Kumakura Kazuhide(Research Center for Integrated Quantum Electronics)

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Kumakura Kazuhide

Research Center for Integrated Quantum Electronics Specially Appointed Professor

Researcher basic information

■ Degree

Ph.D. in Engineering, Hokkaido University, Mar. 1998

■ URL
researchmap URL

https://researchmap.jp/K-crystalgrowth?lang=en

ホームページURL

https://orcid.org/0000-0002-3606-0596

https://jglobal.jst.go.jp/detail?JGLOBAL_ID=202401017486130313

■ Various IDs
Researcher number

00393736

ORCID ID

https://orcid.org/0000-0002-3606-0596

Researcher ID

C-2432-2011

J-Global ID

202401017486130313

■ Research Keywords and Fields
Research Keyword

semiconductor crystal growth

semiconductor devices

photoelectrochemical process

artificial photosynthesis

solar water splitting

Research Field

Nanotechnology/Materials, Crystal engineering, 半導体

Nanotechnology/Materials, Thin film/surface and interfacial physical properties, 半導体結晶成長

Career

■ Career
Career

Oct. 2024 - Present
Hokkaido University, Research Center for Integrated Quantum Electronics, Specially Appointed Professor, Japan

Apr. 2022 - Sep. 2024
Nippon Telegraph and Telephone Corporation, NTT Basic Research Laboratories, Vice President, Head of NTT Basic Research Laboratories, Japan

Oct. 2019 - Mar. 2022
Nippon Telegraph and Telephone Corporation, Basic Research Laboratories, 企画担当主席研究員、グループリーダー, Japan

Jul. 2019 - Sep. 2019
Nippon Telegraph and Telephone Corporation, Basic Research Laboratories, 企画担当主幹研究員、グループリーダー

Apr. 2019 - Jun. 2019
Nippon Telegraph and Telephone Corporation, Basic Research Laboratories, グループリーダー、主幹研究員, Japan

Apr. 2015 - Mar. 2019
Nippon Telegraph and Telephone Corporation, Basic Research Laboratories, グループリーダー、主幹研究員, 特別研究員, Japan

Oct. 2010 - Mar. 2015
Nippon Telegraph and Telephone Corporation, Basic Research Laboratories, Japan

Oct. 2008 - Sep. 2010
Nippon Telegraph and Telephone Corporation, Basic Research Laboratories, 企画担当総括担当, Japan

Jan. 1999 - Sep. 2008
Nippon Telegraph and Telephone Corporation, Basic Research Laboratories, Japan

Aug. 2007 - Aug. 2008
Paul-Drude-Institut für Festkörperelektronik, Visiting researcher, Germany

Apr. 1998 - Dec. 1998
Nippon Telegraph and Telephone Corporation, Basic Research Laboratories, Japan

Educational Background

Apr. 1995 - Mar. 1998, Hokkaido University, Graduate School of Engineering, 電子情報工学専攻博士後期課程, Japan

Apr. 1993 - Mar. 1995, Hokkaido University, Graduate School of Engineering, 電気工学専攻修士課程, Japan

Apr. 1989 - Mar. 1993, Hokkaido University, School of Engineering, Japan

Committee Memberships

2023 - 2024
National Institutes for Quantum Science and Technology, Advisory board, Others

2024
The 43rd Electronic Materials Symposium (EMS-43), Steering Committee Member, Society

2023
The 42nd Electronic Materials Symposium (EMS-42), Steering Committee Member, Society

2018
19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX), Program Committee Members, Society

2014
2014 International Conference on Solid State Devices and Materials (SSDM 2014), Program Subcommittee Members, Society

2013
2013 International Conference on Solid State Devices and Materials (SSDM 2013), Program Subcommittee Members, Society

2013
International Symposium on Compound Semiconductors, Guest Editor, Society

2007
The 26th Electronic Materials Symposium (EMS-26), Accounting Committee Member, Society

2006
The 25th Electronic Materials Symposium (EMS-25), Accounting Committee Member, Society

Research activity information

■ Awards

Sep. 2000, The Japan Society of Applied Physics, Young Scientist Presentation Award
High Hole Concentration Realized by Mg-doped InGaN and InGaN/GaN Superlattices
Kazuhide Kumakura

■ Papers

n-type AlN/AlGaN Superlattice Cladding Layer for Ultraviolet Laser Diodes
Kazuaki Ebata; Kouta Tateno; Kazuyuki Hirama; Kazuhide Kumakura; Yoshitaka Taniyasu
physica status solidi (a), Dec. 2025
Scientific journal

In-polar InN growth diagram by MOVPE
Yudai Yamashita; Kazuhide Kumakura; Kazuyuki Hirama; Yoshitaka Taniyasu
Journal of Applied Physics, 21 Sep. 2025
Scientific journal

