物理学会 2012年03月 口頭発表(一般)
  • 抵抗変化メモリ動作のTEM その場観察を念頭においた試料作製法の開発  [通常講演]
    工藤昌輝, 大野裕輝, 藤井孝史, 浜田弘一, 有田正志, 高橋庸夫
    第59回春季応用物理学会 2012年03月 口頭発表(一般)
  • 反応性スパッタにより作製したMoOx薄膜の抵抗スイッチ特性  [通常講演]
    高見澤圭佑, 川西敬仁, 藤井孝史, 浜田弘一, 有田正志, 高橋庸夫
    第59回春季応用物理学会 2012年03月 口頭発表(一般)
  • エレクトロマイグレーションによるAu細線内微細構造変化のTEMその場観察  [通常講演]
    村上暢介, 有田正志, 浜田弘一, 高橋庸夫
    第59回春季応用物理学会 2012年03月 口頭発表(一般)
  • MgF2/Fe ナノドット/MgF2薄膜における電気伝導特性  [通常講演]
    石川琢磨, 佐藤栄太, 浜田弘一, 有田正志, 高橋庸夫
    電子情報通信学会技術研究報告 2012年02月 口頭発表(一般)
  • パターン依存酸化法を用いたSi単電子トランジスタの高周波特性  [通常講演]
    竹中浩人, 篠原迪人, 内田貴史, 有田正志, 藤原 聡, 高橋庸夫
    電子情報通信学会技術研究報告 2012年02月 口頭発表(一般)
  • Si 単電子トランジスタにおけるバックゲート電圧によるクーロンダイヤモンドの変化  [通常講演]
    内田貴史, 篠原迪人, 竹中浩人, 有田正志, 藤原聡, 高橋庸夫
    第47回 応用物理学会北海道支部講演会 2012年01月 口頭発表(一般)
  • 固体電解質ReRAMのTEMその場観察  [通常講演]
    藤井孝史, 有田正志, 浜田弘一, 高橋庸夫, 藤原一郎
    日本顕微鏡学会北海道支部学術講演会 2011年12月 口頭発表(一般)
  • Au 細線を用いたElectromigration による形状変化のTEM 内同時観察  [通常講演]
    村上暢介, 有田正志, 浜田弘一, 高橋庸夫
    日本顕微鏡学会北海道支部学術講演会 2011年12月 口頭発表(一般)
  • In-situ transmission electron microscopy analysis of conductive fila- ment in resistance random access memories  [招待講演]
    Y.Takahashi, T.Fujii, M.Arita, I. Fujiwara
    220th ECS Meeting 2011年10月 口頭発表(招待・特別)
  • In-situ TEM observation for formation of Au nanowires and nanogaps caused by electromigration  [通常講演]
    Y. Murakami, M. Arita, K. Hamada, Y. Takahashi
    2011 Internat. Conf. Sol. Stat. Dev. Mater 2011年09月 ポスター発表
  • 透過型電子顕微鏡によるエレクトロマイグレーションのその場観察  [通常講演]
    村上暢介, 有田正志, 浜田弘一, 高橋庸夫
    第72回応用物理学会学術講演会 2011年09月 口頭発表(一般)
  • Si単電子トランジスタに光照射することによる単正孔トランジスタ動作  [通常講演]
    篠原迪人, 有田正志, 藤原聡, 高橋庸夫
    第72回応用物理学会学術講演会 2011年09月 口頭発表(一般)
  • Si単電子トランジスタにおける光照射による単一正孔トラップと電気伝導特性の変化(II)  [通常講演]
    篠原迪人, 有田正志, 藤原聡, 高橋庸夫
    第72回応用物理学会学術講演会 2011年09月 口頭発表(一般)
  • Mo酸化物薄膜の抵抗スイッチ特性  [通常講演]
    有田正志, 梶宏道, 高見澤圭佑, 藤井孝史, 川西敬仁, 浜田弘一, 高橋庸夫
    第72回応用物理学会学術講演会 2011年08月 口頭発表(一般)
  • 固体電解質ReRAMのフィラメント形成観察とその組成分析  [通常講演]
    藤井孝史, 有田正志, 浜田弘一, 高橋庸夫, 藤原一郎
    第72回応用物理学会学術講演会 2011年08月 口頭発表(一般)
  • Ge(001)基板上にエピタキシャル成長したホイスラー合金Co2MnSiヘテロ構造の構造に関する特性及び磁気的特性  [通常講演]
    李 桂芳, 平 智幸, 松田健一, 有田正志, 植村哲也, 山本眞史