Vicinal GaAs(111)B substrates suppress rotational domains in InSe van der Waals epitaxy
Koji Onomitsu; Hiroki Hibino; Hideki Yamamoto; Kazuhide Kumakura
Japanese Journal of Applied Physics, 01 Jun. 2025
Scientific journal

AlN-based polarization-doped field-effect transistors with downward-graded AlGaN underlayers
Masanobu Hiroki; Kazuyuki Hirama; Kazuhide Kumakura; Yoshitaka Taniyasu
Applied Physics Letters, 19 May 2025
Scientific journal

Ferromagnetic permalloy/p-type boron-doped diamond Schottky barrier diodes
Makoto Kawano; Carlos Cunha; Kazuyuki Hirama; Kazuhide Kumakura; Yoshitaka Taniyasu
Applied Physics Letters, 06 Jan. 2025
Scientific journal

Effects of Thermal Annealing on V‐Based Ohmic Contacts on n‐Type AlGaN with High Al Content
Kazuaki Ebata; Masanobu Hiroki; Kouta Tateno; Kazuhide Kumakura; Yoshitaka Taniyasu
physica status solidi (a), Nov. 2024
Scientific journal

Light Emission Characteristics in Nitride Semiconductor Nanowires Fabricated by Top‐down Method
Kouta Tateno; Masato Takiguchi; Kazuaki Ebata; Satoshi Sasaki; Kazuhide Kumakura; Yoshitaka Taniyasu
physica status solidi (a), 15 May 2024
English, Scientific journal, Nanophotonic devices made from nitride semiconductors are promising for various applications, especially those utilizing ultraviolet‐visible light with low‐power consumption and high driving speed. Herein, nanowire structures are fabricated from a light‐emitting diode epitaxial wafer and demonstrates the effectiveness of wet etching in top‐down fabrication. Spontaneous emission from active layers and unanticipated lasing derived from a GaN layer in a single nanowire are observed by microphotoluminescence measurement. Lastly, the lasing mode through a 3D simulation of the eigenmodes in this nanowire structure is clarified.

Growth mechanism of Mn-doped diamond (111) layers in microwave plasma chemical vapor deposition
Makoto Kawano; Kazuyuki Hirama; Yoshitaka Taniyasu; Kazuhide Kumakura
Journal of Applied Physics, 21 Feb. 2024
Scientific journal

Photoelectrochemical Properties of Gallium-nitride-based Photoanode in Tandem Cell Analyzed by AC Impedance Method
Yuya UZUMAKI; Yoko ONO; Kazuhide KUMAKURA; Takeshi KOMATSU; Atsushi ARATAKE; Hironobu MINOWA
Electrochemistry, 2024
Scientific journal

High blocking temperature of Fe nanoparticles embedded in diamond thin films
M. Kawano; K. Hirama; K. Kumakura
AIP Advances, 12, 4, 045022, 045022, {AIP} Publishing, 01 Apr. 2022
Scientific journal

High-Temperature Performance of AlN MESFETs With Epitaxially Grown n-Type AlN Channel Layers
Kazuhide Kumakura
IEEE Electron Device Letters, 2022
Scientific journal

Control of n-type electrical conductivity for cubic boron nitride (c-BN) epitaxial layers by Si doping
Kazuyuki Hirama; Yoshitaka Taniyasu; Hideki Yamamoto; Kazuhide Kumakura
Applied Physics Letters, 20 Apr. 2020
Scientific journal

Ohmic contact to AlN:Si using graded AlGaN contact layer
M. Hiroki; K. Kumakura
Applied Physics Letters, 115, 19, 192104, 192104, {AIP} Publishing, 04 Nov. 2019
Scientific journal

Plasmon Control Driven by Spatial Carrier Density Modulation in Graphene
Kazuhide Kumakura
17 Apr. 2019
English, Scientific journal

Wurtzite GaP nanowire grown by using tertiarybutylchloride and used to fabricate solar cell
Kazuhide Kumakura
Japanese Journal of Applied Physics, 2019
Scientific journal

Structural analysis of cubic boron nitride (111) films heteroepitaxially grown on diamond (111) substrates
Kazuhide Kumakura
Journal of Applied Physics, 2019
Scientific journal

Infinite-layer phase formation in the Ca1-xSrxCuO2 system by reactive molecular beam epitaxy
Kazuhide Kumakura
Journal of Applied Physics, 2018
Scientific journal

N-face (0001) GaN/InN/GaN double heterostructures emitting near-infrared photoluminescence grown by metalorganic vapor phase epitaxy
Kazuhide Kumakura
Applied Physics Express, 2018
Scientific journal

Surface structures of graphene covered Cu(103)
Kazuhide Kumakura
Japanese Journal of Applied Physics, 2018
Scientific journal

High hole concentration in Mg-doped AlN/AlGaN superlattices with high Al content
Kazuhide Kumakura
Japanese Journal of Applied Physics - Special Issues, 2018
Scientific journal

Terahertz spectroscopy of graphene complementary split ring resonators with gate tunability
Kazuhide Kumakura
Japanese Journal of Applied Physics - Special Issues, 2017
Scientific journal

Surface morphology control of nonpolar m-plane AlN homoepitaxial layers by flow-rate modulation epitaxy
Kazuhide Kumakura
Physica Status Solidi (B), 2017
Scientific journal

Molecular beam epitaxy of Nd2PdO4 thin films
Kazuhide Kumakura
AIP Advances, 2017
Scientific journal

Surface supersaturation in flow-rate modulation epitaxy of GaN
Kazuhide Kumakura
Journal of Crystal Growth, 2017
Scientific journal

Initial stage of hexagonal boron nitride growth in diffusion and precipitation method
Kazuhide Kumakura
Japanese Journal of Applied Physics, 2017
Scientific journal

Heteroepitaxial growth of single-domain cubic boron nitride films by ion-beam-assisted MBE
Kazuhide Kumakura
Applied Physics Express, 2017
Scientific journal

Efficient heat dissipation in AlGaN/GaN high electron mobility transistors by substrate-transfer technique
Kazuhide Kumakura
Physica Status Solidi (a), 2017
Scientific journal

Enhancement of performance of AlGaN/GaN high-electron-mobility transistors by transfer from sapphire to a copper plate
Kazuhide Kumakura
Japanese Journal of Applied Physics, 2016
Scientific journal

Epitaxial growth of monolayer MoSe₂ on GaAs
Kazuhide Kumakura
Applied Physics Express, 2016
Scientific journal

Flow-rate modulation epitaxy of nonpolar m-plane AlN homoepitaxial layers grown on AlN bulk substrates
Nishinaka, J.; Taniyasu, Y.; Akasaka, T.; Kumakura, K.
2016 Compound Semiconductor Week (CSW) [includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) and 43rd International Symposium on Compound Semiconductors (ISCS)], 1, 1, 2016
Scientific journal

A new AlON buffer layer for RF-MBE growth of AlN on a sapphire substrate
Kazuhide Kumakura
Journal of Crystal Growth, 2015
Scientific journal

Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN
Kazuhide Kumakura
Applied Physics Letters, 2014
Scientific journal

GaN on h-BN technology for release and transfer of nitride devices
Hiroki, M.; Kumakura, K.; Kobayashi, Y.; Akasaka, T.; Yamamoto, H.; Makimoto, T.
2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D), 31, 31, 2014
Scientific journal

Unintentional Ga incorporation in metalorganic vapor phase epitaxy of In-containing III-nitride semiconductors
Kazuhide Kumakura
Journal of Crystal Growth, 2013
Scientific journal

Influence of Metalorganic Vapor Phase Epitaxy Regrowth on Characteristics of InAlN/AlGaN/GaN High Electron Mobility Transistors
Kazuhide Kumakura
Japanese Journal of Applied Physics, 2013
Scientific journal

Layered boron nitride as a release layer for mechanical transfer of GaN-based devices
Kazuhide Kumakura
11 Apr. 2012
Scientific journal

A Vertical InGaN/GaN Light-Emitting Diode Fabricated on a Flexible Substrate by a Mechanical Transfer Method Using BN
Kazuhide Kumakura
Applied Physics Express, 2012
Scientific journal

High-Power Characteristics of GaN/InGaN Double Heterojunction Bipolar Transistors with a Regrown p-InGaN Base Layer
Kazuhide Kumakura
MRS Proceedings, 2011
Scientific journal

Epitaxial Heusler alloy Co2FeSi films on Si(111) substrates grown by molecular beam epitaxy
Kazuhide Kumakura
British Journal of Applied Physics, 2010
Scientific journal

Long-range order and thermal stability of thin Co2FeSi films on GaAs(111)B
Kazuhide Kumakura
British Journal of Applied Physics, 2010
Scientific journal

High-temperature characteristics up to 590 °C of a pnp AlGaN/GaN heterojunction bipolar transistor
Kazuhide Kumakura
Applied Physics Letters, 2009
Scientific journal

Low-temperature characteristics of the current gain of GaN/InGaN double-heterojunction bipolar transistors
Kazuhide Kumakura
Journal of Crystal Growth, 2009
Scientific journal