    第72回応用物理学会学術講演会 2011年08月 口頭発表(一般)
  • In-situ TEM Observation of Electromigration in Au Thin Wires  [通常講演]
    Y. Murakami, M. Arita, K. Hamada, Y. Takahashi
    E-MRS ICAM IUMRS 2011 Spring Meeting 2011年05月 ポスター発表
  • Lorentz microscopy observations of MgO/Fe-nanodot/MgO granular films  [通常講演]
    M. Kudo, T. Ishikawa, R. Arai, K. Hamada, M. Arita, Y. Takahashi
    E-MRS ICAM IUMRS 2011 Spring Meeting 2011年05月 ポスター発表
  • Resistance switching properties of molybdenum oxide films  [通常講演]
    M. Arita, H. Kaji, K. Takamizawa, T. Fujii, T. Kawanishi, Y. Takahashi
    E-MRS ICAM IUMRS 2011 Spring Meeting 2011年05月 ポスター発表
  • In-situ TEM Analysis of Conductive Filament in a Solid Electrolyte Resistance RAM  [通常講演]
    T. Fujii, M. Arita, Y. Takahashi, I. Fujiwara
    2011 MRS Spring Meeting 2011年04月 口頭発表(一般)
  • Au細線を用いたエレクトロマイグレーションのTEM内同時観察  [通常講演]
    村上暢介, 有田正志, 高橋庸夫
    第58回応用物理学関係連合講演会(CD-ROMによる発表) 2011年03月 その他
  • 固体電解質ReRAMにおけるフィラメント形成過程のTEM観察  [通常講演]
    藤井孝史, 有田正志, 浜田弘一, 高橋庸夫, 藤原一郎
    春季第58回応用物理学関係連合講演会(CD-ROMによる発表) 2011年03月 その他
  • Si単電子トランジスタにおける光照射による単一正孔トラップと電気伝導特性の変化  [通常講演]
    篠原迪人, 三上圭, 加藤勇樹, 有田正志, 藤原聡, 高橋庸夫
    春季第58回応用物理学関係連合講演会(CD-ROMによる発表) 2011年03月 その他
  • Si単電子トランジスタにおける光照射による単一キャリアトラップ生成と電気伝導特性  [通常講演]
    篠原迪人, 三上圭, 加藤勇樹, 有田正志, 藤原聡, 高橋庸夫
    電子情報通信学会技術研究報告 2011年02月 口頭発表(一般)
  • MgO/Feナノドット/MgO薄膜における電気的・磁気的特性のFe膜厚依存性  [通常講演]
    石川琢磨, 新井亮太, 工藤昌輝, 浜田弘一, 有田正志, 高橋庸夫
    第46回応用物理学会北海道支部学術講演会 2011年01月 口頭発表(一般)
  • Si単電子トランジスタにおける単一キャリアトラップによる電気伝導特性の変化  [通常講演]
    篠原迪人, 三上圭, 加藤勇樹, 有田正志, 藤原聡, 高橋庸夫
    第46回応用物理学会北海道支部学術講演会 2011年01月 口頭発表(一般)
  • RIEを用いて作製したCoOReRAMデバイスの特性評価  [通常講演]
    川西敬仁, 高見沢圭佑, 藤井孝史, 浜田弘一, 有田正志, 高橋庸夫
    第46回応用物理学会北海道支部学術講演会 2011年01月 口頭発表(一般)
  • MoOx を用いた抵抗変化メモリの特性と膜形状評価  [通常講演]
    高見澤圭佑, 川西敬仁, 藤井孝史, 浜田弘一, 有田正志, 高橋庸夫
    第47回 応用物理学会北海道支部講演会 2011年01月 口頭発表(一般)
  • Analysis of Tunneling Potential of Si SETs Fabricated by Pattern-Dependent Oxidation  [通常講演]
    Y. Kato, M. Jo, M. Arita, A. Fujiwara, Y. Ono, K. Nishiguchi, H. Inokawa, Y. Takahashi
    Seventh International Conference on Flow Dynamics Workshop 2010年11月 ポスター発表