Carrier transport mechanisms of Pnp AlGaN∕GaN heterojunction bipolar transistors
Kazuhide Kumakura
Applied Physics Letters, 2008
Scientific journal

High-temperature (300 degrees C) operation of npn-type GaN/InGaN double heterojunction bipolar transistors
Kazuhide Kumakura
Physica Status Solidi (C) Current Topics in Solid State Physics, 2008
Scientific journal

High performance pnp AlGaN∕GaN heterojunction bipolar transistors on GaN substrates
Kazuhide Kumakura
Applied Physics Letters, 2008
Scientific journal

High-temperature characteristics of AlxGa1-xN-based vertical conducting
Kazuhide Kumakura
Japanese Journal of Applied Physics, 2008
Scientific journal

High breakdown field of pnp GaN/InGaN/AlGaN DHBTs with AlGaN collector
Kazuhide Kumakura
Phys. Stat. Sol. (a), 2007
Scientific journal

Low-resistance graded AlxGa1-xN buffer layers for vertical conducting devices on n-SiC substrates
Kazuhide Kumakura
Journal of Crystal Growth, 2007
Scientific journal

Pnp AlGaN/InGaN/GaN Double Heterojunction Bipolar Transistors With Low-Base-Resistance (<100 Ω/square)
Kazuhide Kumakura
Japanese Journal of Applied Physics - Special Issues, 2007
Scientific journal

Temperature dependence of current-voltage characteristics of npn-type GaN/InGaN double heterojunction bipolar transistors
Kazuhide Kumakura
Applied Physics Letters, 2007
Scientific journal

Low on-resistance of GaN p-i-n vertical conducting diodes grown on 4H-SiC substrates
Kazuhide Kumakura
Physica Status Solidi (C) Current Topics in Solid State Physics, 2007
Scientific journal

Oxygen ion implantation isolation planar process for AlGaN/GaN HEMTs
Kazuhide Kumakura
IEEE Electron Device Letters, 2007
Scientific journal

High critical electric field exceeding 8 MV/cm measured using an AlGaN p-i-n vertical conducting diode on n-SiC substrate
Kazuhide Kumakura
Japanese Journal of Applied Physics, 2007
Scientific journal

Minority carrier diffusion lengths in MOVPE-grown n- and p-InGaN and performance of AlGaN/InGaN/GaN double heterojunction bipolar transistors
Kazuhide Kumakura
Journal of Crystal Growth, 2007
Scientific journal

DC and microwave performance of AlGaN/GaN HEMTs passivated with sputtered SiN _x
Kazuhide Kumakura
Semiconductor Science and Technology, 2007
Scientific journal

Influence of Lattice Constants of GaN and InGaN on npn-Type GaN/InGaN Heterojunction Bipolar Transistors
Kazuhide Kumakura
Japanese Journal of Applied Physics - Special Issues, 2006
Scientific journal

High critical electric field of AlxGa1-xN p-i-n vertical conducting diodes on n-SiC substrates
Kazuhide Kumakura
Applied Physics Letters, 2006
Scientific journal

p-InGaN/n-GaN vertical conducting diodes on n(+)-SiC substrate for high power electronic device applications
Kazuhide Kumakura
Japanese Journal of Applied Physics, 2006
Scientific journal

Growth of GaN on sapphire substrates using novel buffer layers of ECR-plasma-sputtered Al2O3/graded-AlON/AlN/Al2O3
Kazuhide Kumakura
Journal of Crystal Growth, 2006
Scientific journal

High breakdown voltage with low on-state resistance of p-InGaN/n-GaN vertical conducting diodes on n-GaN substrates
Kazuhide Kumakura
Applied Physics Letters, 2006
Scientific journal

Growth of nitride semiconductors and its application to heterojunction bipolar transistors
Kazuhide Kumakura
Electronics and Communications in Japan Part Ii-electronics, 2006
Scientific journal

Critical electric fields of AlGaN in AlGaN-based vertical conducting diodes on n-SiC substrates
Kazuhide Kumakura
Superlattices and Microstructures, 2006
Scientific journal

Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates
Kazuhide Kumakura
Japanese Journal of Applied Physics - Special Issues, 2005
Scientific journal

Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence
Kazuhide Kumakura
Applied Physics Letters, 2005
Scientific journal

High power operation of Pnp AlGaN/GaN heterojunction bipolar transistors
Kazuhide Kumakura
Physica Status Solidi (C) Current Topics in Solid State Physics, 2005
Scientific journal

Current-voltage characteristics of p-InGaN/n-GaN vertical conducting diodes on n(+)-SiC substrates
Kazuhide Kumakura
Applied Physics Letters, 2005
Scientific journal

High-voltage operation with high current gain of pnp AlGaN∕GaN heterojunction bipolar transistors with thin n-type GaN base
Kazuhide Kumakura
Applied Physics Letters, 2005
Scientific journal

Growth of nitride semiconductors and its application to heterojunction bipolar transistors
Makimoto, T.; Kumakura, K.
Transactions of the Institute of Electronics, Information and Communication Engineers C, vol.J88-C, no.7, 2005
Scientific journal

Extrinsic Base Regrowth of p-InGaN for Npn-Type GaN/InGaN Heterojunction Bipolar Transistors
Kazuhide Kumakura
Japanese Journal of Applied Physics - Special Issues, 2004
Scientific journal

Fabrication of GaN/Alumina/GaN structure to reduce dislocations in GaN
Kazuhide Kumakura
Japanese Journal of Applied Physics, 2004
Scientific journal

Al2O3 insulated-gate structure for AlGaN/GaN heterostructure field effect transistors having thin AlGaN barrier layers
Kazuhide Kumakura
Japanese Journal of Applied Physics, 2004
Scientific journal

High-power characteristics of GaN/InGaN double heterojunction bipolar transistors
Kazuhide Kumakura
Applied Physics Letters, 2004
Scientific journal

Schottky barrier heights of Au, Pd and Ni on n-GaN evaluated using mesa-structure diodes
Kazuhide Kumakura
Physica Status Solidi (C) Current Topics in Solid State Physics, 2003
Scientific journal

Ohmic Contact to p -GaN Using a Strained InGaN Contact Layer and Its Thermal Stability
Kazuhide Kumakura
Japanese Journal of Applied Physics - Special Issues, 2003
Scientific journal

Mg-acceptor activation mechanism and transport characteristics in p -type InGaN grown by metalorganic vapor phase epitaxy
Kazuhide Kumakura
Journal of Applied Physics, 2003
Scientific journal

Systematic investigation of minority carrier diffusion length in n-and p-GaN for nitride heterojunction bipolar transistors
Kazuhide Kumakura
International Symposium on Compound Semiconductors (Cat. No.03TH8675), 2003
Scientific journal

High current gain (>2000) of GaN/InGaN double heterojunction bipolar transistors using base regrowth of p-InGaN
Kazuhide Kumakura
Applied Physics Letters, 2003
Scientific journal

High breakdown electric field for Npn-type AlGaN/InGaN/GaN heterojunction bipolar transistors
Kazuhide Kumakura
COMPOUND SEMICONDUCTORS 2002, 2003
Scientific journal

High electron concentrations in Si-doped AlN/AlGaN superlattices with high average Al content of 80%
Kazuhide Kumakura
Physica Status Solidi (a), 2003
Scientific journal

High current gain (>2000) and reduced common-emitter offset voltage of GaN/InGaN double heterojunction bipolar transistors
Makimoto, T.; Kumakura, K.; Kobayashi, N.
61st Device Research Conference. Conference Digest (Cat. No.03TH8663), 2003
Scientific journal

Pnp AlGaN/GaN heterojunction bipolar transistors operating at 300degC
Kazuhide Kumakura
Physica Status Solidi (a), 2002
Scientific journal

Valence-band discontinuities between InGaN and GaN evaluated by capacitance-voltage characteristics of p-InGaN/n-GaN diodes
Kazuhide Kumakura
Journal of Electronic Materials, 2002
Scientific journal

Polarization charge densities at p-GaN/n-AlGaN heterojunctions evaluated by capacitance-voltage characteristics
Kazuhide Kumakura
International Workshop on Nitride Semiconductors, Proceedings, 2002
Scientific journal

Polarization charge densities at p-GaN/n-AlGaN heterojunctions evaluated by capacitance-voltage characteristics
Makimoto, T.; Kumakura, K.; Kobayashi, N.
Physica Status Solidi C, no.1, 2002
Scientific journal

N-AlGaN/p-InGaN/n-GaN heterojunction bipolar transistors for high power operation
Kazuhide Kumakura
International Workshop on Nitride Semiconductors, Proceedings, 2002
Scientific journal

Npn InGaN/GaN double heterojunction bipolar transistors with high common-emitter current gains
Kazuhide Kumakura
COMPOUND SEMICONDUCTORS 2001, 2002
Scientific journal

Common-emitter current–voltage characteristics of a pnp GaN bipolar junction transistor
Kazuhide Kumakura
Applied Physics Letters, 2002
Scientific journal

Common-emitter current–voltage characteristics of a Pnp AlGaN/GaN heterojunction bipolar transistor with a low-resistance base layer
Kazuhide Kumakura
Applied Physics Letters, 2002
Scientific journal