  • 電磁石搭載型TEMホルダーシステムの作製とパーマロイディスクへの応用  [通常講演]
    有田正志, 徳田良平, 浜田弘一, 高橋庸夫
    日本金属学会2010年秋期講演大会 2010年09月 口頭発表(一般)
  • 抵抗変化型メモリ材料NiO の電圧印加時におけるTEM その場観察  [通常講演]
    有田正志, 藤井孝史, 浜田弘一, 高橋庸夫
    日本金属学会2010年秋期講演大会 2010年09月 口頭発表(一般)
  • The observation on “conduction spot” in NiO resistance RAM  [通常講演]
    T. Fujii, H. Kondo, H. Kaji, M. Arita, M. Moniwa, T. Yamaguchi, I. Fujiwara, M. Yoshimaru, Y. Takahashi
    2010 Int. Conf. Solid State Devices and Materials 2010年09月 口頭発表(一般)
  • エレクトロマイグレーションを用いた金のナノギャップ作製  [通常講演]
    村上暢介, 有田正志, 高橋庸夫
    第71回応用物理学会学術講演会 2010年09月 口頭発表(一般)
  • 透過型電子顕微鏡によるNiO薄膜のフィラメント形成評価  [通常講演]
    藤井孝史, 川西敬仁, 浜田弘一, 有田正志, 高橋庸夫
    秋季第71回応用物理学関係連合講演会、15a-NE-7(@長崎大学、長崎:2010.9.15) 2010年09月 口頭発表(一般)
  • 磁場印加機構を持ったローレンツ観察用TEMホルダーの開発と磁性薄膜その場観察への応用  [通常講演]
    徳田良平, 浜田弘一, 有田正志, 高橋庸夫
    第34回日本磁気学会学術講演会 2010年09月 口頭発表(一般)
  • Analysis of Tunneling Potential of Si SETs Fabricated by Pattern-Dependent Oxidation  [通常講演]
    Y. Kato, M. Jo, M. Arita, A. Fujiwara, Y. Ono, K. Nishiguchi, H. Inokawa, Y. Takahashi, J.-B. Choi
    IEEE Silicon Nanoelectronics Workshop 2010年06月 ポスター発表
  • I-V measurement of nano-region NiO in transmission electron microscope  [通常講演]
    T. Fujii, H. Kondo, T. Kawanishi, H. Kaji, K. Hamada, M. Arita, Y. Takahashi
    E-MRS Spring Meeting 2010, 2010年06月 ポスター発表
  • TEM holder generating in-plane magnetic field and its application on thin permalloy films  [通常講演]
    R. Tokuda, K. Hamada, M. Arita, Y. Takahashi
    E-MRS 2010 Spring Meeting 2010年06月 ポスター発表
  • Mo酸化物による抵抗変化型メモリの電気的特性評価  [通常講演]
    梶宏道, 川西敬仁, 近藤洋史, 藤井孝史, 有田 正志, 髙橋 庸夫
    第57回応用物理学関係連合講演会 2010年03月 口頭発表(一般)
  • PADOX法によるSi単電子トランジスタの作製メカニズム解析  [通常講演]
    加藤勇樹, 曹民圭, 有田正志, 藤原聡, 高橋庸夫
    第57回春季応用物理学会 2010年03月 口頭発表(一般)
  • MgO/Feナノドット/MgO薄膜における電気抵抗のFe膜厚依存性  [通常講演]
    石川琢磨, 工藤昌輝, 若杉恭平, 浜田弘一, 有田正志, 高橋庸夫
    日本金属学会北海道支部講演大会 2010年01月 口頭発表(一般)
  • :Si単電子トランジスタにおけるゲート電圧によるキャパシタンスの変化  [通常講演]
    加藤勇樹, 曹民圭, 有田正志, 藤原聡, 高橋庸夫
    第45回応用物理学会北海道支部講演大会 2010年01月 口頭発表(一般)
  • 熱酸化により作製したCoO薄膜のReRAM特性  [通常講演]
    川西敬仁, 梶宏道, 近藤洋史, 藤井孝史, 浜田弘一, 有田正志, 高橋庸夫
    第45回応用物理学会北海道支部講演大会 2010年01月 口頭発表(一般)

作品等

  • TEMを用いたナノ微粒子の伝導特性評価に関する研究、日本物理学会春季講演会
    2005年
  • 数を制限したナノ粒子系におけるトンネル伝導特性のTEMその場実験、日本顕微鏡学会北海道支部講演会
    2005年
  • Fe-MgO複合膜におけるクーロンステアケースのTEMその場実験、応用物理学会秋季講演会
    2005年
  • 量子ドットアレイによる多機能デバイスの特性シミュレーション、応用物理学会春季講演会
    2005年
  • 1ナノ粒子系のトンネル伝導特性に関するTEMその場実験、日本顕微鏡学会講演会
    2005年
  • Fe粒子分散膜の変形時における電気伝導のTEMその場実験、日本金属学会秋季講演会
    2005年
  • MgO基板上におけるFe、SrF2配向成長応用物理学会北海道支部講演会
    2004年
  • TEM内で作成した金ナノワイヤーのコンダクタンス測定,日本応用磁気学会学術講演会
    2004年
  • パーマロイ薄膜の磁気抵抗効果と磁区のその場観察,日本応用磁気学会学術講演会
    2004年
  • パーマロイ薄膜の磁気抵抗効果と磁区のその場観察,日本金属学会北海道支部講演会
    2004年
  • 金ナノワイヤーにおけるG0/2量子コンダクタンス,日本金属学会春季講演会
    2004年
  • Fe-SrF2グラニュラー薄膜の磁気抵抗効果,日本金属学会春季講演会
    2004年
  • Fe-SrF2グラニュラー薄膜の磁気抵抗効果、日本金属学会講演会
    2004年
  • 金ナノワイヤーにおけるG0/2コンダクタンス、日本金属学会講演会
    2004年
  • TEMを用いたナノ微粒子の伝導測定に関する研究,日本物理学会春季講演会
    2004年
  • TEMを用いたナノ微粒子の伝導測定に関する研究、日本物理学会講演会
    2004年
  • TEM内で作成した金ナノワイヤーの量子コンダクタンス、日本顕微鏡学会北海道支部講演会
    2004年
  • TEM内で作成した金ナノワイヤーの量子コンダクタンス,日本顕微鏡学会北海道支部講演会
    2004年
  • 微粒子の電気伝導とTEMの同時観察,日本金属学会北海道支部講演会
    2004年
  • 微粒子の電気伝導とTEMの同時観察、日本金属学会北海道支部講演会
    2004年
  • 金ナノワイヤーにおけるG0/2量子コンダクタンス、日本金属学会北海道支部講演会
    2004年
  • 金ナノワイヤーにおけるG0/2量子コンダクタンス、日本金属学会北海道支部講演会
    2004年
  • TEM内ナノコンタクト実験用探針の作製、日本物理学会講演会
    2003年
  • PVD中に分散され、NiまたはCo被覆したPdまたはPtナノ粒子の磁気特性、日本応用磁気学会講演大会
    2003年
  • ローレンツTEM・電気抵抗測定の同時実験とNi-Fe薄膜への応用、日本応用磁気学会講演会
    2003年
  • イオンシャドー法により作製した尖鋭探針の形状予測。日本金属学会北海道支部講演会
    2003年
  • 簡易型コンビナトリアル蒸着装置の作製とその応用、日本金属学会北海道支部講演会
    2003年
  • パーマロイ薄膜の磁化分布と電気抵抗変化、日本顕微鏡学会講演会
    2003年

その他活動・業績

共同研究・競争的資金等の研究課題

  • 人工ニューロン開発を目指したその場TEM法による抵抗変化メモリ回路動作の研究
    日本学術振興会:科学研究費基盤B
    研究期間 : 2016年04月 -2019年03月 
    代表者 : 有田 正志
  • サイドゲート制御型抵抗変化メモリの開拓
    日本学術振興会:科学研究費挑戦的萌芽研究
    研究期間 : 2014年04月 -2016年03月 
    代表者 : 高橋庸夫
  • TEM-STMその場計測による抵抗変化メモリの動作機構解明
    日本学術振興会:科学研究費基盤C
    研究期間 : 2013年04月 -2016年03月 
    代表者 : 有田 正志
  • 多値ReRAM搭載のナノドットアレイによる多入力多出力フレキシブルデバイスの研究
    日本学術振興会:科学研究費基盤B
    研究期間 : 2012年04月 -2015年03月 
    代表者 : 高橋 庸夫
  • 透過電子顕微鏡その場計測システムの開発とナノエレクトロニクスへの応用
    日本学術振興会:科学研究費基盤C
    研究期間 : 2009年04月 -2012年03月 
    代表者 : 有田 正志
  • 室温動作の単電子デバイス開発を指向したTEM/STMによる単電子トンネル現象研究
    日本学術振興会:科学研究費基盤C
    研究期間 : 2006年04月 -2009年03月 
    代表者 : 有田 正志
  • ナノドットアレイによる多入力・多出力機能性デバイスの研究
    日本学術振興会:科学研究費基盤A
    研究期間 : 2005年04月 -2008年03月 
    代表者 : 高橋 庸夫
  • 磁気共鳴走査力顕微鏡技術による交換相互作用の原子分解能検出
    日本学術振興会:科学研究費基盤B
    研究期間 : 2003年04月 -2006年03月 
    代表者 : 武笠 幸一
  • ナノサイズ磁気ドット列の作製とその磁気抵抗効果
    日本学術振興会:科学研究費基盤C
    研究期間 : 2001年04月 -2004年03月 
    代表者 : 有田 正志
  • 微小素子を搭載した高機能SPM用プローブの開発
    日本学術振興会:科学研究費基盤A
    研究期間 : 2001年04月 -2004年03月 
    代表者 : 武笠 幸一
  • 生体適合性を持つ磁気発熱材料の開発とがんの温熱療法への応用
    文部科学省:科学研究費基盤A
    研究期間 : 1996年04月 -1999年03月 
    代表者 : 松井 正顕
  • 3d遷移金属系エピタキシャル人工格子薄膜の結晶構造制御とその物性
    文部省:科学研究費基盤B
    研究期間 : 1994年04月 -1997年03月 
    代表者 : 松井 正顕
  • A15型クロム超微粒子中の欠陥構造
    文部省:科学研究費奨励A
    研究期間 : 1994年04月 -1995年03月 
    代表者 : 有田 正志
  • A15型構造をもつ金属薄膜・微粒子の作成条件と構造解析
    文部省:科学研究費奨励A
    研究期間 : 1993年04月 -1994年03月 
    代表者 : 有田 正志