High common-emitter current gains obtained by pnp GaN bipolar junction transistors
Kazuhide Kumakura
Materials Research Society Symposium - Proceedings, 2002
Scientific journal

N-AlGaN/p-InGaN/n-GaN heterojunction bipolar transistors for high power operation
Makimoto, T.M.; Kumakura, K.; Kobayashi, N.
Physica Status Solidi C, no.1, 2002
Scientific journal

p-InGaN/n-GaN heterojunction diodes and their application to heterojunction bipolar transistors
Kazuhide Kumakura
GaN and Related Alloys - 2000. Symposium (Materials Research Society Symposium Proceedings Vol.639), 2001
Scientific journal

Optical and electron devices using nitride semiconductors
Kazuhide Kumakura
Oyo Buturi, 2001
Scientific journal

High current gains obtained by InGaN/GaN double heterojunction bipolar transistors
Kazuhide Kumakura
Physica Status Solidi (a), 2001
Scientific journal

Low resistance non-alloy ohmic contact to p-type GaN using Mg-doped InGaN contact layer
Kazuhide Kumakura
Physica Status Solidi (a), 2001
Scientific journal

Low-resistance nonalloyed ohmic contact to p-type GaN using strained InGaN contact layer
Kazuhide Kumakura
Applied Physics Letters, 2001
Scientific journal

High current gains obtained by InGaN/GaN double heterojunction bipolar transistors with p-InGaN base
Kazuhide Kumakura
Applied Physics Letters, 2001
Scientific journal

High room-temperature hole concentrations above 1019 cm-3 in Mg-doped InGaN/GaN superlattices
Kazuhide Kumakura
Wide-Bandgap Electronic Devices. Symposium (Materials Research Society Symposium Proceedings Vol.622), 2001
Scientific journal

Heavily p-type doping into group-III nitrides and their application to heterojunction bipolar transistors
Kazuhide Kumakura
Ntt R & D, 2001
Scientific journal

Short period alloy superlattice for transparent conductive layer of UV-emitter
Kazuhide Kumakura
Proceedings of the International Workshop on Nitride Semiconductors, 2000
Scientific journal

High hole concentrations in Mg-doped InGaN grown by MOVPE
Kazuhide Kumakura
Journal of Crystal Growth, 2000
Scientific journal

InGaN/GaN double heterojunction bipolar transistor grown by metalorganic vapor phase epitaxy
Kazuhide Kumakura
Proceedings of the International Workshop on Nitride Semiconductors, 2000
Scientific journal

Activation Energy and Electrical Activity of Mg in Mg-Doped InxGa1-xN (x<0.2)
Kazuhide Kumakura
Japanese Journal of Applied Physics - Special Issues, 2000
Scientific journal

Selectively enhanced Mg incorporation into AlGaN barrier layer of strained layer superlattice
Kazuhide Kumakura
Proceedings of the International Workshop on Nitride Semiconductors, 2000
Scientific journal

Low p-type contact resistance using Mg-doped InGaN and InGaN/GaN superlattices
Kazuhide Kumakura
Proceedings of the International Workshop on Nitride Semiconductors, 2000
Scientific journal

Reduced damage of electron cyclotron resonance etching by In doping into p-GaN
Kazuhide Kumakura
Journal of Crystal Growth, 2000
Scientific journal

Efficient Hole Generation above 1019 cm-3 in Mg-Doped InGaN/GaN Superlattices at Room Temperature
Kazuhide Kumakura
Japanese Journal of Applied Physics - Special Issues, 2000
Scientific journal

Enhanced Hole Generation in Mg-Doped AlGaN/GaN Superlattices Due to Piezoelectric Field
Kazuhide Kumakura
Japanese Journal of Applied Physics - Special Issues, 2000
Scientific journal

GaAs Single Electron Transistors Fabricated by Selective Area Metalorganic Vapor Phase Epitaxy and Their Application to Single Electron Logic Circuits
Kazuhide Kumakura
Japanese Journal of Applied Physics - Special Issues, 1999
Scientific journal

Quantum dots fabricated by selective area MOVPE and their application to single electron devices
Kazuhide Kumakura
Bulletin of Materials Science, 1999
Scientific journal

Increased Electrical Activity of Mg-Acceptors in AlxGa1-xN/GaN Superlattices
Kazuhide Kumakura
Japanese Journal of Applied Physics - Special Issues, 1999
Scientific journal

AlGaAs nano-meter scale network structures fabricated by selective area MOVPE
Kazuhide Kumakura
Compound Semiconductors 1998. Proceedings of the Twenty-Fifth International Symposium on Compound Semiconductors, 1999
Scientific journal