教育活動情報

主要な担当授業

  • システム工学概論
    開講年度 : 2019年
    課程区分 : 学士課程
    開講学部 : 工学部
  • 量子物性学特論
    開講年度 : 2019年
    課程区分 : 修士課程
    開講学部 : 情報科学研究科
    キーワード : 量子干渉効果,トンネル現象,コンダクタンス量子化,ナノ構造,ナノ加工技術,メソスコピック系の物理,シリコン集積回路,強磁性体,ソフト磁性,バンド構造, 3d遷移金属
  • 電子デバイス学特論
    開講年度 : 2019年
    課程区分 : 修士課程
    開講学部 : 情報科学研究科
    キーワード : MOSFET,シリコン集積回路,スケーリング則,ナノ構造,ナノ加工技術,量子効果,先端CMOS技術,磁性体,スピン,バンド構造,スピントロニクスデバイス
  • 電子デバイス学特論
    開講年度 : 2019年
    課程区分 : 修士課程
    開講学部 : 情報科学院
    キーワード : MOSFET,シリコン集積回路,スケーリング則,ナノ構造,ナノ加工技術,量子効果,先端CMOS技術,磁性体,スピン,バンド構造,スピントロニクスデバイス
  • 量子物性学特論
    開講年度 : 2019年
    課程区分 : 博士後期課程
    開講学部 : 情報科学研究科
    キーワード : 量子干渉効果,トンネル現象,コンダクタンス量子化,ナノ構造,ナノ加工技術,メソスコピック系の物理,シリコン集積回路,強磁性体,ソフト磁性,バンド構造, 3d遷移金属
  • 電子デバイス学特論
    開講年度 : 2019年
    課程区分 : 博士後期課程
    開講学部 : 情報科学研究科
    キーワード : MOSFET,シリコン集積回路,スケーリング則,ナノ構造,ナノ加工技術,量子効果,先端CMOS技術,磁性体,スピン,バンド構造,スピントロニクスデバイス
  • 電子デバイス学特論
    開講年度 : 2019年
    課程区分 : 博士後期課程
    開講学部 : 情報科学院
    キーワード : MOSFET,シリコン集積回路,スケーリング則,ナノ構造,ナノ加工技術,量子効果,先端CMOS技術,磁性体,スピン,バンド構造,スピントロニクスデバイス
  • 応用電磁気学
    開講年度 : 2019年
    課程区分 : 学士課程
    開講学部 : 工学部
    キーワード : 誘電体、磁性体、導体、マクスウェル方程式、電磁波、電磁エネルギー
  • 情報エレクトロニクス概論
    開講年度 : 2019年
    課程区分 : 学士課程
    開講学部 : 工学部
    キーワード : 情報理論, 計算機ハードウエア, 電子デバイス, 生体情報, 生命科学, 電子回路, 通信, メディア, ネットワーク, 電気回路, 制御工学

大学運営

委員歴

  • 2009年 - 2010年   日本金属学会   分科会運営委員   日本金属学会
  • 2006年 - 2008年   応用物理学会   北海道支部庶務幹事   応用物理学会
  • 2006年 - 2008年   日本金属学会   評議員(北海道支部)   日本金属学会
  • 1998年 - 1999年   応用物理学会   北海道支部会計幹事   応用物理学会
  • 1998年 - 1999年   日本金属学会   編集委員   日本金属学会


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