Fabrication and transport characterization of GaAs quantum dots connected with quantum wires fabricated by selective area metalorganic vapor phase epitaxy
Kazuhide Kumakura
Physica E: Low-dimensional Systems and Nanostructures, 1998
Scientific journal

InAs quantum dot formation on GaAs pyramids by selective area MOVPE
Kazuhide Kumakura
Physica E: Low-dimensional Systems and Nanostructures, 1998
Scientific journal

Transport characterization of GaAs quantum dots connected with quantum wires fabricated by selective area metalorganic vapor phase epitaxy
Kazuhide Kumakura
Solid-State Electronics, 1998
Scientific journal

Fabrication of III-V semiconductor low-dimensional structures
Kazuhide Kumakura
Oyo Buturi, 1998
Scientific journal

Selective growth of MOVPE on AlGaAs/GaAs patterned substrates for quantum nano-structures
Kazuhide Kumakura
Control of Semiconductor Surfaces and Interfaces, 1997
Scientific journal

Selective growth of MOVPE on AlGaAs/GaAs patterned substrates for quantum nanostructures
Kazuhide Kumakura
Control of Semiconductor Surfaces and Interfaces. Symposium, 1997
Scientific journal

Formation and characterization of coupled quantum dots (CQDs) by selective area metalorganic vapor phase epitaxy
Kazuhide Kumakura
Journal of Crystal Growth, 1997
Scientific journal

Pyramidal quantum dot structures by self-limited selective area metalorganic vapor phase epitaxy
Kazuhide Kumakura
Solid-State Electronics, 1996
Scientific journal

Fabrication of GaAs/AlGaAs Quantum Dots by Metalorganic Vapor Phase Epitaxy on Patterned GaAs Substrates
Kazuhide Kumakura
Japanese Journal of Applied Physics - Special Issues, 1995
Scientific journal

Novel Formation Method of Quantum Dot Structures by Self-Limited Selective Area Metalorganic Vapor Phase Epitaxy
Kazuhide Kumakura
Japanese Journal of Applied Physics - Special Issues, 1995
Scientific journal

Dynamics of selective metalorganic vapor phase epitaxy growth for GaAs/AlGaAs micro-pyramids
Kazuhide Kumakura
Journal of Crystal Growth, 1994
Scientific journal

■ Other Activities and Achievements

Top-down fabrication of group III nitride nanowires
舘野功太; 舘野功太; 滝口雅人; 滝口雅人; 佐々木智; 江端一晃; 熊倉一英; 谷保芳孝, 応用物理学会秋季学術講演会講演予稿集(CD-ROM), 84th, 2023

■ Lectures, oral presentations, etc.

NiO助触媒を担持したGaN系光陽極を用いた光水分解特性
熊倉一英; 山下雄大; 平間一行; 谷保芳孝; 佐藤威友
電子情報通信学会研究会（ED, CPM, LQE）, 21 Nov. 2025, Japanese, Oral presentation
20 Nov. 2025 - 21 Nov. 2025

GaNAsシェル膜厚によるGaAs/GaNAsコアーシェルナノワイヤ光学特性制御
塩見悠介; 佐野真浩; 峰久恵輔; 山下雄大; 谷保芳孝; 平間一行; 熊倉一英; 石川史太郎
第61回応用物理学会北海道支部, 01 Nov. 2025, Japanese, Oral presentation
01 Nov. 2025 - 02 Nov. 2025

電気化学測定法によるud-AlGaN/n-GaN構造の電気的評価
高橋円空; 嶋﨑喬大; 赤澤怜明; 熊倉一英; 谷保芳孝; 佐藤威友
第86回応用物理学会秋季学術講演会, 10 Sep. 2025, Japanese, Poster presentation
07 Sep. 2025 - 10 Sep. 2025

c-BScNエピタキシャル薄膜のスパッタリング成長機構
前田亮太; 谷保芳孝; 熊倉一英; 二宮翔; 西堀麻衣子; 平間一行
第86回応用物理学会秋季学術講演会, 09 Sep. 2025, Japanese, Oral presentation
07 Sep. 2025 - 10 Sep. 2025

InGaN光電極とNiO助触媒界面のバンドアライメント
山下雄大; 熊倉一英; 平間一行; 谷保芳孝
第86回応用物理学会秋季学術講演会, 09 Sep. 2025, Japanese, Oral presentation
07 Sep. 2025 - 10 Sep. 2025

I-V, C-V測定から求めたAlNショットキーバリアダイオードの障壁高さの温度依存性
佐々木一晴; 廣木正伸; 熊倉一英; 平間一行; 谷保芳孝; 前田拓也
第86回応用物理学会秋季学術講演会, 08 Sep. 2025, Japanese, Oral presentation
07 Sep. 2025 - 10 Sep. 2025

GaAs/GaNAsコア－シェルナノワイヤ光吸収特性のGaNAsシェル膜厚依存性
塩見悠介; 佐野真浩; 峰久恵輔; 山下雄大; 谷保芳孝; 平間一行; 熊倉一英; 石川史太郎
第17回ナノ構造エピタキシャル成長講演会, 18 Jul. 2025, Japanese, Poster presentation
17 Jul. 2025 - 19 Jul. 2025

AlN基板上AlNショットキーバリアダイオードの障壁高さの温度依存性
佐々木一晴; 廣木正伸; 熊倉一英; 平間一行; 谷保芳孝; 前田拓也
第17回ナノ構造エピタキシャル成長講演会, 17 Jul. 2025, Japanese, Poster presentation
17 Jul. 2025 - 19 Jul. 2025

AlN系分極ドープFETの高周波特性
川崎晟也; 廣木正伸; 平間一行; 熊倉一英; 谷保芳孝
第72回応用物理学会春季学術講演会, 17 Mar. 2025, Japanese, Oral presentation
14 Mar. 2025 - 17 Mar. 2025

組成傾斜 AlGaN コンタクト層を有する AlN SBD における電流輸送機構の解明
前田拓也; 若本裕介; 佐々木一晴; 棟方晟啓; 廣木正伸; 平間一行; 熊倉一英; 谷保芳孝
第72回応用物理学会春季学術講演会, 17 Mar. 2025, Japanese, Oral presentation
14 Mar. 2025 - 17 Mar. 2025

順バイアス印加AlNショットキーバリアダイオードのエミッション顕微鏡観察
佐々木一晴; 廣木正伸; 熊倉一英; 平間一行; 谷保芳孝; 田中敦之; 本田善央; 中野義昭; 前田拓也
第72回応用物理学会春季学術講演会, 17 Mar. 2025, Japanese, Oral presentation
14 Mar. 2025 - 17 Mar. 2025

立方晶窒化ホウ素スカンジウム(c-BScN)薄膜のマグネトロンスパッタリング成長
前田亮太; 谷保芳孝; 熊倉一英; 平間一行
第72回応用物理学会春季学術講演会, 17 Mar. 2025, Japanese, Oral presentation
14 Mar. 2025 - 17 Mar. 2025

III族極性InNのMOVPE成長における結晶成長相図
山下雄大; 熊倉一英; 平間一行; 谷保芳孝
第72回応用物理学会春季学術講演会, 16 Mar. 2025, Japanese, Oral presentation
14 Mar. 2025 - 17 Mar. 2025

■ Affiliated academic society

Nov. 2018 - Present
The Electrochemical Society of Japan

Aug. 1993 - Present
The Japan Society of Applied Physics

Present
Materials Research Society

■ Research Themes

Novel molecular layer epitaxy on a step-free III-nitride surface
Grants-in-Aid for Scientific Research
01 Apr. 2016 - 31 Mar. 2019
Akasaka Tetsuya
We have proposed a novel molecular layer epitaxy for fabricating group-III-nitride-based hetero-structures having atomically smooth hetero-interfaces. We have also optimized growth conditions of InN thin films in metalorganic vapor phase epitaxy and succeeded in fabricating N-face GaN/InN/GaN double hetero-structures. We have fabricated GaN/AlN hetero-structures and observed the Landau level quantization by gate tuning, which is a clear evidence showing the high-quality hetero-interface in the GaN/AlN hetero-structure.
Japan Society for the Promotion of Science, Grant-in-Aid for Scientific Research (B), NTT Basic Research Laboratories, 16H03862

Mechanical transfer of GaN-based devices using layered BN
Grants-in-Aid for Scientific Research
01 Apr. 2014 - 31 Mar. 2018
Kobayashi Yasuyuki; KUMAKURA KAZUHIDE; HIROKI MASANOBU
We grew single-crystal GaN films on 100-nm-thick AlN buffer layers that were grown on 3-nm-thick hexagonal boron nitride (h-BN) buffer layers on (0001) sapphire substrates with plasma-assisted molecular beam epitaxy (MBE). X-ray diffraction for the GaN film revealed that the AlN layer on the h-BN layer enabled the crystalline quality of GaN film on it to be greatly improved. Streaky reflection high energy electron diffraction pattern for the GaN film indicated that the single crystal (0001) GaN thin film with a flat surface was grown on the AlN/h-BN buffer layer. MBE has a promising as the growth technology for high-quality GaN thin films grown on the h-BN buffer layers.
Japan Society for the Promotion of Science, Grant-in-Aid for Scientific Research (A), Hirosaki University, 26246015